Optical Properties of 3D Printable Plastics in the THz Regime and their Application for 3D Printed THz Optics

We characterize the terahertz (THz) properties of several materials which can be used for fused material deposition 3D printing. We identify Polystyrene as a material which shows a promising compromise between printability and THz transparency. Furthermore, printed THz lenses are presented and characterized.     

Sample Thickness Measurement with THz-TDS: Resolution and Implications

The accuracy of any measurement with terahertz time-domain spectroscopy (THz-TDS) depends strongly on knowing and supplying the precise sample thickness when processing the raw terahertz data. Sample thickness usually is estimated using other (non-THz) metrology and invariably involves some degree of uncertainty. It turns out that the terahertz data itself typically also contains information regarding sample thickness. However, there is limited systematic work addressing the following questions: What is the best method for extracting sample thickness from THz-TDS data? And, what is the thickness resolution obtainable with THz-TDS? In this study we demonstrate how these questions can be answered in general by answering them for a specific example: undoped silicon wafers. We determine the accuracy with which the exact thickness of nominally 500 μm silicon wafers can be measured using transmission mode THz-TDS. We analyze and compare the resolution of 5 different approaches for determining sample thickness using THz-TDS data, including two new methods and three methods proposed in the literature. The quantitative results and analyses of methods we present will be useful in developing far-infrared optical metrology. Conversely the quantitative results presented can be used to relate uncertainty in sample thickness to uncertainty in the measured terahertz data both in the time domain and frequency domain (phase and amplitude). Finally, a precise understanding of the relationship between sample thickness and THz-TDS data can be used to formulate superior THz-TDS data work-up methodologies.     

Terahertz polarization beam splitter based on photonic crystal and multimode interference

We design a compact terahertz （THz） polarization beam splitter. Both plane wave expansion method and fi- nite-difference time-domain method are used to calculate and analyze the characteristics of the proposed device. The designed polarization beam splitter can split TE-polarized and TM-polarized THz waves into different propagation di- rections. The simulation results show that the extinction ratios are larger than 18.36 dB for TE polarization and 13.35 dB for TM polarization in the frequency range from 1.86 THz to 1.91 THz, respectively. The designed polarization beam splitter has the advantages of small size and compact structure with a total size of 4.825 mm×0.400 mm.     

Characterization of in-situ terahertz detection by optical interaction in a periodically poled stoichiometric lithium tantalate nonlinear crystal

Terahertz waves are generated using a femtosecond laser pulse in a periodically poled stoichiometric lithium tantalate crystal and simultaneously detected via a non-collinear optical parametric interaction inside the same crystal. Real time up-conversion signal between the generated THz and an optic probe pulses is measured depending on the beam overlapped conditions using a general silicon-photodiode for the THz detection. The non-collinear geometry is to facilitate manipulated property of the position-dependent bandwidth at narrow and broad bandwidths of 45 GHz and 3.3 THz, respectively at the one crystal. Furthermore, an aperture effect at the detection part is characterized as the function of size and position owing to the spatial distribution of the frequency conversion signal and it is applied in optimization of the in-situ detection scheme.     

Simulation of Terahertz Generation from Lateral Diffusion Currents in Semiconductor Devices

In this paper we model the carrier dynamics and resulting THz emission from lateral diffusion currents within a semiconductor device which has been partially masked by a metallic mask. We present a numerical 1D model and a 1D Monte Carlo simulation which both demonstrate that regardless of the excitation laser spot shape we do not expect to see measurable THz emission in the direction of the optical pump propagation from lateral diffusion currents. Experimentally such devices do produce strong THz emission. We analytically investigate the role of the metal mask and we found that it suppresses the emission of dipoles that are in a region that is less than a wavelength away from the interface. The results from the numerical model are also included in a finite element analysis model of the geometry which predicts THz emission if and only if the metal mask is present.     

Mixing properties of mim diodes in the infrared

Point contact MIM diodes of different materials have been tested as harmonic mixers at 29 THz and 88 THz. From the analysis of the I-V static characteristic quantitative informations have been obtained about the effectiveness of the diodes as high order mixers.     

Sixtieth order harmonic mixing to 4.25 THz using a Schottky diode

Harmonic mixing of mm-waves with radiation of 3.7 THz with different Schottky diodes is reported. The highest mixing order is 60 producing a beat between 72 GHz and 4.25 THz radiation. Such high frequency mixing has so far only been possible using cryogenic Josephson mixers. The present result permits substantial simplification of measurements of optical frequencies.     

Terahertz Spectra of L-Ascorbic Acid and Thiamine Hydrochloride Studied by Terahertz Spectroscopy and Density Functional Theory

We have investigated the terahertz spectra of L-ascorbic acid and thiamine hydrochloride measured by terahertz time-domain spectroscopy (THz-TDS) and Fourier transform infrared spectroscopy (FTIR). The measured absorption spectra were demonstrated to be in good agreement with the results simulated by Density Functional Theory (DFT) using hybrid functional B3LYP with basis set of 6-31G (d), except with slight frequency shift and few peaks missing. We presented the comparison of measured spectra by the FTIR spectroscopy employing low temperature silicon bolometer as detector and the TDS system. The measured spectra of the L-ascorbic acid showed shoulder bands at 0.25, 1.1, 1.5, 1.82, 2.03, 2.30, 2.44, 2.67, 2.97, 3.12, and 3.40 THz, respectively. The spectra of the thiamine hydrochloride show shoulder bands at 0.48, 1.11, 1.57, 1.75, 1.92, 2.08, 2.31, 2.53, 2.69, 2.85, 3.12, 3.22, and 3.31 THz. Most absorption peaks of the two samples agree with the results simulated by Density Function Theory (DFT) method of Gaussian 09 software. In our work, more spectral peaks based on experimental and theoretical results were found in comparison to that of other groups, since we employed higher sensitive FTIR measurement system and considered the effect of number of molecule unit in simulation. The study suggests that the effect of intermolecular vibration is stronger than intramolecular interaction on the absorption bands in THz region.     

Terahertz gyrotrons: State of the art and prospects

The state of the art for terahertz gyrotrons that are needed for various scientific research and practical applications is presented. Powers of 5 kW and 200 kW are obtained at frequencies of 1 and 0.7 THz using pulsed gyrotrons with pulse durations of tens of microseconds. A power of 100 W is demonstrated for cw gyrotrons at frequencies ranging from 0.2 to 0.5 THz.     

Fabrication and analysis of GaAs Schottky barrier diodes fabricated on thin membranes for terahertz applications

The GaAs Schottky diode is predominantly used as the critical mixer element in heterodyne receivers in the frequency range from 300 GHz to several THz[1]. At operating frequencies above one THz the skin effect adds significant parasitic resistance to the diode which degrades the receiver sensitivity. A novel diode structure called the Schottky barrier membrane diode is proposed to decrease the skin effect resistance by reducing the current path between the Schottky and ohmic contacts. This is accomplished by fabricating the diode on a very thin membrane of GaAs (about 1 μm thickness). A theoretical analysis has shown that this will reduce the substrate resistance by 60% at 3 THz. This reduction in resistance corresponds to a better frequency response which will improve the device's performance as a mixer element.     

GaAs Schottky barrier mixer diodes for the frequency range 1–10 THz

Recent technological advances have made possible the development of heterodyne receivers with high sensitivity and high spectral resolution for frequencies up to 3,000 GHz (3 THz). These receivers rely on GaAs Schottky barrier mixer diodes to translate the high-frequency signal to a lower frequency where amplification and signal processing are possible. In the frequency range from 1–10 THz several new effects will limit diode performance. These effects are discussed and guidelines for diode design are presented.     

A model for the complex permittivity of water at frequencies below 1 THz

Experimental permittivity data of liquid water, compiled from the open literature, were selectively applied to support a modeling strategy. Frequencies up to 1 THz and atmospheric temperatures are covered with an expression made up by two relaxation (Debye) terms. The double-Debye model reduces to one term when the high frequency limit is set at 100 GHz, and the model can be extended to 30 THz by adding two resonance (Lorentzian) terms. The scheme was carried out by employing nonlinear least-squares fitting routines to data we considered reliable.     

Design and fabrication of 0.5 micron GaAs Schottky barrier diodes for low-noise terahertz receiver applications

Recent technological advances have made possible the development of heterodyne receivers with high sensitivity and high spectral resolution for frequencies in the range 1,000–3,000 GHz (1–3 THz). These receivers rely on GaAs Schottky barrier mixer diodes to translate the high-frequency signal to a lower frequency where amplification and signal processing are possible. At these frequencies, the diode quality is a major limitation to the performance of the receiver. The design, fabrication and DC evaluation of a diode for this frequency range is presented. A figure-of-merit cut-off frequency of over 10 THz is achieved with a record low zero biased capacitance of 0.5 fF. Results from RF tests are also given.     

Measurement of Laser Frequencies from CD3OH and CD3OD up to 8.6 THz

Twenty two laser frequencies, whose values range from 1.6 to 8.6 THz, have been measured for the first time using heterodyne techniques. These laser emissions were generated by an optically pumped molecular laser that used either CD₃OH or CD₃OD as its lasing medium. At least three of the observed laser emissions generated by CD₃OH were discovered during this investigation and the first laser frequencies measured for CD₃OH above 8 THz are reported. The laser frequencies were measured with fractional uncertainties up to ± 2 × 10^?7, of sufficient accuracy to confirm two proposed far-infrared laser assignments. The offset frequency of the CO₂ pump laser with respect to its center frequency was also measured for nearly all laser emissions generated by CD₃OH.     

Wavelet Based Identification of Substances in Terahertz Tomography Measurements

In comparison to the X-ray computed tomography Terahertz technique significantly enhances the amount of the information acquired during the sample measurement. Not only amplitude, but also phase, time and spectral characteristics can be determined in THz time-domain spectroscopy. Thus, Terahertz tomography allows localization and identification of substances within the objects due to the characteristic fingerprints in this frequency range. Certainly, an appropriate data processing and comparison algorithms are crucial for the accurate identification of the substances in the measured sample. Therefore, we present a new wavelet-based identification method which is suitable even for the substances with broad absorption curves and small or no absorption peaks. The performance of this algorithm was evaluated with the help of a tomographic sample filled with four substances, which were previously characterized for the external database. The continuous wavelet transform was applied to every data cell of the tomographic measurement and compared to the database. Received sinograms were reconstructed into images which depict estimated similarity between the measured and database substances. Furthermore, we suggest a method for the reduction of spectral data after the continuous wavelet transform. This method is based on the extraction of the distinctive features in the form of ridge lines.     

Investigation of GaAs Schottky barrier diodes in the THz range

The properties of GaAs Schottky barrier diodes as video detectors and mixing elements were investigated in the frequency range from 0.8–2.5 THz. For the most sensitive diode, the video responsivity and system noise temperature were measured as a function of incident laser power. The highest video responsivity was 2,000 V/W at 214μm and 60 V/W at 118μm. For five diodes differing in doping, capacitance, series resistance and anode diameter, the system noise temperature was measured at 214μm and 118μm. The best single sideband (SSB) values are 12,300 K and 24,200 K at 214μm and 118μm, respectively. The system noise temperature versus frequency is given over the range from 0.5–3 THz for two specific diodes demonstrating that the sharpness of the I–V characteristics is only of secondary importance for mixer perfomance at such high frequencies.     

Quasi-optical mixer for efficient sum and difference frequency sidebands generation at 1 THz mark

Construction details of recently developed mixer for generation of narrow band and continuously tunable submillimeter radiation are reviewed briefly. The measurements indicate the usability of such mixer design for the high resolution spectroscopical work at frequencies close to and above the 1 THz mark.     

A practical RFID authentication mechanism for digital television

As information technology continuously progresses, more applied technologies are developed, such as radio frequency identification (RFID). In this paper, we propose a novel digital television (DTV) structure that uses RFID for encryption. RFID is widely used for various applications because of its advantages such as an extended lifetime and security, and it is less affected by environmental constraints. The proposed protocol uses RFID for encryption to withstand many attacks that the traditional system is vulnerable to, such as impersonation attack, replay attack and smart card cloning. Compared with other protocols, the proposed protocol is more secure and efficient. Thus, our proposed protocol makes the DTV framework more complete and secure.     

Parameters influencing far infrared videodetection with submicron-size Schottky diodes

The voltage responsivity of videodetectors using submicron GaAs Schottky diodes has been investigated in the 0.7–3.7 THz range. Incident submillimeter power level, DC bias and video-load influences are discussed within the framework of existing theories. Various diodes types differing in semiconductor parameter values as well as junction geometries are compared. The submillimeter frequency response is studied and interpreted in terms of plasma resonance effects in the epilayer.     

Otpically illuminated dielectric interfaces as high-speed far-infrared modulators

A new device for the gigahertz modulation of far-infrared radiation is analytically and numerically analyzed. It consists of a thin layer of a high-mobility, direct-bandgap semiconductor, such as GaAs, in which a high-density electron-hole plasma is rapidly created and destroyed, thereby rapidly changing the free-carrier reflectivity of the active layer. Illumination by a high-power, near-infrared laser diode array generates the plasma through intrinsic photoconduction. It is shown that this device acis primarily as an amplitude modulator, and that its efficiency increases sharply with increasing far-IR frequency, in contrast to a Schottky diode, which acts primarily as a phase modulator, and whose efficiency falls off sharply with far-IR frequency. The breakeven frequency lies at about 1.5 THz, depending slightly on the assumed device parameters. The relative advantage of the new device increases rapidly with increasing far-infrared frequency. At an operating frequency of 2.5 THz (119 μm), for example, a 1 GHz modulation bandwidth may be achieved with a single-sideband conversion loss of only-21 db, versus a Schottky's loss of-39 db, assuming a laser diode power of 1 W, which is readily available from recently developed laser diode arrays.