Characterization of superconducting thin films by Mo75Re25 target for rf cavity applications

superconducting thin films by Mo₇₅Re₂₅ single-target magnetron sputtering at various temperatures on sapphire substrates were prepared. Sharp superconductive transitions andT _c values above 10 K were achieved, and the deposited films showed a good metallic behavior. According to structural analyses (EDS and X-rays), all the samples have the same stoichiometry as the target and, even at low deposition temperatures, they exhibit theA15 phase. From measured residual resistivities and superconducting critical temperatures the theoretical BCS surface resistances were estimated and compared to those o Mo₆₀Re₄₀ films, presented in a previous work. Both these alloys, in fact, being characterized by low surface resistances and high critical fields, are good candidates as coating films in r.f. cavities.     

Niboium-titanium nitride thin films for superconducting rf accelerator cavities

The development of sputtering-magnetron techniques makes possible the manufacturing of thin-film coated rf cavities for high-energy accelerators of various superconducting alloys or compounds. In this context high-quality (Nb_1–xTi_x)N films have been produced by dc magnetron sputtering and carefully characterized. These films, for x0.5, exhibit a critical temperature T_c as high as NbN (T_c=17 K) but show a markedly lower normal state resistivity. The calculated BCS surface impedance of the films is also lower than for NbN. The overall properties of the (Nb_1–xTi_x)N films are compared with those of other superconductors, and the suitability of this material for the production of superconducting sputter-coated copper cavities for particle physics accelerators is demonstrated. The potential interest of (Nb_1–xTi_x)N films for superconducting electronics is also briefly outlined.     

Characterization of organic polymer thin films deposited by rf magnetron sputtering

Organic polymer thin films deposited by sputtering using polytetrafluoroethylene (PTFE) and polyimide (PI) targets were investigated with Fourier Transform Infrared Spectroscopy (FTIR), X-ray Photoelectron Spectroscopy (XPS), and Scanning Electron Microscopy (SEM). Films deposited from the PTFE target were poly-hydro-fluoro-carbon. The thin films showed water repellency with an H₂O contact angle of about 110° and were transparent in the visible region. C-F combination states in the films were similar to those of bulk PTFE. Films deposited from the PI target were found to contain C-N bonds and were harder than bulk PI. The color of thin films was dark brown, showing the existence of C-N bonds, such as those in imide and/or amide groups. However, the combination states characterized by FTIR and XPS analyses were considerably different from those of bulk PI. The difference in chemical composition and combination states between the films deposited from PTFE and PI is thought to result from the difference in types of particles sputtered from the targets; in the case of PTFE sputtering, less C-F bonds are broken by collision of Ar ions for sputtering, whereas in the case of PI sputtering, C-H and C-C bonds are broken by collision of Ar ions.     

Limitations of rf field by thermal breakdown in superconducting niobium cavity

The thermal breakdown is unacceptable for high power use of superconducting rf cavities. Limitations of rf field both in Hel and Hell baths were estimated and discussed on C-band TE011 mode niobium cavities. Calculations were performed by a simulation program under the different assumptions of Kapitza resistance, thermal conductivity and wall thickness, taking lateral heat flow and curvature of the wall into account.     

Characterization of Zinc-phthalocyanine-CdS composite thin films for photovoltaic applications

The optical properties of ZnPc-CdS composite thin films have been measured. The composite layers were prepared by vacuum evaporation. The electrical conduction mechanism prevailing in these junctions was of Poole-Frenkel type and the activation energy was found to have a linear dependence with applied field. The maximum photoconductivity occurred at an energy gap around 1.5 to 1.7 eV. The photosensitivity is found to increase with increase in applied voltage.     

In-situ deposition of superconducting YBCO thin films by magnetron sputtering from powder target

We have used stoichiometric Y₁Ba₂Cu₃O_7–x powder as magnetron sputtering target to deposit high-quality high-T _c superconducting thin films on MgO, SrTiO₃, and ZrO₂ substrates. The zero-resistance temperatures are 86–88 K, and the 77 K zero-field critical current density is 8 × 10⁵ A/cm². The films are highlyc-axis oriented. Films deposited on 10 × 10 × 1 mm³ ZrO₂ substrates have surface resistances below 25 m at 77 K and 94 GHz. Using powder targets instead of bulk targets has the following advantages: simple and low-cost target preparation, simple target replacement, and versatility for large-area deposition.     

Sputter deposited LiPON thin films from powder target as electrolyte for thin film battery applications

Lithium phosphorus oxynitride (LiPON) thin films as solid electrolytes were prepared by reactive radio frequency (rf) magnetron sputtering from Li₃PO₄ powder compact target. High deposition rates and ease of manufacturing powder target compared with conventional ceramic Li₃PO₄ targets offer flexibility in handling and reduce the cost associated. Rf power density varied from 1.7 Wcm^− 2 to 3 Wcm^− 2 and N₂ flow from 10 to 30 sccm for a fixed substrate to target distance of 4 cm for best ionic conductivity. The surface chemical analysis done by X-ray photoelectron spectroscopy showed incorporation of nitrogen into the film as both triply, N_t and doubly, N_d coordinated form. With increased presence of N_t, ionic conductivity of LiPON was found to be increasing. The electrochemical impedance spectroscopy of LiPON films confirmed an ionic conductivity of 1.1 × 10^− 6 Scm^− 1 for optimum rf power and N₂ flow conditions.     

Zinc oxide thin films: Characterization and potential applications

Zinc oxide (ZnO) has attracted recent interest for a range of applications, including use as a transparent conductive oxide (TCO) and in gas sensor devices. This paper compares ZnO films grown using two methods designed for the production of thin films, namely sol-gel and aerosol assisted chemical vapour deposition (AACVD) for potential use in sensor and TCO applications. Materials produced by the sol-gel route were observed to be amorphous when annealed at 350 °C, but were crystalline when annealed at higher temperatures and had a relatively open grain structure when compared to the AACVD films. Electrical characterization showed that materials were highly resistive, but that their properties varied considerably when the measurements were performed in vacuum or in air. This behaviour was rapidly reversible and reproducible for room temperature measurement.In contrast materials grown by aerosol-assisted CVD were non-porous, polycrystalline and conductive. Measured electrical properties did not vary with changing measurement atmosphere. These differences are discussed in terms of the structural characterisation of the films and some comments are made regarding the suitability of both approaches for the growth of ZnO thin film sensor materials.     

Characterization of strength properties of thin polycrystalline silicon films for MEMS applications

The aim of this work is to characterize the strength properties of polycrystalline silicon (polysilicon) with the use of tensile and bending test specimens. The strength of thin polysilicon films with different geometry, size and stress concentrations has been measured and correlated with the effective size of the specimen and its stress distribution. The test results are evaluated using a probabilistic strength approach based on the weakest link theory with the use of STAU software. The use of statistic methods of strength prediction of polysilicon test structures with a complex geometry and loading based on test values for standard material tests specimen has been evaluated.     

Properties of Nb-doped ZnO transparent conductive thin films deposited by rf magnetron sputtering using a high quality ceramic target

Nb-doped ZnO films with (002) orientation have been grown on glass substrates by rf magnetron sputtering followed by vacuum annealing at 400°C for 3 h. The microstructures and surface figures of the Nbdoped ZnO films were investigated with X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. And its optical and electrical properties were measured at room temperature using a four-point probe technique and 756-type spectrophotometer, respectively. X-ray diffraction (XRD) revealed that the films are highly textured along the c axis and perpendicular to the surface of the substrate. After annealing at 400°C for 180 min under vacuum, transmittance of about 90% in visible region for Nb doped ZnO films was confirmed by the optical transmission spectra, and the low resistivity of 5·47 × 10⁻³ Ω·cm was obtained.     

Compositional optimization of magnetite thin films prepared by rf sputtering from a composite target of wüstite and Ge

This study investigated the compositional optimization of magnetite (Fe₃O₄) thin films containing a small amount of Ge to enhance magnetization. No substrate bias was applied during deposition. In a pure Ar atmosphere, the film structure changed from the phase mixture of magnetite and wüstite (Fe_1 − xO) to the weak appearance of wüstite with increasing Ge content. The antiferromagnetic wüstite thus obtained was employed as a starting material to prepare single-phase magnetite, and a gas mixture of Ar and O₂ was then applied. Single-phase magnetite thin films exhibit ferrimagnetic behavior with maximum magnetization of 0.42 T at 1196 kA m⁻¹(15 kOe), which exceeds that of a composite target of ceramic magnetite with Ge chips. Simultaneously adding Ge to the iron-excess wüstite target therefore effectively enhanced magnetization.     

先驱硼薄膜的质量对MgB2超导薄膜的影响

以高纯乙硼烷(B2H6)为B源,采用化学气相沉积(CVD)方法在多晶Al2O3衬底上沉积B薄膜,然后在Mg蒸气中异位退火来制备MgB2超导薄膜.通过X射线衍射和MgB2超导薄膜的电阻-温度曲线,研究了先驱硼薄膜的质量对MgB2超导薄膜的影响.     

Surface impedance of NbN superconducting thin films by Josephson measurements

The microwave quality factorQ of NbN-Pb Josephson junctions has been determined via measurements of the amplitude of Fiske resonant modes in the junctions at different resonant frequencies in the range 30–300 GHz. It is proved that, for our samples, the main contribution to theQ comes from the surface impedance of the filmsR _s . Data show that, for NbN,R _s v^1.5±0.1 atT _c =4.2 K in the frequency range considered. The implications of our results for the possible applications of NbN films both in the context of Josephson microwave devices and as a coating material for rf cavities in high-energy physics are discussed.     

Optical and structural characteristics of ZnO thin films grown by rf magnetron sputtering

Nanostructured ZnO thin films on Pyrex glass substrates were deposited by rf magnetron sputtering at different substrate temperatures. Structural features and surface morphology were studied by X-ray diffraction and atomic force microscopy analyses. Films were found to be transparent in the visible range above 400 nm, having transparency above 90%. Sharp ultraviolet absorption edges around 370 nm were used to extract the optical band gap for samples of different particle sizes. Optical band gap energy for the films varied from 3.24 to 3.32 eV and the electronic transition was of the direct in nature. A correlation of the band gap of nanocrystalline ZnO films with particle size and strain was discussed. Photoluminescence emission in UV range, which is due to near band edge emission is more intense in comparison with the green band emission (due to defect state) was observed in all samples, indicating a good optical quality of the deposited films.     

Tin sulfide thin films and Mo/p-SnS/n-CdS/ZnO heterojunctions for photovoltaic applications

Tin sulfide (SnS) is one of the most promising materials for photovoltaics. Here we report on the preparation as well as chemical, structural and physical characterization of the Mo/p-SnS/n-CdS/ZnO heterojunctions. The SnS thin films were grown by hot wall deposition method on the Mo-coated glass substrates at 270-350 °C. The crystal structure and elemental composition were examined by X-ray diffraction and Auger electron spectroscopy methods. The CdS buffer layers were deposited onto the SnS films by chemical bath deposition. The ZnO window layers were deposited by a two step radio frequency magnetron sputtering, resulting in a ZnO bilayer structure: the first layer consists of undoped i-ZnO and the second of Al-doped n-ZnO. The best junctions have an open circuit voltage of 132 mV, a short circuit current density of 3.6 mA/cm², a fill-factor of 0.29 and efficiency up to 0.5%.     

ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor

Recently, the application of ZnO thin films as an active channel layer of transparent thin film transistor (TFT) has become of great interest. In this study, we deposited ZnO thin films by atomic layer deposition (ALD) from diethyl Zn (DEZ) as a metal precursor and water as a reactant at growth temperatures between 100 and 250 °C. At typical growth conditions, pure ZnO thin films were obtained without any detectable carbon contamination. For comparison of key film properties including microstructure and chemical and electrical properties, ZnO films were also prepared by rf sputtering at room temperature. The microstructure analyses by X-ray diffraction have shown that both of the ALD and sputtered ZnO thin films have (002) preferred orientation. At low growth temperature T_s ≤ 125 °C, ALD ZnO films have high resistivity (> 10 Ω cm) with small mobility (< 3 cm²/V s), while the ones prepared at higher temperature have lower resistivity (< 0.02 Ω cm) with higher mobility (> 15 cm²/V s). Meanwhile, sputtered ZnO films have much higher resistivity than ALD ZnO at most of the growth conditions studied. Based upon the experimental results, the electrical properties of ZnO thin films depending on the growth conditions for application as an active channel layer of TFT were discussed focusing on the comparisons between ALD and sputtering.     

Reaction of Al/Mo thin films

Intermixing and compound formation by means of annealing have been studied for Al/Mo thin films. With annealing at 300° C, only intermixing between aluminium and molybdenum films occurs due to mutual diffusion. With annealing at over 350° C, Al₁₂Mo and AlMo₃ compounds were formed. The electrical resistivity of the film increases with intermixing and compound formation. The electrical resistivity increase is proportional to the annealing time,t ^1/2. In low vacuum annealing, molybdenum oxide film forms on aluminium film. It is assumed that molybdenum atoms diffuse through the aluminium film due to their chemical affinity with oxygen in the atmosphere.     

Effect of rf power on the properties of rf magnetron sputtered ZnO:Al thin films

Aluminum doped zinc oxide ZnO:Al thin films were prepared using rf magnetron sputtering. The preparation was performed at room temperature and low pressure with varying rf power between P = 50 W and P = 500 W. Structural, electrical and optical film properties were studied depending on rf power. Special attention was paid to correlations among film structure, sheet resistance and optical transmission. Films with largest crystallite size exhibited highest optical transmission, but not lowest electrical resistivity. An explanation for this finding was sought in terms of the amount of Al atoms incorporated in the films and the places they occupy, parameters which are in turn related to rf power.