Angular distribution of plasma in the vacuum arc ion source

This paper presents measurements of the angular distribution of the plasma components and different charge states of metal ions generated by a MEVVA-type ion source and measured by a time-of-flight mass-spectrometer. The experiments were performed for different cathode materials (Al, Cu, and Ti) and for different parameters of the vacuum arc discharge. The results are compared with prior results reported by other authors. The influence of different discharge parameters on the angular distribution in a vacuum arc source is discussed.     

Emergency power source for an ion vacuum pump

This note describes a simple high-voltage dc generator which serves as an emergency power source for an ion vacuum pump during power interruptions, or failure of the main supply.     

Influence of discharge gap on the discharge stability in a short vacuum arc ion source

The influence of the discharge gap between cathode and anode on the discharge stability in a short vacuum arc (SVA) ion source is presented in this paper. Planar cathode and cylindrical hollow anode made of titanium are investigated. There is a great need in present accelerator injection research for SVA source to produce the small deviation of the ion current beam. Current research shows that increasing the short discharge gap can reduce the level of ion current deviation and ion charge deviation from 29% and 31% to 15% and 17%, respectively. A microplasma plume generation mechanism in SVA and scanning electron microscopic results can be used to explain this interesting phenomenon.     

Characteristic of a triple-cathode vacuum arc plasma source

In order to generate a better ion beam, a triple-cathode vacuum arc plasma source has been developed. Three plasma generators in the vacuum arc plasma source are equally located on a circle. Each generator initiated by means of a high-voltage breakdown between the cathode and the anode could be operated separately or simultaneously. The arc plasma expands from the cathode spot region in vacuum. In order to study the behaviors of expanding plasma plume generated in the vacuum arc plasma source, a Langmuir probe array is employed to measure the saturated ion current of the vacuum arc plasma source. The time-dependence profiles of the saturated current density of the triple vacuum arc plasma source operated separately and simultaneously are given. Furthermore, the plasma characteristic of this vacuum arc plasma source is also presented in the paper.     

Shunting arc plasma source for pure carbon ion beam

A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA∕mm(2) at the peak of the pulse.     

Liquid metal alloy ion source based metal ion injection into a room-temperature electron beam ion source

We have carried out a series of measurements demonstrating the feasibility of using the Dresden electron beam ion source (EBIS)-A, a table-top sized, permanent magnet technology based electron beam ion source, as a charge breeder. Low charged gold ions from an AuGe liquid metal alloy ion source were injected into the EBIS and re-extracted as highly charged ions, thereby producing charge states as high as Au(60 +). The setup, the charge breeding technique, breeding efficiencies as well as acceptance and emittance studies are presented.     

GaBi alloy liquid metal ion source for microelectronics research

A GaBi alloy liquid metal ion source has been studied. From an analysis of the source mass spectra as a function of emission current, a mechanism is suggested for the production of single- and double-charged ions. There is good agreement with the results of Swanson's investigations of a pure Bi source.     

Generation of high charge state metal ion beams by electron cyclotron resonance heating of vacuum arc plasma in cusp trap

A method for generating high charge state heavy metal ion beams based on high power microwave heating of vacuum arc plasma confined in a magnetic trap under electron cyclotron resonance conditions has been developed. A feature of the work described here is the use of a cusp magnetic field with inherent "minimum-B" structure as the confinement geometry, as opposed to a simple mirror device as we have reported on previously. The cusp configuration has been successfully used for microwave heating of gas discharge plasma and extraction from the plasma of highly charged, high current, gaseous ion beams. Now we use the trap for heavy metal ion beam generation. Two different approaches were used for injecting the vacuum arc metal plasma into the trap--axial injection from a miniature arc source located on-axis near the microwave window, and radial injection from sources mounted radially at the midplane of the trap. Here, we describe preliminary results of heating vacuum arc plasma in a cusp magnetic trap by pulsed (400 μs) high power (up to 100 kW) microwave radiation at 37.5 GHz for the generation of highly charged heavy metal ion beams.     

High-energy metal ion implantation for reduction of surface resistivity of alumina ceramic

In this work, the possibility to increase the surface conductivity of ceramic insulators through their treatment with accelerated metal ion beams produced by a MevvaV.Ru vacuum arc source is demonstrated. The increase in surface conductivity is made possible due to experimental conditions in which an insulated collector is charged by beam ions to a potential many times lower than the accelerating voltage, and hence, than the average beam ion energy. The observed effect of charge neutralization of the accelerated ion beam is presumably associated with electrons knocked out of the electrodes of the accelerating system of the source and of the walls of the vacuum chamber by the accelerated ions.     

High current liquid metal ion source using porous tungsten multiemitters

We recently developed an indium Liquid-Metal-Ion-Source that can emit currents from sub-μA up to several mA. It is based on a porous tungsten crown structure with 28 individual emitters, which is manufactured using Micro-Powder Injection Molding (μPIM) and electrochemical etching. The emitter combines the advantages of internal capillary feeding with excellent emission properties due to micron-size tips. Significant progress was made on the homogeneity of the emission over its current-voltage characteristic as well as on investigating its long-term stability. This LMIS seems very suitable for space propulsion as well as for micro/nano manufacturing applications with greatly increased milling/drilling speeds. This paper summarizes the latest developments on our porous multiemitters with respect to manufacturing, emission properties and long-term testing.     

A high voltage pulse power supply for metal plasma immersion ion implantation and deposition

We describe the design and implementation of a high voltage pulse power supply (pulser) that supports the operation of a repetitively pulsed filtered vacuum arc plasma deposition facility in plasma immersion ion implantation and deposition (Mepiiid) mode. Negative pulses (micropulses) of up to 20 kV in magnitude and 20 A peak current are provided in gated pulse packets (macropulses) over a broad range of possible pulse width and duty cycle. Application of the system consisting of filtered vacuum arc and high voltage pulser is demonstrated by forming diamond-like carbon (DLC) thin films with and without substrate bias provided by the pulser. Significantly enhanced film∕substrate adhesion is observed when the pulser is used to induce interface mixing between the DLC film and the underlying Si substrate.     

Laser ion source with solenoid for Brookhaven National Laboratory-electron beam ion source

The electron beam ion source (EBIS) preinjector at Brookhaven National Laboratory (BNL) is a new heavy ion-preinjector for relativistic heavy ion collider (RHIC) and NASA Space Radiation Laboratory (NSRL). Laser ion source (LIS) is a primary ion source provider for the BNL-EBIS. LIS with solenoid at the plasma drift section can realize the low peak current (～100 μA) with high charge (～10 nC) which is the BNL-EBIS requirement. The gap between two solenoids does not cause serious plasma current decay, which helps us to make up the BNL-EBIS beamline.     

Microwave ion source for high-current implanter

A long-life, high-current, microwave ion source for an electromagnetic mass separator is described. Ionization takes place due to the 2.45-GHz microwave discharge at a magnetic field intensity which is higher than the electron cyclotron resonance magnetic field. The discharge chamber is a ridged circular waveguide. The discharge region is restricted to a rectangular volume between the ridged electrodes by filling the remaining portions with dielectric. This source operates under low pressure (10(-2)-10(-3) Torr) and with high power efficiency. The incident microwave power is only several hundred watts at maximum output. When PH(3) gas is introduced, the total extracted current is about 40 mA with a 2x40-mm extraction slit. A P(+) ion implantation current of more than 10 mA is obtained by combining the source with a 40-cm radius, 60 degrees deflection magnetic mass separator.     

Rhenium ion beam for implantation into semiconductors

At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.     

Spectroscopically pure metal vapor source for highly charged ion spectroscopy and capillary discharge soft x-ray lasers

We describe a compact, pulsed metal vapor source used for the production of dense plasma columns of interest for both soft x-ray laser research and spectroscopy of highly ionized plasmas. The source generates spectroscopically pure cadmium vapor jets in a room-temperature environment by rapidly heating an electrode with a capacitive discharge. In the configuration described herein, the metal vapor jet produced by the source is axially injected into a fast (up to 15 kA/ ns), high current (up to 200 kA peak) capillary discharge to generate highly ionized cadmium plasma columns. Spectroscopic analysis of the discharge emission in the 12-25 nm spectral range evidences the dominance of Cu-like (CdXX) and Ni-like (CdXXI) lines and shows strong line emission at 13.2 nm from the 4d (1)S(0)-4p (1)P(1) laser transition of Ni-like Cd. Hydrodynamic/atomic physics simulations performed to describe the dynamics of the plasma column and compute the optimum discharge conditions for laser amplification are discussed.     

Reprint of: High current liquid metal ion source using porous tungsten multiemitters

We recently developed an indium Liquid-Metal-Ion-Source that can emit currents from sub-μA up to several mA. It is based on a porous tungsten crown structure with 28 individual emitters, which is manufactured using Micro-Powder Injection Molding (μPIM) and electrochemical etching. The emitter combines the advantages of internal capillary feeding with excellent emission properties due to micron-size tips. Significant progress was made on the homogeneity of the emission over its current-voltage characteristic as well as on investigating its long-term stability. This LMIS seems very suitable for space propulsion as well as for micro/nano manufacturing applications with greatly increased milling/drilling speeds. This paper summarizes the latest developments on our porous multiemitters with respect to manufacturing, emission properties and long-term testing.     

A subnanosecond pulsed ion source for micrometer focused ion beams

A new, compact design of an ion source delivers nanosecond pulsed ion beams with low emittance, which can be focused to micrometer size. By using a high-power, 25 fs laser pulse focused into a gas region of 10(-6) mbar, ions at very low temperatures are produced in the small laser focal volume of 5 mum diameter by 20 mum length through multiphoton ionization. These ions are created in a cold environment, not in a hot plasma, and, since the ionization process itself does not significantly heat them, have as a result essentially room temperature. The generated ion pulse, up to several thousand ions per pulse, is extracted from the source volume with ion optical elements that have been carefully designed by simulation calculations. Externally triggered, its subnanosecond duration and even smaller time jitter allow it to be superimposed with other pulsed particle or laser beams. It therefore can be combined with any type of collision experiment where the size and the time structure of the projectile beam crucially affect the achievable experimental resolution.     

Fabrication for multilayered composite thin films by dual-channel vacuum arc deposition

A flexible dual-channel curvilinear electromagnetic filter has been designed and constructed to fabricate multilayered composite films in vacuum arc ion plating. The filter possesses two guiding channels and one mixing unit. Multilayered TiN/AlN and TiAlN composite films can be produced by controlling the frequency or interval of the two cathodes. The x-ray photoelectron spectroscopy and low-angle x-ray diffraction results reveal the periodic Ti and Al structures in the TiN/AlN films. The TiAlN films exhibit a smooth surface morphology confirming effective filtering of macroparticles by the filter. High temperature oxidation conducted at 700 degrees C for an hour indicates that the weight increment in the TiAlN films produced by the dual filter is only half of that of the TiAlN films produced without a filter, thereby showing better resistance against surface oxidation.     

Direct-current cathodic vacuum arc system with magnetic-field mechanism for plasma stabilization

Filtered cathodic vacuum arc (FCVA) deposition is characterized by plasma beam directionality, plasma energy adjustment via substrate biasing, macroparticle filtering, and independent substrate temperature control. Between the two modes of FCVA deposition, namely, direct current (dc) and pulsed arc, the dc mode yields higher deposition rates than the pulsed mode. However, maintaining the dc arc discharge is challenging because of its inherent plasma instabilities. A system generating a special configuration of magnetic field that stabilizes the dc arc discharge during film deposition is presented. This magnetic field is also part of the out-of-plane magnetic filter used to focus the plasma beam and prevent macroparticle film contamination. The efficiency of the plasma-stabilizing magnetic-field mechanism is demonstrated by the deposition of amorphous carbon (a-C) films exhibiting significantly high hardness and tetrahedral carbon hybridization (sp3) contents higher than 70%. Such high-quality films cannot be produced by dc arc deposition without the plasma-stabilizing mechanism presented in this study.