Very Low Voltage CMOS Current Multiplier with Floating DC Level Shifters

A compact, wide dynamic range, four-quadrant analog CMOS current multiplier is presented. The use of floating DC level shifters (floating batteries) made by resistors and current sources allows low supply voltages while maintaining at the same time a large input range and low harmonic distortion. Measurement results for an experimental prototype in a 0.8 m CMOS technology demonstrate on silicon the proposed technique.     

IC Voltage to Current Transducers with Very Small Transconductance

This paper deals with the design of very small ac transconductance voltage to current transducers intended for the design of low frequency continuous-time filters, very large resistors and other applications. The first type of Operational Transconductance Amplifiers (OTA) is based on a triode biased transistor and a current division technique. The second one uses partial positive feedback which allows to reduce transistor dimensions but the sensitivity to transistor mismatches increases. The proposed techniques can be used for the design of high-order low frequency IC filters, ladder or based on biquads, with moderated transistor dimensions while the dynamic range-cutoff frequency performance is comparable to previously reported structures. A 10 Hz third order lowpass ladder filter has been designed with these techniques, and it shows a dynamic range of 62 dB. Besides, a novel biasing technique for capacitive sources coupled preamplifiers is proposed. Experimental results for a prototype, fabricated in a 1.2 m 1 level below 15 _RMS and dynamic range of 63 dB. The power consumption is only 10 watts and the supply voltages are ± 1.5 volts.     

Large Dynamic Range High Frequency Fully Differential CMOS Transconductance Amplifier

A large dynamic range high frequency fully differential CMOS transconductance amplifier is introduced. It is based on the linear transconductance element proposed in [8] combined with the common-mode feedback circuit in [9]. The original transconductance and common-mode circuits which use two supply voltages are modified for operation under a single power supply. The performance of the complete transconductance amplifier is analysed in details. Simulation results of the whole circuit are also presented, which show that with a single 5 V supply, bandwidth in excess of 300 MHz, THD below 0.7% for a 1 V _pk–pk differential input signal, and dynamic range in excess of 70 dB can be achieved for the fully differential transconductance amplifier.     

A High Speed, Low Voltage CMOS Offset Comparator

A high speed, low voltage offset comparator is presented. No common mode tracking circuit is used and the offset is added without compromising the high input impedance nature of the circuit. The circuit operates at 480 Mbps with 3.0–3.6 V and 1.6–2.0 V supplies and –40 to 125°C temperature range on a typical 0.5 m technology.     

Low-Voltage Analog Circuits Based on Wideband Capacitive Coupling

A technique for wideband low-voltage analog circuit operation based on capacitive signal coupling is discussed. Circuits based on this technique do not show the GB degradation of other low-voltage approaches based on floating-gate transistors. The technique is validated with simulations of a new CMOS mixer and experimental results of a test chip in a 0.5 m CMOS technology.     

Very Low Voltage Rail-to-Rail Programmable-Gain CMOS Amplifier

A novel design technique for operating closed-loop amplifier circuits at very low supply voltages is proposed. It is based on the use of quasi-floating gate transistors, avoiding issues encountered in true floating-gate structures such as the initial floating-gate charge, offset drift with temperature, and the gain-bandwidth product degradation. A programmable-gain differential amplifier is designed and implemented following this method. Measurement results of an experimental prototype fabricated in a 0.5-m CMOS technology validate on silicon the proposed technique.     

A Bernoulli Cell-Based Investigation of the Non-Linear Dynamics in Log-Domain Structures

This paper presents a low-level treatment of the non-linear dynamics encountered in log-domain structures, by means of a non-linear circuit element termed a Bernoulli Cell. This cell comprises an npn BJT and an emitter-connected grounded capacitor, and its dynamic behavior is determined by a differential equation of the Bernoulli form. The identification of the Bernoulli Cell leads to the creation of a system of linear differential equations which describe the dynamics of the derived log-domain state-variables. Furthermore, it is shown that the Bernoulli Cell has a memristive type dynamic behavior. The approach aids the analysis of log-domain circuits, and allows the internal non-linear currents to be conveniently expressed in closed analytical form. A worked example for a specific topology with confirming simulation results in both frequency and time-domain is presented. The celebrated Hodgkin-Huxley nerve axon membrane dynamics are also successfully simulated as a characteristic example of memristive behavior.     

Low-Voltage Rail-to-Rail Tunable FGMOS Transconductor

A compact, tunable CMOS transconductor is presented. The combined use of a Floating-Gate MOS (FGMOS) differential pair and a floating DC level shifter allows the use of low supply volatages while maintaining at the same time a rail-to-rail input range, low distortion and high linearity. Measurement results for a prototype fabricated using a 0.8 m CMOS technology are provided, confirming on silicon the validity of the proposed approach.     

Current-Mode Multiplier/Divider Circuits Based on the MOS Translinear Principle

In this paper, novel current-mode analog multiplier/divider circuits based on a pair of voltage-translinear loops are presented, featuring simplicity, precision and wide dynamic range. They are suitable for standard CMOS fabrication and can be successfully employed in a wide range of analog signal processing applications. Two versions, based on stacked and up-down voltage-translinear loops, respectively, are described. Experimental results are provided in order to verify their correct operation.     

0.4-V bulk-driven differential-difference amplifier

A new solution for an ultra-low-voltage, low-power, bulk-driven fully differential-difference amplifier (FDDA) is presented in the paper. Simulated performance of the overall FDDA for a 50 nm CMOS process and supply voltage of 0.4 V, shows dissipation power of 31.8 μW, the open loop voltage gain of 58.6 dB and the gain-bandwidth product (GBW) of 2.3 MHz for a 20 pF load capacitance. Despite the very low supply voltage, the FDDA exhibits rail-to-rail input/output swing. The circuit performance has also been tested in two applications; the differential voltage follower and the second-order band-pass filter, showing satisfactory accuracy and dynamic range.     

Characterization of Floating Gate Defects in Analog Cells

A unified approach to tackle the characterization of the floating gate defect in analog and mixed-signal circuits is introduced. An electrical level model of the defective circuit is proposed extending previous models used effectively in the digital domain. The poly-bulk, poly-well, poly-power rail and metal-poly capacitances are significant parameters in determining the behavior of the floating gate transistor. The model is used to analyze the feasibility of testing a simple analog cell with the floating gate defects through the observation of the quiescent current consumption and the dynamic behavior.     

Switched-capacitor decimation filter design using time-multiplexing and polyphase decomposition of transfer functions with low denominator orders

A new switched-capacitor decimation filter design technique is presented. Based on a combination of the polyphase decomposition of IIR low-pass transfer functions having small denominator order and time-multiplexed operational transconductance amplifiers, the filter presents very low sensitivity to transfer function coefficients. It suits analog front-end systems by providing signal conditioning and relaxing the filtering requirements in converting between continuous-time and discrete-time signals. A prototype decimation filter has been designed and fabricated in a standard CMOS process to verify the proposed approach. In fully differential design, the filter has a die area of 2.8 mm², dissipates 67.2 mW out of a 5 V power supply and achieves a dynamic range of 58 dB at 1% THD. Experimental measurements are found in close agreement with theory.     

Winner-Take-All Class AB Input Stage

A novel technique to implement class AB differential amplifier input stages is proposed. It is based on the use of Winner-Take-All circuits for achieving dynamic current boosting, and is well suited for low-voltage operation. Experimental measurements of an OTA using this technique, fabricated in a 0.5-μm CMOS technology, show a slew rate of 92 V/μs for an 80-pF load and 120 μW of static power consumption.     

“Square Root Domain” Filter Design and Performance

This paper discusses the implementation and performance of square root domain filters, which can be considered as the CMOS equivalent of the bipolar log domain technique. The square root design methodology is based on exploiting the MOSFET large-signal square law characteristic to implement filters which are input-output linear, but operate with internally non-linear signals. The design of subcircuits required for the implementation of square root domain filters is described based on the MOSFET translinear principle, and various performance issues are discussed. Simulation and measured results are also presented to confirm the validity of this approach, which may be attractive for low-voltage operation at frequencies in the MHz range.     

A CMOS Four Quadrant Current/Transconductance Multiplier

This paper describes a highly linear current four quadrant multiplier. The circuit is designed to operate in a fully differential way. It is based on the square-law characteristic of MOS transistors in saturation region. Experimental results for 2 m CMOS technology are provided.     

Design Strategies for Class A CMOS CCIIS

In this paper, solutions for class A CCIIs are discussed and design arrangements are suggested to achieve improved performance in terms of gain accuracy, impedance level, offset and linearity. The noise performance is also evaluated and compared for the various solutions. Finally, a novel CCII is proposed which is based on an innovative arrangement of the biasing. The circuit provides a THD 15 dB lower than previous solutions and has a linearity feature which has low sensitive to the mismatch of the parameters and V _T .     

A 0.18 μm CMOS transimpedance amplifier with 26 dB dynamic range at 2.5 Gb/s

A new transimpedance amplifier (TIA) for 2.5 Gb/s optical communications fabricated in a standard 0.18 μm CMOS process is presented. The proposed TIA is based on a conventional structure with an inverting voltage amplifier and a feedback resistor, but incorporates a new technique to enhance the input dynamic range and to prevent the TIA from saturation at high input currents. According to electrical characterization the receiver shows an optical sensitivity of −26 dB m for a BER=10⁻¹², assuming a responsivity of 1 A/W, and an optical power dynamic range above 26 dB. The power consumption of the core is only 10.6 mW at a single supply voltage of 1.8 V.     

Wide dynamic range parallel feedback transimpedance amplifier for 10 Gb/s optical links

This paper presents the design and implementation of a new wide dynamic range parallel feedback (PF) transimpedance amplifier (TIA) for 10 Gb/s optical links. The wide dynamic range is attributed to the novel TIA architecture employing both shunt-shunt and shunt-series feedback networks. The outstanding features of the TIA are wide dynamic range, high gain, low power consumption and design simplicity. A prototype implemented in a 0.5 μm SiGe BiCMOS technology and operating at −3.3 V power supply features an 18.4 dBm dynamic range with a BER less than 10⁻¹², an optical sensitivity of −16 dBm, optical overload of +2.4 dBm, a bandwidth of 8.27 GHz, a gain of 950 Ω and a power consumption of 189 mW. The new parallel feedback architecture offers improved overload and noise performance when compared to previously reported, state of the art, single feedback TIA designs and meets all the 10 Gigabit Ethernet and short-reach OC-192 SONET specifications. Ricardo Andres Aroca received the B.S. (Hons) degree in electrical engineering from the University of Windsor, Canada, and the M.S. degree from the University of Toronto, Canada, in 2001 and 2004, respectively. In 2000 he spent two 4 month internships with Nortel Networks in the Microelectronics Department. Mr. Aroca received the Natural Sciences and Engineering Research Counsel of Canada (NSERC) Postgraduate Scholarship award in 2002. He is currently working toward the Ph.D. degree at the University of Toronto where his research interests lie in the area of high-frequency integrated circuits for wireless and wireline communication systems. C. Andre T. Salama received the B.A.Sc. (Hons.) M.A.Sc. and Ph. D. degrees, all in Electrical Engineering, from the University of British Columbia in 1961, 1962 and 1966 respectively. From 1962 to 1963 he served as a Research Assistant at the University of California, Berkeley. From 1966 to 1967 he was employed at Bell Northern Research, Ottawa, as a Member of Scientific Staff working in the area of integrated circuit design. Since 1967 he has been on the staff of the Department of Electrical and Computer Engineering, University of Toronto where he held the J.M. Ham Chair in Microelectronics from 1987 to 1997. In 1992, he was appointed to his present position of University Professor for scholarly achievements and preeminence in the field of microelectronics. In 1989-90, he was awarded the ITAC/NSERC Research Fellowship in information technology. In 1994, he was awarded the Canada Council I.W. Killam Memorial Prize in Engineering for outstanding career contributions to the field of microelectronics. In 2000, he received the IEEE Millenium Medal. In 2003, he received the Outstanding Lifetime Achievement Award from the Canadian Semiconductor Technology Conference for seminal and outstanding contributions to semiconductor device research and promotion of Canadian University research in microelectronics. In 2004, he received the NSERC Lifetime Achievement Award of Research Excellence for outstanding and sustained contributions to the field of microelectronics and the Networks of Centres of Excellence (NCE) Recognition Award for research excellence and outstanding leadership.He was associate editor of the IEEE Transactions on Circuits and Systems in 1986–88 and a member of the International Electron Devices Meeting (IEDM) Technical Program Committeein 1980–82, 1987–89 and 1996–98. He was the chair of the Solid State Devices Subcommittee for IEDM in 1998 and was a member of the editorial board of Solid State Electronics from 1984 to 2002. He is presently a member of the editorial board of the Analog IC and Signal Processing Journal and the Technical Program Committee of the International Symposium on Power Semiconductor Devices and ICs (ISPSD) and the Technical ProgramCommittee of the International Symposium on Low Power Electronics and Design (ISLPED). He chaired the technical program committee of ISPSD in 1996 and was the general chair for the conference in 1999.Dr. Salama is the Scientific Director of Micronet, a network of centres of excellence focussing on microelectronics research and funded by the Canadian Government and Industry. He has published extensively in technical journals, is the holder of eleven patents and has served as a consultant to the semiconductor industry in Canada and the U.S. His research interests include the design and fabrication of semiconductor devices and integrated circuits with emphasis on deep submicron devices as well as circuits and systems for high speed, low power signal processing applications. Dr. Salama is a Fellow of the Institute of Electrical and Electronics Engineers, a Fellow of the Royal Society of Canada, a Fellow of the Canadian Academy of Engineering, a member of the Association of Professional Engineers of Ontario, the Electrochemical Society and the Innovation Management Association of Canada.     

A Reconfigurable Gaussian/Triangular Basis Functions Computation Circuit

A CMOS Gaussian/Triangular Basis functions computation circuit suitable for analog neural networks is proposed. The circuit can be configured to realize any of the two functions. The circuit can approximate these functions with relative root-mean-square error less than 1%. It is shown that the center, width, and peak amplitude of the dc transfer characteristic can be independently controlled. SPICE simulation results using 0.18 μ m CMOS process model parameters of TSMC18 technology are included. Muhammad Taher Abuelma'Atti was born in Cairo, Egypt, in 1942. He received the B.Sc. degree in Electrical Engineering in 1963 from the University of Cairo, Cairo, Egypt, the Ph.D. degree in 1979 and the Doctor of Science degree in 1999 both from the University of Bradford, Bradford, England. From 1963 to 1967, he worked at the Military Technical College in Cairo as a Teaching Assistant. He was with the Iron and Steel Company in Helwan, Cairo, from 1967 to 1973 as a Senior Electrical Engineer. From 1973 to 1976 he was with the College of Engineering, University of Riyadh, Saudi Arabia, as a Teaching Assistant. From 1980 to 1981, he worked with the Faculty of Engineering, University of Khartoum, Sudan, as an Assistant Professor, and from 1981 to 1982 he was with the College of Engineering, King Saud University, Riyadh, Saudi Arabia, as an Assistant Professor. In 1982 he joined the College of Engineering, University of Bahrain and in 1987 he became an Associate Professor. In 1991 he joined the College of Engineering Sciences, King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia, where he became a Full Professor in January 1995. Dr. Abuelma'Atti is the recipient of the 1994/1995 Excellence in Teaching Award and the 1995/1996 and 2000/2001 Excellence in Research Award. Both at King Fahd University of Petroleum and Minerals. Dr. Abuelma'Atti is a contributor to Encyclopedia of RF and Microwave Engineering, Kai Chang, Editor, (New York: John Wiley, 2005), Survey of Instrumentation and Measurement, S.A. Dyer, Editor, (New York: John Wiley, 2001), The Encyclopedia of Electrical and Electronic Engineering, J.G. Webster, Editor, (New York:John Wiley, 1999), and Selected Papers on Analog Fiber-Optic Links, E.I. Ackerman, C.H. Cox III and N.A. Riza, Editors, SPIE Milestone Series, (Washington: SPIE Optical Engineering Press, 1998). His research interests include problems related to analysis and design of nonlinear electronic circuits and systems, analog integrated circuits and active networks design. He is the author or co-author of over 500 journal articles and technical presentations. Abdullah Bakri Shwehneh was born in Aleppo Syria, in 1973. He received the B. Sc. degree in electrical engineering in 1998 from Sumy State University, Sumy, Ukraine. In 2001, he received the Postgraduate Diploma in Automatic Control from Aleppo State University, Aleppo, Syria. In 2001, he joined the “Electronic Brain Company for Computer and Electronics” as an Electronic & Computer Engineer and since 2002, he is with King Fahd University of Petroleum and Minerals (KFUPM), Dhahran, Saudi Arabia, as a Research Assistant. In June 2005 he obtained his Master of Science Degree in Analog Electronics from KFUPM. At present he is a Ph.D. student at KFUPM. His main interests are in Nonlinear circuits, VLSI Analog Design and Neural Networks hardware implementation.     

A 1.5 V Current-Mode CMOS RMS-to-DC Converter

A very low voltage, current-mode CMOS RMS-to-DC converter is presented. It is fully designed using MOS Translinear techniques. More specifically, its main building blocks are a squarer/divider and a geometric-mean cell which are obtained by using simple second-order MOS Translinear loops in a folded configuration, leading to a very regular and compact implementation. A novel biasing technique is employed for such loops, allowing them to operate at supply voltages as low as 1.5 V. Experimental results for a prototype IC demonstrating the correct operation of the circuit are included.