基于HFSS的缝隙耦合贴片天线仿真

以缝隙耦合贴片天线为研究对象,利用HFSS软件建立了天线的物理模型,求解得到了回波损耗、驻波比等结果.优化缝隙的几何尺寸后,天线的性能得到较大提高.具体表现在:增加了中心工作频率处的回波损耗和驻波比;增加了频带宽度;提高了增益水平.     

60 GHz贴片天线用低温共烧陶瓷基板的微机械加工

为有效提升60 GHz贴片天线及阵列的辐射带宽,提出利用微机械手段加工天线的低温共烧陶瓷(LTCC)基板.通过微切削方法在特定生瓷层上制作贯通结构,充填可挥发牺牲材料,完成基板叠压、烧结,待牺牲层升华排净后最终构成三维微结构.设计、制备了悬臂梁、围框结构和微管道等工艺样品.对天线设计电性能进行全波分析,并测试了微流道散热特性.实验结果表明:提出的方法成功解决了不同轴系各方向收缩率不一致、空腔塌陷等工艺问题,制作出的悬臂梁与围框尺寸高宽比达4∶1,总长为12 mm,总层厚为1.4 mm;内嵌微流道横截面为200 μm× 200 μm,长度达25 cm以上;内部光滑,基板表面贴装发热功率密度达2 W/cm2的功率器件时提供40 K以上的冷却能力;基板经过微机械加工后,天线的辐射带宽可从2.7 GHz增加到5.3 GHz,而增益的损失甚微.这些结果显示,用简单、低成本的微机械加工方法可在不显著增加制造成本的情况下有效扩增毫米波贴片天线的辐射带宽,为贴片天线阵中有源发射功率器件的设计和贴片天线的三维高密度集成提供了有效的技术支持.     

微带贴片天线应变传感器优化设计研究

承载部件作为高端装备中最常见的结构单元,在役过程中受载荷和应力集中影响极易萌生裂纹,导致结构失效,实时监测结构关键部件的应变状态对保障结构健康至关重要。基于微波无损检测技术,揭示了矩形微带贴片天线的辐射元尺寸对其固有谐振频率的影响规律,探究了微带贴片天线谐振频率与应变的相互作用机理。矩形微带贴片天线可激发单频和双频谐振频率,改变矩形辐射元的长度或宽度,其谐振频率会发生频移。实验结果表明,当对金属接地板施加一定拉应力时,贴片天线几何尺寸会发生改变,其谐振频率也随之发生偏移,据此可推算出金属接地板的应变大小,这对关键承载部件的应变和裂纹实时监测具有重要的研究意义。     

接地板变形对微带阵列电性能影响的仿真分析

针对微带阵列天线在制造与使用过程中接地板存在变形的情况,仿真分析了碗状与正弦周期2种结构变形对天线电性能的影响。首先将结构规则的微带贴片天线等效为2条辐射缝隙,研究了其接地板变形对其端口特性与辐射性能的影响。然后通过改变贴片长度和馈电点位置调整了天线的谐振频率和阻抗匹配。在此基础上,建立了矩形排布的4×4贴片阵列,分析了接地板碗状变形与正弦周期变形对阵列辐射性能的影响。仿真数据与图表反映了接地板变形对阵列天线电性能的影响规律。     

一种基于超材料的宽频带定向性微带天线

针对传统微带天线频带窄,增益低等不足,通过在天线的辐射贴片和接地板上分别刻蚀花型和十字交叉缝隙图案,设计并制作了一种基于超材料的宽频带定向性微带天线。刻有图案的金属贴片和接地板间形成电容感应等效回路并改变了天线电磁场的辐射方向。天线电磁场的辐射方向主要集中在水平–x方向而不是传统微带天线的垂直方向。相比传统微带天线,该设计天线的性能得到明显改善。仿真结果表明:天线的工作带宽为3.5~11.6 GHz(是传统微带天线的23.8倍),相对带宽为107.3%,在整个频段内天线的电压驻波比小于2,增益均大于5 d B。测试结果表明:设计天线的工作带宽为2.82~12.69 GHz(是仿真模型的1.22倍),相对带宽为127.3%。该设计天线可广泛地用于弹载天线,炮瞄雷达,卫星通信网络、汽车雷达等。     

基于矩形贴片天线的应变传感器模拟与测试

当贴片天线经历应变时,天线形状发生改变,导致其谐振频率发生偏移。基于此原理,提出采用矩形贴片天线的应变传感器测量结构中的应变。采用了2.4GHz的1/4波长矩形贴片天线作为应变传感单元,首先,利用HFSS~(TM)软件设计应变传感器的尺寸参数,分别模拟该天线在长度与宽度方向经历拉应变时的谐振频率偏移;其次,分别将贴片天线以纵向、横向的方式粘贴在铝板上进行了受拉实验;最后,利用网络分析仪获得天线的谐振频率。模拟与测试结果表明,天线的谐振频率偏移与天线长度方向上的应变具有良好的线性关系,同时,天线宽度方向上的应变对其谐振频率的影响较小。     

微机械多层短接式蓝牙天线

集成电路与微机械天线对于基底介质的要求不同,前者需要高介电常数的介质,而后者所需介质的介电常数则较低,要将两者集成到一起存在一定困难.为了满足蓝牙通信器件的需要,以便将微带天线与电路集成在一起,设计了背腔-短接式微带贴片天线,并采用微机械加工工艺制作了样品,其10dB带宽达到了10%以上,辐射效率为67%,长度仅为1/6波长,基本达到了蓝牙通信器件的要求.     

基于喷墨打印的柔性贴片天线设计应用

讨论了贴片天线在外部载荷作用下的机械特性。在不同弯曲曲率条件下,测量了贴片天线的电阻;研究了结构PVC层厚度对于模型频率和振型的影响;对结构进行谐响应分析。发现贴片天线在不同弯曲曲率条件下,阻尼变化较小;随着PVC层厚度的增加,模型的频率随之增加,但振型没有变化;在外部集中力作用下,结构在480 Hz频率位置处出现位移最大值。研究结果表明,该贴片天线具有良好的柔性可弯曲性,中间层厚度对结构最上层的频率变化影响显著,在设计贴片天线时应考虑结构层的厚度影响因素。本研究可为贴片天线的实际应用提供一定程度的指导作用。     

硅片预对准机器人边缘信息采集处理方法

针对90 nm工艺、300 mm直径大尺寸硅片对制造设备的新要求,提出一种硅片边缘信息采集、处理方法,并在此基础上建立硅片预对准机器人视觉系统。该方法在小波阈值折衷去噪的基础上,利用最小二乘回归拟合和坐标加权平均的数值方法,通过对硅片边缘特征点的标定、过滤、综合和提取,有效地实现CCD采集信号向特征位置数据的转换,解决大尺寸硅片位置信息的获取和分析问题。重复定位精度测量试验结果表明,硅片预对准机器人视觉系统完成了硅片中心、缺口的检测定位,硅片预对准机器人对准精度达到了技术指标的要求,提高了整套硅片预对准系统的工作性能。     

贴片天线传感器平面二维应变测量方法研究

贴片天线传感器因无源无线、结构简单,能同时感知结构应变、裂纹等优点,在结构健康监测中具有广阔的发展前景。针对贴片天线应变传感器一维测量特性与被测结构的多维变形之间的维度差异问题,从理论上分析了贴片天线传感器的双频应变敏感特性,设计了一种用于二维应变测量的组合贴片天线传感器,由垂直布置的贴片天线及一片斜向45°布置的寄生贴片天线组成,基质材料选用耐热性和耐潮性较好的FR4层压板。采用COMSOL Multiphysics仿真软件研究了组合贴片天线传感器的"谐振频率-应变"关系,通过试验探究了其平面结构的二维应变检测性能,并与电阻应变片测量结果进行对比。理论、仿真和试验结果均表明,组合贴片天线检测平面结构的二维应变效果良好,可应用于板梁结构平面应力场的主应力和主方向测量。     

微机械微带贴片天线研究

研究了以硅材料作基底的微机械微带贴片天线.采用微细加工技术,将金属导体贴片下方的硅基底背向刻蚀出一个空腔,形成硅材料和空气构成的混合结构,从而降低基底有效介电常数.对混合结构基底的等效介电常数、天线相关参数作了理论与实验比较.     

Effects of size and shape of metallic objects on performance of passive radio frequency identification

Passive ultra high frequency (UHF) spectrum radio frequency identification (RFID) systems have numerous applications. Continuous research and development of RFID systems is carried out to study solutions for different challenging cases of identification. Metallic objects set challenges for identification due to the behavior of electromagnetic waves on conductive boundaries. Therefore, novel tag designs have been developed for identification of metallic objects. This article presents a performance comparison of two different metal-mountable tag antennas, which are printed inverted-F antenna (IFA) and microstrip patch antenna with photonic band gap (PBG) ground plane and with regular ground plane. The effects of size and shape of metallic objects on tag antenna performance are studied with read range measurements and compared between the tag antenna types.     

Radiation Characteristics of Rectangular Patch Antennas with an Array of Pins

The patch antennas with an array of pins (pin array patch antennas) with excellent radiation characteristics are investigated for various substrate thicknesses.The radiation in the horizontal plane of a pin array patch antenna is very small campared to that of a conventional patch antenna.And the increase of forward radiation and the decrease of backward radiation of a pin array patch antenna are tained than these conventional one's.Also the half-power beamwidth of E-plane radiation pattern of a pin array patch antenna is narrower compared to that of the conventional so that the directivity is improved.     

工件旋转法磨削硅片的磨粒切削深度模型

半导体器件制造中,工件旋转法磨削是大尺寸硅片正面平坦化加工和背面薄化加工最广泛应用的加工方法。磨粒切削深度是反映磨削条件综合作用的磨削参量,其大小直接影响磨削工件的表面/亚表面质量,研究工件旋转法磨削的磨粒切削深度模型对于实现硅片高效率高质量磨削加工具有重要的指导意义。通过分析工件旋转法磨削过程中砂轮、磨粒和硅片之间的相对运动,建立磨粒切削深度模型,得到磨粒切削深度与砂轮直径和齿宽、加工参数以及工件表面作用位置间的数学关系。根据推导的磨粒切削深度公式,进一步研究工件旋转法磨削硅片时产生的亚表面损伤沿工件半径方向的变化趋势以及加工条件对磨削硅片亚表面损伤的影响规律,并进行试验验证。结果表明,工件旋转法磨削硅片的亚表面损伤深度沿硅片半径方向从边缘到中心逐渐减小,随着砂轮磨粒粒径、砂轮进给速度、工件转速的增大和砂轮转速的减小,加工硅片的亚表面损伤也随之变大,试验结果与模型分析结果一致。     

湿式机械化学磨削单晶硅的软磨料砂轮及其磨削性能

针对干式机械化学磨削(Mechanical chemical grinding, MCG)单晶硅过程中易产生磨削烧伤、粉尘多、加工环境差等问题,研制一种可用于湿式MCG单晶硅的新型软磨料砂轮,并对砂轮的磨削性能及其磨削单晶硅的材料去除机理进行研究。根据湿式机械化学磨削单晶硅的加工原理和要求,制备出以二氧化硅为磨料、改性耐水树脂为结合剂的新型软磨料砂轮。采用研制的软磨料砂轮对单晶硅进行磨削试验,通过检测加工硅片的表面/亚表面质量对湿式MCG软磨料砂轮的磨削性能进行分析,并与传统金刚石砂轮、干式MCG软磨料砂轮的磨削性能进行对比。采用X射线光电子能谱仪对磨削前后硅片的表面成分进行检测,分析湿式MCG加工硅片过程中发生的化学反应。结果表明,采用湿式MCG软磨料砂轮加工硅片的表面粗糙度Ra值为0.98 nm,亚表面损伤层深度为15 nm,湿式MCG软磨料砂轮磨削硅片的表面/亚表面质量远优于传统金刚石砂轮,达到干式MCG软磨料砂轮的加工效果,可实现湿磨工况下硅片的低损伤磨削加工。在湿式MCG过程中,单晶硅、二氧化硅磨粒与水发生了化学反应,在硅片表面生成易于去除的硅酸化合物,硅酸化合物进一步通过砂...     

扇形梳齿驱动式体硅微机械 隧道陀螺仪的设计与制备

介绍了一种利用隧道效应所具有的高位移敏感特性来获得较高灵敏度的微机械隧道振动陀螺仪的设计和工艺制备,该陀螺仪分别采用扇形梳齿驱动和面外振动悬臂梁的方式实现质量块的振动和恒隧道电流的检测。介绍了扇形梳齿驱动的工作原理和隧道陀螺仪的设计。由于采用了硅玻键合和深反应离子蚀刻(DRIE)的DDSOG体硅制备工艺,因而可获得较大的敏感质量块,从而使陀螺仪具有较高的灵敏度和较大的动态响应范围。根据检测模态和驱动模态匹配的原则,利用有限元模型对隧道陀螺仪的结构尺寸进行了优化,仿真结果表明,该陀螺仪在常压下的灵敏度为0.007 nm(°)/s。     

A GRINDING-BASED MANUFACTURING METHOD FOR SILICON WAFERS: DECOMPOSITION ANALYSIS OF WAFER SURFACES

It is difficult for the lapping-based manufacturing method currently used to manufacture the majority of silicon wafers to meet the ever-increasing demand for flatter wafers at lower costs. A grinding-based manufacturing method for silicon wafers has been investigated. It has been demonstrated that the site flatness on the ground wafers (except for a few sites at the wafer center) could meet the stringent specifications for future silicon wafers. The generation mechanisms of the dimples and bumps in the central areas on ground wafers have also been studied. This paper reports another study on the grinding-based method, aiming to reduce the cost of chemical-mechanical polishing – the final material removal process in manufacturing of silicon wafers. Using design of experiments, investigations were carried out to understand the influences of grinding process variables on the peak-to-valley values of the polished wafer surfaces. It was found that the peak-to-valley values over the entire wafer surfaces did not show any relationship with grinding process variables. However, after analyzing the surface profiles by decomposing them into different frequencies, it was observed that there is a correlation between grinding process variables and certain surface feature components. Based on this finding, it is recommended to optimize the grinding process variables by minimizing the peak-to-valley values for each surface feature component, one at a time. This methodology has not been published for wafer grinding and is of practical use to the wafer industry.     

A GRINDING-BASED MANUFACTURING METHOD FOR SILICON WAFERS: DECOMPOSITION ANALYSIS OF WAFER SURFACES

It is difficult for the lapping-based manufacturing method currently used to manufacture the majority of silicon wafers to meet the ever-increasing demand for flatter wafers at lower costs. A grinding-based manufacturing method for silicon wafers has been investigated. It has been demonstrated that the site flatness on the ground wafers (except for a few sites at the wafer center) could meet the stringent specifications for future silicon wafers. The generation mechanisms of the dimples and bumps in the central areas on ground wafers have also been studied. This paper reports another study on the grinding-based method, aiming to reduce the cost of chemical-mechanical polishing - the final material removal process in manufacturing of silicon wafers. Using design of experiments, investigations were carried out to understand the influences of grinding process variables on the peak-to-valley values of the polished wafer surfaces. It was found that the peak-to-valley values over the entire wafer surfaces did not show any relationship with grinding process variables. However, after analyzing the surface profiles by decomposing them into different frequencies, it was observed that there is a correlation between grinding process variables and certain surface feature components. Based on this finding, it is recommended to optimize the grinding process variables by minimizing the peak-to-valley values for each surface feature component, one at a time. This methodology has not been published for wafer grinding and is of practical use to the wafer industry.