Fabrication and electrical properties of Bi2-xSbxTe3 ternary nanopillars array films

Highly oriented Bi_2-xSb_xTe₃ (x?=?0, 0.7, 1.1, 1.5, 2) ternary nanocrystalline films were fabricated using vacuum thermal evaporation method. Microstructures and morphologies indicate that Bi_2-xSb_xTe₃ films have pure rhombohedral phase with well-ordered nanopillars array. Bi, Sb and Te atoms uniformly distributed throughtout films with no precipitation. Electrical conductivity of Bi_2-xSb_xTe₃ films transforms from n-type to p-type when x?>?1.1. Metal-insulator transition was observed due to the incorporation of Sb in Bi₂Te₃. Bi_2-xSb_xTe₃ film with x?=?1.5 exhibits optimized electrical properties with maximum electrical conductivity σ of 2.95?×?10⁵ S?m^?1 at T?=?300?K, which is approximately ten times higher than that of the undoped Bi₂Te₃ film, and three times higher than previous report for Bi_0.5Sb_1.5Te₃ films and bulk materials. The maximum power factor PF of Bi_0.5Sb_1.5Te₃ nanopillars array film is about 3.83?μW?cm^?1 K^?2 at T?=?475?K. Highly oriented (Bi,Sb)₂Te₃ nanocrystalline films with tuned electronic transport properties have potentials in thermoelectric devices.     

Crystal structure,impedance and broadband dielectric spectra of ordered scheelite-structured Bi(Sc1/3Mo2/3)O4 ceramic

Bi(Sc_1/3Mo_2/3)O₄ ceramics were prepared via solid state reaction method. It crystallized with an ordered scheelite-related structure (a?=?16.9821(9)?Å, b?=?11.6097(3)?Å, c?=?5.3099(3)?Å and β?=?104.649(2)°) with a space group C12/C1, in which Bi³⁺, Sc³⁺ and Mo⁶⁺ are ?8, ?6 and ?4 coordinated, respectively. Bi(Sc_1/3Mo_2/3)O₄ ceramics were densifiedat 915?°C, giving a permittivity (ε_r) ～24.4, quality factor (Qf, Q?=?1/dielectric loss, f?=?resonant frequency) ～48, 100?GHz and temperature coefficient of resonant frequency (TCF)?～??68?ppm/°C. Impedance spectroscopy revealed that there was only a bulk response for conductivity with activation energy (E_a) ～0.97?eV, suggesting the compound is electrically and chemically homogeneous. Wide band dielectric spectra were employed to study the dielectric response of Bi(Sc_1/3Mo_2/3)O₄ from 20?Hz to 30?THz. ε_r was stable from 20?Hz to the GHz region, in which only ionic and electron displacive polarization contributed to the?ε_r.     

Effect of Bi2O3 and B2O3 additives on the sintering temperature, microstructure, and microwave dielectric properties for Sm(Mg0.5Ti0.5)O3 ceramics

The microwave dielectric properties of Sm(Mg_0.5Ti_0.5)O₃ incorporated with various amount of Bi₂O₃ and B₂O₃ additives have been investigated systematically. In this study, both Bi₂O₃ and B₂O₃ additives acting as a sintering aid can effectively lower the sintering temperature from 1550 °C to 1300 °C. The ionic radius of Bi³⁺ for a coordination number of 6 is 0.103 nm, whereas the ionic radius of B³⁺ is 0.027 nm. Clearly, the ionic radius of Bi³⁺ is greatly larger than one of B³⁺, which resulted in the specimens incorporated with Bi₂O₃ having larger lattice parameters and cell volume than those incorporated with B₂O₃. The experimental results show that no second phase was observed throughout the entire experiments. Depending on the interfacial tension, the liquid phase may penetrate the grain boundaries completely, in which case the grains will be separated from one another by a thin layer as shown in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with Bi₂O₃. Whereas, in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with B₂O₃, the volume fraction of liquid is high, the grains may dissolve into the liquid phase, and rapidly rearrange, in which case contact points between agglomerates will be dissolved due to their higher solubility in the liquid, leading plate-like shape microstructure.A dielectric constant (?_r) of 29.3, a high Q × f value of 26,335 GHz (at 8.84 GHz), and a τ_f of −32.5 ppm/°C can be obtained for Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 10 mol% Bi₂O₃ sintered at 1300 °C. While Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 5 mol% B₂O₃ can effectively lower temperature coefficient of resonant frequency, which value is −21.6 ppm/°C. The Sm(Mg_0.5Ti_0.5)O₃ ceramic incorporated with heavily Bi₂O₃ and B₂O₃ additives exhibits a substantial reduction in temperature (∼250 °C) and compatible dielectric properties in comparison with that of an un-doped one. This implied that this ceramic is suitable for miniaturization in the application of dielectric resonators and filters by being appropriately incorporated with a sintering aid.     

Structure and electrical properties of Ca2+-doped (Na0.47Bi0.47Ba0.06)TiO3 lead-free piezoelectric ceramics

The lead-free piezoelectric ceramics (Na_.47Bi_.47Ba_.06)_1-xCa_xTiO₃ (x?=?0, 0.01, 0.02, 0.03, 0.05, and 0.08, abbreviated as BNBTC/0, BNBTC/1, BNBTC/2, BNBTC/3, BNBTC/5, and BNBTC/8, respectively) were obtained using the solid-state reaction method. The structure, electric conductivity, and dielectric, ferroelectric, and piezoelectric properties of the Ca²⁺-doped (Na_.47Bi_.47Ba_.06)TiO₃ ceramics were thoroughly investigated. The ceramics sintered at 1200?°C exhibit dense microstructures, having relative densities higher than 96%. The X-ray diffraction results demonstrate that all ceramics have a pure perovskite structure. The mean grain sizes of the ceramics are related to the Ca²⁺ quantity. A small quantity of Ca²⁺ ions (x?≤?0.03) improves the piezoelectric and ferroelectric properties of the samples. The dielectric behavior of the samples is sensitive to the Ca²⁺ content and electric poling. The results demonstrate that the electrical properties of the (Na_.47Bi_.47Ba_.06)TiO₃ lead-free ceramics can be well tuned by varying the Ca²⁺ quantity.     

Effect of CeO2 on the thermoelectric properties of WO3-based ceramics

The thermoelectric properties of tungsten trioxide (WO₃) ceramics doped with cerium dioxide (CeO₂) were investigated. The results demonstrated that the addition of CeO₂ to WO₃ could promote the grain growth and the densification. The magnitude of the electrical conductivity (σ) and the absolute value of the Seebeck coefficient (|s|) depended strongly on the CeO₂ content. The sample doped with 2.0 mol% CeO₂ yielded higher σ and |s|, resulting in a significant increase in the power factor (σs²). In addition, the power factor value of all samples increased abruptly at high temperatures, which revealed that WO₃-based ceramics could have greater thermoelectric properties at high temperatures.     

Effects of Bi2O3-Nb2O5 additives on microstructure and magnetic properties of low-temperature-fired NiCuZn ferrite ceramics

NiCuZn ferrite with superior magnetic performance is vital ceramic material in multilayer chip inductors (MLCI) applications. In this study, low-temperature-sintered Ni_0.22Cu_0.2Zn_0.58Fe₂O₄ ferrite ceramic doped with 1.0?wt% Bi₂O₃-x?wt% Nb₂O₅ (where x?=?0.0, 0.1, 0.2, 0.3, 0.4 and 0.5) was synthesized via solid-state reaction method. Effects of Bi₂O₃-Nb₂O₅ additives on microstructures and magnetic properties of NiCuZn ferrite ceramics sintered at 900?°C were systematically investigated. Results indicate that an appropriate amount of Bi₂O₃-Nb₂O₅ composite additives can significantly promote grain growth and densification of NiCuZn ferrite ceramics when sintered at low temperatures. Specifically, samples doped with 1.0?wt% Bi₂O₃ and 0.4?wt% Nb₂O₅ additives exhibited excellent initial permeability (~ 410 @ 1?MHz), high cutoff frequency (~ 10?MHz), high saturation magnetization (~ 54.92?emu/g), and low coercive force (~ 20.32?Oe). These observations indicate that NiCuZn ferrite ceramics doped with appropriate amounts of Bi₂O₃-Nb₂O₅ additives are great candidate materials for MLCI applications.     

Gibbs free energy of formation of Bi2O3 from EMF cells with δ-Bi2O3 solid electrolyte

Determination of thermodynamic data on the formation of Bi₂O₃ was established by emf measurements as a function of temperature in the range 660–820°C on the system Metal, Bi(1)|Bi₂O₃|Pt, O₂. From the results using a tungsten electrode the following relation was found: ΔG⁰ = ?(134.7 ± 1.2) + (64.0 ± 1.2) × 10^?3 T kcal mole^?1 (validity range: 940–1080 K). Standard thermodynamic data at 298 K were calculated as ΔG⁰ = ?119.2 ± 2.1 kcal mole^?, ΔH⁰ = ?139.0 ± 1.2 kcal mole^?1, and ΔS⁰ = ?66.3 ± 1.2 eu.     

Effect of Mn-doping on the structure and electrical properties of (Pb0.325Sr0.675)TiO3 ceramics

Pb_0.325Sr_0.675Ti_1-xMn_xO₃ ceramics (x?=?0, 0.001, 0.005, 0.01, and 0.05) were successfully prepared by traditional solid-state reaction method. It was found that the lattice constant calculated through Rietveld refinement initially increased and then decreased with increasing Mn content, which was attributed to the variation in valence state of Mn and Ti ions. The microstructure gradually varied from the coexistence of large grains and fine grains for x?=?0 to the uniform grain for x?=?0.05 by increasing the doping Mn ions. With increasing Mn content from x?=?0 to x?=?0.05, the Curie temperature (Tc) dramatically decreased from 25?°C to ??40?°C and dielectric maximum decreased from 27,100 to 13,200. Pb_0.325Sr_0.675Ti_1-xMn_xO₃ ceramics with x?=?0.001 showed the lowest dielectric loss of 0.006 with a relatively high dielectric peak value of ~ 21,000. The grain boundaries resistance obtained from the complex impedance decreased with the increase of Mn content. The decrease in resistance was ascribed to oxygen vacancies and electronics produced by the change of ionic valence state. X-ray photoemission spectroscopy revealed that Ti ions were Ti⁴⁺ and the valences of Mn ions were deduced to be mainly in the form of Mn²⁺ and/or Mn³⁺ for ceramics with low content of Mn, while the Ti ions were in the form of Ti³⁺ and Ti⁴⁺ and Mn ions were diverse valence states with the coexistence of Mn²⁺, Mn³⁺, and Mn⁴⁺ for ceramics with x?=?0.01 and 0.05.     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Fabrication and piezoelectric properties of BaTiO3/BaTiO3-Bi(Mg1/2Ti1/2)O3-BiFeO3 composites

We fabricated xBaTiO₃ (BT)/(1-x)[BaTiO₃-Bi(Mg_1/2Ti_1/2)O₃-BiFeO₃] (BT-BMT-BF)?+?0.1?wt%MnCO₃ composites by spark plasma sintering and investigated the effect of BT content x, BT powder size, and BT-BMT-BF composition on piezoelectric properties. For xBT/(1-x)(0.3BT-0.1BMT-0.6BF) +?0.1?wt%MnCO₃ (x?=?0–0.75) composites with a 0.5-µm BT powder, the dielectric constant was increased with x, and the relative density was decreased at x?=?0.67 and 0.75, creating optimum BT content of x?=?0.50 with a piezoelectric constant d₃₃ of 107?pC/N. When a larger 1.5-µm BT powder was utilized for the composite with x?=?0.50, the d₃₃ value increased to 150?pC/N due to the grain size effect of the BT grains. To compensate for a compositional change from the optimum 0.3BT-0.1BMT-0.6BF due to partial diffusion between the BT and 0.3BT-0.1BMT-0.6BF grains, a 0.5BT/0.5(0.275BT-0.1BMT-0.625BF)?+?0.1?wt%MnCO₃ composite with the 1.5-µm BT powder was fabricated. We obtained an increased d₃₃ value of 166?pC/N. These results provided a useful composite design to enhance the piezoelectric properties.     

Compensation for volatile elements to modify the microstructure and energy storage performance of (W,Ni)-codoped Na0.5Bi0.5TiO3 ceramic films

This work reports the characteristics of nonstoichiometric Na_0.5+xBi_0.5+yTi_0.96W_0.01Ni_0.03O₃ (x?=?0.0%, y?=?1.0%; x?=?0.5%, y?=?2.0%; x?=?1.0%, y?=?4.0%) ceramic films derived from chemical solution deposition and the role played by excess Na/Bi in modifying microstructure and electrical properties. Single perovskite phase structure can be maintained in all compositions. Decreased grain size can be obtained with the increasing compensation for volatile Na/Bi elements. Particularly, extra amounts of 0.5?mol% Na and 2.0?mol% Bi leads to reduced leakage and enhanced ferroelectric polarization. Meanwhile, due to the high breakdown electrical field strength and large difference between maximum and remanent polarization, an excellent energy storage performance can be achieved in Na_0.505Bi_0.52Ti_0.96W_0.01Ni_0.03O₃ sample, which is distinguished by a recoverable energy storage density of 40.5?J/cm³ and an energy storage efficiency of 43.6% at 2515?kV/cm as well as a good frequency stability. Hence, the regulation for the content of volatile elements is effective to modify the electrical response of Na_0.5Bi_0.5TiO₃-based materials.     

Fast synthesis of MgAl2O4‒W and MgAl2O4‒W‒W2B composite powders by self-propagating high-temperature synthesis reactions

MgAl₂O₄?W and MgAl₂O₄?W?W₂B composite powders were obtained rapidly in a single step by self-propagating high-temperature synthesis of WO₃?Mg?xAl₂O₃ and WO₃?B₂O₃?Mg?yAl₂O₃ systems. The addition of various Al₂O₃ contents (x and y-values) to the starting materials was considered as the main synthesis parameter. Thermodynamic calculations revealed that the adiabatic temperature of both systems was decreased with increasing Al₂O₃ content. The XRD results indicated that after acid leaching of the WO₃?Mg?xAl₂O₃ combustion products, W and MgAl₂O₄ were formed as the main phases and WO₂, MgWO₄ and Al₂O₃ as the minor constituents in the final composite. On the other hand, MgAl₂O₄?W composites were synthesized in the WO₃?B₂O₃?Mg?yAl₂O₃ system at y<1.4 mol. By increasing the y-value to 2.1 mol, W₂B was formed as a new product leading to production of MgAl₂O₄?W?W₂B composite. The formation of spinel was confirmed by the Fourier transformed infrared spectroscopy analysis. Microstructure observations represented the uniform distribution of MgAl₂O₄ blocks within the fine spherical W particles. The melting of Al₂O₃ was found as a vital step for rapid synthesis of MgAl₂O₃ by the SHS route. Finally, the possible formation mechanism of MgAl₂O₄ during the combustion synthesis was proposed.     

Carbon-coated Bi5Nb3O15 as anode material in rechargeable batteries for enhanced lithium storage

Bismuth can alloy with lithium to generate Li₃Bi with the volumetric capacity of about 3765 mAh cm^?3 (386 mAh g^?1), rendering bismuth-based materials as attractive alloying-type electrode materials for rechargeable batteries. In this work, bismuth-based material Bi₅Nb₃O₁₅ @C is fabricated as anode material through a traditional solid-state reaction with glucose as carbon source. Bi₅Nb₃O₁₅ @C composite is well dispersed, with small particle size of 0.5–2.0?µm. The electrochemical performance of Bi₅Nb₃O₁₅ @C is reinforced by carbon-coated layer as desired. The Bi₅Nb₃O₁₅ @C exhibits a high specific capacity of 338.56 mAh g^?1 at a current density of 100?mA?g^?1. And it also presents an excellent cycling stability with a capacity of 212.06 mAh g^?1 over 100 cycles at 100?mA?g^?1. As a comparison, bulk Bi₅Nb₃O₁₅ without carbon-coating only remains 319.62 mAh g^?1 at 100?mA?g^?1, revealing poor cycle and rate performances. Furthermore, in-situ X-ray diffraction experiments investigate the alloying/dealloying behavior of Bi₅Nb₃O₁₅ @C. These insights will benefit the discovery of novel anode materials for lithium-ion batteries.     

Low temperature sintering and microwave dielectric properties of Ce2(WO4)3 ceramics

Ce₂(WO₄)₃ ceramics have been synthesized by the conventional solid-state ceramic route. Ce₂(WO₄)₃ ceramics sintered at 1000 °C exhibited ?_r = 12.4, Qxf = 10,500 GHz (at 4.8 GHz) and τ_f = −39 ppm/°C. The effects of B₂O₃, ZnO–B₂O₃, BaO–B₂O₃–SiO₂, ZnO–B₂O₃–SiO₂ and PbO–B₂O₃–SiO₂ glasses on the sintering temperature and microwave dielectric properties of Ce₂(WO₄)₃ were investigated. The Ce₂(WO₄)₃ + 0.2 wt% ZBS sintered at 900 °C/4 h has ?_r = 13.7, Qxf = 20,200 GHz and τ_f = −25 ppm/°C.     

Effects of Yb3+ doping on phase structure,thermal conductivity and fracture toughness of (Nd1-xYbx)2Zr2O7

To investigate the effects of Yb³⁺ doping on phase structure, thermal conductivity and fracture toughness of bulk Nd₂Zr₂O₇, a series of (Nd_1-xYb_x)₂Zr₂O₇ (x?=?0, 0.2, 0.4, 0.6, 0.8, 1.0) ceramics were synthesized using a solid-state reaction sintering method at 1600?°C for 10?h. The phase structures were sensitive to the Yb³⁺ content. With increasing doping concentration, a pyrochlore-fluorite transformation of (Nd_1-xYb_x)₂Zr₂O₇ ceramics occurred. Meanwhile, the ordering degree of crystal structure decreased. The substitution mechanism of Yb³⁺ doping was confirmed by analyzing the lattice parameter variation and chemical bond of bulk ceramics. The thermal conductivities of (Nd_1-xYb_x)₂Zr₂O₇ ceramics decreased first and then increased with the increase of Yb³⁺ content. The lowest thermal conductivity of approximately 1.2?W?m^?1 K^?1 at 800?°C was attained at x?=?0.4, around 20% lower than that of pure Nd₂Zr₂O₇. Besides, the fracture toughness reached a maximum value of ~1.59?MPa?m^1/2 at x?=?0.8 but decreased with further increasing Yb³⁺ doping concentration. The mechanism for the change of fracture toughness was discussed to result from the lattice distortion and structure disorder caused by Yb³⁺ doping.     

Enhanced piezoelectric properties and electrical resistivity in W/Cr co-doped CaBi2Nb2O9 high-temperature piezoelectric ceramics

W/Cr co-doped Aurivillius-type CaBi₂Nb_2-x(W_2/3Cr_1/3)_xO₉ (CBN) (x?=?0.025, 0.050, 0.075, 0.100, and 0.150) piezoelectric ceramics were prepared by the conventional solid-state reaction method. The crystal structure, microstructure, dielectric properties, piezoelectric properties, and electrical conductivity of these ceramics were systematically investigated. After optimum W/Cr modification, the CBN ceramics showed both high d₃₃ and T_C. The ceramic with x?=?0.1 showed a remarkably high d₃₃ value of ~15 pC/N along with a high T_C of ~931?°C. Moreover, the ceramic also showed excellent thermal stability evident from the increase in its planar electromechanical coupling factor k_p from 8.14% at room temperature to 11.04% at 600?°C. After annealing at 900?°C for 2?h, the ceramic showed a d₃₃ value of 14?pC/N. Furthermore, at 600?°C, the ceramic also showed a relatively high resistivity of 4.9?×?10⁵ Ω?cm and a low tanδ of 9%. The results demonstrated the potential of the W/Cr co-doped CBN ceramics for high-temperature applications. We also elucidated the mechanism for the enhanced electrical properties of the ceramics.     

Effect of ZnO–WO3 additives on sintering behavior and microwave dielectric properties of 0.95MgTiO3–0.05CaTiO3 ceramics

The effect of WO₃ addition on the phase formation, the microstructures and the microwave dielectric properties of 1 wt% ZnO doped 0.95MgTiO₃–0.05CaTiO₃ ceramics system were investigated. Formation of second phase MgTi₂O₅ could be effectively restrained through the addition of WO₃, but should be in right amount. WO₃ as additives could not only effectively lower the sintering temperature of the ceramics to 1310 °C, but also promote the densification. A dielectric constant ε_r of 20.02, a Q×f value of 62,000 (at 7 GHz), and a τ_f value of −5.1 ppm/°C were obtained for 1 wt% ZnO doped 0.95MgTiO₃–0.05CaTiO₃ ceramics with 0.5 wt% WO₃ addition sintered at 1310 °C.     

Enhanced piezoelectric properties and temperature stability of Bi4Ti3O12-based Aurivillius ceramics via W/Nb substitution

Bi₄Ti₃O₁₂ (BIT), a typical Aurivillius ceramics with high Curie temperature (T_c ? 675 °C), has great potential for high temperature applications. This work provides an effective method of inducing structure distortion, relieving the tetragonal strain of the TiO₆ octahedron and decreasing the concentration of oxygen vacancies to improve the piezoelectricity and temperature stability of BIT ceramics. Bi₄Ti_2.98W_0.01Nb_0.01O₁₂ possesses an optimum piezoelectric coefficient (d₃₃) of 32 pC/N, a high T_c of 655 °C and a large resistivity of 3 × 10⁶ Ω·cm at 500 °C. The maximum d₃₃ reported here is approximately quadruple than that of pure BIT (?7 pC/N). Moreover, the d₃₃ of W/Nb co-doped BIT and the in-situ temperature stability of the compression-mode sensor present a highly stable characteristic in the range of 25–600 °C. These results imply that W/Nb-modified BIT ceramics is a promising candidate for application at high temperatures of up to 600 °C.     

Fabrication and electrical properties of textured (Na,K)0.5Bi0.5TiO3 ceramics by reactive-templated grain growth

Textured (Na_0.85K_0.15)_0.5Bi_0.5TiO₃ (NKBT) ceramics with a relative density of >94% were fabricated by reactive-templated grain growth. Plated-like Bi₄Ti₃O₁₂ template particles synthesized by the NaCl–KCl molten salt process were aligned by tape casting in a mixture of original oxide powders. The effect of sintering temperature on the grain orientation and electrical properties of textured NKBT ceramics were investigated. The results show that the textured ceramics have a microstructure with plated-like grains aligning in the direction parallel to the casting plane. The degree of grain orientation increased at increasing sintering temperature. The textured ceramics show anisotropic electrical properties in the directions parallel and perpendicular to the casting plane. The dielectric constant parallel to {h 0 0} plane is three times higher than that of the perpendicular direction in textured NKBT ceramics. The optimized sintering temperature is 1150 °C where the maximum dielectric constant is 2041, the remnant polarization is 68.7 μC/cm², the electromechanical coupling factor (k₃₁) and the piezoelectric constant (d₃₃) amount to 0.31 and 134 pC/N, respectively.     

Study on thermolysis process of a new hydrated and protonated perovskite-like oxides H2K0.5Bi2.5Ti4O13·yH2O

A protonated form of the n?=?4 layered bismuth containing perovskite-like titanate K_2.5Bi_2.5Ti₄O₁₃ belonging to Ruddlesden-Popper phases was prepared via ion exchange reaction of interlayer K⁺ with protons. Its composition was investigated by TG ICP and EDX analysis was found to be H₂K_0.5Bi_2.5Ti₄O₁₃·H₂O. The thermal behavior of the obtained phase was investigated by STA coupled with mass-spectrometry, the structural changes, happening with the sample during heating, were examined by XRD. It was shown that the as-prepared hydrated phase undergoes two-stage dehydration at low temperatures (up to 160?°C). The further heating leads to the gradual decomposition and crystallization of new phases, notably Bi₂Ti₂O₇, Bi₄Ti₃O₁₂ and Bi₂Ti₄O₁₁. The morphology of the as-prepared sample and samples after heat treatment was examined using SEM.