一种双极性电调衰减器的设计

电调衰减器作为一种重要的有源控制器件,被广泛应用于射频微波电路中,其中PIN二极管电调衰减器最为常见.该文在理论研究的基础上,设计了一个工作在V/UHF波段的双极性电调衰减器.该电调衰减器的工作频段为30MHz ～ 512MHz,波段系数较高,属于超宽带微波器件,电调衰减器采用双极性结构设计,在工作频带内,电调衰减器的动态范围大,可达60dB以上,同时带内平坦度≤±0.5dB,与市场上同类产品相比,该双极性电调衰减器的性能极具优势.     

高功率大动态范围的双极性电调衰减器的设计

首先分析了由PIN二极管组成的桥式双极性电调衰减器的工作原理。然后讨论了其关键参数:插损、最大衰减、阻抗匹配、平衡点电流和驱动电路等的设计方法。最后,给出了研制的短波波段的电调衰减器的性能曲线。结果表明,研制的电调衰减器输入功率大,衰减的动态范围大,插入损耗小,阻抗匹配好,控制电压与电调的电压传输系数基本呈线性关系。     

程控衰减器设计技术

程控衰减器采用数字控制和电调衰减器相结合的方法，电路的衰减量随数字量的大小呈线性变化。本文主要介绍电路设计和温度补偿技术。     

0.5～10GHz小型微波电调衰减器

本文介绍一种小型微波电调衰减器。电路采用微型器件,结构紧凑,尺寸小,工作频带宽,插入损耗小,电调衰减量适中,非常适用于微波平面电路系统。也可装上同轴接头,构成小型同轴电调衰减器。     

电调衰减器驱动电路的设计

自动电平控制系统是微波信号源等信号发生设备中用于保证输出信号快速、稳定达到设定功率的关键电路，其中电调衰减器是自动电平稳幅电路中用于连续、单调调节通道增益、信号幅度的重要器件。电调衰减器在良好驱动信号的激励下，衰减量可以连续、线性单调变化，并能提供射频通道的良好匹配。本文根据自动电平稳幅设计的需要，结合电调衰减器驱动信号的特点，介绍了一种电调衰减器驱动电路的设计方法，通过该方法设计的驱动电路能够准确的模拟电调衰减器驱动信号的特征，且电路简单、成本较低，方便调试与实现。     

电调衰减器及其应用

介绍了吸收式电调衰减器的工作原理及电特性，在ＳＺＺ００１型及ＳＺＺ００２型电调衰减器基础上，又研制出调制速度极快的微波调制器，响应速度小于１００ｎｓ，还给出数字控制衰减器的电特性参数。     

110分贝电调衰减器

本文根据低通滤波器原理,利用PIN管芯,成功地研制出在4～5.5GHz内,插损小于2.5dB,衰减量可达100dB的电调衰减器。     

电调衰减器及其应用

介绍了吸收式电调衰减器的工作原理及电特性，在ＳＺＺ００１型及ＳＺＺ００２型电调衰减器基础上，又研制出调制速度极快的微波调制器，响应速度小于１００ｎｓ，还给出数字控制衰减器的电特性参数。     

程控衰减器设计技术

程控衰减器采用数字控制和电调衰减器相结合的方法, 电路的衰减量随数字量的大小呈线性变化。本文主要介绍电路设计和温度补偿技术。     

Ku波段电调衰减器模块设计

采用混合集成电路方法，用燕联ＰＩＮ二极管芯片在很小的腔体内制作Ｋｕ波段吸收式电调衰减器，动态范围〉２０ｄＢ，电压驻波比〈１．４，插入损耗〈０．８５ｄＢ，相位变化插入态／衰减态为２．７°，传输时间〈１００ｎｓ，线性度优于１０％。介绍了该模块的电路原理，设计方法和结果。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.