Synthesis and characterization of boron-doped Si quantum dots for all-Si quantum dot tandem solar cells

Multiple layers of Si quantum dots (QDs) in SiO₂ with a narrow size distribution were synthesized by a co-sputtering technique. Structural, electrical and optical properties of Si QD/SiO₂ multilayer films with various boron (B) concentrations introduced during the sputtering process were studied. X-ray photoelectron spectroscopy (XPS) revealed B-B/B-Si bonding, which suggests possible boron inclusion in the nanocrystals. The addition of boron was observed to suppress Si crystallization, though the boron concentration was found to have little effect on the QD size. Reductions in film resistivity were observed with the increase in boron concentration, which is believed to be a consequence of an increase in carrier concentration. This is supported by a large decrease in the activation energy accompanying the drop in resistivity, consistent with the Fermi energy moving towards the valence bands. The photoluminescence (PL) intensity was found to decrease with increase in boron concentration.     

Colloidal quantum dot solar cells

In recent years colloidal quantum dots solar cells have been the subject of extensive research. A promising alternative to existing silicon solar cells, quantum dot solar cells are among the candidates for next generation photovoltaic devices. Colloidal quantum dots are attractive in photovoltaics research due to their solution processability which is useful for their integration into various solar cells. Here, we review the recent progresses in various quantum dot solar cells which are prepared from colloidal quantum dots. We discuss the preparation methods, working concepts, advantages and disadvantages of different device architectures. Major topics discussed in this review include integration of colloidal quantum dots in: Schottky solar cells, depleted heterojunction solar cells, extremely thin absorber solar cells, hybrid organic-inorganic solar cells, bulk heterojunction solar cells and quantum dot sensitized solar cells. The review is organized according to the working principle and the architecture of photovoltaic devices.     

Multi-stacked quantum dot solar cells fabricated by intermittent deposition of InGaAs

We report GaAs-based quantum dot (QD) solar cells fabricated by the intermittent deposition of InGaAs using molecular beam epitaxy. We obtained a highly stacked and well-aligned InGaAs QD structure of over 30 layers without using a strain compensation technique by the intermittent deposition of InGaAs layers. Moreover, there was no degradation in crystal quality. The external quantum efficiency of multi-stacked InGaAs QD solar cells extends the photo-absorption spectra toward a wavelength longer than the GaAs band gap, and the quantum efficiency increases as the number of stacking layers increases. The performance of the QD solar cells indicates that the novel InGaAs QDs facilitate the fabrication of highly stacked QD layers that are suitable for solar cell devices requiring thick QD layers for sufficient light absorption.     

Bow in screen-printed back-contact industrial silicon solar cells

In this paper, we present a model of the bow in thin back-contact silicon solar cells with screen-printed (SP) silver grid metallization. A modification of the bimetallic strip model is used to model the bow for the interdigitated back-contact, emitter-wrap-through (EWT) solar cell. It is proposed that the contact area fraction of the thick regions (>100 nm)of the binder glass at the Ag–Si contact interface responsible for metallization adhesion is an important parameter necessary for modeling the bow for SP back-contact solar cells with better accuracy. Techniques for reducing the bow are also proposed.     

Tunnel current through a miniband in InGaAs quantum dot superlattice solar cells

We report the tunnel current through a miniband in In_0.4Ga_0.6As quantum dot (QD) superlattice solar cells fabricated using molecular beam epitaxy. High-quality and well-aligned In_0.4Ga_0.6As QD superlattice structures with an interdot spacing of 3.5 nm were grown without using a strain balancing technique. 10-stack In_0.4Ga_0.6As QD superlattice solar cells had a high open circuit voltage and good cell characteristics even when the interdot spacing was reduced to 3.5 nm. Moreover, a short-circuit current density increases as the interdot spacing decreases. From the temperature dependence of the external quantum efficiency for QD solar cells with different interdot spacings, we observed the tunnel current through a miniband in QD superlattices with an interdot spacing of 3.5 nm.     

150-mm layer transfer for monocrystalline silicon solar cells

We report on recent improvements concerning the transfer of monocrystalline silicon layers to plastic substrates for flexible solar cell applications. Finite element numerical modeling of the etching current density distribution allows for optimizing our electrochemical etching setup for separation layer formation. By modifying the setup according to the simulation results, we are now able to transfer 25 μm thick monocrystalline silicon sheets with up to 150 mm in diameter.     

Fabrication of CdS quantum dot sensitized solar cells via a pressing route

CdS quantum dots have been self-assembled on the surface of dispersed nanocrystalline TiO₂ particles, and a light-harvesting electrode has been fabricated from the resulting sensitized P25 particles using the pressing route. The spectroscopic and photochemical properties of photosensitized nanocrystalline TiO₂ electrodes were studied. The results indicate that electrode preparation by the pressing route may lead to partial loss or damage of the CdS coating and creation of regions that are inaccessible to the redox electrolyte. Nevertheless, the pressing method using pre-coated powders shows promise as a low cost method for the preparation of photoelectrodes in sensitized-solar cells.     

Thin crystalline silicon solar cells

A 50 μm thin layer of high quality crystalline silicon together with efficient light trapping and well passivated surfaces is in principle all that is required to achieve stable solar cell efficiencies in the 20% range. In the present work, we propose to obtain these layers by directly cutting 50 μm thin wafers from an ingot with novel cutting techniques. This development is discussed in the frame of a defect tolerant mass production scenario and aims at obtaining twice the amount of wafers as compared to present wire/slurry technology. The ability to process such mechanically flexible wafers into solar cells with standard laboratory equipment is experimentally verified.     

Improving the optical efficiency and concentration of a single-plate quantum dot solar concentrator using near infra-red emitting quantum dots

Low luminescent quantum yields and large overlap between quantum dot (QD) emission and absorption spectra of present commercially-available visible-emitting QDs have led to low optical efficiencies for single-plate quantum dot solar concentrators (QDSCs). It is shown that using near infra-red (NIR) emitting QDs, re-absorption of QD emitted photons can be reduced greatly, thereby diminishing escape cone losses thus improving optical efficiencies and concentration ratios. Using Monte-Carlo ray-trace modelling, escape cone losses are quantified for different types of QD. A minimum 25% escape cone loss would be expected for a plate with refractive index of 1.5 containing QDs with no spectral overlap. It is shown that escape cone losses account for ∼57% of incident photons absorbed in QDSCs containing commercially-available visible-emitting QDs.     

Efficiency improved by acid texturization for multi-crystalline silicon solar cells

In this paper, we will show that efficiency of multi-crystalline silicon (mc-Si) solar cells may be improved by acid texturization. In order to enhance overall efficiency of mc-Si for solar-cell applications, the surface treatment of texturization with wet etching using appropriate solutions can improve incident light into the cell. Alkali etchant cannot produce uniformly textured surface to generate enough open circuit voltage (V_OC) and high efficiency of the mc-Si due to the unavoidable grain randomly oriented with higher steps formed during etching process. Optimized acid etching conditions can be obtained by decreasing the reflectance (R) for mc-Si substrate below levels generated by alkali etching. Short-circuit current (I_SC) measurements on acid textured cells reveal that current gain can be significantly enhanced by reducing reflection. The optimal acid etching ratio HF:HNO₃:H₂O = 15:1:2.5 with etching time of 60 s and lowering 42.7% of the R value can improve 112.4% of the conversion efficiency (η) of the developed solar cell. In order to obtain more detailed information of different defect region, high-resolution light beam induced current (LBIC) is applied to measure the internal quantum efficiency (IQE) and the lifetime of minority carriers. Thus, the acid texturing approach is instrumental to achieve high efficiency in mass production using relatively low-cost mc-Si as starting material with proper optimization of the fabrication steps.     

Multicrystalline silicon solar cells with porous silicon emitter

A review of the application of porous silicon (PS) in multicrystalline silicon solar cell processes is given. The different PS formation processes, structural and optical properties of PS are discussed from the viewpoint of photovoltaics. Special attention is given to the use of PS as an antireflection coating in simplified processing schemes and for simple selective emitter processes as well as to its light trapping and surface passivating capabilities. The optimization of a PS selective emitter formation results in a 14.1% efficiency mc-Si cell processed without texturization, surface passivation or additional ARC deposition. The implementation of a PS selective emitter into an industrially compatible screenprinted solar cell process is made by both the chemical and electrochemical method of PS formation. Different kinds of multicrystalline silicon materials and solar cell processes are used. An efficiency of 13.2% is achieved on a 25 cm² mc-Si solar cell using the electrochemical technique while the efficiencies in between 12% and 13% are reached for very large (100–164 cm²) commercial mc-Si cells with a PS emitter formed by chemical method.     

Modelling the quantum efficiency of cadmium telluride solar cells

A simple analytical model is presented describing the quantum efficiency of cadmium telluride (CdTe) solar cells. This model is based on a consistent set of parameters that were extracted from electrical and optical measurements. These measurements also reveal the CdTe solar cells to mainly rely on carrier generation as well as carrier collection within the space-charge region. Recombination in this part of the cell is hence taken into account. As a result, quantum efficiency spectra can be closely fitted by an expression that includes the lifetime of the minority carriers and the width of the space-charge region as free variables. The comparison of the calculated quantum efficiency curves with the experimental ones gives fundamental insight into the specific operation of CdTe solar cells.     

Design strategy and development of spherical silicon solar cell with semi-concentration reflector system

Structural and economical merits of a spherical silicon solar cell with semi-concentration reflector system have been discussed. The roles of the reflector system have been clarified; the reflector improves short-circuit current density and also open-circuit voltage by 4–6 times concentration to make a light irradiation area comparable to a p–n junction area. We have theoretically demonstrated that the spherical Si solar cell with semi-concentration reflector system can realize a performance comparable to that of conventional Si solar cells, with less amount of silicon material use.     

Rapid thermal technologies for high-efficiency silicon solar cells

This paper shows that rapidly formed emitters in less than 6 min in the hot zone of a conveyor belt furnace or in 3 min in an rapid thermal processing (RTP) system, in conjunction with a screen-printed (SP) RTP Al-BSF and passivating oxide formed simultaneously in 2 min can produce very simple high-efficiency n⁺-p-p⁺ cells with no surface texturing, point contacts, or selective emitter. It is shown for the first time that an 80 Ω/□ emitter and SP Al-back surface field (BSF) formed in a high throughput belt furnace produced 19% FZ cells and greater than 17% CZ cells with photolithography (PL) contacts. Using PL contacts, we also achieved 19% efficient cells on FZ, >18% on MCZ, and 17% boron-doped CZ by emitter and SP Al-BSF formation in <10 min in a single wafer RTP system. Finally, manufacturable cells with 45 Ω/□ emitter and SP Al-BSF and Ag contacts formed in the conveyor belt furnace gave 17% efficient cells on FZ silicon. Compared to the PL cells, the SP cell gave 2% lower efficiency along with a decrease in J_sc and fill factor. This loss in performance is attributed to a combination of the poor blue response, higher series resistance and higher contact shading in the SP devices     

Efficient polysulfide electrolyte for CdS quantum dot-sensitized solar cells

A polysulfide electrolyte considering simultaneously the penetration of the electrolyte in a mesoscopic TiO₂ film and the ion dissociation in the solution is developed for application in a CdS-sensitized solar cell (CdS-DSSC). A methanol/water (7:3 by volume) solution was found to be a good solvent for fitting the requirement mentioned above. The optimal composition of the electrolyte, based on the performance of the CdS-DSSCs, was found to contain 0.5 M Na₂S, 2 M S, and 0.2 M KCl. By using a photoelectrode prepared after 4 cycles of chemical bath deposition, FTO/TiO2/CdS-4, the efficiency of the CdS-DSSC obtained for this polysulfide electrolyte is 1.15% under the illumination of 100% sun (AM1.5, 100 mW cm⁻²). This efficiency is less than that obtained using I⁻/I₃⁻ redox couple (1.84%), mainly caused from the smaller values of fill factor and open circuit potential. However, the CdS sensitizer is stable and, furthermore, a much higher short circuit current and IPCE (80%) are obtained by using the polysulfide electrolyte.     

A simple fabrication process for 20% efficient silicon solar cells

Recently, a substantially simplified PERC silicon solar cell has been developed at ISFH with independently confirmed 1-sun efficiencies of up to 20.0%. This paper describes the details of the relatively simple cell fabrication process and experimentally characterizes the new cells. The simplified design involves reflection control by means of random pyramids, the direct evaporation of the front metal grid onto the random pyramids, elimination of the need for nontextured areas underneath the contact grid, and the use of a single phosphorous diffusion (1-step emitter).     

New Hamiltonian for a better understanding of the quantum dot intermediate band solar cells

The quantum dot intermediate band solar cell has the potential for very high conversion efficiency. However, the cells manufactured so far show efficiencies below the expectations mainly because the sub-bandgap photocurrent associated to the quantum dots is too low and because of a substantial reduction of the voltage. We present a new Hamiltonian for the use with the k·p method with low computing power demands. With it, we show here the fundamentals that explain the low light absorption coefficient and, consequently, the low photocurrent observed. We also prove that the bandgap of the host material, GaAs in our case, is reduced by the introduction of the quantum dots, which also explains the voltage reduction. The model is justified by the agreement with internal quantum efficiency measurements. It opens the path for improvement and suggests changes for increasing the photocurrent and for the compensation of the voltage reduction.     

The use of the self-calibration method for accurate determination of silicon solar cell internal quantum efficiency

The application of the self-calibration method as a means of increasing the accuracy of spectral response, SR, and internal quantum efficiency, Q(λ), measurements is discussed. The principle of the method is the precise calculation of Q(λ_m) of a test cell for light at λ_m≈0.8 μm, where the response is weakly dependent on the emitter and base parameters. The ratio of the calculated and measured Q(λ_m) values gives the corresponding factor for shifting the experimental spectral response curve. The sequence of calculations is described, and an algorithm of the necessary operations for a computer is developed. Several examples of the use of the self-calibration method for correction of SR measurements of solar cells with low shunt resistance demonstrate its very high effectiveness. The corrected Q(λ) values follow the respective actual data with very high accuracy even when the measured SR is decreased by factor 2–3 due to low shunt resistance of the solar cell.     

CdSe quantum dot-single wall carbon nanotube complexes for polymeric solar cells

The development of lightweight, flexible polymeric solar cells which utilize nanostructured materials has been investigated. Incorporation of quantum dots (QDs) and single wall carbon nanotubes (SWNTs) into a poly(3-octylthiophene)-(P3OT) composite, has been shown to facilitate exciton dissociation and carrier transport in a properly structured device. Optimization towards an ideal electron acceptor for polymeric solar cells that exhibits high electron affinity and high electrical conductivity has been proposed in the form of QD-SWNT complexes. Specifically, the synthesis of CdSe-aminoethanethiol-SWNT complexes has been performed, with confirmation by microscopy (SEM, TEM, and AFM) and spectroscopy (FT-IR and optical absorption). Polymer composites containing these complexes in P3OT have been used to fabricate solar cells which show limited efficiency due to recombination and surface effects, but an open-circuit voltage (V_OC) of 0.75 V. However, evaluation of the optical absorption spectra for these nanomaterial-polymeric composites has shown a marked enhancement in the ability to capture the available irradiance of the air mass zero (AM0) spectrum.     

Self-Passivating hybrid (organic/inorganic) tandem solar cell

A tandem photovoltaic device structure, consisting of a PbSe nanocrystal film and a P3HT/PCBM bulk heterojunction film, was fabricated. The PbSe film (top layer) serves as a photocurrent generator as well as a UV protector for the underlying polymer cell. The P3HT/PCBM photovoltaic cell (bottom layer) provides the necessary electric field to the top photoconducting layer to extract the photogenerated charge from that layer. The charge extraction from the PbSe layer is demonstrated by using light-biased spectral response measurements. In addition, device lifetime measurements were performed under AM 1.5 and UV-enhanced illumination on the tandem cell and on a control P3HT/PCBM device. These measurements demonstrated that the hybrid tandem cell is significantly more durable due to the preferential UV absorption in the upper inorganic PbSe nanocrystal film.