Anisotropic Electrical Transport in MgB2 Single Crystals

We report on study of transport properties of MgB₂ single crystals. The normal state resistivity has been found to be anisotropic with resistivity ratio _c / _ab =3.5. In agreement with the results of band structure calculations the normal state Hall effect measurements with H//ab-planes and H//c-axis show two type carrier behavior. Below T _c, the in-plane as well as the out-of-plane Hall resistivity, _xy and _zx , display no sign change anomaly. Furthermore, both _xy and _zx have been found to scale with corresponding longitudinal resistivity with the same exponent =1.5.     

Energy Scales in the High-Tc Superconductor YBa2Cu3O6+x

The optical conductivity sum rule is used to examine the evolution of the spectral weight N() in both the normal and superconducting states of optimally and underdoped YBa₂Cu₃O_6+x along the a axis. Differences in N() above and below T _c allow the strength of the superconducting condensate _s to be determined. In the optimally-doped material, _s is fully formed at energies comparable to the full superconducting gap maximum (0.1 eV), while in the underdoped material the energy scale for convergence is considerably higher (0.6 eV). This difference is discussed in terms of normal-state properties.     

Equation of state of3He near its liquid-vapor critical point

We report high-resolution measurements of the pressure coefficient (P/T) for³He in both the one-phase and two-phase regions close to the critical point. These include data on 40 isochores over the intervals–0.1t+0.1 and–0.2+0.2, wheret=(T–T _c )/T _c and =(– _c )/ _c . We have determined the discontinuity (P/T) of (P/T) between the one-phase and the two-phase regions along the coexistence curve as a function of . The asymptotic behavior of (1/) (P/T) versus near the critical point gives a power law with an exponent (+–1)^–1=1.39±0.02 for0.010.2 or–1×10 ^–2t–10 ^–6 , from which we deduce =1.14±0.01, using =0.361 determined from the shape of the coexistence curve. An analysis of the discontinuity (P/T) with a correction-to-scaling term gives =1.17±0.02. The quoted errors are fromstatistics alone. Furthermore, we combine our data with heat capacity results by Brown and Meyer to calculate (/T) _c as a function oft. In the two-phase region the slope (²/T ²)_c is different from that in the one-phase region. These findings are discussed in the light of the predictions from simple scaling and more refined theories and model calculations. For the isochores 0 we form a scaling plot to test whether the data follow simple scaling, which assumes antisymmetry of – ( _c ,t) as a function of on both sides of the critical isochore. We find that indeed this plot shows that the assumption of simple scaling holds reasonably well for our data over the ranget0.1. A fit of our data to the linear model approximation is obtained for0.10 andt0.02, giving a value of =1.16±0.02. Beyond this range, deviations between the fit and the data are greater than the experimental scatter. Finally we discuss the (P/T) data analysis for ⁴ He by Kierstead. A power law plot of (1/) P/T) versus belowT _c leads to =1.13±0.10. An analysis with a correction-to-scaling term gives =1.06±0.02. In contrast to ³ He, the slopes (²/T ²)_c above and belowT _c are only marginally different.Work supported by a grant from the National Science Foundation.     

Behaviour of amorphous poly(ethylene terephthalate) annealed at T<T g by thermally stimulated currents

Thermally stimulated current (TSC) discharges in open circuit of amorphous poly(ethylene terephthalate) (PET) corona-charged electrets show a heteropolar relaxation at 87 °C, ₁ between and peaks. This relaxation tends to become homopolar when the sample is annealed at temperatures below the glass transition temperature. This is due to the formation of a trapped charge density on the surface of the material that originates, during the TSC discharge, a current that counteracts the one that results in ₁ This trapping effect, which initially is null, increases with annealing due to the rise in resistivity. On the other hand, TSC discharges in short-circuited annealed samples result in a heteropolar peak, ^*, that corresponds to ₁ The area of ^* increases with the annealing time in a bounded way. This peak is related to the formation of thermal nuclei (embryos) in the bulk of the material that act as heterogeneities. This suggests that ₁ is associated with a barrier-type polarization. If the annealed sample is heated to temperatures above the glass transition temperature, the tendency to the inversion of ₁ vanishes and ^* disappears, whereas and are modified. This suggests that relaxation is related to a Maxwell-Wagner-Sillars effect.     

Velocity of second sound and superfluid density near the superfluid transition in3He-4He mixtures

Using superleak condenser transducers, the velocity of second soundU ₂ has been measured near the superfluid transition temperature T in³He-⁴He mixtures with molar concentrationsX of³He of 0.0, 0.038, 0.122, 0.297, and 0.440. We have obtained the superfluid density _s/ fromU ₂ on the basis of linearized two-fluid hydrodynamics. The results for _s/ are consistent with those obtained from the oscillating disk method, as expected from two-fluid hydrodynamics. The value of _s/ at eachX could be expressed by a single power law, _s/=k, where =1-T/R, with the experimental uncertainty. It is found that the exponent is independent of concentration forX0.44 within the experimental uncertainty. This concentration independence of is in agreement with the universality concept. From the conclusion that the values of are universal forX0.44, the concentration dependence of the superfluid component _s is expressed by an empirical equation _s(X, )=²_s(0, ). It is found that corresponds to the volume fraction of⁴He in the superfluid³He-⁴He mixture. The value of is in agreement with that obtained from the measurement of the molar volume by others.This paper is based on a thesis submitted to Tokyo University of Education in partial fulfillment of the requirements for the Ph.D. degree.     

Effective Interaction and Superfluidity in Two-dimensional Liquid 3He

Effective interaction of two-dimensional liquid ³He is studied with the (selfconsistent) reaction matrix theory. The theory is found to be valid in the dilute region, _2D 0.02 Å^–2, where _2D is the areal density. In the region, the attractive interaction in the p-wave channel is the most dominant, and the system is expected to undergo a transition to a p-wave superfluid state, except for the dilue limit. The transition temperature is estimated to be of the order of mK in the clean limit. In the dilute limit, _2D 0.002 Å^–2, an s-wave superfluid state becomes more stable than a p-wave one, but the transition temperature is found to be of the order of 0.1 mK at most. Furthermore, in the reaction matrix theory, it is found that a d-wave superfluid state becomes more stable than a p-wave one at _2D 0.035 Å^–2.     

Thermal conductivity of methane

This paper reports thermal conductivity data for methane measured in the temperature range 120–400 K and pressure range 25–700 bar with a maximum uncertainty of ± 1%. A simple correlation of these data accurate to within about 3% is obtained and used to prepare a table of recommended values.Nomenclature a _k ,b _ij ,b _k Parameters of the regression model, k= 0 to n; i =0 to m; j =0 to n - P Pressure (MPa or bar) - Q _kl Heat flux per unit length (mW · m^–1) - t time (s) - T Temperature (K) - T _cr Critical temperature (K) - T _r reduced temperature (= T/T _cr) - T _w Temperature rise of wire between times t ₁ and t ₂ (deg K) - T ^* Reduced temperature difference (TT _cr)/T _cr - Thermal conductivity (mW · m^–1 · K^–1) - ₁ Thermal conductivity at 1 bar (mW · m^–1 · K^–1) - _bg Background thermal conductivity (mW · m^–1 · K^–1) - _cr Anomalous thermal conductivity (mW · m^–1 · K^–1) - _e Excess thermal conductivity (mW · m^–1 · K^–1) - Density (g · cm^–3) - _cr Critical density (g · cm^–3) - _r Reduced density (= / _cr) - ^* Reduced density difference (– _cr )/ _cr      

The crystal growth and thermoelectric properties of chromium disilicide

Single crystals of chromium disilicide about 8 mm in diameter and 35 mm long were grown using the floating zone technique. Measurements of electrical resistivity , Hall coefficient R and thermoelectric power were carried out in the temperature range from 85 to 1100 K. The values of and showed the anisotropy over the temperature range studied. The ratios parallel and perpendicular to the c-axis were / =1.9 and /=1.7 respectively, at room temperature. It was found to be a degenerate semiconductor having the hole concentration of 6.3×10²⁰ cm^–3 below 600 K. The effective masses of holes parallel and perpendicular to the c-axis determined from the thermoelectric power and the hole concentration near room temperature were estimated to be five and three times as large as a free electron mass, respectively. The calculation on the values of and was made using those effective masses. These values showed good agreement with the observed values in the temperature range from 150 to 1100 K.     

A modified Weibull treatment for the analysis of strength-test data from non-identical brittle specimens

Powder compacts (e.g., pharmaceutical tablets) manufactured on commerically available machines are not strictly identical but show inevitable variability in their weights, thicknesses and compaction pressures. Consequently, the variability in fracture-stress data obtained from such brittle specimens is greater than that due to the inherent strength variability of the material itself. A modified Weibull analysis has been developed so that a more accurate estimate of the inherent variability of the mechanical strength of the material can be derived from test data obtained from commercially produced compacts; its application is illustrated.Nomenclature D diameter - f() relative frequency of occurrence of specimens with density and volume - F minimization function - i ascending rank number of a fracture stress - m Weibull modulus - N _tot number of specimens in a batch - N() number of specimens with densities in the range to + d and volumes in the range to + d - P _f failure probability - p _u upper punch compaction pressure - t thickness - volume - w weight - W _f fracture load - density - _f fracture stress - ¯ _f mean fracture stress of a batch - ¯ _f() mean fracture stress of specimens with density and volume - ₀ scale parameter or normalizing factor - _u location parameter or threshold stress     

Observation of Hall Scaling in MgB2 Thin Films

We have measured the Hall resistivity, _xy , and the longitudinal resistivity, _xx , in superconducting MgB₂ thin films in a mixed-state while changing the magnetic field and the current density. A Hall scaling behavior without the anomalous Hall effect was observed with a exponent of 2.0±0.1 in _xy =A _xx . This exponent is observed to be constant, i.e., independent of magnetic field, temperature, and current density.     

Varistor characteristics in PTCR-type (Ba,Sr)TiO3 ceramics prepared by single-step firing in air

This paper deals with donor, acceptor-codoped (Ba_0.4Sr_.6)TiO₃ ceramics with distinct varistor characteristics at room temperature, which were prepared by single-step firing in air. The materials, with the Curie point at around –90 °C, exhibited a large PTCR (positive temperature coefficient of resistivity) effect of more than seven orders of magnitude in the temperature range –90 °C (the resistivity 10³ · cm) to room temperature ( > 10¹⁰ · cm). An apparent dielectric constant of >20000 and tan < 0.05 (at 100 kHz) were observed for the present materials at room temperature, and moreover, the materials exhibited nonlinear current-voltage characteristics with the nonlinear coefficient, , in the range 7–12 and the varistor field, E_v, in the range 0.3–1.0 kV/cm. The value of in the present materials increased systematically with increasing in their PTCR temperature range. It has been found that there exists a close correlation between and the grain-boundary potential barrier height, e, obtained from the -T characteristic of the materials. An almost linear relationship was also found to exist between and log E_v for the present materials.     

Flux flow resistivity and upper critical field in ideal type II amorphous superconductors

Flux flow resistivity _f and upper critical fieldH _c2 of ideal type II amorphous bulk supercbnductors Zr₃Ni and Zr₃Rh on both as-quenched and thermally relaxed states have been studied. It is found that thermal annealing does not change the temperature dependence ofH _c2 in homogeneous superconductors. The temperature and field dependence of _f in all samples studied exhibits a universal scaling relation of the form _f / _n =f(h, t), where _n is the normal state resistivity, andh andt are the reduced field and reduced temperature, respectively. The results are compared with predictions of the time-dependent microscopic theories for bulk superconductors in the dirty limit. In the low-field region (HH _c2 ) the viscosity coefficient contains both the ordinary (Bardeen-Stephen, Tinkham) and anomalous (Gor'kov-Kopnin) terms. ForHH _c2 the results agree qualitatively with the theory of Imai with pair-breaking in the anomalous term. Implications of the present results are discussed.This work is sponsored by the National Science Foundation under Grant DMR-82-02624.     

Effect of Nuclear Field on Magnetotransport Quantum Oscillations in InSb1

In combining magneto-transport investigations with NMR (nuclear magnetic resonance) we measured the effect of the nuclear hyperfine field B_HF on quantum oscillations in the transverse magneto-resistivity _xx and in the Hall resistivity _xy of metallically doped n-InSb. Quantitative analysis of the B_HF-induced change in _xx demonstrates that this experiment allows to separate spin splitting phenomena in magneto-transport from effects due to the external magnetic field B. This is used to show that an oscillatory structure in R_H=_xy/B is directly related to a redistribution in the occupation of the two spin states in the lowest Landau level.     

Universality and the scaling laws in the superfluid phase transition of3He-4He mixtures

From the second-sound velocityU ₂ near the superfluid transition point, the superfluid densities in³He-⁴He mixtures, _s (X) and _s (), were deduced along the paths of constant³He concentrationX and of constant chemical potential difference of³He and⁴He. The following critical exponents of _s are determined: (a) =XX for _s (X) in the(X, T) plane,(b) X for _s (X) in the(, T) plane, and(c) for _s () in the(, T) plane. It is found that and _X change by about 4–6% relative to with increasing³He concentration up toX=0.4 and by 8–10% up toX=0.53. It seems that, belowX=0.53, universality hold for . Values of have been found to be in good agreement with the critical exponent of _s in pure⁴He under constant pressure. The values of and _X forX0.53 are also found to be consistent with the scaling relations in the (,T) plane of³He-⁴He mixture.Work performed in part while at the Electrotechnical Laboratory.     

Hall-Effect in LuNi2B2C and YNi2B2C Borocarbides in Normal and Superconducting Mixed States

It was shown that the Hall resistivity _xy for LuNi ₂ B ₂ C and YNi ₂ B ₂ C is negative in the normal and mixed states and has no sign reversal below T _c . In the mixed state the scaling relation _{xy xx} (_xx is the longitudinal resistivity) was found for both compounds with 2.0. In the normal state a distinct nonlinearity in the _xy(H) dependence, accompanied by a large magnetoresistance, was found below 40 K only for LuNi ₂ B ₂ C. The difference in the behaviour of Lu- and Y-based borocarbides seems to be connected with the difference in the Fermi surfaces of these compounds.     

Underpinning of a simple blunt flaw fracture initiation relation

With the cohesive process zone representation of the micro-mechanistic processes that are associated with fracture as a basis, the author is involved in a wide-ranging research programme, the objective being to extend the fracture mechanics methodology for sharp cracks to blunt flaws, so as to take credit for the blunt flaw geometry. In earlier work, a Mode I fracture initiation relation has been derived, subject to the restriction that the process zone size s is small compared with the flaw depth (length) and any characteristic dimension other than the flaw root radius . The relation gives the critical elastic flaw-tip peak stress _pcr, and has been derived using a two-extremes procedure, whereby the separate, and indeed exact, solutions for small and large s/ values are blended together to give an all-embracing relation that is valid for all s/ values. _pcr is expressed in terms of the process zone material parameters and geometrical parameters but, for a wide range of flaw geometry parameters, _pcr essentially depends on only one geometrical parameter . This paper provides underpinning for the general thrust of the two-extremes procedure by appealing to exact results for the complete spectrum of s/ values from analyses of appropriate Mode III models. Results obtained by applying the two-extremes procedure are shown to be in very good agreement with the exact results.     

Temperature dependence of resistivity for thermally diffused V3Si multilayer films

Results concerning V₃Si films produced by a simple annealed multilayer technique are reported together with X-ray diffraction patterns, Auger spectroscopy, and Rutherford backscattering analysis. Low-temperature electrical resistivity measurements are discussed. It is found that the V₃Si films exhibit aT ² dependence in the temperature rangeT _c T23 K and aT ^2.6 dependence in the rangeT _c T40 K. The normal-state resistivity in the whole temperature range (T _c T600 K) is analyzed in the framework of Cote-Meisel theory. Consistent values of the saturation resistivity _m and of the Debye temperature are obtained by fitting the experimental data with the Cote-Meisel expression for (T).     

Hc2 of MgCNi3 Determined from the Specific Heat and Resistivity Measurements

H _c2 of MgCNi₃ has been determined from the specific heat C and resistivity measurements in the same sample. The results from are nearly identical with those determined from the anomaly in C. Furthermore, utilizing the relation (H) H and the value of d/dH, the obtained value of H _c2 is the same as that by the WHH model, if the spin paramagnetic effect and the spin–orbit interaction are taken into account. The results of this comparison have strong implications on the order parameter of MgCNi₃.     

Temperature dependence of electrical resistivity of deformed and undeformed V-rich V3Si single crystals

The electrical resistivity (T) of V-rich V₃Si single crystals (T _c-11.4 K) was measured from 4.2 to 300 K along the directions of [1 0 0] and [1 1 1] before and after plastic deformation at 1573 K. Anisotropy of (T) was observed although V₃Si has the cubic A15 structure. Plastic deformation does not affect the normal-state (T) behaviour but changes the normal-superconducting transition width T_c. At low temperatures (T _c<T 40 K), (T) varies approximately as T ⁿ where n-2.5 and this behaviour does not contradict the (0)- phase-diagram plot proposed by Gurvitch, where is the electron-phonon coupling constant and (0) is the residual resistivity.