图形点阵液晶显示MGLS24064与控制器T6963C的接口及应用

介绍了Ｔ６９６３液晶显示控制器与ＭＧＬＳ－２４０６４的接口电路,讲述了整个模块的原理及其具体应用,并针对一个具体设计的电路说明了其具体用法。     

基于HT47R20的测温仪表软件设计方法

本文介绍了基于HT47R20单片机的测温仪表软件的设计方法，着重讨论了线性化分段，表格形成，和快速查表等问题。     

液晶显示模块电磁干扰的防护

液晶显示模块是由ITO玻璃、液晶驱动芯片、背光模块与软性印刷电路板所组成,基于这种设计架构,当处理器通过输入/输出传输接口传送大量显示数据至液晶驱动芯片的过程中,会产生相当程度的电磁波,并通过模块上的软性印刷电路板（FPC）发散出来,进而影响电子产品内部的组件效能,因此文中将针对电磁干扰的问题说明一些防护的方法。     

LCD驱动器SD0432与嵌入式系统的接口设计

集成LCD显示驱动器SD0432是深圳兴威帆电子有限公司生产的低工作电压串行接口芯片，它内部具有看门狗(WDT)及语音输出电路。文中介绍了SD0432的工作特性及工作原理，给出了SD0432与8051嵌入式微处理器的接口电路及部分程序代码。     

基于DSP芯片VC33的液晶显示的设计和实现

本文介绍了点阵液晶显示模块MF50174的外置控制器SED1335与VC33系列DSP的硬件接口电路,以及通过该电路驱动点阵液晶模块来实现字符、汉字和图形显示的软件设计。本设计中,采用图形点阵式液晶显示模块,硬件结构简单,软件易于维护,扩展性强,可以得到友好的人机界面,所以在性能方面优于其它同类型的控制器,非常适用于各种便携式系统的设计。     

液晶模块与MSP430F系单片机接口电路及编程

介绍了液晶显示模块的引脚功能,说明了液晶模块主控芯片SPLC501,给出了MSP430F149低功耗单片机与液晶模块接口电路原理图,液晶程序的时序图及液晶显示子程序。     

光电线缆用复合金属带工艺因素探讨

通过对乙烯／丙烯酸共聚物（EAA），乙烯／甲基丙烯酸共聚物（EMAA）单层或多层薄膜复合金属带（Zetabon)的结构、性能、质量要点及生产工艺因素的探讨，阐述了目前光电通信用复合金属带的质量控制。     

A dry-patterned Cu(Mg) alloy film as a gate electrode in a thin-film transistor liquid crystal display

The annealing of a Cu(4.5at.%Mg)/SiO₂/Si structure in ambient O₂ at 10 mtorr and 300–500°C allows for the out-diffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned and successfully served as a hard mask for the subsequent dry etching of the underlying Mg-depleted Cu films using an O₂ plasma and hexafluoroacetylacetone (H(hfac)) chemistry. The resultant MgO/Cu structure, with a taper slope of about 30°, shows the feasibility of dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.%Mg) gate a-Si:H thin-film transistor (TFT) has a field-effect mobility of 0.86 cm²/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films that eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.     

一种減少TFT显示板上闸驱动器输出电晶体应力效应的设计

为了降低 TFT-LCD 闸驱动电路中电晶体因畏期承受高的闸电压应力造成門限(Threshold)电压之劣化现象,本研究中探用双下拉结构与放电路径方式设计了一个高可靠性的 TFT-LCD 面板整合(On-panel)闸驱动电路.其中,交互道通的双下拉结构减少下拉电晶体的承力晴同;放电路径则将输出驱动电晶体高的闸极电压及時洩放.所提结构由台积电(TSMC)0.35 μm CMOS 制程技术制作之评估晶片经测试显示,门限电压的偏移量减少了近 45%,改善效果极为显著.应用到α-SiTFT-LCD 面板整合闸驱动器上,其成效当可预期.     

A theoretical study of phosphorescent Cu(I) complexes with 2-(2'quinolyl)imidazole and POP mixed ligands

We herein report a theoretical study using density functional theory (DFT) and time-dependent DFT (TD-DFT) methods to investigate Cu(I) complexes with 2-(2′-pyridyl/quinolyl)imidazole and bis[2-(diphenylphosphino)phenyl]ether mixed ligands. Based on the experimental data for complexes 1 and 2, we first benchmarked different functionals with different HF% and found B3PW91 to be the optimal functional for this system. The computational results indicate that complex 1, with a pyridyl unit, has a much larger radiative decay rate (k_r) than complex 2, which has a quinolyl unit. This difference is presumably due to higher HOMO electronic distribution in the d_x²-_y² orbital, which leads to a markedly shortened CuN₂ bond, enhancing the metal-ligand interaction. However, a much smaller experimental value was found for the non-radiative decay rate (k_nr) in complex 2, rendering 1 a slightly weaker emitter than 2. We conclude that the difference is due to more effective suppression of deformation when the quinolyl unit is used instead of pyridyl. We sought to increase the photoluminescence quantum yield (PLQY) through modifying the ligand on complex 2, with the goal being to keep the small k_nr value while simultaneously increasing k_r. The computational results indicate that our designed complexes 2a-2c, which possess modified ligands with electron-donating or withdrawing alkyl substituents on N₃, increased the distributions of d_x²-_y² and decreased that of the d_yz compared to 2. Their coordinating abilities were therefore enhanced, with the k_r values being 1.34, 22.70, and 0.16 times that of 2 for 2a, 2b and 2c, respectively. Higher PLQYs were achieved in 2a and 2b with the addition of electron-donating alkyl substituents on the ligands, which yielded complexes with significantly shortened CuN₂ bonds and enhanced metal-ligand interaction. This investigation on the microscopic mechanism of the photoluminescent properties of these complexes can provide useful knowledge for experimentalists.     

The effect of Zn1‐xMgxO buffer layer deposition temperature on Cu(In,Ga)Se2 solar cells: A study of the buffer/absorber interface

The effect of atomic layer deposition temperature of Zn_1‐xMg_xO buffer layers for Cu(In,Ga)Se₂ (CIGS) based solar cell devices is evaluated. The Zn_1‐xMg_xO films are grown using diethyl zinc, bis‐cyclopentadienyl magnesium and water as precursors in a temperature range of 105 to 180°C. High efficiency devices are produced in the region from 105 up to 135°C. At a Zn_1‐xMg_xO deposition temperature of 120°C, a maximum cell efficiency of 15·5% is reached by using a Zn_1‐xMg_xO layer with an x‐value of 0·2 and a thickness of 140 nm. A significant drop in cell efficiency due to large losses in open circuit voltage and fill factor is observed for devices grown at temperatures above 150°C. No differences in chemical composition, structure and morphology of the samples are observed, except for the samples prepared at 105 and 120°C that show elemental selenium present at the buffer/absorber interface. The selenium at the interface does not lead to major degradation of the solar cell device efficiency. Instead, a decrease in Zn_1‐xMg_xO resistivity by more than one order of magnitude at growth temperatures above 150°C may explain the degradation in solar cell performance. From energy filtered transmission electron microscopy, the width of the CIGS/Zn_1‐xMg_xO chemical interface is found to be thinner than 10 nm without any areas of depletion for Cu, Se, Zn and O. Copyright © 2008 John Wiley & Sons, Ltd.     

A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes

We have fabricated Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes (SBDs) to investigate the effect of organic interfacial layer on the main electrical characteristics. Zn doped poly(vinyl alcohol) (PVA:Zn) was successfully deposited on n-Si substrate by using the electrospinning system and surface morphology of PVA:Zn was presented by SEM images. The current–voltage (I–V) characteristics of these SBDs have been investigated at room temperature. The experimental results show that interfacial layer enhances the device performance in terms of ideality factor (n), zero-bias barrier height (Φ_B0), series resistance (R_s), and shunt resistance (R_sh) with values of 1.38, 0.75 eV, 97.64 Ω, and 203 MΩ whereas those of Au/n-Si SBD are found as 1.65, 0.62 eV, 164.15 Ω and 0.597 MΩ, respectively. Also, this interfacial layer at metal/semiconductor (M/S) interface leads to a decrease in the magnitude of leakage current and density of interface states (N_ss). The values of N_ss range from 1.36×10¹² at E_c—0.569 eV to 1.35×10¹³ eV^?1 cm^?2 at E_c—0.387 eV for Au/PVA:Zn/n-Si SBD and 3.34×10¹² at E_c—0.560 eV to 1.35×10¹³ eV^?1 cm^?2 at E_c—0.424 eV for Au/n-Si SBD. The analysis of experimental results reveals that the existence of PVA:Zn interfacial layer improves the performance of such devices.     

A straightforward method to extract the shunt resistance of photovoltaic cells from current-voltage characteristics of mounted arrays

A straightforward non-invasive method is proposed to accurately evaluate the shunt resistance of an elementary cell of a photovoltaic module connected in an installed string without requiring prior knowledge of the parameters of the intrinsic diodes. The approach relies on the measurement of the current-voltage characteristic of the whole string after intentionally shading the selected cell. Calibrated PSPICE simulations are employed to illustrate the method and test its reliability. As a case study, the shunt resistances of several cells belonging to a series array of 10 commercial panels are determined.     

A comparative study of Cd‐ and Zn‐compound buffer layers on Cu(In1−x,Gax)(Sy,Se1−y)2 thin film solar cells

This paper reports a comparative study of Cu(In,Ga)(S,Se)₂ (CIGSSe) thin‐film solar cells with CBD‐CdS, CBD‐ZnS(O,OH) and ALD‐Zn(O,S) buffer layers. Each buffer layer was deposited on CIGSSe absorber layers which were prepared by sulfurization after selenization (SAS) process by Solar Frontier K. K. Cell efficiencies of CBD‐CdS/CIGSSe, CBD‐ZnS(O,OH)/CIGSSe and ALD‐Zn(O,S)/CIGSSe solar cells exceeded 18%, for a cell area of 0.5 cm². The solar cells underwent a heat‐light soaking (HLS) post‐treatment at 170 °C under one‐sun illumination in the air; among the three condtions, the ALD‐Zn(O,S)/CIGSSe solar cells showed the highest cell efficiency of 19.78% with the highest open‐circuit voltage of 0.718 V. Admittance spectroscopy measurements showed a shift of the N₁ defect's energy position toward shallower energy positions for ALD‐Zn(O,S)/CIGSSe solar cells after HLS post‐treatment, which is in good agreement with their higher open‐circuit voltage and smaller interface recombination than that of CBD‐ZnS(O,OH)/CIGSSe solar cells. Copyright © 2015 John Wiley & Sons, Ltd.