Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target

Using a Zn₃In₂O₆ target, indium-zinc oxide films were prepared by pulsed laser deposition. The influence of the substrate deposition temperature and the oxygen pressure on the structure, optical and electrical properties were studied. Crystalline films are obtained for substrate temperatures above 200°C. At the optimum substrate deposition temperature of 500°C and the optimum oxygen pressure of 10⁻³ mbar, both conditions that indeed lead to the highest conductivity, Zn₃In₂O₆ films exhibit a transparency of 85% in the visible region and a conductivity of 1000 S/cm. Depositions carried out in oxygen and reducing gas, 93% Ar/7% H₂, result in large discrepancies between the target stoichiometry and the film composition. The Zn/In (at.%) ratio of 1.5 is only preserved for oxygen pressures of 10⁻²–10⁻³ mbar and a 93% Ar/7% H₂ pressure of 10⁻² mbar. The optical properties are basically not affected by the type of atmosphere used during the film deposition, unlike the conductivity which significantly increases from 80 to 1400 S/cm for a film deposited in 10⁻² mbar of O₂ and in 93% Ar/7% H₂, respectively.     

Structure and conducting properties of La0.5Sr0.5CoO3−δ films on YSZ

La_0.5Sr_0.5CoO_3−δ (LSCO) thin films were deposited on yttria stabilized zirconia (YSZ) substrates by pulsed laser deposition (PLD) for application to thin film solid oxide fuel cell electrodes. During the deposition, the substrate temperature was varied from 450 to 750°C, and the oxygen pressure in the chamber was varied from 80 to 310 mTorr. Films deposited at 650°C and an oxygen background pressure of 150 mTorr were mostly (100) oriented. Deposition at higher temperatures or under lower oxygen pressures lead to mostly (110) oriented films. Films with low electrical resistivity of 10⁻³ Ω·cm were obtained.     

Effects of Intense Ultrasound Treatment of C60 Solutions

C₆₀ was treated at room temperature, in air with intense ultrasound in the following solvents; decalin, tetralin. cyclohexane and CCl₄. It is shown by UV-VIS and FT-IR spectroscopy that in decalin and in tetralin the dominant reaction seems to be a sono-oxidation, although more complex reactions involving the solvent take place. In CC1₄ sono-oxidation is accompanied by an extensive sono-polymerization. Products in CCl₄ are C₆₀O, C₆₀O₂ and others; the sonopolymer collected from sonicated CCl₄ was easily identified by FT-IR spectroscopy. Sonopolymerization occurs also in decalin and tetralin and is promoted by free radicals as in the case of CCl₄. No reactions are observed in cyclohexane due to the very low solubility of C₆₀ in this solvent and the poor cavitation ability of cyclohexane under the action of ultrasound.     

Sintering,thermal stability and mechanical properties of ZrO2-WC composites obtained by pulsed electric current sintering

ZrO₂-WC composites exhibit comparable mechanical properties as traditional WC-Co materials, which provides an opportunity to partially replace WC-Co for some applications. In this study, 2 mol.% Y₂O₃ stabilized ZrO₂ composites with 40 vol.% WC were consolidated in the 1150°C–1850°C range under a pressure of 60 MPa by pulsed electric current sintering (PECS). The densification behavior, microstructure and phase constitution of the composites were investigated to clarify the role of the sintering temperature on the grain growth, mechanical properties and thermal stability of ZrO₂ and WC components. Analysis results indicated that the composites sintered at 1350°C and 1450°C exhibited the highest tetragonal ZrO₂ phase transformability, maximum toughness, and hardness and an optimal flexural strength. Chemical reaction of ZrO₂ and C, originating from the graphite die, was detected in the composite PECS for 20 min at 1850°C in vacuum.     

Chemical vapour deposition of praseodymium oxide films on silicon: influence of temperature and oxygen pressure

Metal-organic chemical vapour deposition (MOCVD) of various phases in PrO_x system has been studied in relation with deposition temperature (450–750 °C) and oxygen partial pressure (0.027–100 Pa or 0.2–750 mTorr). Depositions were carried out by pulsed liquid injection MOCVD using Pr(thd)₃ (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) precursor dissolved in toluene or monoglyme. By varying deposition temperature and oxygen partial pressure amorphous films or various crystalline PrO_x phases (Pr₂O₃, Pr₇O₁₂, Pr₆O₁₁) and their mixtures can be grown. The pure crystalline Pr₂O₃ phase grows only in a narrow range of partial oxygen pressure and temperature, while high oxygen pressure (40–100 Pa) always leads to the most stable Pr₆O₁₁ phase. The influence of annealing under vacuum at 750 °C on film phase composition was also studied. Near 90% step coverage conformity was achieved for PrO_x films on structured silicon substrates with aspect ratio 1:10. In air degradation of Pr₂O₃ films with transformation to Pr(OH)₃ was observed in contrast to Pr₆O₁₁ films.     

Experimental Evaluation of a Thermopile Detector With SU-8 Membrane in a Carbon Dioxide Meter Setup

Continuous control of the carbon dioxide levels in the ventilation systems in office buildings and public schools has been shown to increase productivity and save money. However, these measurement systems require further developments in order to be more cost effective. This paper presents an evaluation of an Al/Bi thermopile detector with a 4 mum thin SiO₂/SU-8 membrane in a CO₂ meter application using the nondispersive infrared technology (NDIR). The system consists of an 11 cm aluminum tube, used as the sample chamber and in which a light source and a thermopile detector with a 4.26 mum optical bandpass filter are positioned on its opposite sides. The light source is pulsed with a frequency of 0.5 Hz. The voltage response of the Al/Bi thermopile is measured for different CO₂ concentrations, and, as expected according to the Lambert-Beer law, there is an exponential decrease in the measured intensity. The absolute response is about 50% lower than for a commercial HMS J21 thermopile from Heimann Sensor GmbH. In relative terms, on the other hand, the Al/Bi thermopile is more sensitive for changes in the CO₂ concentration. At 7500 ppm, the voltage response has decreased to 40% of the reference response measured in the nitrogen atmosphere.     

稀土氧化物对SPS烧结AlN陶瓷电性能的影响

以AlN粉末为原料, 添加稀土氧化物(Sm₂O₃、Y₂O₃), 在氮气气氛下, 采用SPS烧结方法制备AlN陶瓷, 研究稀土氧化物的掺杂对AlN烧结试样相组成、微观结构和电性能的影响。实验表明: Sm₂O₃、Y₂O₃与Al₂O₃反应生成的液相稀土金属铝酸盐会提高AlN陶瓷致密度, 且在晶界处形成导电通路降低了AlN陶瓷电阻率。随着Sm₂O₃掺杂量的增加, 晶界相逐渐由Sm₄Al₂O₉过渡到SmAlO₃, 且Sm₄Al₂O₉对电阻率贡献最大。其中, 3wt% Sm₂O₃掺杂AlN陶瓷电阻率最低, 为      

Highly conducting indium tin oxide (ITO) thin films deposited by pulsed laser ablation

Highly conducting and transparent indium tin oxide (ITO) thin films were prepared on SiO₂ glass and silicon substrates by pulsed laser ablation (PLA) from a 90 wt.% In₂O₃-10 wt.% SnO₂ sintered ceramic target. The growths of ITO films under different oxygen pressures (P_O2) ranging from 1×10⁻⁴–5×10⁻² Torr at low substrate temperatures (T_s) between room temperature (RT) and 200°C were investigated. The opto-electrical properties of the films were found to be strongly dependent on the P_O2 during the film deposition. Under a P_O2 of 1×10⁻² Torr, ITO films with low resistivity of 5.35×10⁻⁴ and 1.75×10⁻⁴ Ω cm were obtained at RT (25°C) and 200°C, respectively. The films exhibited high carrier density and reasonably high Hall mobility at the optimal P_O2 region of 1×10⁻² to 1.5×10⁻² Torr. Optical transmittance in excess of 87% in the visible region of the solar spectrum was displayed by the films deposited at Po₂≥1×10⁻² Torr and it was significantly reduced as the P_O2 decreases.     

Optical properties of Er-doped SiO2-GeO2-Al2O3 planar waveguide fabricated by sol–gel processes

In this paper, we report silica based planar waveguides doped with Er³⁺, and co-doped with GeO₂ and Al₂O₃. These sol–gel derived planar waveguides were fabricated on SOS (silica on silicon) using multiple spin-coating and rapid thermal processing (RTP). Investigation has been made on their characteristics in terms of their application in optical amplification and lasing, including photoluminescence (PL), fluorescence lifetime, refractive index, propagation loss, surface roughness, Fourier transform infrared (FTIR) spectrum and X-ray diffraction (XRD) analysis. The propagation loss of a 20-layer planar waveguide was measured to be about 1.6 dB/cm for TE₀ and 2.2 dB/cm for TM₀ mode. A strong emission transition (⁴I_13/2→⁴I_15/2) at 1.536 μm with a lifetime of 3.6 ms has been obtained for an optimized molar composition of 90SiO₂: 10GeO₂: 20AlO_1.5: 1ErO_1.5.     

Enhanced ferroelectric properties of multilayer SrBi2Ta2O9/SrBi2Nb2O9 thin films for NVRAM applications

Ferroelectric SrBi₂Ta₂O₉/SrBi₂Nb₂O₉ (SBT/SBN) multilayer thin films with various stacking periodicity were deposited on Pt/TiO₂/SiO₂/Si substrate by pulsed laser deposition technique. The X-ray diffraction patterns indicated that the perovskite phase was fully formed with polycrystalline structure in all the films. The Raman spectra showed the frequency of the O–Ta–O stretching mode for multilayer and single layer SrBi₂(Ta_0.5Nb_0.5)₂O₉ (SBNT) samples was 827–829 cm⁻¹, which was in between the stretching mode frequency in SBT (813 cm⁻¹) and SBN (834 cm⁻¹) thin films. The dielectric constant was increased from 300 (SBT) to 373 at 100 kHz in the double layer SBT/SBN sample with thickness of each layer being 200 nm. The remanent polarization (2P_r) for this film was obtained 41.7 μC/cm², which is much higher, compared to pure SBT film (19.2 μC/cm²). The coercive field of this double layer film (67 kV/cm) was found to be lower than SBN film (98 kV/cm).     

Pd-Sn-Co纳米粒子修饰还原氧化石墨烯/CuBi2O4复合材料的制备及电催化性能

采用水热-浸渍还原法将Pd-Sn-Co纳米粒子固载到氧化石墨烯（GO）/CuBi₂O₄载体上,成功获得Pd-Sn-Co@还原氧化石墨烯(rGO)/CuBi₂O₄复合催化剂,并用于碱性介质中乙二醇的电催化氧化。通过比较单金属Pd、双金属Pd-Co、Pd-Sn及三金属Pd-Sn-Co@rGO/CuBi₂O₄四种负载型催化剂的电催化性能发现,三金属Pd-Sn-Co@rGO/CuBi₂O₄展现出最高的电催化活性和抗毒能力,其正向峰电流密度达到186.54 mA·cm?2,是商用Pd/C (29.57 mA·cm?2)的6.3倍。这种优良的电氧化性能归功于载体GO/CuBi₂O₄独特的三维结构为负载金属提供了充足的界面和活性位点及良好分散性的Pd-Sn-Co三金属纳米粒子之间强烈的协同作用,此外,将GO引入到CuBi₂O₄中有利于多金属纳米粒子的负载并吸附更多的含氧物种,提供优良的电子转移并增大与乙二醇分子的接触面积。这种新型复合材料的制备为发展高效Pd基电催化氧化直接醇类燃料电池提供了新途径,具有较好的理论和应用价值。      

In2Se3/CuSe核壳结构微纳粉的合成及其喷涂热处理制备CuInSe2薄膜

分别采用超声微波溶剂热法、常压溶剂热法及高压溶剂热法制备In₂Se₃/CuSe粉体, 研究不同方法制备In₂Se₃/CuSe粉体的物相、形貌, 并利用涂覆-快速热处理法制作薄膜太阳电池吸收层。通过XRD、Raman、FESEM和TEM对样品的物相、形貌和组成进行了表征。结果表明: 超声微波溶剂热法和常压溶剂热法得到的产物是以In₂Se₃+CuSe混合相的形式存在, 高压溶剂热法合成的In₂Se₃/CuSe粉体则呈核壳结构, (以In₂Se₃为核, CuSe为壳)。涂覆-快速热处理法制备CIS薄膜的FESEM照片结果表明, 高压溶剂热法合成的In₂Se₃/CuSe更容易获得平整致密的薄膜。将该CIS薄膜直接用于电池器件的组装, 获得的光电性能参数: V_oc为50 mV, J_sc为8 mA/cm²。     

Deposition chemistry in the Cat-CVD processes of the SiH4/NH3 system

Laser spectroscopic as well as mass-spectrometric techniques were employed to examine the deposition chemistry in the catalytic chemical vapor deposition processes of the SiH₄/NH₃ system. The absolute densities of NH, NH₂ and SiH₃ radicals were measured under various conditions. The densities of the stable products, H₂ and N₂, as well as those of the reactants, NH₃ and SiH₄, were also measured. The NH₂ density is always higher than that of NH and both densities decrease by the addition of SiH₄. The SiH₃ density increases nonlinearly with the increase in the SiH₄ pressure. The SiH₃ density was found to be much higher than that of NH₂ under near practical deposition conditions to fabricate Si₃N₄ films (an NH₃ to SiH₄ flow-rate ratio of 50:1, a total pressure of 20 Pa and a catalyzer temperature of 2300 K). No aminosilane molecules were identified, suggesting that the contribution of aminosilyl radicals to the film deposition is minor. Thus, NH₂ and SiH₃ must be the major deposition species to form Si₃N₄.     

氧化镧掺杂铌酸钾钠陶瓷的电、光性能研究

铌酸钾钠(K_0.5Na_0.5NbO₃, KNN)基陶瓷具有充放电速度快、透明度高、应用温度范围宽、使用寿命长等优点, 在脉冲功率器件等领域具有广阔的应用前景。通过改性技术提高铌酸钾钠基陶瓷的电、光性能是该方向的研究热点。本研究采用固相法制备0.825(K_0.5Na_0.5)NbO₃-0.175Sr_1-3x/2La_x(Sc_0.5Nb_0.5)O₃(x=0, 0.1, 0.2, 0.3)陶瓷(简称0.825KNN- 0.175SLSN), 研究La₂O₃掺杂对其相结构、微观形貌、光学、介电、铁电及储能性能的影响。研究结果表明: 0.825KNN- 0.175SLSN陶瓷具有高对称性的伪立方相结构; 随着La₂O₃掺杂量增大, 陶瓷的平均晶粒尺寸减小, 相变温度(T_m)及饱和极化强度(P_max)增大, 达到峰值后下降。在x=0.3时, 该体系陶瓷表现出优异的透明性, 在可见光波长(780 nm)及近红外波长(1200 nm)范围内透过率分别达65.2%及71.5%, 同时实现了310 kV/cm的击穿场强和1.85 J/cm ³的可释放能量密度。     

氮气压力对多孔氮化硅陶瓷显微组织和力学性能的影响

以α-Si₃N₄为原料, Y₂O₃为烧结助剂, 在三种不同的氮气压力(0.12、0.32和0.52 MPa)下烧结制备了多孔氮化硅陶瓷。研究了氮气压力对氮化硅的烧结行为、显微组织和力学性能的影响, 分别通过SEM观察显微组织并统计晶粒的长径比, 通过XRD对物相进行分析, 并对烧结试样进行三点弯曲强度测试。随着氮气压力的提高, 多孔陶瓷的线收缩率降低、气孔率提高, 这是由于低熔点的液相中N含量随氮气压力的提升而增加, 导致了液相粘度提高, 抑制陶瓷致密化。随着氮气压力的提高, 组织中的棒状β-Si₃N₄生长良好, 晶粒长径比增大, 其原因是高的液相粘度抑制了β-Si₃N₄形核, 有利于β-Si₃N₄生长。由于β-Si₃N₄棒状晶的作用, 陶瓷弯曲强度随氮气压力的升高得到改善, 但是气孔率的升高降低陶瓷的强度。在0.52 MPa的氮气压力下烧结的多孔陶瓷气孔率达58%, 弯曲强度为140 MPa。     

脉冲激光喷涂一步合成黑色二氧化钛复合涂层

为实现黑色纳米TiO₂有效负载, 提高实际应用能力, 本研究提出了脉冲激光溅射喷涂的方法。在石英玻璃基底上一步制备了非晶分子筛和金红石型TiO₂纳米晶的黑色复合涂层, 表征了复合涂层表面形貌, 测定了复合涂层粉末的光谱吸收性能、物相结构、化学价态以及光催化性能。研究结果表明: 涂层为2~5 μm球体堆积成的多孔结构, 在整个可见光区具有较强的吸收能力。脉冲激光溅射喷涂过程中, 分子筛高温熔融急冷转变为非晶态结构, TiO₂则由锐钛矿型转变为金红石型; 其中Ti⁴⁺离子部分被还原为Ti³⁺离子, 缩小了禁带宽度。脉冲激光溅射喷涂技术实现了黑色纳米TiO₂快速负载, 且在全光谱和可见光条件下仍表现出良好的光催化能力。     

衬底温度和生长氧压对La0.67Sr0.33MnO3:Ag0.08薄膜激光感生电压效应的影响

通过化学共沉淀法制备了La_0.67Sr_0.33MnO₃:Ag_0.08 (LSMO:Ag_0.08)多晶材料, 然后采用脉冲激光沉积(PLD)技术在LaAlO₃ (LAO)倾斜衬底上制备了LSMO:Ag_0.08薄膜。研究了衬底温度和生长氧压对薄膜结构、电输运特性及激光感生电压(LIV)效应的影响。结果表明: 当衬底温度为790℃、生长氧压为45 Pa时, 薄膜具有最大峰值电压(U_p)、优值(F_m)和各向异性Seebeck系数(ΔS); 在优化的衬底温度和生长氧压条件下, 长程Jahn-Teller协变引起ΔS数值提高, 这是LIV信号增强的主要原因。     

New transparent conducting MgIn2O4---Zn2In2O5 thin films prepared by magnetron sputtering

New materials for a transparent conducting oxide film are demonstrated. Highly transparent Zn₂In₂O₅ films with a resistivity of 3.9 × 10⁻⁴ Ω cm were prepared on substrates at room temperature using a pseudobinary compound powder target composed of ZnO (50 mol.%) and In₂O₃ (50 mol.%) by r.f. magnetron sputtering. MgIn₂O₄---Zn₂In₂O₅ films were prepared using MgIn₂O₄ targets with a ZnO content of 0–100 wt.%. The resistivity of the deposited films gradually decreased from 2 × 10⁻³ to 3.9 × 10⁻⁴ Ω cm as the Zn/(Mg + Zn) atomic ratio introduced into the films was increased. The greatest transparency was obtained in a MgIn₂O₄ film. The optical absorption edge of the films decreased as the Zn/(Mg + Zn) atomic ratio was increased, corresponding to the bandgap energy of their materials. It was found that the resistance of the undoped Zn₂In₂O₅ films was more stable than either the undoped MgIn₂O₄, ZnO or In₂O₃ films in oxidizing environments at high temperatures.     

The luminescent quantum efficiency of Cr ions in Cs2NaAlF6 single crystals

The luminescent quantum efficiency of Cr³⁺ ions in single fluoride crystal Cs₂NaAlF₆ was determined by using the simultaneous multiple-wavelength photoacoustic and luminescent experiments method, based on the generation of photoacoustic and luminescence signals after pulsed laser excitation. The luminescent quantum yield for the most important transition between the ⁴T₂→⁴A₂ vibronic levels was found to be 68±3%. This value agrees with that obtained from the ratio of the lifetimes of the corresponding transition at different temperatures.