高性能带隙基准电压源的设计

本文基于带隙基准电压源的工作原理,实现了一种利用PATA电流产生基准电压的高性能带隙基准源。该带隙基准源温度特性良好,具有较高精度的输出电压,所以使电源管理芯片的工作电压具有更小的温度系数,使芯片工作更稳定。利用Candance仿真器,基于CSMCO．5umCMOSI艺对电路进行仿真,对基准源进行仿真与分析。仿真结果表明,当R2=316时,基准电压有最好的温度特性;并运用cadence软件中的“Calculator”工具计算出在该温度时,带隙基准电压源有最小的温漂系数。     

一种新型CMOS带隙基准电压源

传统带隙基准源电路采用PNP型三极管来产生ΔVbe,此结构使运放输入失调电压直接影响输出电压的精度。文章在对传统CMOS带隙电压基准源电路原理的分析基础上,提出了一种综合了一阶温度补偿和双极型带隙基准电路结构优点的高性能带隙基准电压源。采用NPN型三极管产生ΔVbe,消除了运放失调电压影响。该电路结构简洁,电源抑制比高。整个电路采用SMIC 0.18μmCMOS工艺实现。通过Cadence模拟软件进行仿真,带隙基准的输出电压为1.24V,在-40℃~120℃温度范围内其温度系数为30×10-6/℃,电源抑制比（PSRR）为-88 dB,电压拉偏特性为31.2×10-6/V。     

一种高精度低电源电压带隙基准源的设计

设计了一种可在低电源电压下工作,具有较高电源电压抑制比、低温度系数和低功耗的带隙基准电压源。电路基于对具有正负温度系数的两路电流加权求和的原理,对传统电路做出了改进。采用UMC 0.25 μmCMOS工艺模型,使用Hspice进行模拟,设计的基准源输出电压为900 mV,电源电压可降低到1.1 V,温度系数为8.1×10^-6/℃。     

一种低温度系数带隙基准电压源

描述了一个具有高电源抑制比和低温度系数的带隙基准电压源电路。基于1阶零温度系数点可调节的结构,通过对不同零温度系数点带隙电压的转换实现低温度系数,并采用了电源波动抑制电路。采用SMIC 0.18μm CMOS工艺,经过Cadence Spectre仿真验证,在-20℃～100℃温度范围内,电压变化范围小于0.5mV,温度系数不超过7×10-6/℃。低频下的电源抑制比为-107dB,在10kHz下,电源抑制比可达到-90dB。整个电路在供电电压大于2.3V时可以实现正常启动,在3.3V电源供电下,电路的功耗约为1.05mW。     

一种高精度带隙基准电压源设计

提出一种采用0．35umCMOS工艺制作的带隙基准电压源电路,该电路具有高电源抑制比和低的温度系数。整体电路使用TSMC0．35umCMOS工艺,采用HSpice进行仿真。仿真结果表明,在-25～＋125℃温度范围内温度系数为6．45ppm／C,电源抑制比达到-101dB,电源电压在2．5～4．5V之间,输出电压Vrel的摆动为0．1mV,功耗为0．815mW．是一种有效的基准电压实现方法。     

一种低功耗CMOS带隙基准电压源的实现

运用带隙基准的原理,提出了一种带启动电路的低功耗带隙基准电压源电路。HSPICE仿真结果表明,在25℃3、.3 V下,电路功耗为16.88μW;另外,在-30~125℃范围内,1.9~5.5V下,输出基准电压VREF=1.225±0.0015 V,温度系数为γTC=14.75×10-6/℃,电源电压抑制比(PSRR)为86 dB。该电路采用台积电(TSMC)0.35μm 3.3 V/5 V CMOS工艺制造。测试结果显示,电路功耗仅为16.98μW。     

一种高性能CMOS带隙基准电压源的设计

本文提出了一种采用0.25μm CMOS工艺的高性能的带隙基准参考源。该电路结构简单,性能较好。用模拟软件进行仿真,在tt模型下,其温度系数为9.6 ppm/℃,电源抑制比(PSRR)为-56 dB,电压拉偏特性为384 ppm/V。而在其它模型下,也有较低的温度系数和较高的电源抑制比。     

一种低温漂超低功耗带隙基准电压源

基于SMIC 0.18 μm CMOS工艺,设计了一种低温漂超低功耗的带隙基准电压源。采用无电阻电路结构,使基准电压源具有了超低功耗性能。基于分段线性电流模技术,引入滤波电容,极大地降低了温漂系数,稳定了输出电压。利用Cadence Spectre EDA软件,对电路进行设计和仿真。结果表明,在 -50℃~100 ℃温度范围内,温漂系数仅为2.9×10-6/℃。在0.99～3 V的电压范围内具有稳定的基准输出。在1 kHz频率下电源抑制比为 -71.28 dB。整个带隙基准源的功耗仅为185.9 nW。     

一种低压CMOS带隙电压基准源

设计了一种与标准CMOS工艺兼容的低压带隙电压基准源,该电路应用二阶曲率补偿,以及两级运算放大器,采用0.8μm BSIM3v3 CMOS工艺,其中,Vthn=0.85 V,Vthp=-0.95 V。用Cadence Spectre软件仿真得出:最小电源电压1.8 V,输出电压590 mV,在0~100℃范围内,温度系数(TC)可达15 ppm/℃,在27℃时输出电压变化率为±2.95 mV/V。     

一种低温漂带隙基准电压源设计

文中设计了一种适用于DC—DC转换器的带隙基准电压源,在0.18μm的SIMC工艺下,采用Cadence Spectre对电路进行仿真分析。结果表明,在5 V的电源电压下,基准输出电压为1.214 V,在-40~+85℃范围内,基准电压的温度系数为2.46×10-6/℃。     

适用于13.56 MHz无源射频标签的稳压电路

介绍了一种用于13.56 MHz射频标签的新颖稳压电路结构.采用双路负反馈的方式,分别控制电荷泵两端的电压,可使输出电压稳定在2.8 V;防过压击穿保护电路可使传输管承受高达13 V的感应电压而不被击穿;自动节能电路可防止输出电容上的有限电荷倒流入天线.系统仿真采用华虹NEC的EF130工艺.仿真结果表明:当输入天线电压处于3～7 V之间时,输出电压在2.813～2.826 V之间,完全满足13.56 MHz射频标签中数字模块和EEPROM的电压要求.     

一种13.56MHz无源射频识别模拟前端的设计

提出了一种基于ISO/IEC18000-3协议的高频13.56MHz射频识别(RFID)标签芯片的模拟前端电路结构,采用Chartered 0.35μm EEPROM工艺进行流片验证。该芯片实现了无源RFID标签芯片通信时所需的整流、稳压供电、时钟恢复、信号解调以及副载波调制的全部功能。     

无源高频RFID标签芯片电源产生电路

无源RFID标签芯片的能量来自读写器发射的射频能量.针对符合ISO/IEC15693标准的无源高频(13.56 MHz)RFID标签芯片,对NMOS栅交叉连接整流电路结构进行了研究与设计,实现的NMOS栅交叉连接整流电路的能量转换效率为34.46 9,6,并设计一种低成本、低功耗的芯片工作电源产生电路,设计工艺采用SMIC 0.35 pm 2P3M CMOS EEPROM工艺.最后,给出了芯片的测试结果.测试结果显示:所设计的电源产生电路能够很好地工作在IS015693标准定义的最小磁场Hmin(150 mA/m)和最大磁场Hmax(5 A/m)之间.     

超高频RFID无源标签倍压整流电路设计

从法拉第定律和安培定律出发,基于波动原理的分布理论分析了射频波段倍压整流电路的特性,详细讨论了其在无线射频识别技术(RFID)设计中的应用.结果表明,超高频UHF(Ultra Hish Frequency)频段的倍压整流电路与经典的倍压整流电路分析有很大的不同.通过多次实验校正,最后在实践中成功设计出一种效果良好、可以实用的UHF频段RFID无源标签芯片的倍压整流电路.     

适用于无源RFID标签芯片的SPNVM优化设计

稳定的非挥发性存储器(Non-volatile memory,NVM)是射频识别标签系统中的重要组成部分,作为系统的信息承载体,用于存储用户或产品的基本信息。NVM的性能和造价是约束其发展的主要因素,为了改善非挥发性存储器的性能和降低其成本,文中基于传统的非挥发性存储器EEPROM,采用UMC 0.18μm标准CMOS工艺,优化设计了一个存储容量为256位高性能低成本的单栅非挥发性存储器,从工作电压、效率、速度和功耗的角度,对存储单元进行了隔离保护处理,改进了电荷泵的升压模块和稳压模块,采用电压检测型灵敏放大器。电源电压1.8V,编程电流为42μA,读电流为2μA,编程时间为5ms/bit,读速率为2Mb/s。     

13.56 MHz CMOS transceiver for RFID applications

An Amplitude Shift Keying (ASK) transceiver for RFID applications is presented in this paper. The proposed transceiver is suitable for communications with electronic devices that are powered through an inductive link. The circuit has been designed to be compatible with the communication standards ISO 14443. It operates at 13.56 MHz with a communication speed from 200 kHz up to 847 kHz. In modulation mode of operation, a solution based on programmable CMOS inverters is proposed to control the modulation depth in the range [0–100%]. The demodulator has been designed using versatile current rectifier and a simple operational transconductance amplifier stage. The proposed transceiver was implemented in a standard 0.5 μm CMOS process. The circuit covers an area of 2 mm² and the total DC power consumption is lower than 5.3 mW under 4V DC supply voltage. Stéphane Meillére has received the Engineer degree in Microelectronics from the ISEN-Toulon, Institut Supérieur d’Electronique et du Numérique, School at Toulon in 2000 and the M.Sc. and Ph.D. degrees from the University of Provence Aix-Marseille I, France, in 2000 and 2004, respectively, all in Microelectonics. From 2003 to 2005, he worked as a Research Engineer at the ISEN-Toulon. Since 2005 he joined the University of Provence as an Assistant Professor. His research interests are mainly in the design of full custom ASICs. He integrated in the same time the Integrated Circuits Design Team at the L2MP laboratory. He worked on different research project with industry. Hervé Barthélemy has received the MSc degree in Electrical Engineering in 1992 and the PhD degree in Electronics from the University of Paris XI Orsay, France in 1996. In 2002 he received the HDR degree from the University of Provence, Aix-Marseille I, France. From 1996 to 2000 he was an Assistant Professor at the Institut Supérieur d’Electronique de la Méditerranée (ISEN) in Toulon, France. Since 2000 he joined the University of Provence where is has been a full Professor in 2005. Since 2005 he has headed the Integrated Circuits Design Team at the L2MP laboratory. The team counts 12 Researchers and 20 PhD students and is involved in several research projects with industry. His research interests are mainly in the design of radiofrequency analog integrated circuits. He authored and co-authored multiple publications in international journals and conference proceeding. Michel Martin received an engineering degree in applied physics, option Micro-electronics from Ecole Nationale Supérieure de Physics in Marseille in 1991. He worked previously in ST Microelectronics, and he was involved in the design of the Smart Card Group’s product. He joined Gemplus in ’91 where he designed chips for secured smart cards memories. In 1995, he was the Co-founder of INSIDE Contactless. He was involved in the analog and EEPROM memories designs for contact and contactless chips. Michel was promoted I.C. Design Director with a team of 15 people divided on 2 Design Centers. He still maintains an active part in the chip Design. He is also the responsible for technical interface with the foundries to develop EEPROM memory bit cell, and improve the new processes dedicated the smart cards application.     

高频RFID读写器射频模拟前端的实现

射频识别(RFID)系统主要由RFID读写器和RFID电子标签两部分组成.给出了高频(13.56MHz)RFID系统中读写器射频模拟前端的电路设计,符合ISO/IEC14443 type A/type B,ISO/IEC15693和ISO/IEC18000-3中任一个标准的读写器芯片设计均可采用,设计工艺采用了中芯国际0.35μm 2P3M混合CMOS技术,并给出了Cadence环境下的仿真结果.     

UHF RFID无源标签的芯片供电机理

介绍了UHF RFID无源标签的供电特点,即采用无线功率传输供电,或利用片上储能电容充放电实现对芯片电路供电。同时为保证通信需求,应该做到充电与放电供需平衡,可取的设计是将标签所接收的射频能量大部分用于浮充供电;为集中更多能量用于浮充供电,应当尽量减少射频能量的其它应用消耗,包括接收时段的解调解码、应答时段的调制和发送。     

A 2 Kbits Low Power EEPROM for Passive RFID Tag IC

This paper presents a low power con-sumption and low cost electrically erasable program-mable read-only memory(EEPROM)for radio frequency identification(RFID)ta...     

一种低功耗高动态范围的915MHz无源射频标签

设计了一种适用于NCITS-256-1999协议的915MHz无源射频只读标签.芯片具有低功耗、高动态范围的特点.1.6V电源电压下模拟前端的静态工作电流为1.6μA,芯片正常工作所需要的最小射频信号输入功率为45μW.芯片在0.18μm CMOS工艺下流片验证,测试结果表明,芯片能够很好地满足设计要求.