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激光熔覆制备Al-Si-Cu-Fe准晶态合金涂层的研究 总被引:2,自引:0,他引:2
本文报道了在氮气气氛下 ,利用激光熔覆Al50 Si15Cu2 0 Fe15准晶粉末制备Al Si Cu Fe准晶态合金涂层。通过选取适当的激光熔覆参数 ,成功的制备了Al Si Cu Fe准晶态合金涂层。X射线衍射 (XRD)分析显示涂层中含有 1/ 1立方类似相α- (Al,Si)CuFe、β -Al(Si)Fe(Cu)相、λ -Al13 Fe4相和Al0 .7Fe3 Si0 .3 相。制备的涂层显微硬度达Hv914 ,α相和 β相中高的Si元素含量和类似相λ -Al13 Fe4的高含量是影响Al Si Cu Fe合金涂层硬度的主要因素。光学显微镜下显示Al Si Cu Fe合金涂层枝晶细密且取向比较一致 ,一次枝晶臂间距约为 2 5 μm ,且有明显的二次枝晶存在 ,二次枝晶臂间距约为 8μm。摩擦学试验显示 ,随着滑动速度的增加 ,涂层与对偶球之间的摩擦系数逐渐降低 ,且趋于稳定。 相似文献
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退火氧压对Zn_(0.99)Fe_(0.01)O薄膜的结晶质量及其激光感生电压效应的影响 总被引:2,自引:1,他引:1
采用脉冲激光沉积法(PLD)在Al2O3衬底上成功制备了Zn0.99Fe0.01O薄膜,研究了退火氧压对Zn0.99Fe0.01O薄膜的晶体结构及其激光感生电压(LIV)效应的影响。X射线衍射仪分析结果表明,Zn0.99Fe0.01O具有六角纤锌矿结构,并且是沿[001]取向近外延生长。同时随着退火氧压的增大,薄膜的晶粒尺寸先增大后减小,退火氧压为2000 Pa时薄膜晶粒尺寸最大,结晶质量最好。另外在10°倾斜的Al2O3单晶衬底上制备的Zn0.99Fe0.01O薄膜在3000 Pa的退火氧压下可以观察到最大的LIV信号,达到79.5 mV。 相似文献
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Sb2Te3基半导体合金是目前性能较好的热电半导体材料.将材料低维化处理可以获得较块状材料更大的热电优值.通过磁控溅射工艺制备低维Sb2Te3薄膜,并通过AFM、XRD和XPS测试方法对薄膜的成分、薄膜表面以及原子偏析进行表征.通过退火工艺去除薄膜应力,观察退火工艺前后薄膜表面形貌的变化以及退火温度对薄膜表面质量的影响.试验结果表明通过磁控溅射工艺所制备出的Sb2Te3薄膜为非晶态,随着溅射功率增大,薄膜的表面粗糙度增大.退火可使薄膜变为晶态,但是表面粗糙度增大.较大或较小溅射功率下所制备的薄膜其合金成分与合金靶材有较大偏差. 相似文献
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脉冲激光沉积类金刚石膜技术 总被引:2,自引:0,他引:2
脉冲激光沉积(PLD)技术制备类金刚石(DLC)薄膜存在着金刚石相含量较低、石墨颗粒多、薄膜与衬底附着力差、膜内应力大等技术难题,为此,研究人员研究出了多种技术措施,如通过引入背景气体、超快激光、偏压、磁场以及加热等措施提高了薄膜金刚石相含量;采用金刚石或丙酮靶材、减小单脉冲能量等措施减少了石墨颗粒;采用间歇沉积、真空退火、超快激光等措施减少了膜内应力;合理没计过渡层改善了膜与衬底间的附着力等.这些技术有力地推动了脉冲激光沉积技术的发展. 相似文献
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由于激光烧蚀靶材形成的等离子体羽辉呈高斯分布,导致沉积的大面积薄膜尤其是球面衬底上的薄膜极不均匀,严重限制了脉冲激光沉积法的应用。设计构建了旋转与变速摆动相结合的三维衬底机构,实现对半球面不同区域的连续沉积,保证了膜层的均匀性;建立膜厚分布的数学模型,模拟分析了运动参数对膜厚分布的影响;首次利用脉冲激光沉积技术制备出口径200 mm大尺寸半球面衬底上的均匀类金刚石膜,顶角80范围内膜厚不均匀性5%。脉冲激光沉积法在大口径半球面衬底上制备均匀类金刚石膜在空间观测等领域均具有巨大的应用前景。 相似文献
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《Materials Science in Semiconductor Processing》2007,10(1):24-35
An analysis of a vacuum-deposited fluorene-thiophene-based material 5,5′-Di(9,9′-di-(butyl)-fluorene-2,2′-bithiophene) (DBFBT) onto different substrates, which can act as dielectric gate for organic field-effect transistor is made. Also a new method for preparation of high-quality dielectric thin films made of polytetrafluoroethylene (PTFE) is described. This method includes film formation by means of a special kind of vacuum deposition polymerization (VDP) of PTFE, assisted by electron cloud activation. Rubbing of these layers makes them orienting substrate materials which induce spontaneous ordering of deposited organic semiconductor layers. We investigated structure and morphology of PTFE layers deposited by vacuum process in dependence on deposition parameters: deposition rate, deposition temperature, electron activation energy and activation current. The molecular structure of the PTFE films was investigated by use of infrared spectroscopy. By means of ellipsometry, values of refractive index between 1.33 and 1.36 have been obtained for PTFE films in dependence on deposition conditions. Using the cold friction technique orienting PTFE layers with unidirectional grooves are obtained. We have shown that DBFBT layers growth on top of rubbed PTFE films present a certain alignment suitable for building organic field-effect transistors with better transport parameters. 相似文献
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We report the deposition of Nb2O5 films on unheated BK-7 glass substrates using remote plasma sputtering system. The remote plasma geometry allows pseudo separation of plasma and target bias parameters, which offers complete deposition rate control. Using appropriate oxygen flow rates, high-density and low-loss Nb2O5 films are deposited with rates up to 0.49 nm/s. Lower deposition rates (~0.026 nm/s) can also be obtained by working at low target current and voltage and at low pressure. Nb2O5 films deposited at different rates have the refractive index of about 2.3 and the extinction coefficient as low as 6.9×10-5. 相似文献
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J. A. Caballero Y. D. Park A. Cabbibo J. R. Childress 《Journal of Electronic Materials》1997,26(11):1274-1278
We have deposited ferromagnetic NiMnSb thin films by sputtering from a single composite target onto Si wafer substrates. Similarly
to earlier results using glass substrates, we find that a combination of low radio frequency power, low argon pressure, and
moderate substrate temperature is successful at directly obtaining stochiometric, single-phase polycrystalline films with
the bulk C1b crystal structure. The use of Si substrates, however, is compatible with standard electronic processing and integration into
electronic device structures. The similarity of the films to bulk NiMnSb suggests that the predicted half-metallic (100% spin-polarized)
electronic properties of NiMnSb can be reproduced in a magnetically active thin-film device structure. 相似文献
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Guisheng Zhu Li Zhi Huijuan Yang Huarui Xu Aibing Yu 《Journal of Electronic Materials》2012,41(9):2376-2379
In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused. 相似文献
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使用倾斜角沉积(GLAD)的电子束蒸发技术,制备了倾斜角度在60°~85°之间的ZnS双折射雕塑薄膜(STF)。使用X射线衍射(XRD)和扫描电镜(SEM)检测了ZnS薄膜的结晶状态和断面形貌,使用Lamda-900分光光度计测量了薄膜在不同的偏振光入射时的透过率。研究发现,室温下倾斜沉积ZnS薄膜断面为倾斜柱状结构,且薄膜的结晶程度不高。在相同的监控厚度时,随倾斜角度增大,沉积到基片上的薄膜厚度逐渐变小,但仍然大于余弦曲线显示的理论厚度。根据偏振光垂直入射时薄膜的透过光谱计算了不同角度沉积的薄膜的折射率和双折射。结果显示当倾斜角度为75°时,薄膜的双折射效应最显著,此时Δn=0.044。 相似文献
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本文采用脉冲激光沉积(PLD)法,在单晶硅试样表面上沉积制备了TiN/AlN多层硬质薄膜;研究了激光能量、靶衬距离和基体温度等工艺参数对薄膜性能的影响。采用X射线衍射(XRD)、扫描电子显微镜(SEM)和显微硬度仪方法研究了薄膜的性能。结果表明:薄膜由TiN和立方AlN细晶和无定型的非晶TiN、AlN组成,薄膜的调制周期尺寸均在λ=(50-200)nm范围内,多层结构界面清晰;当多层薄膜调制周期在100nm以下时,薄膜的显微硬度明显高于TiN和AlN的混合硬度值。 相似文献
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A1N thin films were reactively deposited onto Al layers on negatively biased glass and Si substrates at temperatures <80°C
by coherent magnetron sputtering. The low temperature deposition of the films without substrate heating was achieved by increasing
the target-to-substrate distance, and therefore the heating effect of the plasma is relieved. The microstructure and morphology
of the films deposited at different bias voltage and target-to-substrate distance were investigated. The films are amorphous
when the target is far from the substrate for a bias voltage up to −320V. When the target-to-substrate distance is decreased
to 17 cm a preferred (002) orientation of AIN films is observed at a bias voltage of −240 V. Additionally, the deposited films
have specular reflectance and no voids can be observed. This low temperature technique can be used for applications in acoustic
wave devices due to the improved homogeneity of the films and step coverage. 相似文献
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Emulsion-based, resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) was used to deposit CdSe nanoparticle films and hybrid nanocomposite films comprising colloidal CdSe nanoparticles embedded in a low band gap polymer, poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT). We show that, in contrast to traditional MAPLE deposition, the CdSe nanoparticle film deposited by emulsion based RIR-MAPLE is contiguous and uniform, and it maintains the optical properties of the nanoparticle solution. Moreover, we show that the RIR-MAPLE deposited PCPDTBT/CdSe hybrid nanocomposite film exhibits a relatively random and uniform distribution of CdSe nanoparticles without the significant phase segregation that is observed in hybrid nanocomposite films deposited by spin-casting. Finally, hybrid organic solar cells based on nanocomposite films deposited by the RIR-MAPLE technique were fabricated and characterized, showing 0.4% power conversion efficiency. This is the first demonstration of a polymer–nanoparticle hybrid organic solar cell fabricated by a MAPLE-related technique. 相似文献
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采用脉冲激光沉积法(PLD)在单晶硅基底上制备了WSx固体润滑薄膜。利用X射线能谱仪(EDS)、扫描电子显微镜(SEM)、X射线衍射仪(XRD)对薄膜的成分、形貌和微观结构进行了分析,采用球盘式磨损试验机在大气(相对湿度为50%~55%)环境下评价薄膜的摩擦学特性。结果表明:薄膜中S和W的原子数分数比(简称S/W比)在1.05~3.75之间可控,摩擦系数为0.1~0.2;S/W比高于2.0时薄膜成膜质量和摩擦系数显著恶化。正交试验法得出影响薄膜S/W比的因素主次顺序分别是气压、温度、靶基距和激光通量;最优工艺参数是温度150℃、靶基距45mm、激光通量5J/cm2、气压1Pa,可获得结构致密、成分接近化学计量比的WSx薄膜。 相似文献