Single‐Stage ZVS‐PWM AC‐AC Power Converter Using All SiC Power Module for High‐Frequency Induction Heating Applications

This paper presents a novel prototype of a single‐stage zero voltage soft‐switching pulse‐width modulation ‐controlled ac‐ac converter with a silicon carbide (SiC)‐MOSFET/SiC‐SBD power module for high‐frequency (HF) induction heating (IH) applications. The newly developed ac‐ac converter can achieve higher efficiency than a Si‐IGBT/Si‐PN diode power module‐based prototype due to a low ON‐resistance of SiC‐MOSFET and a low forward voltage of SiC‐SBD under the condition of HF switching. The performances of the new prototype converter are evaluated by experiment with a single‐phase IH utensil of ferromagnetic stainless metal, after which the high‐efficiency and low switching noise characteristics due to the all SiC power module are actually demonstrated.     

Si IGBT/SiC MOSFET混合器件及其应用研究

综述了Si IGBT/SiC MOSFET混合器件在门极优化控制策略、集成驱动设计、热电耦合损耗模型、芯片尺寸配比优化和混合功率模块研制等方面的最新研究成果与进展。Si IGBT/SiC MOSFET混合器件结合了SiC MOSFET的高开关频率、低开关损耗特性和Si IGBT的大载流能力和低成本优势,已有文献的最新研究和实验结果验证了该类器件的优异特性,表明其对高性能电力电子器件实现更高电流容量、更高开关频率和较低成本具有重要意义,是高性能变换器应用中非常有潜力的功率器件类型。     

Development of High‐Power Density Interleaved dc/dc Converter with SiC Devices

We developed an interleaved dc/dc converter with SiC devices. We applied full‐SiC modules including MOSFETs and SBDs to the interleaved dc/dc converter to achieve a high‐power density. An SiC has a high temperature resistance, which facilitates an improvement in high‐frequency drives. We achieved a high‐power density by utilizing this high temperature resistance. We also fabricated a prototype and tested it with loads up to 65 kW.     

Iron Loss Characteristics of Electrical Steel Sheet under Inverter Excitation by Power Semiconductor with Extremely Low On‐Voltage Property

In this study, it is demonstrated that the iron loss from the SiC‐MOSFET, which represents a new power semiconductor with an extremely low on‐voltage for electric machine drives, is almost the same as that from an Si‐IGBT, which is a conventional power semiconductor. In order to evaluate the iron loss characteristics when an SiC device is used, two single‐phase pulse width modulation inverters were built and used for the excitation of a ring made up of electrical steel sheet. One of the inverter employed an SiC‐MOSFET, and the other inverter employed an Si‐IGBT. The iron losses for the two inverters are compared.     

基于SiC MOSFET的辅助变流器应用研究

辅助变流器是轨道交通车辆的重要部件,采用SiC MOSFET作为开关器件能整体提升变流器功率密度。将原有变流器系统完成以SiC MOSFET为开关器件的功率模块整体替代,对周边无源器件进行优化设计;根据SiC MOSFET器件特性设计一款驱动电路,并进行性能测试;针对辅助变流器主电路拓扑,建立各部分损耗模型,通过仿真进行验证,并对前后系统进行损耗对比。     

1200V碳化硅MOSFET与硅IGBT器件特性对比性研究

搭建了输出特性测试电路、漏电流测试电路、双脉冲测试电路和Buck电路,对1 200 V SiC MOSFET和Si IGBT的输出特性、漏电流、开关特性和器件损耗进行了对比研究,分析了SiC MOSFET的主要优缺点。分析结果表明,SiC MOSFET在高温条件下依然拥有稳定的阻断能力;在同样的工作条件下,SiC MOSFET损耗更小,适合在高频率、大功率场合下使用;SiC MOSFET的跨导低,导通电阻大,所以门极驱动电压需要比较大的摆幅(-5/+20 V);由于开关速度很快,SiC MOSFET对线路杂散参数更加敏感。     

The Proposal of Isolated Single‐Stage AC‐DC Converter

An isolated ac‐dc converter has been used in various applications, such as power supply and as a battery charger for electric vehicle. In conventional converters, a loss in each conversion stage can be reduced by applying a soft switching method. However, a conventional converter has many conversion stages including the rectifier stage, power factor correction, and dc/dc converter stages; thus, it is difficult to reduce the total converter loss and size. In this paper, we propose a novel isolated‐type ac‐dc converter with only one conversion stage; it can realize a zero‐voltage switching operation in all switching devices.     

A bidirectional isolated DC/DC converter as a core circuit for 3.3‐kV/6.6‐kV power conversion systems in the next generation

This paper describes a bidirectional isolated DC/DC converter considered as a core circuit for next‐generation 3.3‐kV/6.6‐kV high‐power‐density power conversion systems. The DC/DC converter is intended to use power switching devices based on SiC and/or GaN, which will be available on the market in the near future. A 350‐V, 10‐kW, and 20‐kHz DC/DC converter is designed, constructed, and tested in this paper. It consists of two single‐phase full‐bridge converters with the latest trench‐gate Si‐IGBTs and a 20‐kHz transformer with a nano‐crystalline soft‐magnetic material core and litz wires. The transformer plays an essential role in achieving galvanic isolation between the two full‐bridge converters. The overall efficiency from the DC‐input to DC‐output terminals is accurately measured to be as high as 97%, excluding gate drive circuit and control circuit losses from the whole loss. Moreover, loss analysis is carried out to estimate effectiveness in using SiC‐based power switching devices. The loss analysis clarifies that the use of SiC‐based power devices may bring a significant reduction in conducting and switching losses to the DC/DC converter. As a result, the overall efficiency may reach 99% or higher. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 163(2): 75–83, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20505     

用于未来铁路牵引链的SiC MOSFET对偶模块特性

SI基IGBT广泛的应用于铁路牵引变换器上,而在不远的将来,SiC将有望在三个方面突破开关器件的极限：高闭锁电压,高工作温度和高开关速度。如今,第一代SiC MOSFET模块已经在市场出现,并且前景很好。虽然仍旧受限于击穿电压,但这种大间隙器件还是会提高牵引链效率。特别是有望能够明显的降低开关损失,从而能够提高功率重量比。     

碳化硅MOSFET电热耦合模型及分析

为在Matlab/Simulink环境下准确预测碳化硅Si C(silicon carbide)功率器件在实际工况下的结温变化,针对Si C MOSFET器件提出了一种基于时变温度反馈的电热耦合模型建模方法。该方法能更好地反映Si C MOSFET在导通和开关过程中的性能特点,模型从器件物理分析和工作机理出发,将功率损耗和热网络模块引入建模,实时反馈器件结温和更新温度相关参数。采用CREE C2M0160120D Si C MOSFET器件进行测试,根据制造商数据手册和测试实验中提取,仿真结果证实了该建模方法的正确性,为器件的寿命预测和可靠性评估提供了研究基础。     

基于SiC MOSFET的单相三电平变换器设计

围绕高开关频率小功率单相交直交变换器效率提升问题,设计了一种基于SiC MOSFET的高效率单相三电平三桥臂变换器.该变换器主要包括分别用于整流器和逆变器2个T型三电平桥臂和一个公共桥臂,其多电平拓扑可优化谐波性能,减少开关损耗.分析了变换器运行方式,并设计了包含直流电压控制的级联电压电流控制器.同时,因T型三电平桥臂...     

SiC MOSFET短路失效与退化机理研究综述及展望

SiC MOSFET可以大幅提升变流器的效率和功率密度,在高频、高温、高压等领域有较好的应用前景。但是,由于其短路耐受时间短、特性退化现象严重以及失效机理模糊等因素,致使SiC MOSFET的普及应用受到了限制。因此,探究SiC MOSFET短路失效与特性退化的机理,可以为SiC MOSFET器件的应用及其保护电路的设计提供指导,具有重要的研究价值。该文首先归纳SiC MOSFET的短路故障类型,并针对其中一种典型的短路故障进行详细的特性分析。在此基础上,论述SiC MOSFET单次短路故障后存在的两种典型失效模式,综述其在两种失效模式下的失效机理以及影响因素。其次,对SiC MOSFET经历重复短路应力后器件特性退化机理的研究现状进行系统的总结。最后指出当前SiC MOSFET短路失效与特性退化的研究难点,展望SiC MOSFET短路特性研究的发展趋势。     

Capacitor current imbalance and its suppression method between phase legs for three‐phase inverter

This paper proposes a method to suppress the capacitor current imbalance between the phase legs of a three‐phase inverter circuit. This circuit consists of half‐bridge modules and DC‐link capacitors closely connected to each module. It can be designed for low stray inductance between power semiconductor devices and DC‐link capacitors in each module. However, in the conventional structure, the stray inductance between the phase legs may lead to an imbalance in the capacitor current due to the DC‐side resonance phenomenon under a higher switching frequency condition by using a SiC MOSFET. This paper presents the analyses of the equivalent circuit considering the circuit configuration, which suggests that capacitor current imbalance occurs depending on the stray inductance between phase legs. To suppress the capacitor current imbalance, a delta‐type bus bar connecting phase legs is proposed. The experiment results at 300 V and 4.6 A demonstrate the suppression effectiveness of the proposed method.     

Performance Verification of High‐Efficiency PV Power Conditioner Integrated with SiC MOSFETs and Cooperative Control Method

A high conversion efficiency is always required for photovoltaic power conditioners to utilize PV‐generated DC power with minimal loss. The cooperative control method has been developed as one of the control methods that improves the conversion efficiency, which is applicable to nonisolated power conditioners consisting of a boost converter and an inverter. In the cooperative control method, the boost converter creates part of the AC voltage waveform, and either the boost converter or inverter performs switching only during a required period. Therefore, it has the advantage of reducing switching losses. In this paper, we present a study of a cooperative‐control‐type power conditioner assuming its use in grid‐connected operation and the results of a performance verification of prototype power conditioner. A microcontroller is used for cooperative control. The experimental results show that the prototype power conditioner integrated with SiC MOSFETs and the cooperative control method achieves an efficiency of 97.4% at an output of 5.5 kW.     

基于SiC MOSFET的移相全桥ZVS变换器

移相全桥ZVS变换器通过软开关技术,显著地减小了开关损耗,并进一步提高装置的效率,得到了广泛应用,但传统移相全桥ZVS变换器在低压大电流情况下整流二极管导通损耗较大。首先采用同步整流技术,降低了次级整流管的导通损耗;然后采用在原边加箝位二极管的方法抑制了副边整流管两端的电压尖峰;并且采用在原边串联隔直电容的方法抑制直流分量;最后用Saber搭建SiC MOSFET半桥模块的仿真模型,通过MATLAB和Saber协同仿真来验证高频下SiC MOSFET的工作特性。     

基于低压器件的高效高功率密度串联谐振DC-DC变换器

工作于MHz的串联谐振变换器SRC(series resonant converter)由于简单的结构与全负载范围的原边开关管软开关,可以实现较高的效率与功率密度,适合隔离型DC-DC变换器高频、模块化的发展趋势,因此越来越受工业界与学术界的关注.业界基于高压Si MOSFET的DC-DC模块大多工作在数百kHz,其效...     

A New PV Converter for Grid Connection Through a High‐Leg Delta Transformer Using Cooperative Control of Boost Converters and Inverters

This paper proposes a new high‐efficiency photovoltaic (PV) converter for grid connection through a high‐leg delta transformer, which is composed of a symmetrically connected boost converter and three half‐bridge inverters. One of the three half‐bridge inverters is connected to the boost converter, and the others are directly connected to the PV terminals. This circuit configuration enables to reduce the power losses in both boost converter and inverter. This paper also proposes a new cooperative control method between the symmetrically connected boost converter and inverter. The control method can reduce the average switching frequency to 75% of that in a conventional one, resulting in a great reduction in switching power loss. Experimental results show that the proposed circuit improves its European efficiency from 91.6% to 94.5%.     

大电流下SiC MOSFET模块的暂态温度特性研究

由于碳化硅(SiC)的材料特性,在极端温度下,碳化硅金属氧化物半导体场效应晶体管(SiC MOSFET)相对传统硅基器件有突出优势。目前对SiC MOSFET暂态温度特性的研究,主要以单管小电流实验为主,大电流下暂态温度特性的研究还不充分。为分析和验证大电流下暂态温度这一特性,在理论分析的基础上,以CREE 1200 V/300 A半桥SiC MOSFET模块为研究对象,通过双脉冲测试平台研究SiC MOSFET模块及其驱动电路在不同温度环境下的暂态性能。对比分析了不同温度下开关时间、开关损耗、电应力及电流、电压过冲的差异,实验结果对SiC MOSFET模块在大电流下的选型和驱动设计具有一定的参考意义。     

A common‐source active clamped complex type converter

This paper presents a novel common‐source active clamped complex type converter. This converter is the intermediate isolated bus converter for the distributed power supply system in telecommunications equipment. Using active clamped circuits, the switching loss and switching noise can be reduced by means of the soft switching techniques. By adding an auxiliary winding to the transformer, the proposed converter is a common‐source type having direct connection of sources of the two MOSFET switches. As a result, the pulse transformer becomes unnecessary, and the drive circuit is simplified. In the experiment, at 48 V ratings input voltage, 36 to 72 V worldwide input voltage, and 12 V output voltage, the ZVS operation is performed on the main switch and auxiliary switch, and highest efficiency 92.7% is obtained. © 2009 Wiley Periodicals, Inc. Electr Eng Jpn, 167(2): 64–70, 2009; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20682     

A 7.5‐μW 0.08‐mm2 single‐ended SC delta‐sigma ADC for acoustic sensor applications

This study presents an ultra‐low‐power, small‐size, 1‐bit, single‐ended, and switched‐capacitor (SC) delta‐sigma analog‐to‐digital converter (ADC) for wireless acoustic sensor nodes. This wireless sensor node has a delta‐sigma ADC that converts the sensed signal to a digital signal for convenient data processing and emphasizes the features of small size and low‐power consumption. The chip area of the delta‐sigma ADC is dominated by the capacitor; therefore, a novel common‐mode (CM) controlling technique with only transistors is proposed. This ADC achieves an extremely small size of 0.08 mm² in a 130‐nm CMOS process. The conventional operational transconductance amplifiers (OTAs) are replaced by inverters in the weak inversion region to achieve high power efficiency. At 4‐MHz sampling frequency and 0.7‐V power supply voltage, the delta‐sigma ADC achieves a 55.8‐dB signal‐to‐noise‐plus‐distortion ratio (SNDR) and a 298‐fJ/step figure‐of‐merit (FOM) in a signal bandwidth of 25 kHz, while consuming only 7.5 μW of power. Copyright © 2015 John Wiley & Sons, Ltd.