一种基于集总电荷的大功率PIN二极管改进电路模型

提出了一种基于集总电荷建模方法的大功率PIN二极管改进电路模型。传统的集总电荷模型使用有效载流子寿命模型,未考虑载流子寿命和基区电荷浓度之间的关系,导致模型的仿真精度偏低。该文在研究传统PIN二极管集总电荷模型的基础上,首先分析了二极管基区载流子寿命随注入浓度和温度的变化规律,并提出了载流子寿命随浓度和温度变化的集总电荷模型。然后,基于提出的载流子寿命模型建立了改进的PIN二极管集总电荷电路模型,并加入模型物理参数的温度函数,实现了模型对不同温度下PIN二极管通态和瞬态特性的表征,并在PSPICE仿真平台中实现了该模型。最后,用1 700 V/1 000 A IGBT模块中反并联续流二极管对模型进行了实验,仿真和实验结果对比验证了该模型的准确性。     

三电平移相全桥变换器整流二极管RC吸收参数多目标优化设计

传统的整流二极管RC吸收参数设计基于谐振等效电路,不能精确刻画二极管反向恢复过程,RC参数难以优化.为此,基于大功率PIN二极管集总电荷模型,采用多目标优化设计RC吸收电路参数.首先,根据三电平移相全桥变换器拓扑结构及调制方式,分析了RC参数对整流二极管反向电压尖峰的影响规律.其次,基于大功率PIN二极管的集总电荷模型...     

PIN二极管的PSPICE子电路模型

提出了一种PIN二极管的PSPICE子电路模型。该模型同时考虑了二极管的反向恢复、端区复合以及空间电荷区边界移动效应。能更精确地模拟PIN二极管的开关特性。仿真结果证明了该模型的正确性和准确性。     

具有可控基区底面空穴注入的新型二极管结构

本文提出了一种3.3kV可控基区底面空穴注入的新型二极管结构,简称CIBH(ControlledInjectionofBacksideHoles)二极管。新二极管结构的特点是在阴极侧埋入浮置p层。这些p掺杂区在nn 结形成强电场,避免在nn 结产生雪崩。与无p层相同结构的二极管相比,CIBH二极管显著改善了动态皮实性以及小电流密度下的软反向恢复特性。仿真和首次试制结果显示这一新二极管概念是可以实现的。     

基于集总电荷的PIN二极管反向恢复模型

以MUR8100PIN二极管为对象,研究了PIN二极管模型参数抽取的试验方法和试验手段。在小电压等级下,利用试验抽取的二极管模型参数建立其反向恢复模型,并用仿真软件Saber验证了模型的正确性。最后,分析了影响模型精度的近似条件和物理效应。     

柔性单晶锗PIN二极管在关态下的建模研究

介绍了柔性单晶锗纳米薄膜（GeNM ）PIN 二极管的制备方法和反向偏置下对应不同弯曲状态下的射频特性。为了定量研究在反向偏置下机械弯曲对柔性PIN二极管射频特性的影响，分别搭建了不同弯曲半径下的等效电路模型。通过研究不同机械应力作用下模型中的各个参数的变化得到二极管内部电阻，寄生电感，p＋ p-结的电阻以及p-n＋结的电容为影响其射频特性的主要因素，机械弯曲使这些参数值单调变化，导致柔性单晶锗PIN二极管关态下的射频特性变好。这在应变测量领域显示出很大的发展应用潜力。     

InP基PIN开关二极管结构设计与制备

开关二极管是微波控制电路中的一种应用最普遍的控制器件,它可以实现近似短路和开路的功能.Ⅰ层厚度对PIN二极管的器件特性具有重要的影响.利用Silvaco TCAD软件对InP基PIN开关二极管器件结构进行建模仿真,分析不同1区厚度对二极管的电流电压特性的影响,得出最优值.利用化合物半导体材料外延与器件工艺平台,制备出InP基PIN开关二极管器件,直流特性测试结果表明,PIN开关二极管的开启电压为0.525 V,反向击穿电压大于12 V.为进一步实现毫米波开关电路奠定了基础.     

用于传导EMI仿真的二极管高频模型的研究

阐述了一种能够仿真PIN二极管传导EMI的高频模型。该模型全面考虑了二极管的正向恢复、端区复合以及空间电荷区边界移动效应,并且利用Saber的MAST语言得以实现。仿真和实验结果的比较也证明了该模型的正确性和准确性。     

PIN二极管开关在微波控制电路中的应用

本文主要介绍了PIN二极管开关的原理和特性，并在实际中得到了应用。     

风电Crowbar装置整流二极管失效机理分析

鉴于风电Crowbar装置整流二极管长期处于逆变器的开关脉冲整流、高-di/dt和导通时间短的工作状态下,存在反向恢复工况恶劣、软因子小、振荡阶跃严重的情况,本文根据PIN二极管反向恢复机理,对出现的失效案例进行原因分析,并提出改进措施,为产品可靠运行提供了保障。     

快速软恢复二极管局域寿命控制数值分析

采用混合器件模型研究了局域寿命控制技术对快速软恢复功率二极管静态和动态特性的影响，模拟结果表明，低寿命区的最佳位置处于基区靠近阳极，其最佳宽度取决于载流子寿命减少的数量。     

Design of a SiGe-Si quantum-well optical modulator

A light modulator consisting of modulation-doped SiGe-Si multiple quantum wells integrated in a silicon-on-insulator waveguide is designed. The device is based on the electrorefractive effect due to the variation of holes density in the SiGe wells, induced by applying a reverse bias on a PIN diode. This mechanism is simulated by numerical calculations of the hole distribution coupled with the optical guided mode propagation characteristics. The mode effective index variation of TE-polarized light at the 1.31-/spl mu/m wavelength can then be obtained as a function of the applied bias. The influences of the structure parameters such as the thickness and the doping level of the doped barrier layers or the number of SiGe wells is analyzed thanks to a design of experiment method. The optimization gives an effective index variation of 2.10/sup -4/ for an applied bias voltage of 6 V. To obtain optical intensity modulation, this structure has to be included in a Fabry-Perot cavity. The modulation performances are analyzed.     

Electron transport properties of electrically doped guanine nano-sheet based bio-Zener diode: a first principle paradigm

The quantum ballistic transmission properties of an electrically-doped guanine-nanosheet-based bio-Zener diode are investigated using density functional theory and nonequilibrium Green’s function-based first-principles calculations. The bio-Zener diode is gate-bias modulated, and its various quantum-electronic properties, for example, the V–I characteristic, the transmission spectra, and the device density of states, depend on both the electrical doping concentration and on the applied gate bias voltage. The junctionless highly doped bio-Zener diode shows high levels of reverse-bias current which is dominated by majority charge carriers. It is also found that, due to the presence of a wide bandgap and the backscattering effect, the forward-bias current is highly suppressed. The quantum simulation results confirm a strong reverse gate-bias-modulated biased current–voltage response as well as a charge transport phenomenon through the effective device region. The bio-Zener diode exhibits a specific reverse breakdown that can be varied from ?0.78 to ?3.2 V without affecting the forward current–voltage characteristic. The current findings are obtained by including the coherent tunneling and incoherent hopping processes with a minimal Hamiltonian model approach.

     

反激变换器中RCD箝位电路的分析与设计

着重考虑现有文献中被忽略的因素,如箝位二极管正、反向恢复特性和副边漏感Ls对RCD参数设计的影响等,分析了二极管的正向恢复对开关管电压尖峰的影响、反向恢复对RCD箝位电路损耗和参数设计的影响,揭示出副边漏感与原边漏感一样会增加RCD箝位电路吸收的能量,并进行了量化分析。综合考虑了二极管正向恢复特性、反向恢复特性以及副边漏感对RCD箝位电路的影响,在现有RCD参数设计方法的基础上,提出了修正后的RCD参数设计方法。仿真和实验结果验证了理论分析的正确性和设计方法的可行性。     

A novel slip‐power recovery system using a PWM boost rectifier

A novel compact slip‐power recovery system having sinusoidal rotor currents is proposed. In this system, a PWM boost rectifier is used as a substitute for a diode rectifier and a boost chopper in a conventional compact slip‐power recovery system. The conventional compact system has the disadvantage that it has a rectangular rotor current, and a motor torque with large ripple, because a diode rectifier remains in the system. Also, the rotor current cannot reach the current reference value near the synchronous speed, because the voltage drop caused by the resistance of the semiconductor devices and so on cannot be neglected when the rotor voltage becomes smaller near the synchronous speed. The use of the system proposed in this paper has solved these problems. The effectiveness of the proposed system was verified through computer simulations and experiments. As a result, the proposed system brings the sinusoidal rotor current, the small torque ripple, and wide controllable range near the synchronous speed. © 2002 Scripta Technica, Electr Eng Jpn, 139(2): 52–60, 2002; DOI 10.1002/eej.10012