LED点阵屏控制卡的研制

研制了一种基于STM32的LED点阵屏控制器,采用STM32单片机进行控制,运用PC上位机软件将串口通信传输数据传至STM32控制卡下位机,驱动LED点阵广告屏显示,实现了对LED点阵屏的简便控制,满足了设计要求。实验表明该方法是行之有效的。     

基于FPGA的LED点阵触摸显示屏的设计

文中所述设计给出了基于Altera公司CycloneII系列EP2C5T144FPGA芯片设计的LED点阵手写显示屏基本原理与实现方案。该系统由32x32LED点阵屏、点阵屏驱动电路、光电手写笔、键盘、模式与坐标显示板和主控制器组成。系统以主控制器为核心,控制LED点阵屏在微亮和全亮间切换,当光电笔在屏上划过时先由微亮信号获取屏的行列坐标,再根据实际功能需要决定是否将该点LED完全点亮为常态．从而在LED屏上实现点亮、划亮、反显、整屏擦除、笔画擦除、写多字等触模屏实现的功能。     

基于LabVIEW与单片机的多功能LED点阵显示屏设计

设计的多功能LED点阵显示屏由上位机和下位机两部分组成。上位机利用LabVIEW从计算机的汉字库中提取汉字字模并转化为十六进制字模数据,并在Lab VIEW中进行图像扫描得到相应汉字的字模,经串口传给下位机以驱动LED点阵显示屏显示相应的汉字;下位机的硬件部分由时钟电路、LED点阵屏显示电路、温度采集电路以及主控制器等部分组成,能够实现汉字、温度和时间的显示。该系统具有修改显示内容方便,显示稳定,亮度清晰等特点,因此具有很高的应用价值。     

LED点阵书写显示屏的系统设计

介绍了一种AVR单片机控制的LED点阵书写显示屏。该系统以ATmega16单片机为控制器,16个8×8 LED点阵模块组成的32×32 LED点阵模块为显示屏,感光性能优良的光电三极管为完成信号采集功能的光笔,多片级联的锁存移位寄存器74HC595为点阵屏的驱动器,实现了点亮、划亮、反显、整屏擦除、笔画擦除、连写多字等书写显示功能。     

模块化LED点阵广告屏实训装置设计

LED点阵广告屏作为信息的发布显示工具,在各种公共场所得到了广泛应用。文章介绍了一种利用嵌入式单片机作为控制核心的LED点阵广告屏实训装置的设计,旨在提升高职学生掌握点阵屏的设计与组装能力。该装置为可上下左右级联的16×16 LED点阵模组,将移位寄存器74HC595作为行列驱动模块,可实现积木式扩展连接。该装置在实践教学环节中取得了较好的应用效果。     

基于单片机的异步LED显示系统设计

为了满足更多用户需求,实现显示屏使用的简单化,设计了一套由控制器、单元板及上位机显示管理系统组成的异步LED显示控制系统。系统中下位机采用以STC89C52RC单片机为处理器的控制器,对LED显示屏的显示方式、亮度、时间等进行控制;屏体采用单元板拼接的方式构成,单元板由3.75双色点阵显示模块及行列驱动器件构成,大小为6432点;上位机显示管理系统可实现显示数据、显示方式、内容等。通过实际的安装与测试表明,该系统具有较高的可靠性和稳定性;在显示方式上可以实现左移、上移、翻屏等多种显示方式。     

可更新的汉字点阵显示系统上位机设计

介绍了一款以PC机为控制器的LED点阵显示系统的上位机设计。上位机发送控制命令,下位机接收并处理控制命令,由显示驱动模块驱动LED点阵显示屏的扫描显示。该系统可实现中英文字符显示、字符滚动、字体设置并可根据实际需求实现任意规格LED点阵的拼装。系统经试验后运行稳定,功耗低,且有很大的扩展空间。     

亮度可调的LED点阵书写显示屏的设计与制作

基于AT89C52主控制器芯片,搭建16×16点阵LED书写显示屏的硬件平台并采用模块化的编程方法,设计点阵显示屏书写功能的软件系统。实际制作和测试结果表明,LED点阵显示屏的亮度等级可以进行调节,实现了"点亮"、"划亮"、"整屏擦除"、"正常显示"、"反相显示"、"笔画擦除"等书写显示功能,起到了节能环保的功效。     

信息的窗口——数码显示屏

本文通过2个8×8LED点阵显示模块（以下简称点阵块）组成的16×8数码点阵显示屏（以下简称点阵屏）显示各种数字、字符来学习PIC单片机的I／O口结构特点及其使用方法,图1所示是用这个点阵屏来显示3456的示意效果。     

一种多功能可擦写式LED点阵显示屏的研制

LED显示屏通常由计算机控制要显示的文字,但其硬件和使用成本都相对较高。设计并制作了一种多功能可擦写式LED点阵显示屏,系统采用STC11F16XE单片机作为主控芯片,用74LS245芯片与CD4515BC译码器组成显示驱动。实现了通过按键切换各种显示模式;利用光电传感器制作的光笔在LED点阵显示屏上可实现如点亮、划亮、反显、整屏擦除、笔画擦除、连写多字等显示功能,并且可以自动调节亮度和自动休眠。实验证明,利用该系统可以扩展成不同大小、内容可随时修改的LED显示屏,并且成本低,具有良好的推广价值。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.