Al_2O_3颗粒对Al-Zn合金激光快凝组织的影响

通过比较Ａｌ－Ｚｎ合金和Ａｌ_２Ｏ_（３ｐ）／Ａｌ－Ｚｎ复合材料的激光重熔组织。分析Ａｌ_２Ｏ_３颗粒对Ａｌ－Ｚｎ合金激光快凝组织的影响规律。实验结果表明,Ａｌ_２Ｏ_３颗粒可以显著细化激光熔区的晶粒。基于凝固界面与颗粒交互作用的理论分析,给出了晶粒细化的临界条件。     

MmNi5-基储氢合金扫描电镜能谱仪定量分析

使用配备ＥＤＳ的ＳＥＭ,研究了ＭｍＮｉ５－基储氢合金的微观组织和微区成分。研究的合金中稀土元素含量低于化学比,晶界有Ｃｏ,Ｍｎ和Ａｌ富集相析出。分别使用ＲｅＢ６、ＲｅＰ５Ｏ和纯稀土金属作为分析稀土元素的标样进行定量分析。结果表明,全部采用纯金属标样（包括纯稀土金属标样）分析结果最好;采用ＲｅＢ６和ＲｅＰ５Ｏ１４作为分析稀土的标样时,分析误差较大。文章对误差较大的产生原因进行了讨论。     

激光表面快速熔凝过程中熔区组织重构

利用晶体生长的最小过冷度判据,对单晶合金激光重熔区组织的生长速度进行了分析,建立了枝晶尖端生长速度与激光束扫描速度和固液界面前进速度的关系.根据此分析对熔池进行了重构和预测,发现激光熔池中枝晶组织的生长方向强烈地受基材晶粒取向和激光束扫描方向的影响.枝晶生长条件下,择优取向对枝晶生长方向的影响要较热流的影响大.理论预测与实验结果相吻合.     

钛合金的激光气体氮化研究

本研究了Ｔｉ－６Ａｌ－４Ｖ合金的激光气体氮化，试验结果表明在激光功率密度大于５．０×１０＾４Ｗ／ｃｍ＾２，氮气压力为０．４ＭＰａ，通过激光辐射可在Ｔｉ－６Ａｌ－４Ｖ合金表面形成氮化钛。其氮化层的厚度为４００μｍ。在氮化层中存在大量氮化钛枝晶。其平均二次枝晶间距为１．７７μｍ。细小的氮化钛枝晶均匀地分布在氮化层中。最后测定和分析了氮化层的显微组织、相成份和显微硬度，并讨论了氮化钛的形成过程。     

类氖离子AlⅣ－XVI2s~2p~54f，5f能级跃迁的理论研究

类氖离子ＡｌⅣ－ＸＶＩ２ｓ~２ｐ~５４ｆ，５ｆ能级跃迁的理论研究陈宏善，赵仪，董晨钟（西北师范大学物理系，兰州７３００７０）最近，我们用相对论组态相互作用方法详细分析了类氖离子ＡｌⅣ－ＭｎＸＶ２ｓ２ｐ~６３ｌ与２ｓ~２２ｐ~５ｎｌ（ｎ＝４，５，６）之间的?..     

RuO_2－Ag低阻浆料中掺入MnO_2、V_2O_5杂质改善电阻特性

ＲｕＯ_２－Ａｇ低阻浆料中掺入ＭｎＯ_２、Ｖ_２Ｏ_５杂质改善电阻特性宋兴义（昆明贵金属研究所昆明６５０２２１）为了改善ＲｕＯ２－Ａｇ系低阻浆料的电阻温度系数，大多采用在电阻浆料中掺入表１掺ＭｎＯ２的ＲｕＯ２－Ａｇ电阻浆料配方ＭｎＯ２、Ｖ２Ｏ５、Ｎｂ２Ｏ...     

激光重熔熔池宏微观凝固过程的实时观察

采用类金属透明模型合金SCN-Eth合金, 在自主搭建的激光熔池凝固过程宏微观实时观察平台上, 研究了激光重熔过程中熔池宏微观形态演化规律。研究发现, 随着激光束扫描的进行, 熔池及其热影响区的宏观形态都先从圆形变为椭圆形, 最后演化为尾部呈“V”形的泪滴状。随着激光功率的增加, 稳态熔池长度L、宽度W、尾部夹角α均增加; 随着扫描速度的增大, 稳态熔池长度L、宽度W、夹角α均减小; 熔池长宽比随功率的增加而增大, 随扫描速度的增加先增大后减小。从熔池中部到熔池尾部液固界面形貌依次呈平面→胞晶→枝晶演化, 胞晶和枝晶一次间距不同, 浅胞间距约为28 μm, 深胞间距约为42 μm, 枝晶间距约为65 μm, 胞枝晶一次间距沿固液界面增大。     

热处理对96.5Sn3.5Ag焊点中Cu-Sn合金层的影响

在焊点与铜基之间形成的Ｃｕ－Ｓｎ合金成分对表面安装器件的疲劳寿命起着关键性的作用。本文着重研究了９３．５Ｓｎ３．５Ａｇ（简写为Ｓｎ－Ａｇ）焊料与Ｃｕ基界面间形成的合金层,通过电子扫描显微镜（ＳＥＭ）,Ｘ衍射（ＸＤＡ）及能谱Ｘ射线（ＥＤＸ）等分析发现,在Ｓｎ－Ａｇ与Ｃｕ基界面上存在Ｃｕ６Ｓｎ５及Ｃｕ３Ｓｎ两种合金成分,且随着热处理时间增加,Ｃｕ６Ｓｎ５合金层增厚,并在该处容易出现裂纹而导致焊点强度减弱,从而使焊点产生疲劳失效。     

激光表面熔覆SiCp/Ni-Cr-B-Si-C涂层的组织演化及其相确定

运用激光熔覆技术在ＡＩＳＩ１０４５钢表面制备了３０ｖｏｌ－％ＳｉＣｐ／Ｎｉ－Ｃｒ－Ｂ－Ｓｉ－Ｃ涂层。ＳＥＭ和ＴＥＭ观察分析表明：ＳｉＣｐ在熔覆过程中完全溶解;涂层结合区组织为共晶结构;涂层组织由初生石墨球Ｇ,分布在γ－Ｎｉ固溶体枝晶中的Ｍ２３（Ｃ,Ｂ）６细小网状树枝晶以及少量Ｎｉ＋Ｎｉ３（Ｂ,Ｓｉ）层片状共晶组成;Ｓｉ在Ｎｉ固溶体中的固溶度显著增大,高达１４．４１ｗｔ－％;Ｍ２３（Ｃ,Ｂ）６含有高密度堆垛层错;Ｎｉ３（Ｂ,Ｓｉ）相具有长周期结构。     

ZnO导电陶瓷的制备及其性能表征

本文利用化学共沉淀法分别制得Ｚｎ５（ＣＯ３）２（ＯＨ）６掺杂Ａｌ（ＯＨ）３、Ｍｇ（ＯＨ）２以及Ｚｎ５（ＣＯ３）２（ＯＨ）６掺杂Ｓｂ（ＯＨ）３、Ｂｉ（ＯＨ）３、Ｓｎ（ＯＨ）４、Ｃｏ（ＯＨ）３、ＭｎＯ（ＯＨ）２两种复合粉体,利用高频等离子体焙解新工艺,制得了纳米ＺｎＯ及相应的添加剂陶瓷复合粉体．ＴＥＭ分析结果表明：两种陶瓷复合粉体的粒径均小于１００ｎｍ．利用前者,通过添加适当的Ａｌ２Ｏ３和ＭｇＯ,制备出了电阻率约１０～２０００Ω·ｃｍ,Ｖ－Ｉ特性较好的ＺｎＯ线性陶瓷电阻．利用后者,通过适当的杂质配比,在１００     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.