Dielectric and Ferroelectric Properties of Nanocrystalline Bi2Ti2O7 Prepared by a Metallorganic Decomposition Method

Nanopowders of Bi₂Ti₂O₇ were synthesized by a metallorganic decomposition (MOD) technique. Pure Bi₂Ti₂O₇ nanocrystals formed after annealing at 550°C for 5 min. X-ray patterns show that Bi₂₀TiO₃₂ is a metastable phase during Bi₂Ti₂O₇ formation. It was found that there were two peaks in the curves of the dielectric response as a function of temperature for pressed nanocrystalline Bi₂Ti₂O₇ samples. The Curie temperature decreases with decrease of grain size whereas the ferroelectric-ferroelectric phase transition temperature increases. The hysteresis loops observed also suggest that Bi₂Ti₂O₇ might belong to a ferroelectric material.     

Preparation of Bi4Ti3O12 Powders in the Presence of Molten Salt Containing LiCl

The reaction between Bi₂O₃ and TiO₂ in molten LiCl-KCl was examined with special emphasis on the reaction mechanism and the size of Bi₄Ti₃O₁₂ particles. The oxides reacted with LiCl to form an intermediate compound, which changed into Bi₄Ti₃O₁₂ on extended heating. Potassium chloride retarded the reaction between the oxides and LiCl and promoted the change from the intermediate compound to Bi₄Ti₃O₁₂. Bi₄Ti₃O₁₂ particles prepared in the flux were platelike, irrespective of the preparation conditions, but their size depended on reaction temperature and time, the ratio of LiCl to KCl, and the amount of flux.     

The System TiO2-Bi2Ti4O11

The system TiO₂-Bi₂Ti₄O₁₁ was examined by Raman spectroscopy and X-ray diffraction to determine whether TiO₂ is soluble in Bi₂Ti₄O₁₁. The Raman spectral data obtained from preparations made at ∼ 1050°C and cooled to room temperature led us to conclude that TiO₂ is not soluble in the "high-temperature" form of Bi₂Ti₄O₁₁. It was also found that extensive grinding of the phase identified as the "high-temperature" form converts it to the "low-temperature" form, stable below 250°C.     

Effects of Excess Bi2O3 on the Ferroelectric Behavior of Nd-Doped Bi4Ti3O12 Thin Films

Effects of excess Bi₂O₃ content on formation of (Bi_3.15Nd_0.85)Ti₃O₁₂ (BNT) films deposited by RF sputtering were investigated. The microstructures and electrical properties of BNT thin films are strongly dependent on the excess Bi₂O₃ content and post-sputtering annealing temperature, as examined by XRD, SEM, and P – E hysteresis loops. A small amount of excess bismuth improves the crystallinity and therefore polarization of BNT films, while too much excess bismuth leads to a reduction in polarization and an increase in coercive field. P – E loops of well-established squareness were observed for the BNT films derived from a moderate amount of Bi₂O₃ excess (5 mol%), where a remanent polarization 2P _r of 25.2 μC/cm² and 2E _c of 161.5 kV/cm were shown. A similar change in dielectric constant with increasing excess Bi₂O₃ content was also observed, with the highest dielectric constant of 304.1 being measured for the BNT film derived from 5 mol% excess Bi₂O₃.     

Comment on "Effect of Al2O3 and Bi2O3 on the Formation Mechanism of Sn-Doped Ba2Ti9O20"

in a recent article of the Journal , Yu et al .¹ reported their experimental results on the effect of Al₂O₃ and Bi₂O₃ on the formation mechanism of Sn-doped Ba₂Ti₉O₂₀. They claimed that both Al₂O₃ and Bi₂O₃ can dramatically assist the formation of Sn-doped Ba₂Ti₉O₂₀ but are based on different mechanisms. They concluded that first, Bi₂O₃ melts above 830°C and accelerates the migration of the involved reactants to form Ba₂Ti₉O₂₀; second, Al₂O₃ can reduce the height of the potential energy barrier of the formation of Ba₂Ti₉O₂₀ due to the intergrowth of BaAl₂Ti₆O₁₆ phase. They explained their results from a point of view that the formation of Ba₂Ti₉O₂₀ is controlled by (1) the migration of reactants to the interfaces and (2) the height of the potential-energy barrier of the reaction at the interfaces. However, based on their results, we feel their conclusions are incautious and may be misleading, as will be discussed later.     

Ferroelectric Thin Films of Bismuth-Containing Layered Perovskites: Part I, Bi4Ti3O12

Ferroelectric thin films of bismuth-containing layered perovskite Bi₄Ti₃O₁₂ have been fabricated by a metalorganic decomposition (MOD) method. Crack-free and crystalline films of ∼5000 Å thickness have been deposited on Pt/Ti/SiO₂/Si substrates. Different heat treatments have been studied to investigate the nucleation and growth of perovskite Bi₄Ti₃O₁₂ crystallites. If the same composition and final annealing temperature are used, films with different orientations are obtained by different heating schedules. These films show a large anisotropy in ferroelectric properties. Theoretical considerations are presented to suggest that nucleation control is responsible for texture and grain-size evolution. Moreover, the origin of the ferroelectric anisotropy is rooted in the two-dimensional nature of layered polarization.     

Incorporation of Aliovalent Dopants into the Bismuth-Layered Perovskite-Like Structure of BaBi4Ti4O15

The solid solubility of the aliovalent dopants Fe³⁺ and Nb⁵⁺ in the BaBi₄Ti₄O₁₅ compound, a member of the family of Aurivillius bismuth-based layer-structure perovskites, has been studied using quantitative wavelength-dispersive spectroscopic microanalysis (SEM/EPMA) in combination with X-ray powder diffractometry (XRPD). The samples with nominal (starting) compositions corresponding to the chemical formulas BaBi₄Ti_{4–4 X} Fe_{4 X} O₁₅ and BaBi₄Ti_{4–4 X} Nb_{4 X} O₁₅ were prepared by hot forging a mixture of BaTiO₃ and Bi₄Ti₃O₁₂ with additions of Fe₂O₃ or Nb₂O₅ followed by a long annealing at 1100°C. The study showed that an excess charge introduced into the structure by the substitution of Ti⁴⁺ ions with aliovalent dopants was preferentially compensated by a change in the ratio of Ba²⁺ to Bi³⁺ ions in the host structure according to the general formulas of the solid solutions Ba_{1–4 X} Bi_{4+4 X} Ti_{4–4 X} Fe^'_{4 X} O₁₅ and Ba_{1+4 X} Bi_{4–4 X} Ti_{4–4 X} Nb^·_{4 X} O₁₅.     

The Effect of Deposition Temperature and Postanneal on the Bi3.63Pr0.3Ti3O12 thin Films Prepared by RF-Magnetron Sputtering Method

Praseodymium doped Bi₄Ti₃O₁₂ (BTO) thin films with composition Bi_3.63Pr_0.3Ti₃O₁₂ (BPT) were successfully prepared on Pt/Ti/SiO₂/Si substrates by RF-magnetron sputtering method at substrate temperatures ranging between 500° and 750°C. The structural phase and orientation of the deposited films were investigated in order to understand the effect of the deposition temperature on the properties of the BPT films. As the substrate temperature was increased to 700°C, the films started showing a tendency of assuming a c -axis preferred orientation. At lower temperatures, however, polycrystalline films were formed. The Pt/BPT/Pt capacitor showed an interesting dependence of the remnant polarization (2 P _r) as well as dc leakage current values on the growth temperature. The film deposited at 650°C showed the largest 2 P _r of 29.6 μC/cm². With the increase of deposited temperature, the leakage current densities of films decreased at the same applied field and the film deposited at 750°C exhibited the best leakage current characteristics. In addition, the ferroelectric fatigue and Raman measurements were carried out on the as-prepared, postannealed in air and postannealed in oxygen BPT films. It was revealed that the BPT film postannealed in air exhibited the weakest fatigue-resistance characteristics and highest frequency shifted Raman vibration modes, indicating the highest oxygen vacancy concentration in this film.     

Effect of Al2O3 and Bi2O3 on the Formation Mechanism of Sn-Doped Ba2Ti9O20

High-performance Ba₂Ti₉O₂₀ ceramics are attracting great attention, but their formation mechanism still is somewhat unclear. The present investigation shows that the formation of Ba₂Ti₉O₂₀ can be promoted strikingly by the participation of Bi₂O₃ and Al₂O₃. The effect of Bi₂O₃ on the formation of Ba₂Ti₉O₂₀ is attributed to the fact that migration of the involved reactants is accelerated by liquid which forms from the melting of Bi₂O₃ above 830°C. This migration, however, is not the only rate-limiting factor. A high potential-energy barrier, resulting from stress that arises along the crystal-structured layers, also heavily restricts the formation of Ba₂Ti₉O₂₀. The participation of Al₂O₃, on the other hand, can reduce the height of this potential-energy barrier and effectively improve the kinetics of the formation of Ba₂Ti₉O₂₀ by causing the formation of BaAI₂Ti₆O₁₆ crystals; these crystals intergrow with Ba₂Ti₉O₂₀ crystals and result in decreased stress.     

Nd/V Co-Doped Bi4Ti3O12 Powder Prepared By Molten Salt Synthesis

Powders of Nd/V-doped Bi₄Ti₃O₁₂ with a composition Bi_3.74Nd_0.26Ti_2.98V_0.02O_12.01 (BNTV), prepared by the molten salt synthesis, using chlorides as the fluxes, were successfully obtained. The influences of the molar ratio of KCl to NaCl, temperature, and soak time on the formation and morphology of BNTV were investigated. The results indicated that Na⁺ can enter the lattice of Bi₄Ti₃O₁₂ (BIT), leading to a decrease in the cell dimensions of BIT phase. The grain size and morphology of BNTV powders were considerably affected by the molar ratio of KCl to NaCl in the fluxes, in which the platelets showed the morphology of a rectangle and no regular shape in KCl and NaCl fluxes, respectively. The grain size of BNTV increased with increasing amount of NaCl in the fluxes, but the thickness decreased. The platelets prepared in the NaCl flux were faceted along (0 0 1) plane.     

Extended Defects in ZnO Ceramics Containing Bi4Ti3O12 Additive

Extended defects in ZnO ceramics containing, 6 wt% Bi₄Ti₃O₁₂ were studied by analytical electron microscopy. Apart from basal plane condensation stacking faults, which are also present in as-received ZnO, extended defects related to the presence of Bi₄Ti₃O₁₂ were observed. In samples sintered at 900°C they lie in the basal or in the prismatic     planes and they quite often form closed loops, whereas they form serpentine-shaped boundaries in samples sintered at 1200°C. Evidence is given that they are inversion boundaries. Their TEM image characteristics, as well as the unambiguous presence of Ti at the boundaries, suggest that they are formed due to the presence of 2-D coherent precipitates of Ti-rich (possibly Zn₂TiO₄-type spinel) phase.     

Synthesis and Structural, Ferroelectric, and Piezoelectric Properties of SrBi4Ti4O15 Ceramics

SrBi₄Ti₄O₁₅ ceramics were prepared via ordinary firing (OF) and hot forging (HF). Characterization using scanning electron microscopy and X-ray diffractometry shows platelike grains that were highly oriented ( F = 0.95) after hot forging. Ferroelectric, dielectric, and piezoelectric characterizations revealed that polarization reorientation was restricted to the ab plane of the orthorhombic structure, parallel to the (Bi₂O₂)²⁺ layers. The thickness coupling factor for OF samples was only half that for HF samples oriented parallel to the HF direction (in the ab-plane), as a consequence of poling restrictions in randomly oriented grains.     

Effect of La Doping on the Phase Conversion, Microstructure Change, and Electrical Properties of Bi2Fe4O9 Ceramics

Undoped and La-doped Bi₂Fe₄O₉ ceramics were synthesized using a soft chemical method. It is observed that in calcining La-doped Bi₂Fe₄O₉, Bi(La)FeO₃ phase rather than Bi_{2− x} La _x Fe₄O₉ gradually increases with increasing La doping content. The phase conversion from mullite-type structure of Bi₂Fe₄O₉ to rhombohedrally distorted perovskite one of Bi(La)FeO₃ with increasing La doping content indicates that La doping can stabilize the structure of BiFeO₃. This is further evidenced that Bi₂Fe₄O₉ can be directly converted to Bi(La)FeO₃ by heating the mixtures of nominal composition of Bi₂Fe₄O₉/ x La₂O₃. Furthermore, the microstructure changes and the room temperature hysteresis loops and leakage current for Bi_{2− x} La _x Fe₄O₉ with x =0 and 0.02 were characterized.     

Bi4Ti3O12 Ceramics from Powders Prepared by Alternative Routes: Wet No-Coprecipitation Chemistry and Mechanochemical Activation

The processing of ferroelectric Bi₄Ti₃O₁₂ ceramics from powders prepared by wet no-coprecipitation chemistry (WNCC) and mechanochemical activation (MCA) has been investigated. Dense ceramics were obtained at sintering temperatures as low as 900°C. Exaggerated grain growth was observed for samples from WNCC, but not for those from MCA. Dielectric properties are discussed in relation to the type and concentration of defects, which is smaller for ceramic samples from WNCC. The activation energy of the dielectric relaxation for ceramics from MCA suggests that additional V _O^•• are present at the pseudoperovskite [Bi₂Ti₃O₁₀]²⁻ block in this case.     

Lead-Free SrBi4Ti4O15 and Bi4Ti3O12 Material Fabrication Using the Microwave-Assisted Molten Salt Synthesis Method

In this paper, the microwave-assisted molten salt method (MAMSS) and molten salt method (MSS) were used to synthesize SrBi₄Ti₄O₁₅ (SBT). The phase constitution was determined by powder X-ray diffraction and the microstructure of powder was examined by scanning electron microscopy. In contrast to the conventional MSS method, MAMSS produces more distinct plate-like grains and synthesizes both SBT and Bi₄Ti₃O₁₂ (BTO) at 600°C with a 30-min soaking time. The increase of temperature and soaking time can make the plate-like grains of BTO more distinct.     

Subsolidus Phase Equilibria in the System Bi2O3-TiO2-Nb2O5

The subsolidus phase equilibria in the system Bi₂O₃-TiO₂-Nb₂O₅ at 1100°C were determined by solid-state reaction techniques and X-ray powder diffraction methods. The system was found to contain 4 ternary compounds, i.e. Bi₃TiNbO₉, Bi₇Ti₄NbO₂₁, a cubic pyrochlore solid solution having a compositional range of 3Bi₂O₃· x TiO₂ (7– x )Nb₂O₅ where x ranges from 2.3 to 6.75, and an unidentified phase, 4Bi₂O₃·11TiO₂·5Nb₂O₅.     

Factors Affecting the Electrical Conductivity of Donor-Doped Bi4Ti3O12 Piezoelectric Ceramics

High-temperature piezoelectric ceramics based on W⁶⁺-doped Bi₄Ti₃O₁₂ (W-BIT) were prepared by both the conventional mixing oxides and the chemical coprecipitation methods. Sintering was carried out between 800° and 1150°C in air. A rapid densification, >99% of the theoretical density (rho_th) at 900°C/2 h, took place in the chemically prepared W⁶⁺-doped Bi₄Ti₃O₁₂ ceramics, whereas conventionally prepared BIT-based materials achieved a lower maximum density, ∼94% of rho_th, at higher temperature (1050°C). The microstructure study revealed a platelike morphology in both materials. Platelike grains were larger in the conventionally prepared W-BIT-based materials. The sintering behavior could be related both to the agglomeration state of the calcined powders and to the enlargement of the platelets at high temperature. The W⁶⁺-doped BIT materials showed an electrical conductivity value 2-3 orders of magnitude lower than undoped samples. The electrical conductivity increased exponentially with the aspect ratio of the platelike grains. The addition of excess TiO₂ produced a further decrease of the electrical conductivity.     

Diffuse Ferroelectric Phase Transition and Relaxor Behaviors in Ba-Based Bismuth Layer-Structured Compounds and La-Substituted SrBi4Ti4O15

The dielectric characteristics of BaBi₂Nb₂O₉, BaBi₄Ti₄O₁₅, BaBi₈Ti₇O₂₇, and La-substituted SrBi₄Ti₄O₄ were investigated to discuss their ferroelectric phase transition and relaxor behaviors. BaBi₂Nb₂O₉ showed typical relaxor behaviors, and a shift of T _m with increasing frequency was observed in BaBi₄Ti₄O₁₅ and SrBi_{4− x} La _x Ti₄O₁₅ ( x =0.8, 1.0) but they underwent a real paraelectric–ferroelectric phase transition on zero-field cooling, while BaBi₈Ti₇O₂₇ showed a normal ferroelectric nature. The reduced concentration and weakened coupling of the dipoles related to A-site bismuth are believed to be responsible for the appearance of short-range electric ordering and the relaxor behaviors in these bismuth layer-structured compounds.     

Novel Plutonium Titanate Compounds and Solid Solutions Pu2Ti2O7-Ln2Ti2O7: Relevance to Nuclear Waste Disposal

The compounds SrPu₂Ti₄O₁₂, Pu₂Ti₃O_8.79, and Pu₂Ti₂O₇, where plutonium is in the (III) oxidation state, were prepared and identified via X-ray diffraction (XRD). The solid solubility limit of Pu₂Ti₂O₇ in Ln₂Ti₂O₇ (Ln = Gd, Er, or Lu) was also studied via XRD; it was determined that the solubility of Pu₂Ti₂O₇ increased as the radius of the lanthanide ion in the host compound decreased. Attempts to synthesize Sr₂Pu₂ Ti₅O₁₆ and Sr₂Ce_2–yPu_yTi₅O₁₆ solid solutions, where plutonium is in the (IV) oxidation state, were unsuccessful.     

Ferroelectric Thin Films of Bismuth-Containing Layered Perovskites: Part II, PbBi2Nb2O9

Ferroelectric thin films of bismuth-containing layered perovskite PbBi₂Nb₂O₉ have been prepared by a metalorganic decomposition (MOD) method. Random and highly c-oriented films of the same starting composition have been obtained under different intermediate- and high-temperature heat treatments. A comparison of their crystallization and properties with those of Bi₄Ti₃O₁₂ films reveals similar trends that are common to bismuth-containing Aurivillius compounds. Heterogeneous nucleation of the perovskite phase either on the pyrochlore (444) plane because of lattice matching or on the substrate surface because of lower interfacial energy is proposed as the cause of orientation selection during crystallization. The different thickness of the pseudoperovskite subunits in these layered compounds may be responsible for the systematic difference in the anisotropic ferroelectric properties. Smaller polarization and higher coercive field are expected for PbBi₂Nb₂O₉, which has thinner pseudoperovskite units than Bi₄Ti₃O₁₂.