方形半导体量子线中光吸收的横向斯塔克效应

The ground and few excited states of the electrons confined in a square GaAs quantum wire(QW) subjected to an external transverse electric field are investigated using the finite difference method within the effective-mass approximation. When the transverse electric field is applied along a side of the square quantum wire, the calculation of the eigenstates of the quantum wire has an exactly solvable problem whose solutions involve the linear combinations of two independent Airy functions. Compared with the exact analytical results using Airy functions, the results obtained by the use of the finite difference method in terms of the eigenstates of the particle in the QW are in excellent agreement. Subsequently, it is considered that the eigenstates of the particle depend on the orientations of the electric field with respect to the center axis of the QW. It is interesting that the peak value of the energy is found for the field directed along the diagonal in the QW, which can lead to a large energy shift. Meanwhile, dependence of the optical absorption phenomenon in the square QW on the optical field and applied electric field is investigated. It is shown that the optical absorption spectrum depends highly upon the polarization of the optical field and the applied electric field intensities and orientations.     

Fe/(Ga,Mn)As异质结的界面结构和磁性质

Fe/（Ga,Mn）As heterostructures were fabricated by all molecular-beam epitaxy.Double-crystal X-ray diffraction and high-resolution cross-sectional transmission electron micrographs show that the Fe layer has a well ordered crystal orientation and an abrupt interface.The different magnetic behavior between the Fe layer and（Ga, Mn）As layer is observed by superconducting quantum interference device magnetometry.X-ray photoelectron spectroscopy measurements indicate no Fe₂As and Fe-Ga-As compounds,i.e.,no dead magnetic layer at the interface, which strongly affects the magnetic proximity and the polarization of the Mn ion in a thin（Ga,Mn）As region near the interface of the Fe/（Ga,Mn）As heterostructure.     

Transmission Properties of Radar Wave through Reentry Plasma Sheath

In this paper,by taking into account the coupling of the ionization of ablation gas and atmosphere,an electrons density distribution model is built. Using this model,the transmission properties of different polarization radar wave through sheath are evaluated on the basis of the transmission matrix theory. Then,we discuss the effects of the electrons density,the added magnetic field,and the radar wave frequency on the transmission properties. As a result of this investigation,greater transmission power could be gained in order to efficiently shorten communication blackout,by reducing the electrons density or choosing proper added magnetic field and the frequency of the radar wave according to the different polarization form of the radar wave.     

Investigation of Properties of Motion of Superconductive Electrons in Superconductors by Nonlinear Quantum Mechanical Theory

The properties and rules of motion of superconductive electrons in steady and time-dependent non-equilibrium states of superconductors are studied by using the Ginzberg-Landau （GL） equations and nonlinear quantum theory. In the absence of external fields, the superconductive electrons move in the solitons with certain energy and velocity in a uniform system, The superconductive electron is still a soliton under action of an electromagnetic field, but its amplitude, phase and shape are changed. Thus we conclude that superconductivity is a result of motion of soliton of superconductive electrons. Since soliton has the feature of motion for retaining its energy and form, thus a permanent current occurs in superconductor. From these solutions of GL equations under action of an electromagnetic field, we gain the structure of vortex lines-magnetic flux lines observed experimentally in type-Ⅱ superconductors. In the time-dependent nonequilibrium states of superconductor, the motions of superconductive electrons exhibit still the soliton features, but the shape and amplitude have changed. In an invariant electric-field, it moves in a constant acceleration. In the medium with dissipation, the superconductive electron behaves still like a soliton, although its form, amplitude, and velocity are altered. Thus we have to convince that the superconductive electron is essentially a soliton in both non-equilibrium and equilibrium superconductors.     

Evolution of Electron Phase Orbits of Multi-photon Nonlinear Compton Scattering in High Power Laser-plasma

The evolution of the electron phase orbits based on the multi-photon nonlinear Compton scattering with the high power laser-plasma is discussed by using Kroll-Morton-Rosenbluth theory. The random evolution of the un-captured electron phase orbits from periodicity to non-periodicity is found after the energy has been exchanged between the electron and photons. With the increase of the absorbed photon number n by an electron,this evolution will be more and more intense, while which is rapidly decreased with the enhancement of the collision non-flexibility ξ and their initial speeds of the electrons and photons, but this evolution is lower than that in the high power laser field. When the electrons are captured by the laser field, the evolution is finished, and the electrons will stably transport, and the photons don‘t provide the energy for these electrons any more.     

Supercontinuum Generation Enhanced by Cross-phase Modulation in Dispersion-flattened and Decreasing Fiber

Supercontinuum spectrum generation in a dispersion-flattened and decreasing fiber with two orthogonally polarized pulses was simulated and calculated. The research results indicated that the supercontinuum spectrum generated by two orthogonally polarized pulses is wider and flatter than that generated by single polarized pulse due to cross-phase modulation. The cross-phase modulation effect can enhance the supercontinuum spectrum generation. When the pump power of the input pulse is lower, the enhancement of supercontinuum spectrum generation by cross-phase modulation effect is more significant.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer.This technique usually requires that only one polarization mode is excited.However,in practical measurement,the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF,so the influence of the polarization extinction ratio should be considered.Based on the polarization coupling theory,the influence of the incident polarization extinction on the measurement result is evaluated and analyzed,and a method for distributed polariza-tion coupling detection is developed when both two orthogonal eigenmodes are excited.     

Optical fiber magnetic field sensors with peanut-shape structure cascaded with LPFG

An optical fiber magnetic field sensor for the dual-parameter simultaneous measurement is proposed and demonstrated. The sensor head is constructed by a peanut-shape structure and long period fiber grating (LPFG) coated by magnetic fluid (MF). The external magnetic field intensity can be measured by the variation of characteristic wavelength (Dip1 and Dip2) in interference spectrum since the effective refractive index of MF changes with external magnetic field intensity. When the external magnetic field intensity changes from 0 mT to 20 mT, the magnetic field sensitivities of Dip1 and Dip2 are ?0.064 nm/mT and ?0.041 nm/mT, respectively. Experimental results show that the temperature sensitivities of the Dip1 and Dip2 are 0.233 nm/°C and 0.186 nm/°C, respectively. Therefore, the simultaneous measurement of the magnetic field intensity and temperature is demonstrated based on the sensitive matrix. It has some potential applications in aerospace, environmental monitoring and medical sensing fields.     

Developing TPA Polymers to Expand Opto—electronic Applications

1 Introduction TPA (Two- photon absorption) is a process in which two photons can be simultaneously absorbed by the electron of the material and the excited electron transit to high- excited states. This process consists in the excitation of an atom or molecule from a lower quantum state s1 to an excited state s2 of the same parity as s1 in a single step. The German physicist Maria G!ppert - Mayer firstly developed the TPA theory in 1931 [1]. However, TPA phenomenon was not observed unti…     

A surface-potential-based model for AlGaN/AlN/GaN HEMT

A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor(HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas(2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.     

CHARACTERISTIC STUDY OF A FREE ELECTRON LASER WITH LINEARLY POLARIZED WIGGLER AND RECTANGULAR WAVEGUIDE

The characteristics of coherent radiation produced by a cylindrical electron beam passing through a rectangular waveguide and linearly polarized wiggler are studied. The instability analysis is based on the linearized Vlasov-Maxwell equations for the perturbations about a self-consistent beam equilibrium. The dispersion equation of TMmn mode is deduced and by making use of numerical calculation the radiation frequency and growth rate as a function of electron beam energy and radius, axial magnetic field, wiggler field and wave length are presented and discussed.     

Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2／Ar Plasma

Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl_2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/min) were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.     

Measurements of Carrier Confinement at β-FeSi2-Si Heterojunction by Electroluminescence

A Si p-π-n diode with β-FeSi2 particles embedded in the unintentionally doped Si (p－type) was designed for determining the band offset at β-FeSi2-Si heterojunction.When the diode is under forward bias,the electrons injected via the Si np－ junction diffuse to and are confined in the β-FeSi2 particles due to the band offset.The storage charge at theβ-FeSi2-Si heterojunction inversely hamper the further diffusion of electrons,giving rise to the localization of electrons in the p－Si near the Si junction,which prevents them from nonradiative recombination channels.This results in electroluminescence (EL) intensity from both Si and β-FeSi2 quenching slowly up to room temperature.The temperature dependent ratio of EL intensity of β-FeSi2 to Si indicates the loss of electron confinement following thermal excitation model.The conduction band offset between Si and β-FeSi2 is determined to be about 0.2eV.     

Prediction of semiconducting behavior in minority spin of Co2CrZ（Z=Ga,Ge,As）:LSDA

正Volume optimization was performed to obtain the theoretical lattice constants by using the generalized gradient approximation(GGA).The electronic and magnetic properties of Heusler alloys Co_2CrZ(Z = Ga,Ge, As) were investigated by using local spin density approximation(LSDA).Amongst the systems under investigation, Co_2CrGe and Co_2CrGa give 100%spin polarization at the Fermi level(E_f)- Co_2CrGe and Co_2CrGa are the most stable half-metallic ferromagnets(HMFs);their E_F lie exactly at the gap of 0.24 eV and 0.38 eV,respectively,in the spin-down channel.Even though Co_2CrAs gives a distinct and bigger gap as compared to Co_2CrGa and Co_2CrGe, its E_F is not located at the middle of the gap in the spin-down channel.We have also found that the total magnetic moments increase as the Z goes from Ga to As.The calculated density of states and band structures show the HMF character for Co_2CrGe and Co_2CrGa.     

CHAOTIC ELECTRON TRAJECTORIES IN A CIRCULAR FREE ELECTRON LASER

The motion of a relativistic electron is analyzed in the field configuration consisting of a circular wiggler magnetic field, an axial magnetic field, and the equilibrium self-electric and self-magnetic fields produced by the non-neutral electron ring. By generating Poincare surface-of-section maps, it is shown that when the equilibrium self-fields is strong enough, the electron motions become chaotic. Although the realistic circular wiggler magnetic field destroys the inte-grability of the electron motion as the equilibrium self-fields do, the role the latter plays to make the motions become chaotic is stronger than the former does. In addition, the axial magnetic field can restrain the occurrence of the chaoticity.     

Using I-V characteristics to investigate selected contacts for SnO2:F thin films

Fluorine doped tin oxide（SnO₂:F） thin films were prepared on glass substrates by the spray pyrolysis （SP） technique at different substrate temperatures between 380+480℃.The microstructure of the films was explored using scanning electron microscope observations.An investigation of selected contacts for the films was performed through the analysis of the I-V measurements which were taken in the dark at room temperature.Indium, aluminum and silver were selected as contacts where two strips of each metal were vacuum-evaporated on the surface of the film.The resistivity of the films was estimated from the linearⅠ-Ⅴplots.It was found that the smallest resistivity was obtained using silver contacts,while the largest resistivity was obtained by using indium contacts.This is because silver diffuses in the film and participates in doping,while aluminum and indium cause compensation effects when they diffuse in the film.The best linear fit parameters are those of films with aluminum contacts,and the worst ones are those of films with indium contacts.Annealing was found to improve the electrical properties of the films,especially those deposited at a low substrate temperature.This is because it is expected to encourage crystal growth and to reduce the contact potential which leads to the formation of an alloy.Annealed films are more stable than un-annealed ones.     

Magnetopolaron effects on the optical absorptions in a parabolic quantum dot

We investigate the influence of magnetic field on the linear and nonlinear optical absorptions in a parabolic quantum dot (QD) through electron-LO-phonon interaction by using the Lee-Low-Pines-Huybrecht variational calculation for all coupling strengths. We apply our calculations to GaAs which is a good candidate in Ⅲ-V group semiconductors. We find that all the absorption spectra are strongly affected by the electron-LO-phonon interaction, the applied magnetic field, and the Coulomb binding potential. Furthermore, due to the Zeeman splitting, the response of all the absorption values in transition (+1→0) and (-1→0) closely depends on the magnetic field increasing.     

MEASUREMENT OF DENSITY OF THE GAP STATES IN a-Si:H BY THE NORMALIZATION OF PHOTOCONDUCTIVITY

The spectra of the optical absorption coefficient in low absorption region are obtained by using anormalization procedure for the photoconductivity spectra.The results are explained in terms of theoptical transition of electrons from localized states in the exponential valence band tail and in danglingbond states 1.0 eV below the conduction band edge to extended conduction band states.Then thedensity of the gap states below the Fermi level E_F is obtained.From the investigation ofrecombination kineties,the average density of,the gap states over the range of(F_(F_n)-E_F)and thedensity of the gap states above the Fermi level E_F are obtained.These indicate that the width of theconduction band tail is smaller than that of the valence band tail.     

磁场作用下的一个含类氢施主杂质二维量子环中的电子能态

Using the finite element method, we investigate the lowest and first few excited state energies in a twodimensional GaAs quantum ring(QR) with a hydrogenic donor impurity and effective mass approximation under a uniform magnetic field perpendicular to the ring plane. We study in detail the dependence of the energy spectrum with different angular momentum on the inner radius, the outer radius and width of the QR, the magnetic field and impurity position. The results reveal that the electron energies increase with the inner radius while decrease with the outer radius and width of the QR; for a fixed ring, the magnetic field induces the increase of the electron energies. Moreover, the existence of impurity reduces energy levels, and the energy levels depend highly on the impurity position, which decreases as the impurity is far away from the center of the QR. Also, the dependence of the angular momentum on the energy spectrum is analyzed in detail.