Sintering behavior of ZrB2–SiC composites doped with Si3N4: A fractographical approach

ZrB₂–SiC composite ceramics were doped with 0, 1, 3 and 5 wt% Si₃N₄ plus 1.6 wt% carbon (pyrolized phenolic resin) as sintering aids and fabricated by hot pressing process under a relatively low pressure of 10 MPa at 1900 °C for 2 h. For a comparative study, similar ceramic compositions were also prepared by pressureless sintering route in the same processing conditions, with no applied external pressure. The effect of silicon nitride dopant on the microstructural evolution and sintering process of such ceramic composites was investigated by a fractographical approach as well as a thermodynamical analysis. The relative density increased by the addition of Si₃N₄ in hot pressed samples as a fully dense composite was achieved by adding 5 wt% silicon nitride. A reverse trend was observed in pressureless sintered composites and the relative density values decreased by further addition of Si₃N₄, due to the formation of gaseous products which resulted in the entrapment of more porosities in the final structure. The formation of ZrC phases in pressureless sintered samples and layered BN structures in hot pressed ceramics was detected by HRXRD method and discussed by fractographical SEM-EDS as well as thermodynamical analyses.     

Microstructure and mechanical properties of tantalum carbide ceramics: Effects of Si3N4 as sintering aid

Stoichiometric Tantalum carbide (TaC) ceramics were prepared by reaction spark plasma sintering using 0.333–2.50 mol% Si₃N₄ as sintering aid. Effects of the Si₃N₄ addition on densification, microstructure and mechanical properties of the TaC ceramics were investigated. Si₃N₄ reacted with TaC and tantalum oxides such as Ta₂O₅ to form a small concentration of tantalum silicides, SiC and SiO₂, with significant decrease in oxygen content in the consolidated TaC ceramics. Dense TaC ceramics having relative densities >97% could be obtained at 0.667% Si₃N₄ addition and above. Average grain size in the consolidated TaC ceramics decreased from 11 µm at 0.333 mol% Si₃N₄ to 4 µm at 2.50 mol% Si₃N₄ addition. The Young's modulus, Vickers hardness and flexural strength at room temperature of the TaC ceramic with 2.50 mol% Si₃N₄ addition was 508 GPa, 15.5 GPa and 605 MPa, respectively. A slight decrease in bending strength was observed at 1200 °C due to oxidation of the samples.     

Effect of BN content on microstructures,mechanical and dielectric properties of porous BN/Si3N4 composite ceramics prepared by gel casting

Porous BN/Si₃N₄ composite ceramics with different BN contents have been fabricated by gel casting. The rheological behaviors of the suspensions, microstructure, mechanical properties, dielectric properties and critical temperature difference of thermal shock (ΔT_C) of porous BN/Si₃N₄ composite ceramics with different BN contents were investigated. With BN contents increasing, the mechanical properties of the porous BN/Si₃N₄ composite ceramics were partially declined, but the dielectric properties and thermal shock resistances were enhanced at the same time. For the porous Si₃N₄ ceramic without BN addition, the porosity, flexural strength, dielectric constant and critical temperature difference were 48.1%, 128 MPa, 4.1 and 395 °C, while for the 10 vol% BN/Si₃N₄ porous composite ceramics, they were 49.4%, 106.6 MPa, 3.8, and 445 °C, respectively. The overall performance of the obtained porous BN/Si₃N₄ composite ceramics indicated that it could be one of the ideal candidates for high-temperature wave-transparent applications.     

Preparation and characterization of Si3N4-based composite ceramic tool materials by microwave sintering

Si₃N₄-based composite ceramic tool materials with (W,Ti)C as particle reinforced phase were fabricated by microwave sintering. The effects of the fraction of (W,Ti)C and sintering temperature on the mechanical properties, phase transformation and microstructure of Si₃N₄-based ceramics were investigated. The frictional characteristics of the microwave sintered Si₃N₄-based ceramics were also studied. The results showed that the (W,Ti)C would hinder the densification and phase transformation of Si₃N₄ ceramics, while it enhanced the aspect-ratio of β-Si₃N₄ which promoted the mechanical properties. The Si₃N₄-based composite ceramics reinforced by 15 wt% (W,Ti)C sintered at 1600 °C for 10 min by microwave sintering exhibited the optimum mechanical properties. Its relative density, Vickers hardness and fracture toughness were 95.73 ± 0.21%, 15.92 ± 0.09 GPa and 7.01 ± 0.14 MPa m^1/2, respectively. Compared to the monolithic Si₃N₄ ceramics by microwave sintering, the sintering temperature decreased 100 °C,the Vickers hardness and fracture toughness were enhanced by 6.7% and 8.9%, respectively. The friction coefficient and wear rate of the Si₃N₄/(W,Ti)C sliding against the bearing steel increased initially and then decreased with the increase of the mass fraction of (W,Ti)C., and the friction coefficient and wear rate reached the minimum value while the fraction of (W,Ti)C was 15 wt%.     

Fabrication of continuously porous SiC–Si3N4 composite using SiC powder by extrusion process

Large amounts of waste SiC sludge containing small amounts of Si and organic lubricant were produced during the wire cutting process of single crystal silicon ingots. Waste SiC sludge was purified by washing it with organic solvent and purified SiC powder was used to fabricate the continuously porous SiC–Si₃N₄ composites, using an extrusion process, in which carbon, 6 wt% Y₂O₃ + 2 wt% Al₂O₃ and ethylene vinyl acetate were added as a pore-forming agent, sintering additives and binder, respectively. In the burning-out process, the binder and carbon were fully removed and continuously porous SiC–Si₃N₄ composites were successfully fabricated. The green bodies containing waste SiC, Si powder and sintering additives were nitrided at 1400 °C in a flowing N₂ + 10% H₂ gas mixture. The continuously porous composites contained SiC, α-Si₃N₄, β-Si₃N₄ and few Fe phases. The pore size of the second passed and third passed SiC–Si₃N₄ composites was 260 μm and 35 μm in diameter, respectively. The values of bending strength and hardness in the second passed and third passed samples were 62.97 MPa, 388 Hv and 77.82 MPa, 423 Hv, respectively.     

Synthesis,electromagnetic reflection loss and oxidation resistance of pyrolytic carbon-Si3N4 ceramics with dense Si3N4 coating

Si₃N₄-coated porous pyrolytic carbon-Si₃N₄ ceramics (PyC-Si₃N₄/Si₃N₄) were fabricated by chemical vapour infiltration of PyC into porous Si₃N₄ ceramic and then chemical vapour deposition of Si₃N₄ coating on the surface of the obtained PyC-Si₃N₄. The PyC-Si₃N₄/Si₃N₄ with 3.1 vol.% PyC content possesses electromagnetic reflection loss as low as ?11.5 dB. Due to the excellent sealing effect of dense Si₃N₄ coating, the PyC-Si₃N₄/Si₃N₄ possesses good oxidation resistance, which makes PyC-Si₃N₄/Si₃N₄ a good electromagnetic absorbing material that can be used at temperature as high as 1100 °C.     

In situ synthesis of Si2N2O/Si3N4 composite ceramics using polysilyloxycarbodiimide precursors

In situ synthesis of Si₂N₂O/Si₃N₄ composite ceramics was conducted via thermolysis of novel polysilyloxycarbodiimide ([SiOSi(NCN)₃]_n) precursors between 1000 and 1500 °C in nitrogen atmosphere. The relative structures of Si₂N₂O/Si₃N₄ composite ceramics were explained by the structural evolution observed by electron energy-loss spectroscopy but also by Fourier transform infrared and ²⁹Si-NMR spectrometry. An amorphous single-phase Si₂N₂O ceramic with porous structure with pore size of 10–20 μm in diameter was obtained via a pyrolyzed process at 1000 °C. After heat-treatment at 1400 °C, a composite ceramic was obtained composed of 53.2 wt.% Si₂N₂O and 46.8 wt.% Si₃N₄ phases. The amount of Si₂N₂O phase in the composite ceramic decreased further after heat-treatment at 1500 °C and a crystalline product containing 12.8 wt.% Si₂N₂O and 87.2 wt.% Si₃N₄ phases was obtained. In addition, it is interesting that residual carbon in the ceramic composite nearly disappeared and no SiC phase was observed in the final Si₂N₂O/Si₃N₄ composite.     

Characterization of porous silicon nitride ceramics by pressureless sintering using fly ash cenosphere as a pore-forming agent

A new method for fabricating porous silicon nitride ceramics has been developed by using fly ash cenosphere (FAC) with mean diameter of 87 μm as a pore-forming agent. Sintering was carried out at 1780 °C for 2 h under a nitrogen atmosphere. FAC can also act as a sintering aid besides a pore-forming agent. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies showed that YSiO₂N forms instead of Y₂Si₃O₃N₄ when FAC is incorporated. Microstructural analysis revealed that large spherical cavities are scattered in a relative dense matrix. Porous Si₃N₄ ceramics with density of 2.17–2.30 g/cm³, Young’s modulus of 141–150 GPa and strength of 180–320 MPa were obtained by changing the FAC content.     

Thermal conductivity of porous SiC composite ceramics derived from paper precursor

Biomorphic porous SiC composite ceramics were produced by chemical vapor infiltration and reaction (CVI-R) technique using paper precursor as template. The thermal conductivity of four samples with different composition and microstructure was investigated: (a) C-template, (b) C-SiC, (c) C-SiC–Si₃N₄ and (d) SiC coated with a thin layer of TiO₂. The SiC–Si₃N₄ composite ceramic showed enhanced oxidation resistance compared to single phase SiC. However, a key property for the application of these materials at high temperatures is their thermal conductivity. The later was determined experimentally at defined temperatures in the range 293–373 K with a laser flash apparatus. It was found that the thermal conductivity of the porous ceramic composites increases in the following order: C-template < C-SiC < C-SiC–Si₃N₄ < SiC–TiO₂. The results were interpreted in regard to the porosity and the microstructure of the ceramics.     

Effect of pre-oxidation on the microstructure,mechanical and dielectric properties of highly porous silicon nitride ceramics

Highly porous Si₃N₄ ceramics have been fabricated via freeze casting and sintering. The as-sintered samples were pre-oxidized at 1200–1400 °C for 15 min. The effect of pre-oxidation temperature on the microstructure, flexural strength, and dielectric properties of porous Si₃N₄ ceramics were investigated. As the pre-oxidation temperature increased from 1200 °C to 1400 °C, firstly, the flexural strength of the pre-oxidized specimens remained almost constant at 1200 °C, and then decreased to 14.2 MPa at 1300 °C, but finally increased to 25.6 MPa at 1400 °C, while the dielectric constant decreased gradually over the frequencies ranging from 8.2 GHz to 12.4 GHz. This simple process allows porous Si₃N₄ ceramics to have ultra-low dielectric constant and moderate strength, which will be feasible in broadband radome applications at high temperatures.     

Structure–property relations of ferroelectric BaTiO3 ceramics containing nano-sized Si3N4 particulates

Barium titanate/silicon nitride (BaTiO₃/xSi₃N₄) powder (when x = 0, 0.1, 0.5, 1 and 3 wt%) were prepared by solid-state mixed-oxide method and sintered at 1400 °C for 2 h. X-ray diffraction result suggested that tetragonality (c/a) of the BaTiO₃/xSi₃N₄ ceramics increased with increasing content of Si₃N₄. Density and grain size of BaTiO₃/xSi₃N₄ ceramic were found to increase for small addition (i.e. 0.1 and 0.5 wt%) of Si₃N₄ mainly due to the presence of liquid phase during sintering. BaTiO₃ ceramics containing such amount of Si₃N₄ also showed improved dielectric and ferroelectric properties.     

Dielectric properties of Si3N4–SiCN composite ceramics in X-band

Si₃N₄–SiCN composite ceramics were successfully fabricated through precursor infiltration pyrolysis (PIP) method using polysilazane as precursor and porous Si₃N₄ as preform. After annealed at temperatures varying from 900 °C to 1400 °C, the phase composition of SiCN ceramics, electrical conductivity and dielectric properties of Si₃N₄–SiCN composite ceramics over the frequency range of 8.2–12.4 GHz (X-band) were investigated. With the increase of annealing temperature, the content of amorphous SiCN decreases and that of N-doped SiC nano-crystals increases, which leads to the increase of electrical conductivity. After annealed at 1400 °C, the average real and imaginary permittivities of Si₃N₄–SiCN composite ceramics are increased from 3.7 and 4.68 × 10^?3 to 8.9 and 1.8, respectively. The permittivities of Si₃N₄–SiCN composite ceramics show a typical ternary polarization relaxation, which are ascribed to the electric dipole and grain boundary relaxation of N-doped SiC nano-crystals, and dielectric polarization relaxation of the in situ formed graphite. The Si₃N₄–SiCN composite ceramics exhibit a promising prospect as microwave absorbing materials.     

Effect of Si addition on the mechanical and thermal properties of sintered reaction bonded silicon nitride

Advanced silicon nitride (Si₃N₄) ceramics were fabricated using a mixture of Si₃N₄ and silicon (Si) powders via conventional processing and sintering method. These Si₃N₄ ceramics with sintering additives of ZrO₂ + Gd₂O₃ + MgO were sintered at 1800 °C and 0.1 MPa in N₂ atmosphere for 2 h. The effects of added Si content on density, phases, microstructure, flexural strength, and thermal conductivity of the sintered Si₃N₄ samples were investigated in this study. The results showed that with the increase of Si content added, the density of the samples decreased from 3.39 g/cm³ to 2.92 g/cm³ except for the sample without initial Si₃N₄ powder addition, while the thermal diffusivity of the samples decreased slightly. This study suggested that addition of Si powder, which varied from 0 to 100%, in the starting materials might provide a promising route to fabricate cost-effective Si₃N₄ ceramics with a good combination of mechanical and thermal properties.     

Effects of AlN inorganic binder on the properties of porous Si3N4 ceramics prepared by selective laser sintering

Porous Si₃N₄ ceramics are widely used in the aerospace field due to its lightweight, high-strength, and high wave transmission. Traditional manufacturing methods are difficult to fabricate complex structural and functional ceramic parts. In this paper, selective laser sintering (SLS) technology was applied to prepare porous Si₃N₄ ceramics using AlN as an inorganic binder. And the effects of AlN content on the properties of the obtained ceramic samples were explored. As the AlN content increased, nano-Al₂O₃ and nano-SiO₂ formed the eutectic liquid phase, enhancing the sintering densification and phase transformation of Si₃N₄ poly-hollow microspheres (PHMs). The island-like partial densification structures in Si₃N₄ green bodies increased. During the high-temperature sintering, the eutectic liquid phase partially transformed into the mullite phase or reacted with AlN and Si₃N₄ to form the Sialon phase. With the increase of AlN content, the fracture mode of Si₃N₄ ceramics changed from fracturing along PHMs to fracturing across PHMs. The bonding depth between PHMs increased and the connection between the grains was tighter, so the Si₃N₄ ceramics became denser. With the increase of AlN addition, the total porosity of the porous Si₃N₄ ceramics tended to decrease and the flexural strength gradually increased. When AlN content was 20 wt%, the total porosity and the flexural strength were 33.6% and 23.9 MPa, respectively. The addition of AlN inorganic binder was carried out to develop a novel way to prepare high-performance porous Si₃N₄ ceramics by SLS.     

Fabrication of Si3N4–SiBC composite ceramic and its excellent electromagnetic properties

To obtain better electromagnetic wave absorbing property, it is vitally necessary to develop novel ceramics with not only high dielectric loss but also low dielectric constant. Si₃N₄–SiBC, a composite ceramic with such dielectric properties, was fabricated by infiltrating SiBC into porous Si₃N₄ ceramic via low pressure chemical vapor infiltration. The high dielectric loss and the low dielectric constant are attributed to the unique microstructure of SiBC, which also leads to a very excellent wave-absorbing property of Si₃N₄–SiBC ceramic, attaining a minimal reflection coefficient of ?28 dB. Besides, the Si₃N₄–SiBC ceramic also shows a high mechanical property. Therefore, the Si₃N₄–SiBC ceramic exhibits great potential as an excellent functional and structural ceramic.     

Variation of sintering parameters at an early stage of densification affecting β-Si3N4-microstructure

The influence of sintering parameters at an early stage of densification on the evolution of a bimodal microstructure in Si₃N₄ ceramics was investigated. Commonly two different methods are pursued to design a bimodal Si₃N₄ microstructure: (i) annealing at a later sintering stage (T > 1850 °C) initiating β-Si₃N₄ grain growth via Ostwald ripening and (ii) seeding with β-Si₃N₄ nuclei, which abnormally grow during the liquid-phase sintering process. In this study, a third and novel method to design Si₃N₄ microstructures by affecting intrinsic nucleation phenomena at an early sintering stage is presented. In order to study the influence of sintering parameters on β-Si₃N₄ nuclei formation during the early stage of densification, temperature and pressure were systematically changed. Starting from identical green bodies (identical processing and doping), the variation of the sintering parameters affected intrinsic β-Si₃N₄ nucleation. This procedure allows variation in the fineness of the matrix as well as in the number and dimension of the large elongated β-Si₃N₄ grains embedded in the matrix. Since identical green bodies are used as starting material, the resulting microstructure can easily be tailored toward corresponding application needs.     

Effect of the Y2O3 additive concentration on the properties of a silicon nitride ceramic substrate

Silicon nitride (Si₃N₄) ceramics offer excellent thermal, mechanical and dielectric properties, which make Si₃N₄ a good candidate material for an application as electronic packaging material. For an application as a heat dissipation substrate, most studies focused on achieving a high thermal conductivity through long-time heat preservation and different kinds of heat treatments. Very few studies also considered the mechanical and dielectric properties. In addition, there have not been systematic researches about influence of additives concentration and type on the combination properties of Si₃N₄. Therefore, in this study, Si₃N₄ ceramic samples were prepared via hot pressing at 1800 °C with a relatively short heat preservation step (2 h), with different amounts of Y₂O₃ added as sintering additive. The effect of the initial concentration of the rare earth oxide on the chemical composition, microstructure, thermal conductivity, as well as the mechanical and dielectric properties of the Si₃N₄ ceramic samples was systematically studied.     

The preparation of silicon nitride ceramics by gelcasting and pressureless sintering

A new gelling system based on the polymerization of hydantion epoxy resin and 3,3′-Diaminodipropylamine (DPTA) was successfully developed for fabricating silicon nitride (Si₃N₄) ceramics. The effects of pH value, the dispersant content, solid volume fraction and hydantion epoxy resin amount on the rheological properties of the Si₃N₄ slurries were investigated. The relative density of green body obtained from the solid loading of 52 vol% Si₃N₄ slurry reached up to 62.7%. As the concentration of hydantion epoxy resin increased from 5 wt% to 20 wt%, the flexural strength of Si₃N₄ green body enhanced from 5.3 MPa to 31.6 MPa. After pressureless sintering at 1780 °C for 80 min, the sintered samples exhibited the unique interlocking microstructure of elongated β-Si₃N₄ grains, which was beneficial to improve the mechanical properties of Si₃N₄ ceramics. The relative density, flexural strength and fracture toughness of Si₃N₄ ceramics reached 97.8%, 687 MPa and 6.5 MPa m^1/2, respectively.     

Diamond dispersed Si3N4 composites obtained by pulsed electric current sintering

30 vol.% 2 and 30 μm diamond dispersed Si₃N₄ matrix composites were prepared by pulsed electric current sintering (PECS) for 4 min at 100 MPa in the 1550–1750 °C range. The densification behaviour, microstructure, Si₃N₄ phase transformation and stiffness of the composites were assessed, as well as the thermal stability of the dispersed diamond phase. Monolithic Si₃N₄ with 4 wt% Al₂O₃ and 5 wt% Y₂O₃ sintering additives was fully densified at 1550 °C for 4 min and 60 MPa. The densification and α to β-Si₃N₄ transformation were substantially suppressed upon adding 30 vol.% diamond particles. Diamond graphitisation in the Si₃N₄ matrix was closely correlated to the sintering temperature and grit size. The dispersed coarse grained diamonds significantly improved the fracture toughness of the diamond composite, whereas the Vickers hardness was comparable to that of the Si₃N₄ matrix ceramic. The Elastic modulus measurements were found to be an excellent tool to assess diamond graphitisation in a Si₃N₄ matrix.     

Mechanical and dielectric properties of porous Si2N2O–Si3N4 in situ composites

Mechanical and dielectric properties of porous Si₂N₂O–Si₃N₄ in situ composites fabricated for use as radome by gel-casting process were investigated. The flexural strength of the Si₂N₂O–Si₃N₄ ceramics is 230.46 ± 13.24 MPa, the complex permittivity of the composites varies from 4.34 to 4.59 and the dissipation factor varies from 0.00053 to 0.00092 from room temperature to elevated temperature (1150 °C) at the X-band. In the porous regions, some Si₂N₂O fibers (50–100 nm in diameter) are observed which may improve the materials properties.