Ti3Si(Al)C2-based ceramics fabricated by reactive melt infiltration with Al70Si30 alloy

Dense Ti₃Si(Al)C₂-based ceramics were synthesized using reactive melt infiltration (RMI) of Al₇₀Si₃₀ alloy into the porous TiC preforms. The effects of the infiltration temperature on the microstructure and mechanical properties of the synthesized composites were investigated. All the composites infiltrated at different temperatures were composed of Ti₃Si(Al)C₂, TiC, SiC, Ti(Al, Si)₃ and Al. With the increase of infiltration temperature from 1050 °C to 1500 °C, the Ti₃Si(Al)C₂ content increased to 52 vol.% and the TiC content decreased to 15 vol.%, and the Vickers hardness, flexural strength and fracture toughness of Ti₃Si(Al)C₂-based composite reached to 9.95 GPa, 328 MPa and 4.8 MPa m^1/2, respectively.     

Microstructure and properties of dense Tyranno-ZMI SiC/SiC containing Ti3Si(Al)C2 with plastic deformation toughening mechanism

In this paper, Ti₃Si(Al)C₂ was introduced into dense SiC/SiC to improve the mechanical and electromagnetic interference (EMI) shielding properties. In order to reveal the effect of Ti₃Si(Al)C₂, dense SiC/SiC-Ti₃Si(Al)C₂ and dense SiC/SiC without Ti₃Si(Al)C₂ were fabricated. Owing to the plastic deformation toughening mechanism of Ti₃Si(Al)C₂, SiC/SiC-Ti₃Si(Al)C₂ performs a new damage mode characterized by matrix/matrix (m/m) debonding. High interfacial shear strength (IFSS) due to large thermal residual stress (TRS) is weakened by m/m debonding. This new mode also brings high effective volume fraction of loading fibers and long path of crack propagation. Hence SiC/SiC-Ti₃Si(Al)C₂ exhibits higher flexural strength (503 MPa) and fracture toughness (23.7 MPa · m^1/2) than the dense SiC/SiC without Ti₃Si(Al)C₂. In addition, dense SiC/SiC-Ti₃Si(Al)C₂ shows excellent electromagnetic interference shielding effectiveness (EMI SE, 43.0 dB) in X-band, revealing great potential as thermo-structural and functional material.     

Microstructure,mechanical, thermal,and oxidation properties of a Zr2[Al(Si)]4C5–SiC composite prepared by in situ reaction/hot-pressing

The microstructure, mechanical and thermal properties, as well as oxidation behavior, of in situ hot-pressed Zr₂[Al(Si)]₄C₅–30 vol.% SiC composite have been characterized. The microstructure is composed of elongated Zr₂[Al(Si)]₄C₅ grains and embedded SiC particles. The composite shows superior hardness (Vickers hardness of 16.4 GPa), stiffness (Young's modulus of 386 GPa), strength (bending strength of 353 MPa), and toughness (fracture toughness of 6.62 MPa m^1/2) compared to a monolithic Zr₂[Al(Si)]₄C₅ ceramic. Stiffness is maintained up to 1600 °C (323 GPa) due to clean grain boundaries with no glassy phase. The composite also exhibits higher specific heat capacity and thermal conductivity as well as better oxidation resistance compared to Zr₂[Al(Si)]₄C₅.     

Microstructure and mechanical properties of SiC-SiC joints joined by spark plasma sintering

The development of reliable joining technology is of great importance for the full use of SiC. Ti₃SiC₂, which is used as a filler material for SiC joining, can meet the demands of neutron environment applications and can alleviate residual stress during the joining process. In this work, SiC was joined using different powders (Ti₃SiC₂ and 3Ti/1.2Si/2C/0.2Al) as filler materials and spark plasma sintering (SPS). The influence of the joining temperature on the flexural strength of the SiC joints at room temperature and at high temperatures was investigated. Based on X-ray diffraction and scanning electron microscopy analyses, SiC joints with 3Ti/1.2Si/2C/0.2Al powder as the filler material possess high flexural strengths of 133 MPa and 119 MPa at room temperature and at 1200 °C, respectively. The superior flexural strength of the SiC joint at 1200 °C is attributed to the phase transformation of TiO₂ from anatase to rutile.     

Effect of TiO2 addition on the properties of Ti3Si(Al)C2 based ceramics fabricated by reactive melt infiltration

In this paper, Ti₃Si(Al)C₂ based ceramics were fabricated by reactive melt infiltration (RMI) of TiC/TiO₂ preforms with liquid silicon. The microstructure, phase composition, and mechanical properties of the Ti₃Si(Al)C₂ based ceramics have been investigated to understand the effect of phase composition of the preforms on the formation mechanisms of Ti₃Si(Al)C₂. The preforms with different content of TiO₂ infiltrated at 1500 °C with liquid silicon for 1 h were composed of Ti₃Si(Al)C₂, Al₂O₃, TiC, TiSi_xAl_y and residual Al. The prior generated Al₂O₃ phases inhibited the dispersion of Ti₃Si(Al)C₂ phases, resulting in the drastically grain growth of Ti₃Si(Al)C₂. Subsequently, the microstructure with gradually increasing Ti₃Si(Al)C₂ grain size resulted in the decrease of the bending strength and fracture toughness of samples. When the content of TiO₂ reached 20 wt%, the bending strength reached the maximum, 326.6 MPa. The fracture toughness attained the maximum, 4.3 MPa m^1/2, when the content of TiO₂ was 10 wt%.     

Reaction joining of SiC ceramics using TiB2-based composites

SiC ceramics were reaction joined in the temperature range of 1450–1800 °C using TiB₂-based composites starting from four types of joining materials, namely Ti–BN, Ti–B₄C, Ti–BN–Al and Ti–B₄C–Si. XRD analysis and microstructure examination were carried out on SiC joints. It is found that the former two joining materials do not yield good bond for SiC ceramics at temperatures up to 1600 °C. However, Ti–BN–Al system results in the connection of SiC substrates at 1450 °C by the formation of TiB₂–AlN composite. Furthermore, nearly dense SiC joints with crack-free interface have been produced from Ti–BN–Al and Ti–B₄C–Si systems at 1800 °C, i.e. joints TBNA80 and TBCS80, whose average bending strengths are measured to be 65 MPa and 142 MPa, respectively. The joining mechanisms involved are also discussed.     

Microstructure and mechanical strength of transient liquid phase bonded Ti3SiC2 joints using Al interlayer

Based on the structure characteristic of Ti₃SiC₂ and the easy formation of Ti₃Si_1−xAl_xC₂ solid solution, a transient liquid phase (TLP) bonding method was used for bonding layered ternary Ti₃SiC₂ ceramic via Al interlayer. Joining was performed at 1100–1500 °C for 120 min under a 5 MPa load in Ar atmosphere. SEM and XRD analyses revealed that Ti₃Si(Al)C₂ solid solution rather than intermetallic compounds formed at the interface. The mechanism of bonding is attributed to aluminum diffusing into the Ti₃SiC₂. The strength of joints was evaluated by three point bending test. The maximum flexural strength reaches a value of 263 ± 16 MPa, which is about 65% of that of Ti₃SiC₂; for the sample prepared under the joining condition of 1500 °C for 120 min under 5 MPa. This flexural strength of the joint is sustained up to 1000 °C.     

Fabrication of carbon fiber reinforced ceramic matrix composites with improved oxidation resistance using boron as active filler

Boron was introduced into C_f/SiC composites as active filler to shorten the processing time of PIP process and improve the oxidation resistance of composites. When heat-treated at 1800 °C in N₂ for 1 h, the density of composites with boron (C_f/SiC-BN) increased from 1.71 to 1.78 g/cm³, while that of composites without boron (C_f/SiC) decreased from 1.92 to 1.77 g/cm³. So when boron was used, two cycles of polymer impregnation and pyrolysis (PIP) could be reduced. Meanwhile, the oxidation resistance of composites was greatly improved with the incorporation of boron-bearing species. Most carbon fiber reinforcements in C_f/SiC composite were burnt off when they were oxidized at 800 °C for 10 h. By contrast, only a small amount of carbon fibers in C_f/SiC-BN composite were burnt off. Weight losses for C_f/SiC composite and C_f/SiC-BN composite were about 36 and 16 wt%, respectively.     

Superior bending and impact properties of SiC matrix composites infiltrated with an aluminium alloy

A simple process based on melt infiltration was used to modify a silicon carbide (SiC) ceramic and thus improve its mechanical properties. SiC ceramics infiltrated with an Al alloy for 2 h, 4 h, 6 h, and 8 h exhibited outstanding mechanical performance. The three-point bending strength, four-point bending strength, and impact toughness of the SiC ceramics increased by 125–135%, 170–180%, and 140%, respectively, after infiltration with the Al alloy at 900 °C for 4–6 h. The maximum three-point bending strength, four-point bending strength, and impact toughness achieved were 430 MPa, 360 MPa, and 3.5 kJ/m², respectively. Analysis of the processing conditions and microstructure demonstrated that the molten Al alloy effectively infiltrated the gaps between the SiC particles, forming a compact structure with the particles, and some of the Al phases reacted with Si to form Al-Si eutectic phases. Moreover, the results showed that a reaction layer is present on the surface of the SiC sample, which mainly contains the Ti₃SiC₂ phase. Both complete infiltration with the Al alloy and the formation of the Ti₃SiC₂ phase contributed to the improvement of the mechanical properties.     

Reactive brazing Cf/SiC to itself and to Mo using the NiPdPtAu-Cr filler alloy

The NiPdPtAu-Cr filler alloy was proposed for joining C_f/SiC composites. The wettability on C_f/SiC composite was studied by the sessile drop method at 1200 °C for 30 min. Under the brazing condition of 1200 °C for 10 min, the C_f/SiC-C_f/SiC joint strength was only 51.7 MPa at room temperature. However, when used a Mo layer, the C_f/SiC-Mo-C_f/SiC joint strength was remarkably increased to 133.2 MPa at room temperature and 149.5 MPa at 900 °C, respectively. At the interface between C_f/SiC and Mo, Mo participated in interfacial reactions, with the formation of Cr₃C₂/Mo₂C reaction layers at the C_f/SiC surface. The improvement in the joint strength should be mainly attributed to the formation of MoNiSi. The C_f/SiC-Mo joint strength was 86.9 MPa at room temperature and 73.7 MPa at 900 °C, respectively. After 10 cycles of thermal shock test at 900 °C the C_f/SiC-Mo joint strength of 71.6 MPa was still maintained.     

Fabrication and electromagnetic interference shielding effectiveness of Ti3Si(Al)C2 modified Al2O3/SiC composites

A dense alumina fiber reinforced silicon carbide matrix composites (Al₂O₃/SiC) modified with Ti₃Si(Al)C₂ were prepared by a joint process of chemical vapor infiltration, slurry infiltration and reactive melt infiltration. The conductive Ti₃Si(Al)C₂ phase introduced into the matrix modified the microstructure of Al₂O₃/SiC. The refined microstructure was composed of conductive phase, semiconductive phase and insulating phase, which led to admirable electromagnetic shielding properties. Electromagnetic interference shielding effectiveness (EMI SE) of Al₂O₃/SiC and Ti₃Si(Al)C₂ modified Al₂O₃/SiC were investigated over the frequency range of 8.2–12.4 GHz. The EMI SE of Al₂O₃/SiC-Ti₃Si(Al)C₂ exhibited a significant increase from 27.6 to 42.1 dB compared with that of Al₂O₃/SiC. The reflection and absorption shielding effectiveness increased simultaneously with the increase of the electrical conductivity.     

Reaction Synthesis and Mechanical Properties of TiB2–AlN–SiC Composites

TiB₂–AlN–SiC (TAS) ternary composites were prepared by reactive hot pressing at 2000°C for 60 min in an Ar atmosphere using TiH₂, Si, Al, B₄C, BN and C as raw powders. The phase composition was determined to be TiB₂, AlN and β-SiC by XRD. The distribution of elements Al and Si were not homogeneous, which shows that to obtain a homogeneous solid solution of AlN and SiC in the composites by the proposed reaction temperatures higher than 2000°C or time duration longer than 60 min are needed. The higher fracture toughness (6·35±0·74 MPa·m^1/2 and 6·49±0·73 MPa·m^1/2) was obtained in samples with equal molar contents of AlN and SiC (TAS-2 and TAS-5) in the TAS composites. The highest fracture strength (470±16 MPa) was obtained in TAS-3 sample, in which the volume ratio of TiB₂/(AlN+SiC) was the nearest to 1 and there was finer co-continuous microstructure. ©     

Facile synthesis of Ti3SiC2 powder by high energy ball-milling and vacuum pressureless heat-treating process from Ti–TiC–SiC–Al powder mixtures

In this article, Ti/TiC/SiC/Al powder mixtures with molar ratios of 4:1:2:0.2 were high energy ball-milled, compacted, and heated in vacuum with various schedules, in order to reveal the effects of temperature, soaking time, thickness of the compacts, and carbon content on the purity of the sintered compacts. X-ray diffraction and scanning electron microscopy were employed to investigate the phase purity, particle size and morphology of the synthesized samples. It was found that the Ti₃SiC₂ content nearly reached 100 wt.% on the surface layer of the sintered compacts prepared in the temperature range from 1350 °C to 1400 °C for 1 h. Powder containing 91 wt.% Ti₃SiC₂ was successfully synthesized by heating 6 mm green compacts of 4Ti/1TiC/2SiC/0.2Al at 1380 °C for 1 h in vacuum. The excessive carbon content failed to improve the purity of Ti₃SiC₂ powder. TiC phase was the main impurity in the formation process of Ti₃SiC₂.     

Spark plasma sintering and pressureless sintering of SiC using aluminum borocarbide additives

Aluminum borocarbide powders (Al₃BC₃ and Al₈B₄C₇) were synthesized, and the ternary powders were used as a sintering additive of SiC. The densification of SiC was nearly completed at 1670 °C using spark plasma sintering (SPS) and pressureless sintering was possible at 1950 °C. The sintering behavior of SiC using the new additive systems was nearly identical with that using the conventional Al–B–C system, but grain growth was suppressed when adding the borocarbides. In addition, oxidation of the fine additive powders did not intensively occur in air, which has been a problem in the case of the Al–B–C system for industrial application. The hardness, Young's modulus and fracture toughness of a sintered SiC specimen were 21.6 GPa, 439 GPa and 4.6 MPa m^1/2, respectively. The ternary borocarbide powders are efficient sintering additives of SiC.     

C/C–SiC composite prepared by Si–10Zr alloyed melt infiltration

A high performance and low cost C/C–SiC composite was prepared by Si–10Zr alloyed melt infiltration. Carbon fiber felt was firstly densified by pyrolytic carbon using chemical vapor infiltration to obtain a porous C/C preform. The eutectic Si–Zr alloyed melt (Zr: 10 at.%, Si: 90 at.%) was then infiltrated into the porous preform at 1450 °C to prepare the C/C–SiC composite. Due to the in situ reaction between the pyrolytic carbon and the Si–Zr alloy, SiC, ZrSi₂ and ZrC phases were formed, the formation and distribution of which were investigated by thermodynamics. The as-received C/C–SiC composite, with the flexural strength of 353.6 MPa, displayed a pseudo-ductile fracture behavior. Compared with the C/C preform and C/C composite of high density, the C/C–SiC composite presented improved oxidation resistance, which lost 36.5% of its weight whereas the C/C preform lost all its weight and the high density C/C composite lost 84% of its weight after 20 min oxidation in air at 1400 °C. ZrO₂, ZrSiO₄ and SiO₂ were formed on the surface of the C/C–SiC composite, which effectively protected the composite from oxidation.     

Effect of excess silicon content on the formation of nano-layered Ti3SiC2 ceramic via infiltration of TiC preforms

The aim of this work was to investigate the effect of silicon content on the formation and morphology of Ti₃SiC₂ based composite via infiltration of porous TiC preforms. The gelcasting process was used for fabrication of preforms. It was found that the infiltrated sample at 1500 °C for 90 min from a mixture of 3TiC/1.5Si containing 92 wt.% Ti₃SiC₂. With the increasing of TiC and SiC impurity phases, Vickers hardness was increased to the maximum value of 12.9 GPa in Ti₃SiC₂–39 wt.%TiC composite. Microscopic observations showed that the Ti₃SiC₂ matrix was composed of columnar, platelike and equiaxial grains with respect to silicon content.     

High temperature interfacial phase stability of a Mo/Ti3SiC2 laminated composite

A Mo/Ti₃SiC₂ laminated composite is prepared by spark plasma sintering at 1300 °C under a pressure of 50 MPa. Al powder is used as sintering aid to assist the formation of Ti₃SiC₂. The fabricated composites were annealed at 800, 1000 and 1150 °C under vacuum for 5, 10, 20 and 40 h to study the composite's interfacial phase stability at high temperature. Three interfacial layers, namely Mo₂C layer, AlMoSi layer and Ti₅Si₃ solid solution layer are formed during sintering. Experimental results show that the Mo/Ti₃SiC₂ layered composite prepared in this study has good interfacial phase stability up to at least 1000 °C and the growth of the interfacial layer does not show strong dependence on annealing time. However, after being exposed to 1150 °C for 10 h, cracks formed at the interface.     

Effect of brazing parameters on microstructure and mechanical properties of Cf/SiC and Nb-1Zr joints brazed with Ti-Co-Nb filler alloy

Reliable brazing of carbon fiber reinforced SiC (C_f/SiC) composite to Nb-1Zr alloy was achieved by adopting a novel Ti45Co45Nb10 (at.%) filler alloy. The effects of brazing temperature (1270–1320 °C) and holding time (5–30 min) on the microstructure and mechanical properties of the joints were investigated. The results show that a continuous reaction layer (Ti,Nb)C was formed at the C_f/SiC/braze interface. A TiCo and Nb(s,s) eutectic structure was observed in the brazing seam, in which some CoNb₄Si phases were distributed. By increasing the brazing temperature or extending the holding time, the reaction layer became thicker and the amount of the CoNb₄Si increased. The optimized average shear strength of 242 MPa was obtained when the joints were brazed at 1280 °C for 10 min. The high temperature shear strength of the joints reached 202 MPa and 135 MPa at 800 °C and 1000 °C, respectively.     

Fabrication of cylindrical SiCf/Si/SiC-based composite by electrophoretic deposition and liquid silicon infiltration

Cylindrical SiC-based composites composed of inner Si/SiC reticulated foam and outer Si-infiltrated SiC fiber-reinforced SiC (SiC_f/Si/SiC) skin were fabricated by the electrophoretic deposition of matrix particles into SiC fabrics followed by Si-infiltration for high temperature heat exchanger applications. An electrophoretic deposition combined with ultrasonication was used to fabricate a tubular SiC_f/SiC skin layer, which infiltrated SiC and carbon particles effectively into the voids of SiC fabrics by minimizing the surface sealing effect. After liquid silicon infiltration at 1550 °C, the composite revealed a density of 2.75 g/cm³ along with a well-joined interface between the inside Si/SiC foam and outer SiC_f/Si/SiC skin layer. The results also showed that the skin layer, which was composed of 81.4 wt% β-SiC, 17.2 wt% Si and 1.4 wt% SiO₂, exhibited a gastight dense microstructure and the flexural strength of 192.3 MPa.     

Silicon carbide films from polycarbosilane and their usage as buffer layers for diamond deposition

Thin films of polycarbosilane (PCS) were coated on a Si (100) wafer and converted to silicon carbide (SiC) by pyrolyzing them between 800 and 1150 °C. Granular SiC films were derived between 900 and 1100 °C whereas smooth SiC films were developed at 800 and 1150 °C. Enhancement of diamond nucleation was exhibited on the Si (100) wafer with the smooth SiC layer generated at 1150 °C, and a nucleation density of 2 × 10¹¹ cm^− 2 was obtained. Nucleation density reduced to 3 × 10¹⁰ cm^− 2 when a bias voltage of − 100 V was applied on the SiC-coated Si substrate. A uniform diamond film with random orientations was deposited to the PCS-derived SiC layer. Selective growth of diamond film on top of the SiC buffer layer was demonstrated.