Extraordinary toughening enhancement and flexural strength in Si3N4 composites using graphene sheets

Two types of Si₃N₄ composites containing graphene nanostructures using two different graphene sources, pristine graphene nanoplatelets and graphene oxide layers were produced by Spark Plasma Sintering. The maximum toughness of 10.4 MPa m^1/2, measured by flexure testing of pre-cracked bars, was achieved for a composite (∼60β/40α-Si₃N₄, ∼300 nm grain size) with 4 vol.% of reduced graphene oxide, indicating a toughening enhancement of 135% when compared to a similar Si₃N₄. This was also accompanied by a 10% increase in flexure strength (1040 MPa). For the composites with thicker graphene nanoplateletes only a 40% of toughness increase (6.6 MPa m^1/2) without strength improvement was observed for the same filler content. The large difference in the maximum toughness values accomplished for both types of composites was attributed to variations in the graphene/Si₃N₄ interface characteristics and the extent of monolayer graphene exfoliation.     

Mechanical properties of Si3N4 ceramics from an in-situ synthesized a-Si3N4/β-Si3N4 composite powder

Sintered Si₃N₄ ceramics were prepared from an ɑ-Si₃N₄/β-Si₃N₄ whiskers composite powder in-situ synthesized via carbothermal reduction at 1400–1550 °C in a nitrogen atmosphere from SiO₂, C, Ni, and NaCl mixture. Reaction temperatures and holding time for the composite powder, and mechanical properties of sintered Si₃N₄ were investigated. In the synthesized composite powder, the in-situ β-Si₃N₄ whiskers displayed an aspect ratio of 20–40 and a diameter of 60–150 nm, which was mainly dependent on the synthesis temperature and holding time. The flexural strength, fracture toughness and hardness of the sintered Si₃N₄ material reached 794±136 MPa, 8.60±1.33 MPa m^1/2 and 19.00±0.87 GPa, respectively. The in-situ synthesized β-Si₃N₄ whiskers played a role in toughening and strengthening by whiskers pulling out and crack deflection.     

MPCVD diamond coating of Si3N4–TiN electroconductive composite substrates

A study of microwave plasma (MPCVD) diamond deposition on Si₃N₄–TiN composites with different TiN amounts (0–30 vol.% TiN) is performed. These ceramic composites are requested in order to obtain a suitable material to be cut by electrodischarge machining (EDM), aiming their use as substrates for cutting tools and tribological components. TiN is an electrical conductor, contrarily to Si₃N₄, but it is characterized by a higher thermal expansion coefficient value than Si₃N₄ and diamond. The estimated thermal stresses are found to be low and tensile (0.90 GPa) when using the monolithic Si₃N₄ substrate, but compressive for the Si₃N₄–TiN composites, and even relatively high in magnitude (− 1.9 GPa) for the Si₃N₄–30 vol.% TiN composite. Brale indentation assessed the adhesion strength of diamond on the different substrate grades. Optimal behaviour (very low residual stress; no film delamination under 1000 N) is observed for the Si₃N₄–9 vol.% TiN substrate, corresponding to the lowest thermal mismatch and minimal residual stress magnitude.     

Microstructure and fracture toughness of Si3N4 + graphene platelet composites

Silicon nitride + 1 wt% graphene platelet composites were prepared using various graphene platelets (GPLs) as filler. The influence of the addition of GPLs on the microstructure development and on the fracture toughness of Si₃N₄ + GPLs composites was investigated. The GPLs with thickness from 5 nm to 50 nm are relatively homogeneously distributed in the matrix of all composites, however overlapping/bundle formation of GPLs was found, containing 2–4 platelets as well. The single GPLs and overlapped GPLs are located at the boundaries of Si₃N₄, and hinder the grain growth and change the shape of the grains. The fracture toughness was significantly higher for all composites in comparison to the monolithic Si₃N₄ with the highest value of 9.9 MPa m^0.5 for the composite containing the GPLs with smallest dimension. The main toughening mechanisms originated from the presence of graphene platelets, and responsible for the increase in the fracture toughness values are crack deflection, crack branching and crack bridging.     

Diamond dispersed Si3N4 composites obtained by pulsed electric current sintering

30 vol.% 2 and 30 μm diamond dispersed Si₃N₄ matrix composites were prepared by pulsed electric current sintering (PECS) for 4 min at 100 MPa in the 1550–1750 °C range. The densification behaviour, microstructure, Si₃N₄ phase transformation and stiffness of the composites were assessed, as well as the thermal stability of the dispersed diamond phase. Monolithic Si₃N₄ with 4 wt% Al₂O₃ and 5 wt% Y₂O₃ sintering additives was fully densified at 1550 °C for 4 min and 60 MPa. The densification and α to β-Si₃N₄ transformation were substantially suppressed upon adding 30 vol.% diamond particles. Diamond graphitisation in the Si₃N₄ matrix was closely correlated to the sintering temperature and grit size. The dispersed coarse grained diamonds significantly improved the fracture toughness of the diamond composite, whereas the Vickers hardness was comparable to that of the Si₃N₄ matrix ceramic. The Elastic modulus measurements were found to be an excellent tool to assess diamond graphitisation in a Si₃N₄ matrix.     

Fabrication of continuously porous SiC–Si3N4 composite using SiC powder by extrusion process

Large amounts of waste SiC sludge containing small amounts of Si and organic lubricant were produced during the wire cutting process of single crystal silicon ingots. Waste SiC sludge was purified by washing it with organic solvent and purified SiC powder was used to fabricate the continuously porous SiC–Si₃N₄ composites, using an extrusion process, in which carbon, 6 wt% Y₂O₃ + 2 wt% Al₂O₃ and ethylene vinyl acetate were added as a pore-forming agent, sintering additives and binder, respectively. In the burning-out process, the binder and carbon were fully removed and continuously porous SiC–Si₃N₄ composites were successfully fabricated. The green bodies containing waste SiC, Si powder and sintering additives were nitrided at 1400 °C in a flowing N₂ + 10% H₂ gas mixture. The continuously porous composites contained SiC, α-Si₃N₄, β-Si₃N₄ and few Fe phases. The pore size of the second passed and third passed SiC–Si₃N₄ composites was 260 μm and 35 μm in diameter, respectively. The values of bending strength and hardness in the second passed and third passed samples were 62.97 MPa, 388 Hv and 77.82 MPa, 423 Hv, respectively.     

The Microstructure and thermal diffusivity of carbon nanostructures/Si3N4 composites processed using spark plasma sintering

Graphene nanoribbons (GNRs) were obtained by unzipping multiwall carbon nanotubes (MWCNTs). Three different silicon nitride-carbon nanostructures were prepared by spark plasma sintering (SPS): ceramic composites that contained 1 wt% carbon nanofibers (CNFs), 1 wt% MWCNTs and 1 wt% GNRs respectively. The α to β-Si₃N₄ transformation ratio and thermal diffusivity of GNR/Si₃N₄ composites were higher than both CNF/Si₃N₄ composites and MWCNT/Si₃N₄ composites. Furthermore, the higher thermal diffusivities of GNR/Si₃N₄ composites can primarily be attributed to the higher number of elongate β-Si₃N₄ grains.     

Synthesis and properties of AlN/MAS/Si3N4 ternary glass-ceramic composites with in-situ grown rod-like β-Si3N4 crystals

The AlN/MAS/Si₃N₄ ternary composites with in-situ grown rod-like β-Si₃N₄ were obtained by a two-step sintering process. The microstructure analysis, compositional investigation as well as properties characterization have been systematically performed. The AlN/MAS/Si₃N₄ ternary composites can be densified at 1650 °C in nitrogen atmosphere. The in-situ grown rod-like β-Si₃N₄ grains are beneficial to the improvement of thermal, mechanical, and dielectric properties. The thermal conductivity of the composites was increased from 14.85 to 28.45 W/(m K) by incorporating 25 wt% α-Si₃N₄. The microstructural characterization shows that the in-situ growth of rod-like β-Si₃N₄ crystals leads to high thermal conductivity. The AlN/MAS/Si₃N₄ ternary composite with the highest thermal conductivity shows a low relative dielectric constant of 6.2, a low dielectric loss of 0.0017, a high bending strength of 325 MPa, a high fracture toughness of 4.1 MPa m^1/2, and a low thermal expansion coefficient (α_{25–300 °C}) of 5.11 × 10^?6/K. This ternary composite with excellent comprehensive performance is expected to be used in high-performance electronic packaging materials.     

Microstructure and mechanical properties of the Si3N4/42CrMo steel joints brazed with Ag–Cu–Ti + Mo composite filler

The Si₃N₄ ceramic was joined to 42CrMo steel using Ag–Cu–Ti + Mo composite filler. Effect of Mo particles content on the microstructure and mechanical properties of the joints were investigated. Defect-free joints were received when the Si₃N₄/42CrMo steel joints were brazed with Ag–Cu–Ti + Mo composite filler. The results show that a continuous reaction layer which is composed of TiN and Ti₅Si₃ was formed near the Si₃N₄ ceramic. A double reaction layer which consists of Fe₂Ti and FeTi was also formed adjacent to 42CrMo steel, with Fe₂Ti being located near the steel. The central part of the joint is composed of Ag based solid solution, Cu based solid solution, Mo particles and some Cu–Ti intermetallic compounds. The maximal bending strength reached 587.3 MPa with 10 vol.% Mo particles in the joint, at which the joint strength was 414.3% higher than the average strength for the case without Mo particles addition.     

Synthesis of rod-like β-Si3N4 seed crystals with tailored morphology

β-Si₃N₄ seed crystals were synthesized by sintering (α+β)-Si₃N₄ powders with Y₂O₃+MgO additives at 1800 °C. Full α- to β-phase transformation was achievable at 1800 °C for 1 h. The pre-existing β-Si₃N₄ particles acted as nuclei during a sintering process. The length and mean aspect ratio of β-Si₃N₄ seed grains could be tailored by careful control of α/β-Si₃N₄ ratio, which resulted in various nuclei and driving force. The sample A95B5 with 5% β-nuclei shows a bimodal size distribution containing large amount of abnormal elongated β-Si₃N₄ grains with remarkable large diameter. With increasing the β-phase content from 5 wt% to 100 wt%, the average diameter and aspect ratio of the β-Si₃N₄ single crystals decreased from 1.43 µm to 0.92 µm and from 4.36 to 2.79, respectively.     

Effect of seeding on the thermal conductivity of self-reinforced silicon nitride

Thermal conductivity of Si₃N₄ containing large β-Si₃N₄ particles as seeds for grain growth was investigated. Seeds addition promotes growth of β-Si₃N₄ grains during sintering to develop the duplex microstructure. The thermal conductivity of the material sintered at 1900 °C improved up to 106 W m⁻¹ K⁻¹, although that of unseeded material was 77 Wm⁻¹ K⁻¹. Seeds addition leads to reduction of the sintering temperature with developing the duplex microstructure and with improving the thermal conductivity, which benefits in terms of production cost of Si₃N₄ ceramics with thermal conductivity. ©     

In situ synthesis of Si2N2O/Si3N4 composite ceramics using polysilyloxycarbodiimide precursors

In situ synthesis of Si₂N₂O/Si₃N₄ composite ceramics was conducted via thermolysis of novel polysilyloxycarbodiimide ([SiOSi(NCN)₃]_n) precursors between 1000 and 1500 °C in nitrogen atmosphere. The relative structures of Si₂N₂O/Si₃N₄ composite ceramics were explained by the structural evolution observed by electron energy-loss spectroscopy but also by Fourier transform infrared and ²⁹Si-NMR spectrometry. An amorphous single-phase Si₂N₂O ceramic with porous structure with pore size of 10–20 μm in diameter was obtained via a pyrolyzed process at 1000 °C. After heat-treatment at 1400 °C, a composite ceramic was obtained composed of 53.2 wt.% Si₂N₂O and 46.8 wt.% Si₃N₄ phases. The amount of Si₂N₂O phase in the composite ceramic decreased further after heat-treatment at 1500 °C and a crystalline product containing 12.8 wt.% Si₂N₂O and 87.2 wt.% Si₃N₄ phases was obtained. In addition, it is interesting that residual carbon in the ceramic composite nearly disappeared and no SiC phase was observed in the final Si₂N₂O/Si₃N₄ composite.     

Preparation and characterization of Si3N4-based composite ceramic tool materials by microwave sintering

Si₃N₄-based composite ceramic tool materials with (W,Ti)C as particle reinforced phase were fabricated by microwave sintering. The effects of the fraction of (W,Ti)C and sintering temperature on the mechanical properties, phase transformation and microstructure of Si₃N₄-based ceramics were investigated. The frictional characteristics of the microwave sintered Si₃N₄-based ceramics were also studied. The results showed that the (W,Ti)C would hinder the densification and phase transformation of Si₃N₄ ceramics, while it enhanced the aspect-ratio of β-Si₃N₄ which promoted the mechanical properties. The Si₃N₄-based composite ceramics reinforced by 15 wt% (W,Ti)C sintered at 1600 °C for 10 min by microwave sintering exhibited the optimum mechanical properties. Its relative density, Vickers hardness and fracture toughness were 95.73 ± 0.21%, 15.92 ± 0.09 GPa and 7.01 ± 0.14 MPa m^1/2, respectively. Compared to the monolithic Si₃N₄ ceramics by microwave sintering, the sintering temperature decreased 100 °C,the Vickers hardness and fracture toughness were enhanced by 6.7% and 8.9%, respectively. The friction coefficient and wear rate of the Si₃N₄/(W,Ti)C sliding against the bearing steel increased initially and then decreased with the increase of the mass fraction of (W,Ti)C., and the friction coefficient and wear rate reached the minimum value while the fraction of (W,Ti)C was 15 wt%.     

Nano/macro-hardness and fracture resistance of Si3N4/SiC composites with up to 13 wt.% of SiC nano-particles

Relations between composition and mechanical properties of the Si₃N₄/SiC micro/nano-composites were studied by combination of nano-indentation and Vickers indentation techniques. The Si₃N₄/SiC composites were prepared from crystalline Si₃N₄ powder doped with SiNC amorphous precursor and yttria as the sintering aid. During sintering the SiNC precursor crystallised to yield both SiC and Si₃N₄. The in situ formed SiC particles were located both inter- and intra-granularly. The presence of SiC nano-particles enhanced the nano- and macro-hardness, and the fracture toughness of the composites. The nano-hardness of Si₃N₄/SiC composites ranged between 20 and 24 GPa, and depends on the volume fraction of SiC. The nano-hardness of individual Si₃N₄ grains exhibited large scatter as the consequence of the presence of intra-SiC inclusions, which directly influence the measured values as the harder phase, or by generating large thermal stresses within Si₃N₄ grains. Consequently the scatter of nano-hardness was much larger than in case of macro-hardness where the measured values are averaged over large area. The nano-indentation of grain boundaries indicates that the boundaries are much softer than the surrounding matrix phase. Apart of indentation size effect (ISE) this is believed to be an additional reason why the measured values of macro-hardness are lower than the nano-hardness. The maximum fracture toughness (5.8 MPa m^1/2) was achieved for the composite with the total amount of 8 wt.% SiC, where a percolating network of intergranular SiC particles was formed, as indicated by the measurement of electrical resistivity.     

Improved electromagnetic absorbing properties of Si3N4–SiC/SiO2 composite ceramics with multi-shell microstructure

Porous Si₃N₄–SiC composite ceramic was fabricated by infiltrating SiC coating with nano-scale crystals into porous β-Si₃N₄ ceramic via chemical vapor infiltration (CVI). Silica (SiO₂) film was formed on the surface of rod-like Si₃N₄–SiC grains during oxidation at 1100 °C in air. The as-received Si₃N₄–SiC/SiO₂ composite ceramic attains a multi-shell microstructure, and exhibits reduced impedance mismatch, leading to excellent electromagnetic (EM) absorbing properties. The Si₃N₄–SiC/SiO₂ fabricated by oxidation of Si₃N₄–SiC for 10 h in air can achieve a reflection loss of ?30 dB (>99.9% absorption) at 8.7 GHz when the sample thickness is 3.8 mm. When the sample thickness is 3.5 mm, reflection loss of Si₃N₄–SiC/SiO₂ is lower than ?10 dB (>90% absorption) in the frequency range 8.3–12.4 GHz, the effective absorption bandwidth is 4.1 GHz.     

A strategy for fabricating textured silicon nitride with enhanced thermal conductivity

C-axis textured Si₃N₄ with a high thermal conductivity of 176 W m⁻¹ K⁻¹ along the grain alignment direction was fabricated by slip casting raw α-Si₃N₄ powder seeded with near-equiaxed β-Si₃N₄ particles and Y₂O₃–MgSiN₂ as sintering additives in a rotating strong magnetic field of 12 T, followed by gas pressure sintering at 1900 °C for 12 h at a nitrogen pressure of 1 MPa. The green material reached a relative density of 57%, with slip casting and the sintered material exhibited a relative density of 99% and a Lotgering orientation factor of 0.98. The morphology of the β-Si₃N₄ seeds had little effect on the texture development and thermal anisotropy of textured Si₃N₄. The technique developed provides highly conductive Si₃N₄ with conductivity to the thickness direction, which is a major advantage in practical use. The technique is also simple, inexpensive and effective for producing textured Si₃N₄ with high thermal conductivity of over 170 W m⁻¹ K⁻¹.     

Oxidation behaviour of Si3N4–TiN ceramics under dry and humid air at high temperature

The oxidation in air of Si₃N₄-based ceramics containing 35 vol.% of TiN secondary phase and different amounts of sintering additives has been studied at different temperatures up to 1400 °C in dry or humid environment. The oxidation starts by crystal growth of TiO₂ at the surface, then a multilayered scale develops under the rutile layer from 1000 °C. This subscale is composed of silicon nitride in which TiN particles are oxidized to agglomerates of rutile, glass and pores. The oxidation process is controlled by the matter transports, which take place in the intergranular phase. These transport phenomena are affected by the changes in distribution and composition of the glassy phase and by humidity which modifies the glass network structure and thus the in-diffusion rate. From 1200 °C, Si₃N₄ grains are also oxidized, the additional glass formed closes the residual porosities yielding scales more compact and developing an autoprotective behavior. At 1400 °C, glass phase crystallizes into cristobalite and the rutile top layer becomes discontinuous. Only composites with low amounts of sinter additives keep an autoprotective oxidation mode.     

Interfacial microstructure of the Si3N4/Si3N4 joint brazed with Cu–Pd–Ti filler alloy

Si₃N₄ ceramic was jointed with itself by active brazing with a Cu–Pd–Ti filler alloy. Interfacial microstructure of the Si₃N₄/Si₃N₄ joint was analyzed by EPMA, TEM and X-ray diffract meter. The results indicate that a TiN reaction layer with a thickness about 5 μm is formed at the interface between Si₃N₄ ceramic and filler alloy. The TiN reaction layer is composed of two zones: one next to the Si₃N₄ ceramic with grains of 100 nm and the other zone that connects with the filler alloy and has grains of 1 μm. The microstructure of the joint can be described as: Si₃N₄ ceramic/TiN layer with fine grains/TiN layer with coarsen grains/Cu[Pd] solid solution. Some new phases, such as Pd₂Si, PdTiSi, Ti₅Si₃ and TiN, were formed in the Cu[Pd] solid solution interlayer. With increasing brazing temperature from 1100 °C to 1200 °C, the thickness of the TiN reaction layer is not changed. Meanwhile, the amount and size of the TiN and Pd₂Si phases in the Cu[Pd] solid solution increase, while, the amount of the PdTiSi phase decreases.     

Enhanced thermal conductivity of low-temperature sintered borosilicate glass–AlN composites with β-Si3N4 whiskers

The effects of β-Si₃N₄ whiskers on the thermal conductivity of low-temperature sintered borosilicate glass–AlN composites were systematically investigated. The thermal conductivity of borosilicate glass–AlN ceramic composite was increased from 11.9 to 18.8 W/m K by incorporating 14 vol% β-Si₃N₄ whiskers, and high flexural strength up to 226 MPa were achieved along with low relative dielectric constant of 6.5 and dielectric loss of 0.16% at 1 MHz. Microstructure characterization and percolation model analysis indicated that thermal percolation network formation in the ceramic composites led to the high thermal conductivity. The crystallization of the borosilicate microcrystal glass also contributed to the enhancement of thermal conductivity. Such ceramic composites with low sintering temperature and high thermal conductivity might be a promising material for electronic packaging applications.     

Variation of sintering parameters at an early stage of densification affecting β-Si3N4-microstructure

The influence of sintering parameters at an early stage of densification on the evolution of a bimodal microstructure in Si₃N₄ ceramics was investigated. Commonly two different methods are pursued to design a bimodal Si₃N₄ microstructure: (i) annealing at a later sintering stage (T > 1850 °C) initiating β-Si₃N₄ grain growth via Ostwald ripening and (ii) seeding with β-Si₃N₄ nuclei, which abnormally grow during the liquid-phase sintering process. In this study, a third and novel method to design Si₃N₄ microstructures by affecting intrinsic nucleation phenomena at an early sintering stage is presented. In order to study the influence of sintering parameters on β-Si₃N₄ nuclei formation during the early stage of densification, temperature and pressure were systematically changed. Starting from identical green bodies (identical processing and doping), the variation of the sintering parameters affected intrinsic β-Si₃N₄ nucleation. This procedure allows variation in the fineness of the matrix as well as in the number and dimension of the large elongated β-Si₃N₄ grains embedded in the matrix. Since identical green bodies are used as starting material, the resulting microstructure can easily be tailored toward corresponding application needs.