共查询到20条相似文献,搜索用时 31 毫秒
1.
Paidi V.K. Griffith Z. Yun Wei Dahlstrom M. Urteaga M. Parthasarathy N. Munkyo Seo Samoska L. Fung A. Rodwell M.J.W. 《Microwave Theory and Techniques》2005,53(2):598-605
We report common-base medium power amplifiers designed for G-band (140-220 GHz) and W-band (75-110 GHz) in InP mesa double HBT technology. The common-base topology is preferred over common-emitter and common-collector topologies due to its superior high-frequency maximum stable gain (MSG). Base feed inductance and collector emitter overlap capacitance, however, reduce the common-base MSG. A single-sided collector contact reduces Cce and, hence, improves the MSG. A single-stage common-base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.7-dBm output power with 5-dB associated power gain at 172 GHz. A two-stage common-base amplifier exhibited 8.1-dBm output power with 6.3-dB associated power gain at 176 GHz and demonstrated 9.1-dBm saturated output power. Another two-stage common-base amplifier exhibited 11.6-dBm output power with an associated power gain of 4.5 dB at 148 GHz. In the W-band, different designs of single-stage common-base power amplifiers demonstrated saturated output power of 15.1 dBm at 84 GHz and 13.7 dBm at 93 GHz 相似文献
2.
Electric measurement and modelling of the emitter base junction behaviour of VLSI silicon transistor
A knowledge of the gain of the emitter base junction center is of great interest to evaluate several phenomena which occur in VLSI technology. These effects are mainly: —the edge effects of the emitter base junction, —the heavily doped emitter effects (bandgap narrowing)… We develop in this paper a method to measure the internal gain of the VLSI bipolar transistors using a weak avalanche multiplication in the collector. To verify our results we proposed a model which is convenient to use with our devices and consistent by comparison with some previous works. For the tested devices the ratio of the overall gain with the internal gain is about 0.5. Furthermore, the model allows a knowledge of the average intrinsic concentration of the degenerate emitter. 相似文献
3.
An expression that describes emitter current push-out to the emitter edges with consideration for avalanche multiplication of the current in the collector p–njunction of a bipolar transistor was derived. A strong power dependence of the avalanche multiplication coefficient on the base potential is shown to weaken the push-out effect and to smooth out the current distribution in the system. 相似文献
4.
Jalali B. Chen Y.-K. Nottenburg R.N. Sivco D. Humphrey D.A. Cho A.Y. 《Electron Device Letters, IEEE》1990,11(9):400-402
The avalanche process in the collector of abrupt Al0.48In0.52As-In0.53Ga0.47 As heterostructure bipolar transistors (HBTs) is reported. It is reported that the collector multiplication constant decreases monotonically with increasing base thickness. When the base thickness is less than the mean-free path for energy relaxation in the base, the avalanche process in the collector is enhanced by high-energy injection from the emitter. On the other hand, no such dependence is observed for long-base transistors with equilibrium base transport. These effects are expected as the emitter injection energy of 0.48 eV is appreciable compared to the impact ionization threshold of 0.83 eV in the InGaAs collector 相似文献
5.
Lee Q. Martin S.C. Mensa D. Smith R.P. Guthrie J. Rodwell M.J.W. 《Electron Device Letters, IEEE》1999,20(8):396-398
We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors (HBT's). Devices with 0.4-μm emitter and 0.4-μm collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cutoff frequency fmax is 820 GHz. The high fmax, results from the scaling of HBT's junction widths, from elimination of collector series resistance through the use of a Schottky collector contact, and from partial screening of the collector-base capacitance by the collector space charge 相似文献
6.
Submicron scaling of HBTs 总被引:2,自引:0,他引:2
Rodwell M.J.W. Urteaga M. Mathew T. Scott D. Mensa D. Lee Q. Guthrie J. Betser Y. Martin S.C. Smith R.P. Jaganathan S. Krishnan S. Long S.I. Pullela R. Agarwal B. Bhattacharya U. Samoska L. Dahlstrom M. 《Electron Devices, IEEE Transactions on》2001,48(11):2606-2624
The variation of heterojunction bipolar transistor (HBT) bandwidth with scaling is reviewed. High bandwidths are obtained by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. Narrow collector junctions can be obtained by using substrate transfer or collector-undercut processes or, if contact resistivity is greatly reduced, by reducing the width of the base ohmic contacts in a mesa structure. HBTs with submicron collector junctions exhibit extremely high fmax and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained 21 dB unilateral power gain at 100 GHz. If extrapolated at -20 dB/decade, the power gain cutoff frequency fmax is 1.1 THz. fmax will be less than 1 THz if unmodeled electron transport physics produce a >20 dB/decade variation in power gain at frequencies above 110 GHz. Transferred-substrate HBTs have obtained 295 GHz fT. The substrate transfer process provides microstrip interconnects on a low-ϵr polymer dielectric with a electroplated gold ground plane. Important wiring parasitics, including wiring capacitance, and ground via inductance are substantially reduced. Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz and per-stage gain-bandwidth products over 400 GHz, and master-slave latches operating at 75 GHz 相似文献
7.
基于0.18μm SiGe BiCMOS工艺,设计了一种应用于下一代移动通信3GPP LTE TDD2.6 GHz频段(Band38)的射频功率放大器(PA)芯片。射频功率放大器采用共发射极3级级联的全差分结构,提高了输出电压摆幅,减小了功率晶体管的集电极电流,且降低了寄生的键合线电感。在预放大级和中间放大级、功率级中分别设计了电阻偏置和有源偏置两种偏置电路以提高线性度性能,并通过MOS开关管实现功率控制功能。测试结果表明:在2.57~2.62 GHz工作频段内,正向增益S21大于30.5 dB,输入回波损耗S11和输出回波损耗S22分别均小于-13 dB,功率增益大于31 dB,输出1 dB压缩点功率达28.6 dBm,功率附加效率为18%。 相似文献
8.
《Electron Devices, IEEE Transactions on》1961,8(2):110-115
Highly linear amplification can be obtained with HF diffused-base transistors in the common base configuration. It is the purpose of this paper to 1) present experimental results to demonstrate this, 2) demonstrate the causes for this high degree of linearity and derive expressions for optimum bias voltages and currents (these results can be extended with certain restrictions to the common emitter and common collector configurations), and 3) present a general method for analytically treating nonlinearity in all transistor configurations. A push-pull amplifier using 2N509- or 2N1195-type transistors provided 13 db of gain, with signal-to-distortion ratios of 70 to 80 db for broad-band white noise signals with +3 dbm of average output power or sine wave signals with +15-dbm peak output power. The stability of this gain and linearity with temperature and interchange of transistors is high. This high degree of linearity is shown to be due to 1) cancellation of current sensitive nonlinearity in the emitter and collector resistances, 2) collector voltage bias adjusted so that the derivative of the collector conductance with respect to collector voltage is zero, and 3) the use of a high alpha cutoff frequency transistor. An expression derived for optimum bias was in good agreement with experiment. The nonlinear distortion in transistors is shown to be different from that found in most devices, in that there are frequency-sensitive and frequency-insensitive nonlinearities. A general analysis carried out including these terms was in good qualitative agreement with experiment. 相似文献
9.
着重分析了多晶硅发射极对提高电流增益的作用和低温下集电区中性杂质碰撞电离引起的电流倍增效应,导出多晶硅发射极晶体管电流增益的表达式,很好地解释了实验结果。 相似文献
10.
Huai Gao Chatchaikarn A. Li-Wu Yang Li G.P. 《Microwave and Wireless Components Letters, IEEE》2005,15(8):508-509
Three artificial transmission line sections followed by an input emitter follower buffer are used for constructing a new traveling wave matching structure to enhance the bandwidth of broadband amplifiers. An InGaP HBT MMIC broadband amplifier with 20-mW dc power consumption and a flat gain of 7.5dB over a frequency range from 30kHz to 23GHz is demonstrated. 相似文献
11.
A fully matched, broadband, high efficiency MMIC power amplifier using AlGaAs/GaAs HBTs has been designed and tested. At 7 V collector bias, this HBT amplifier produced 31 dBm CW peak output power with 9 dB gain and 55% peak power-added efficiency in the 9.5-14.5 GHz band. To the authors' knowledge, this is the highest efficiency ever achieved from a broadband MMIC power amplifier 相似文献
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13.
《Electron Devices, IEEE Transactions on》1964,11(9):423-427
A three-terminal dc measurement is made of avalanche multiplication of holes injected from the emitter into the collector junction of diffused-base germanium p-n-p transistors. The method is applicable to asymmetric thin-base transistors at currents at which dc base current is independent of base width when emitter to base voltage (VEB ) is held constant. Injected collector current and VEB are measured at constant emitter current as a function of collector to base voltage (V). VEB is measured to take base narrowing into account. Collector reverse current is balanced out. The advantages of this method over two-terminal measurements are that surface, space-charge recombination and internal field emission currents are balanced out and no a priori assumption of the form of the multiplication factorM(V) is needed. For collector barriers which are nearly stepn^{+}p junctions with the p-type resistivity in the neighborhood of 1 ohm-cm, the multiplication data, which cover the range1.05 siml M siml 2.0 , fit the Miller equationM^{-1} = 1 - (V/V_{B})^{n} n = 3.2 pm 0.2 in agreement with Miller's two-terminal measurements using alloy and grown-junction Ge transistors. The parameters VB from extrapolation of the present data agree within experimental error of five per cent with the collector diode breakdowns BVCBO measured by Miller. However, in the present measurements on diffused-base transistors, appreciable surface current multiplication occurs with the result that BVCBO measured at 1 ma is approximately 18 per cent less than VB . The absence of microplasma noise in the multiplied injected hole current indicates that multiplication occurs uniformly in the collector barrier under the emitter at least toM = 2 . 相似文献
14.
The authors estimate the GB (grain bandwidth) product limits and the noise performance of a new SAGM-APD (separate avalanche, grating, and multiplication avalanche photodiode) structure: the δ-doped SAGM-APD. It is shown that GB products in excess of 140 GHz for a 0.2-μm-thick multiplication layer and possibly larger GB products for smaller widths can be obtained. While recent calculations have predicted increased GB products for this δ-doped SAGM-APD structure, the authors explicitly prove using conventional theory that this is possible only with a concomitant increase in the multiplication noise. It is further demonstrated that it is essential to optimize the width of the multiplication layer for a given bit-rate to achieve minimum multiplication noise consistent with a GB product high enough to accommodate the requisite frequency response at the optimum gain. It is shown that the δ-doped SAGM-APD structure is a very good candidate for high bit-rate receiver applications 相似文献
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16.
Henry T. Minden 《Solid-state electronics》1973,16(10):1185-1188
Gallium arsenide diodes were made which had Schottky-barriers for both contacts. Devices which were too thick for space change reach-through to occur at breakdown showed microwave oscillations, while thin diodes did not oscillate. Additionally, the structures could be distinguished on the basis of the noise accompanying breakdown. The performance was analysed in terms of transistor theory in which there is avalanche multiplication in the collector space charge region. It was concluded that there is a smooth transition between the reachthrough breakdown characteristic of the BARITT and true avalanche breakdown. The nature of the breakdown depends on the base width and the emitter efficiency. 相似文献
17.
采用简单的双台面工艺制作了完全平面结构的5个单元、10个发射极指大面积的SiGe HBT.器件表现出了良好的直流和高频特性,最大电流增益β为214.BVCEO为9V,集电极掺杂浓度为1×1017 cm-3,厚度为400nm时,BVCBO为16V.在直流偏置下IC=30mA,VCE=3.0V得到fT和fmax分别为18.0GHz和19.3GHz,1GHz下最大稳定增益为24.5dB,单端功率增益为26.6dB.器件采用了新颖的分单元结构,在大电流下没有明显的增益塌陷现象和热效应出现. 相似文献
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19.
《Electron Device Letters, IEEE》2008,29(7):714-717
20.
Gain of a heterojunction bipolar phototransistor 总被引:2,自引:0,他引:2
《Electron Devices, IEEE Transactions on》1985,32(3):622-627
Analytical expressions have been derived for the collector current, optical gain, and quantum efficiency for a heterojunction, bi-polar phototransistor (HPT). These expressions can be utilized to optimize the current gain and quantum efficiency for HPT design. The presence of avalanche multiplication in the base-collector junction has been taken into account and shown to be a significant factor in determining the gain of an InGaAs/InP phototransistor. Experimental results of optical gain versus the collector-emitter voltage can only be explained in terms Of avalanche multiplication. 相似文献