金刚石薄膜的表面金属化及与Ti薄膜的界面扩散反应的AES研究

利用磁控溅射的方法在金刚石薄膜表面沉积了２５０ｎｍ厚的金属Ｔｉ层，通过３００￣６００℃的真空热处理，促进了Ｔｉ与金刚石之间的界面扩散反应。利用俄歇电子能谱研究了Ｔｉ／金刚石薄膜界面的结合状态，发现在界面上形成了Ｔｉ的碳化物。并发现Ｔｉ与金刚石薄膜发生了大幅度的界面扩散反应，Ｔｉ元素渗入金刚石层达６００ｎｍ，促进了Ｔｉ与金刚石之间形成良好的化学结合，为获得高性能的金刚石切削工具提供了可能。界面扩散反     

Ti镀层对金刚石-铜基合金复合材料界面结构和性能的作用

为了提高金刚石-铜合金复合材料的界面粘结强度,本文用差热分析(DTA)、X射线衍射分析、SEM观察及磨削试验研究了金刚石表面的Ti镀层对金刚石-铜基合金复合材料界面结构及性能的影响.结果表明,在600～1200℃镀Ti层与金刚石发生界面反应,在金刚石表面外延生成岛状TiC,从而实现了金刚石与铜基合金的冶金结合.镀Ti金刚石与铜合金的粘结强度可达8×107Pa.用镀Ti金刚石制成的铜基合金磨块对花岗岩的磨削比与不镀钛金刚石相比提高30%.     

Ni-Cr/Ti/瓷界面反应机制

采用磁控溅射技术,在Ni-Cr合金表面溅射一层Ti薄膜作为中间层,研究了Ni-Cr/Ti/瓷界面组织结构,产物种类、分布及反应机制。结果表明:Ni-Cr/Ti/瓷界面反应复杂,界面处形成的新物相有Ti2Ni,AlTi3,TiO2,SnCr0.14OX,NiCr2O4和Cr2O3。高温烤瓷过程中,Ti与Ni以稳定的化合物Ti2Ni形式结合,同时Ti与陶瓷中Al2O3反应生成AlTi3化合物,与SnO2和SiO2发生置换反应生成TiO2,TiO2与陶瓷中氧化物结合,更好的实现了Ni-Cr合金与陶瓷的连接。     

Ti/Al异种材料真空扩散焊及界面结构研究

采用钛板表面渗铝工艺成功地实现了Ti/Al的扩散连接,通过扫描电镜(SEM)、显微硬度、X射线衍射等,对Ti/Al扩散焊接头区的组织结构进行了分析.试验结果表明:Ti/Al扩散焊接头区由钛侧界面、扩散过渡区、铝侧界面组成;在Ti/Al扩散焊界面附近的过渡区中可能形成Ti3Al、TiAl和TiAl3金属间化合物.控制工艺参数能够减小生成的金属间化合物层的厚度.距扩散焊界面较远铝基体一侧的显微硬度为30～40HM,钛基体和过渡区界面附近没有明显的脆性相.     

Ti/Si(100)体系界面扩散反应动力学研究

采用移动边界条件下扩散问题的处理方法，综合界面反应和扩散两个过程对界面硅化物形成的影响，建立起Ti／Si（100）界面扩散反应动力学理论模型，并拟合快速热退火处理后试样界面Auger深度分析谱，得到Ti，Si在相应界质中扩散系数和表现反应活化能。研究结果表明，Ti／Si体系界面TiSi2生成经历了一个由反应动力学控制到扩散控制的过渡。Si从其晶格中解离并扩散到Ti／TiSi2界面是制约扩散过程的关键因素。     

旋转摩擦挤压加温法制备金刚石表面Ti涂层

为了实现金刚石表面金属化,提出了一种旋转摩擦挤压加温法在人造单晶金刚石表面制备Ti涂层.利用SEM和XRD,分析了Ti涂层内表面的微观形貌和界面间的物相组成,并采用能谱仪进行了元素分析,研究了扩散退火温度和保温时间对Ti涂层内表面物相组成的影响,并分析了金刚石/Ti涂层的界面形成机制.研究结果表明:经过旋转摩擦挤压涂覆...     

真空热压原位Al3Ti增强MgAl基复合材料合成机制

采用真空热压原位合成法制备Al₃Ti增强Mg-Al基复合材料。研究了烧结工艺对复合材料显微结构的影响。探讨了Al₃Ti的原位合成机制, 提出了Ti和Al的微观反应模型。采用XRD、 SEM等方法分析了复合材料的相组成及微观结构。结果表明, Mg-Al基复合材料组织致密, 原位合成增强相Al₃Ti颗粒在基体中均匀分布, 尺寸为0.5~2.0 μm, 与基体界面紧密结合, 同时存在少量残余的Ti和中间相Al-Ti。     

金刚石表面Cr金属化的界面扩散反应研究

利用直流磁控溅射法在金钢石颗粒表面沉积了厚度为１５０ｎｍ的金属Ｃｒ薄膜。ＳＥＭ研究表明在金刚石表面形成的Ｃｒ膜基本均匀,但有小的金属聚集体存在。俄歇深度剖析研究发现,在镀膜过程中Ｃｒ膜和金刚石基底间发生了显著的界面扩工用作用。相应的俄歇线形分析表明,沉积过程中在界面上发生化学反应形成了部分Ｃｒ２Ｃ３物种。溅射沉积功率对金刚石颗粒与金属Ｃｒ膜的界面反应有较大的影响,提高溅射功率可大大促进Ｃｒ元素的扩     

Ti基复合材料界面反应扩散的微观分析

通过SiC连续纤维增强Ti基复合材料的制备及在不同条件下的热处理试验,利用TEM,SEM,EDS及XRD分析技术研究复合材料的界面反应以及产物相的形成.研究结果表明:SiC /Ti复合材料界面发生了反应扩散,反应元素C,Ti,Si在界面反应层中出现浓度波动;界面反应产物被确认为是Ti3SiC2 ,TiC和 Ti5Si3,在靠近SiC侧出现Ti3SiC2和Ti5Si3单相区,靠近Ti基体侧为Ti5Si3单相区,中间为TiC Ti5Si3双相区;SiC/Ti复合材料界面相序列为SiC┃Ti3SiC2┃Ti5Si3┃TiC Ti5Si3┃Ti5Si3┃Ti.     

基体中Ti元素含量对金刚石/Cu-Ti复合材料热导率的影响

采用真空热压法制备了金刚石体积分数为63%的金刚石/Cu-Ti复合材料,研究了基体中Ti含量对金刚石/Cu-Ti复合材料界面显微结构和热导率的影响。随着Ti含量的增加,金刚石/Cu-Ti复合材料热导率先增加后减小。当基体中Ti含量为1.1wt%时热导率最高,为511 W/（m·K）。Ti含量小于1.1wt%时,烧结过程中两相界面间生成的碳化物数量和面积随Ti含量的增加而增加,优化了界面结合,提高了界面结合强度,增加了界面传热通道数量,使金刚石/Cu-Ti复合材料导热性能提高。Ti含量的增加同时伴随着碳化物热阻增加和基体导热性能的恶化。过量的Ti元素使低导热性能的碳化物层厚度增加,碳化物层本身热阻增加,界面热导降低,金刚石/Cu-Ti复合材料导热性能下降。     

Energetics of Ti atom diffusion into diamond film

Energetics of Ti atom in metallization of diamond film were studied by calculations using density functional theory (DFT) and a composite basis set. Cluster models consisting of more than 10 C atoms were chosen to simulate the diamond phase with their boundaries saturated with H atoms. When Ti atom diffuses from the surface into the bulk of diamond interstitially, the energy barriers were found to be about 40 eV. Ti was found to favor substitutional sites rather than interstitial sites in diamond crystal. Our results indicate that the high concentration of Ti in chemical vapor deposited diamond films after metallization would occupy the grain boundaries rather than the bulk of diamond grain.     

Formation process of the bonding joint in Ti/Al diffusion bonding

The process of the formation of Ti/Al diffusion bonding joints was studied by means of scanning electron microscopy (SEM), X-ray diffractometry (XRD) and shear strength measurement. Pure titanium and pure aluminum were used as bonding couples. The results show that the process of joint formation can be separated into four stages, and the product of the diffusion reaction is only TiAl₃ under a particular range of holding time. There is a delay time t_D before TiAl₃ is generated, which is mainly affected by temperature. The joint strength depends on the metallurgical combination percentage and the interface structure in the diffusion zone, and it can reach or even exceed the strength of pure aluminum after TiAl₃ forms a layer. The position where shear fracture occurs depends on interface structure in the diffusion zone.     

镀Ti金刚石/Al复合材料的热性能

通过盐浴镀方法实现金刚石表面镀Ti,并采用模压铸造方法制备镀Ti金刚石/Al复合材料。研究镀层对复合材料微观结构和热性能的影响。结果表明金刚石表面镀Ti改善了复合材料的界面结合,降低界面热阻,从而提高了复合材料的热性能,包括降低热膨胀系数,提高复合材料的热导率。采用850℃盐浴镀Ti,镀覆时间180min得到的镀Ti金刚石/Al复合材料热导率高达488W/(m.K),在温度范围50～300℃之间,其平均热膨胀系数为9×10-6/K。     

Formation of detonation diamond layers on silicon by the aerosol method

An aerosol method for deposition of nanometer-thick layers of detonation diamonds has been developed. Application of a suspension of deagglomerated diamond particles onto substrates from an aerosol provides deposition of small-size drops, with the ultrasonic spraying of the suspension precluding formation of secondary agglomerates of nanodiamond particles in the course of sample drying. The layers are promising for high-precision studies of the structure and chemical composition of the surface of isolated nanodiamond particles.     

碳纳米管-有机化蒙脱土多维纳米界面构筑及其对环氧树脂的增韧机制

分别采用混酸、环氧树脂（EP）和硅烷偶联剂对碳纳米管（CNTs）进行功能化处理,用十八烷基三甲基氯化铵对蒙脱土（MMT）进行有机化处理,将具有一维纳米尺度的CNTs和二维纳米尺度的有机化蒙脱土（OMMT）复合引入EP酸酐固化体系,通过溶液共混法制备纳米OMMT/EP、CNTs/EP、CNTs-OMMT/EP复合材料。使用简支梁冲击试验仪测试三种复合材料的冲击强度,并利用SEM观察纳米复合材料的冲击断面形貌。实验结果表明,当OMMT的含量为4wt%时,纳米OMMT/EP复合材料的冲击强度比未掺杂纳米组分的EP提高了16.7%。经硅烷偶联剂处理后的CNTs（Si-CNTs）能与EP基体形成良好界面,当Si-CNTs的含量为0.9wt%时,纳米Si-CNTs/EP复合材料冲击强度比未掺杂纳米组分的EP提高了84.0%。当OMMT的含量为4wt%、Si-CNTs的含量为0.9wt%时,纳米Si-CNTs-OMMT/EP复合材料的冲击强度比未掺杂纳米组分的EP提高了135.4%。管状CNTs和片层结构OMMT对EP的韧性具有协同提高作用。     

High vacuum tribology of polycrystalline diamond coatings

Polycrystalline diamond coatings have been grown on unpolished side of Si(100) wafers by hot filament chemical vapour deposition process. The morphology of the grown coatings has been varied from cauliflower morphology to faceted morphology by manipulation of the growth temperature from 700°C to 900°C and methane gas concentration from 3% to 1·5%. It is found that the coefficient of friction of the coatings under high vacuum of 133·32×10^?7 Pa (10^?7 torr) with nanocrystalline grains can be manipulated to 0·35 to enhance tribological behaviour of bare Si substrates.     

Study of the Ti/Al2O3 interface

The Ti/Al₂O₃ (1 ¯1 0 2) interface formation has been investigated by X-ray photoelectron spectroscopy and Auger electron spectroscopy (AES). The results showed that when an active metal titanium was evaporated on to a room-temperature Al₂O₃ (1 ¯ 1 0 2) surface in ultrahigh vaccum, a Ti/Al₂O₃ interface region of about 200 nm was formed, and in the first several monolayers of titanium, the titanium was oxidized due to the active oxygen anions on the surface. Therefore, the pure Ti/Al₂O₃ interface was replaced gradually by a titanium oxides/Al₂O₃ interface, which has a stronger interaction than the former. The change of shape of the photoemission lines and the shift of binding energy of aluminium, oxygen and titanium with increasing coverage of titanium showed that the formation of the Ti-O bond at the interface is due to titanium transferring its electrons to Al³⁺ via O^2– anions in the Al-O bond, whereby the Al³⁺ was reduced to metallic aluminium, Al⁰. The AES intensity profile also proved the existence of the reduced species Al⁰. This suggests that the reaction layer consists of a multiphasic mixture: the Ti-O type phase, the (Ti, Al)₂O₃ phase and metallic aluminium phase.