〈110〉轴向取向Fe83Ga17合金中原子间作用与磁致伸缩的关系

采用定向凝固的方法制备出棒状〈110〉轴向取向多晶Fe83Ga17样品,Fe83Ga17合金样品经过淬火处理后,饱和磁致伸缩应变λs可以达到2.42×10-4。实验发现样品的磁致伸缩应变与合金中的短程序密切相关。淬火处理后样品的磁性Fe原子周围的原子占位发生了改变,合金部分有序。文中采用"原子对模型"(pairmodel),从能量最小原理出发,分析讨论了Fe Ga合金中原子对间的相互作用与磁致伸缩应变的关系。     

热处理对快淬Fe83Ga17Ce0.8合金结构和磁致伸缩性能的影响

采用电弧熔炼法制备了稀土Ce掺杂的Fe83Ga17Ce0.8铸态合金,然后对其进行快淬处理,获得快淬态Fe83Ga17Ce0.8合金,最后对快淬态Fe83Ga17Ce0.8合金在不同温度(850℃、950℃和1050℃)下进行退火处理5h.用X射线衍射(XRD)、扫描电镜及能谱仪(SEM/EDS)和磁致伸缩测试方法研究了退火温度对合金结构和磁致伸缩性能的影响.结果表明,快淬态Fe83Ga17Ce0.88合金经退火处理后,合金中的CeFe2相转化为贫稀土Ce2Fe17相.随退火温度的升高,合金的磁致伸缩系数绝对值先减小后大幅度增大.退火温度为1050℃时,合金的磁致伸缩系数达最大(在外磁场为398 kA/m时,磁致伸缩系数为656×10-6).磁致伸缩系数的增大与该合金中形成较多的Ce2Fe17相以及合金中A2相沿[100]方向择优取向有关.     

快淬和退火对Fe_(83)Ga_(17)Ce_(0.8)合金结构和磁致伸缩性能的影响

采用电弧熔炼法制备了稀土Ce掺杂的Fe83Ga17Ce0.8铸态合金,然后对其进行快淬处理,获得Fe83Ga17Ce0.8快淬态合金,最后对Fe83Ga17Ce0.8快淬态合金在1 223K下进行退火热处理5h。用X射线衍射(XRD)、扫描电镜及能谱仪(SEM/EDS)和磁致伸缩测试方法研究了快淬和退火对合金结构和磁致伸缩性能的影响。结果表明,Fe83Ga17Ce0.8铸态合金由bcc结构的Fe(Ga)相和少量的CeFe2第二相组成。Fe83Ga17Ce0.8快淬态合金除了含有大量的Fe(Ga)相和少量的CeFe2相外,合金中还出现了非对称DO3结构的Fe3Ga相。Fe83Ga17Ce0.8快淬态合金经退火热处理后,合金中的CeFe2相转化为贫稀土Ce2Fe17相。在外磁场为557kA/m时,Fe83Ga17Ce0.8快淬态合金的磁致伸缩系数(3.82×10-4)明显大于铸态合金(3.56×10-4)和退火态合金(1.82×10-4)的磁致伸缩系数。     

第三组元(C、B)添加对Fe83Ga17合金相结构和磁致伸缩性能的影响

为了研究非平衡凝固条件下(Fe83Ga17)100-xMx(x=0、0.5、1、1.5;M=C、B)合金的相组成及其磁致伸缩性能,采用吹铸的方式制备了(Fe83Ga17)100-xMx,(x=0、0.5、1、1.5;M=C、B)合金,结果表明,合金保持了A2(bcc-Fe(Ga))相结构.C、B元素对合金微观组织产生了很大影响,C完全固溶于bcc-Fe中,B于晶界处大量富集,晶粒形状呈区域定向排列.添加C、B均对Fe83Ga17合金的磁致伸缩性能产生了抑制作用.添加C增大了弹性模量,当x=1时磁致伸缩值最大;添加B对合金组织产生了巨大影响,随着B含量的增加形成了明显的铸造织构,并且生成了富含Fe2B的相,x=1.5时磁致伸缩值最大.     

Co元素添加对Fe83Ga17合金结构及磁性能的影响

制备目标成分为Fe_(83-x)Co_xGa_(17)(x=0,0.5,1.5,2.5,3.5)系列的合金铸锭,研究了Co元素添加对该系列合金结构、磁致伸缩性能、磁性能及硬度的影响。实验结果表明,随着Fe-Ga合金中Co元素的增加,合金饱和磁致伸缩值先增加后降低,在x=1.5时,合金饱和磁致伸缩值最高,达到195·10~(-6),并且该成分合金在低场下具有高的磁致伸缩率。同时还发现,Fe_(83-x)Co_xGa_(17)系列合金相结构均为无序α-Fe体心立方结构,并且Co元素添加后,合金产生晶格畸变,该系列合金晶格常数随Co元素加入的变化表现为先减小后增大,与饱和磁致伸缩值先增后减的变化相对应。加入适量的Co元素还可以提高Fe-Ga升合金的饱和磁化强度,在x=1.5时达到195.6 emu/g,同时降低合金矫顽力,并提高合金硬度,在x=3.5时,合金硬度相比于Fe-Ga合金提升近15%。     

Fe-Ga-B合金室温塑性及轧制材料磁致伸缩性能

研究了0.5%(原子分数)B对Fe83 Ga17合金室温力学性能的影响及(Fe81 Ga19)99.5 B0.5轧制薄片磁致伸缩性能.结果表明,少量B添加提高了Fe-Ga合金的室温塑性,实现(Fe81 Ga19)99.5 B0.5合金的轧制成形.热处理对(Fe81 Ga19)99.5 B0.5合金薄片材料磁致伸缩性能有很大影响.在同一热处理制度条件下,磁致伸缩性能随变形量的增加而减小;对于变形量为93.5%的样品,同一热处理时间,样品磁致伸缩性能随热处理温度的升高而增加,同一热处理温度时,样品磁致伸缩性能都表现出先升高后降低的变化趋势,样品在1300℃保温2h后,磁致伸缩性能最好,达到1.65×10-4.热处理对(Fe81 Ga19)99.5 B0.5合金薄片材料磁致伸缩性能的影响归因于对样品织构的影响.具有{100}＜012＞织构样品的磁致伸缩性能最高,而{111}＜110＞和{111}＜112＞织构对应的磁致伸缩性能较低.     

真空磁场热处理对Fe-Ga-Al合金磁致伸缩的影响

采用电弧炉熔炼方法得到Fe82Ga18-xAlx(x=3,9,12)合金的多晶样品。利用X射线衍射(XRD)和金相观察对合金的相组成进行分析,并对其磁致伸缩系数进行测量。经过真空磁场热处理后,对Fe-Ga-Al合金的结构和磁致伸缩性能进行研究。结果表明,真空磁场热处理后Fe-Ga-Al合金磁致伸缩系数均有提高,其中Fe82Ga9Al9合金经磁场热处理后,磁致伸缩达到114×10-6;Fe82Ga15Al3合金经磁场热处理后,其磁致伸缩增幅最大,比处理前增加165%。     

Fe及Fe83Ga17和Fe83Ga17Pr0.3合金的微结构与磁致伸缩性能

本研究对比研究了Fe、Fe_(83)Ga_(17)及Fe_(83)Ga_(17)Pr_(0.3)磁致伸缩材料的微结构与磁致伸缩性能。采用真空非自耗电弧炉在氩气保护下熔炼制备了合金样品。采用X射线衍射仪(XRD)和光学显微镜(OM)分析观察了合金样品的晶体结构和显微组织。采用扫描电镜配合能谱仪(SEM/EDS)测定了稀土Pr元素在Fe_(83)Ga_(17)Pr_(0.3)合金中的分布。通过电阻应变法测量了合金的磁致伸缩性能。结果表明:Fe和Fe_(83)Ga_(17)合金均由单一的bcc结构A2相组成,而Fe_(83)Ga_(17)Pr_(0.3)合金由A2主相和少量的富稀土Pr相组成。稀土Pr掺杂使合金中的A2相沿〈100〉晶向择优取向。Fe及Fe_(83)Ga_(17)和Fe_(83)Ga_(17)Pr_(0.3)合金的微观组织分别呈现细长的条状晶、晶粒粗大的等轴晶和晶粒细小的柱状晶。Fe的磁致伸缩系数为负值,而Fe_(83)Ga_(17)和Fe_(83)Ga_(17)Pr_(0.3)合金的磁致伸缩系数均为正值,三种材料的磁致伸缩系数绝对值的排序为FeFe_(83)Ga_(17)Fe_(83)Ga_(17)Pr_(0.3)。     

Ni-Fe合金磁致伸缩波导丝特性研究

化学成分对磁致伸缩波导丝的性能产生重要影响.中频感应熔炼技术制备出Ni-Fe磁致伸缩合金铸锭,研究了Ni、Fe含量对合金磁性能、相结构以及合金金相的影响,并分析产生变化的原因.研究表明,提高Ni含量为43%时,合金的磁致伸缩系数最高、磁性γ相强度增强,而矫顽力变化不明显.     

铸态及快淬态Ni50Mn26Ga19Fe5合金的磁致应变

研究了铸态及快淬Ni50Mn26Ga19Fe5掺杂合金的磁致应变性能.结果表明,掺Fe的Ni-Mn-Ga合金也具有典型的热弹性马氏体相变过程和磁转变过程,但铸态合金的结构为7层调制型马氏体(7M),而快淬合金的结构为14层调制型马氏体(14M).铸态合金最大磁致应变可达0.1%,快淬薄带合金最大磁致应变只能达到0.0095%.Ni50Mn26Ga19Fe5铸态合金比快淬合金有更大的磁致应变,说明掺杂元素Fe在Ni-Mn-Ga合金中的作用较为复杂.     

Magnetic coupling in La0.67Ca0.33MnO3/La0.67Sr0.33CoO3/La0.67Ca0.33MnO3 sandwiches

La_0.67Ca_0.33MnO₃ (LCMO)/La_0.67Sr_0.33CoO₃ (LSCO)/LCMO trilayer films are fabricated on single-crystal substrates NdGaO₃ (110) and the interlayer coupling are investigated. Compared with LCMO single layer, sandwiches showed the enhanced metal-insulator transition temperature of LCMO layers. The magnetoresistance is dependent on spacer thickness and the peak value dramatically decreases when LSCO layer is thick enough because of shorting by the LSCO layer. The magnetic coercivity H_C shows a nonmonotonic behavior with changing spacer layer thickness and the waist-like hysteresis indicates that there is an indirect exchange coupling between the top and bottom LCMO layers across the spacer layer.     

Varistor properties of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-In2O3 ceramics

The varistor properties of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-In₂O₃ ceramics were investigated for different concentrations of In₂O₃. The increase of In₂O₃ concentration slightly increased the sintered density (5.60-5.63 g/cm³) and slightly decreased the average grain size (3.4-2.9 μm). The breakdown field increased from 6023 to 14822 V/cm with increasing concentration of In₂O₃. The nonlinear coefficient increased from 17.6 to 44.6 for up to 0.005 mol%, whereas the further doping caused it to decrease to 36.8. In₂O₃ acted as an acceptor due to the donor concentration, which decreases in the range of 1.02 × 10¹⁷ to 0.24 × 10¹⁷/cm³ with increasing concentration of In₂O₃.     

Nanocrystallization of SrBi2Nb2O9 from glasses in the system Li2B4O7---SrO---Bi2O3---Nb2O5

Transparent glasses in the system (100−x)Li₂B₄O₇–x(SrO---Bi₂O₃---Nb₂O₅) (10≤x≤60) (in molar ratio) were fabricated by a conventional melt-quenching technique. Amorphous and glassy characteristics of the as-quenched samples were established via X-ray powder diffraction (XRD) and differential thermal analyses (DTA) respectively. Glass–ceramics embedded with strontium bismuth niobate, SrBi₂Nb₂O₉ (SBN) nanocrystals were produced by heat-treating the as-quenched glasses at temperatures higher than 500 °C. Perovskite SBN phase formation through an intermediate fluorite phase in the glass matrix was confirmed by XRD and transmission electron microscopy (TEM). Infrared and Raman spectroscopic studies corroborate the observation of fluorite phase formation. The dielectric constant (_r) and the loss factor (D) for the lithium borate, Li₂B₄O₇ (LBO) glass comprising randomly oriented SBN nanocrystals were determined and compared with those predicted based on the various dielectric mixture rule formalism. The dielectric constant was found to increase with increasing SBN content in LBO glass matrix.     

PbSbBiS4-Sb2S3 and PbSbBiS4-Bi2S3 joins in the PbS-Sb2S3-Bi2S3 system

Phase equilibria along the PbSbBiS₄-Sb₂S₃ and PbSbBiS₄-Bi₂S₃ joins of the PbS-Sb₂S₃-Bi₂S₃ system have been studied for the first time using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements, and the phase diagrams of the joins have been mapped out. The joins are shown to be pseudobinary with limited series of terminal solid solutions. The solid solutions are p-type semiconductors.     

Syntheses of hollandite type Rb2Cr8O16, K2Cr2V6O16 and K2V8O16

Hollandite-type compounds, Rb₂Cr₈O₁₆, K₂Cr₂V₆O₁₆ and K₂V₈O₁₆, were synthesized under high P-T conditions up to 1200°C and 7GPa. The structural refinement using a single crystal of Rb₂Cr₈O₁₆ confirms that the structure is similar to that of K₂Cr₈O₁₆. Magnetic measurements indicate that Rb₂Cr₈O₁₆ is ferromagnetic below 295K, K₂Cr₂V₆O₁₆ paramagnetic down to 77K and K₂V₈O₁₆ has susceptibility anomaly at 175K. These compounds are all semiconductive and show discontinuities in temperature-resistivity curves at points corresponding to magnetic anomalies.     

Microstructures of YBa2Cu3O7/La0.7Ca0.3MnO3 and La0.7Ca0.3MnO3/YBa2Cu3O7 bi-layers grown on (001)LaAlO3

Epitaxial YBa₂Cu₃O₇/La_0.7Ca_0.3MnO₃ (YBCO/LCMO) bi-layers and La_0.7Ca_0.3MnO₃/YBa₂Cu₃O₇ (LCMO/YBCO) bi-layers were grown on (001)LaAlO₃ by pulsed laser deposition, and their microstructures were compared by transmission electron microscopy investigation. In the YBCO(100 nm)/LCMO(150 nm) bi-layers, the LCMO layer consists of columnar grains of ~ 17 nm in diameter and contains mixed orientation domains of [100]_c, [010]_c and [001]_c. The YBCO layer is totally c-axis oriented and the YBCO lattices are tilted − 2.5° to + 2.5° as they grew on the rough surfaces of LCMO columnar grains. For the LCMO(140 nm)/YBCO(140 nm) bi-layers, the LCMO/YBCO interface is sharp and flat. The initial 12-nm thickness of the YBCO layer is composed of c-axis oriented domains, and the upper part of YBCO layer is [100] oriented. The LCMO layer was predominantly [001]_c oriented while [100]_c-oriented domains were occasionally observed.     

Characterization of YBa2Cu3O7/PrBa2Cu3O7 superlattices

We investigated the structural and superconducting properties ofc-axis oriented (YBa₂Cu₃O₇) _nY /(PrBa₂Cu₃O₇) _npr superlattices with thicknesses of the individual layers down to one unit cell (10nY1; 18>nPr 1). By transmission electron microscopy and X-ray diffraction we find an excellent structural quality of the samples, though the quantitative analysis shows the existence of defects. In superlattices with decoupled YBa₂Cu₃O₇ layers of two unit cell thickness we find a highT _c value of 75 K. We probed the flux line structure in the superlattices by measurements of the critical current density in magnetic fields. The experiments show that the flux-line dynamics is dominated by the movement of pancake vortices.     

Vapour-liquid equilibria in the ternary mixtures N2---CH4---C2H6 and N2---C2H6---C3H8

A systematic study was performed with mixtures consisting of N₂, CH₄, C₂H₆ and C₃H₈, to investigate experimentally phase equilibria and caloric properties and to test the accuracy of thermodynamic correlations. The first part of this Paper reports results of T---p---x---y measurements on ternary systems in the range 20 < p < 120 bar and 140 < T < 220 K. The results are compared with data calculated by generalized equations of state.     

Structural study of Sr0.3Ba0.7Nb2O6 and La0.030Sr0.255Ba0.700Nb2O6 ceramic systems

Sr_0.3Ba_0.7Nb₂O₆ (SBN) and La_0.030Sr_0.255Ba_0.700Nb₂O₆ (LSBN) ceramic compounds have been prepared using the traditional ceramic method at two different calcination temperatures (900 and 1000 °C) and later sintered both at 1400 °C. A study of the effects of the calcination temperatures and La substitution on the morphological, compositional, and structural properties of SBN and LSBN is presented using scanning electronic microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD) analysis. From Rietveld refinement processes, the XRD patterns were interpreted to evaluate such effects in the structural parameters and the site occupation factors of the heavy metals and oxygen atoms. The effect of the incorporation of La resulted in a 0.25% cell contraction and turned out to be higher than the 0.08% dilation effect produced by the increase of calcination temperature. The La ion with similar effective ionic radius and higher electronegativity is incorporated into the structure occupying the A₁ site just like the Sr ions in the SBN compound. Differences in the site occupation factors between the SBN and LSBN samples lead to substantial changes in the physical properties such as temperature of relative dielectric constant maximum, relative dielectric constant, and dielectric loss, correlated with the distortion and the relative orientation of the oxygen octahedra.     

The effect of Bi1.5Zn0.5Nb0.5Ti1.5O7 cover layer on the dielectric and tunable properties of Ba0.6Sr0.4TiO3/Bi1.5Zn0.5Nb0.5Ti1.5O7 bilayered thin films

Bi_1.5Zn_0.5Nb_0.5Ti_1.5O₇ (BZNT) thin films with different thicknesses as cover layers were deposited on the Ba_0.6Sr_0.4TiO₃ (BST) thin films on the Pt/Ti/SiO₂/Si substrates by radio frequency magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of BST/BZNT heterogeneous bilayered films were investigated as a function of the thickness of BZNT films and the effect of BZNT films on the asymmetric electrical properties of BST/BZNT bilayered films was discussed. It was found that BZNT cover layer significantly improved the leakage current and the dielectric loss, and the dielectric constant and tunability of BST/BZNT bilayered thin films simultaneously decreased with the increasing thickness of BZNT films. The BST/BZNT bilayered thin film with a 50 nm BZNT cover layer gave the largest figure of merit (FOM) of 33.48 with the upper tunability of 55.38%. The asymmetric electrical behavior of BST/BZNT bilayered films is probably related to an internal electric field caused by built-in voltages at Pt/BST and BZNT/Au interfaces.