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染料敏化太阳能电池(DSC)由于其工艺简单、成本低廉、理论光电转换效率高,逐渐成为硅基太阳能电池的有力竞争者.DSC电池的光阳极主要起到对染料分子中激发出来的电子进行传导的作用,其光阳极薄膜大多数是由氧化物纳米晶制备的.氧化物纳米晶存在大量界面电阻,导致能量势垒,从而使染料分子中光生电子-空穴对不能有效分离,制约了DSC电池光电转换效率的提高.而高长径比的一维氧化物纳米光阳极薄膜有望降低界面电阻,促进电子-空穴对的有效分离,将是DSC电池光阳极材料开发的重要发展方向.详细论述了染料敏化太阳电池用一维纳米氧化物光阳极薄膜的研究进展. 相似文献
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量子点敏化太阳能电池(Quantum Dot-Sensitized Solar cells, QDSCs)制备工艺简单, 制造成本低廉, 是一种有希望的新型太阳能电池。QDSCs利用量子点具有光谱吸收强、尺寸可调和多激子效应等优点, 能够提高其光电转换效率; 同时, 利用无机量子点替代染料作为敏化剂, 能够解决染料敏化太阳能电池(DSCs)的稳定性问题。但是, QDSCs光电转换效率较低是制约其应用的主要问题。近年来, 通过改变和调控对电极的材料和电子特性提高QDSCs的光电效率的方法受到了广泛关注。本文综述了QDSCs对电极材料的制备方法、微观形貌和晶体结构; 重点分析了金属化合物、复合材料、杂化材料、多元金属硫族化合物、导电聚合物和碳材料对电极对量子点敏化太阳能电池的电荷转移阻抗、光电性能等参数的影响; 并分析影响其电催化活性和电子传输性能的主要因素。最后, 提出通过表面修饰、复合和杂化等方法构筑新型对电极材料, 进而改善和提高QDSCs转换效率和稳定性, 是今后的研究重点和研究方向。 相似文献
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R. Ranjusha P. Lekha K.R.V. Subramanian V. Nair Shantikumar A. Balakrishnan 《材料科学技术学报》2011,(11):961-966
Vertical ZnO nanotube (ZNT) arrays were synthesized onto an indium doped tin oxide (ITO) glass substrate by a simple electrochemical deposition technique followed by a selective etching process. Scanning electron microscopy (SEM) showed formation of well-faceted hexagonal ZNT arrays spreading uniformly over a largearea. X-ray diffraction (XRD) of ZNT layer showed substantially higher intensity for the (0002) diffractionpeak, indicating that the ZnO crystallites were well aligned with their c-axis. Profilometer measurements ofthe ZNT layer showed an average thickness of ~7 μm. Diameter size distribution (DSD) analysis showedthat ZNTs exhibited a narrow diameter size distribution in the range of 65–120 nm and centered at ~75nm. The photoluminescence (PL) spectrum measurement showed violet and blue luminescence peaks thatwere centered at 410 and 480 nm, respectively, indicating the presence of internal defects. Ultra-violet (UV)spectroscopy showed major absorbance peak at ~348 nm, exhibiting an increase in energy gap value of 3.4 eV.By employing the formed ZNTs as the photo-anode for a dye-sensitized solar cell (DSSC), a full-sun conversion efficiency of 1.01% was achieved with a fill factor of 54%. Quantum efficiency studies showed the maximumof incident photon-to-electron conversion efficiency in a visible region located at 520–550 nm range. 相似文献