共查询到19条相似文献,搜索用时 31 毫秒
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利用第一性原理研究了两种具有边缘缺陷石墨烯纳米结的自旋输运,即边界氢原子饱和和未被饱和两种情况。结果表明:边缘缺陷改变了电子的输运行为。对于完整的石墨烯纳米带,两种自旋的电子在费米能级附近是完全简并的;对于含有边缘缺陷的石墨烯纳米结,两种自旋的电子在费米能级附近的很大能量范围内表现出自旋分离。电子局域态密度可进一步说明这种输运行为。这些纳米结可产生与自旋相关的极化电流。特别对于未饱和的缺陷结,在任何偏压下都有较高的自旋滤波效率。 相似文献
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研究表面声波单电子输运(SAW/SET)器件中的量子化声电电流对于揭示表面声波驱动的单电子输运特性有重要意义,并且有可能应用于最子电流基准,从而把安培与基本电荷和频率联系起来。为此设计了一种高精度高智能测量系统用于测量表面声波单电子输运器件中的声电电流。通过采用高性能I—V转换器和小波去噪等措施,使系统的噪声峰峰值小于30fA;采用LabVIEW编写的测量程序和合适的硬件实现了智能化的自动测量。该系统已成功地应用到SAW/SET器件中弱电流的测量,为将来揭示表面声波驱动的单电子输运特性和量子电流基准的可能实现做了有益的探索。 相似文献
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李英德 《功能材料与器件学报》2010,16(6)
在第一性原理的基础上,对芳烃体系与金表面形成的分子线的电学特性进行了理论研究,利用密度泛函理论计算了分子及扩展分子的电子结构;定量计算了分子与金表面的相互作用能和电子跃迁谱;利用弹性散射格林函数法研究了分子线的伏-安特性.计算结果表明:HOMO和LUMO间的禁带宽度、π电子数目、分子与金表面的相互作用以及分子轨道的扩展性等因素都将影响电子在分子线内的输运特性. 相似文献
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液态金属电子输运性质的理论研究 总被引:1,自引:1,他引:0
液体的许多重要物理性质及结构稳定性都直接或间接与价电子状态有关,电子输运性质的研究因较直接揭示液体中价电子的变化而倍受重视。主要介绍液态金属电阻率和电势的理论研究现状,分析了获得其中关键参数熔体结构因子及原子间作用势的途径。 相似文献
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运用第一性原理的密度泛函理论,结合非平衡格林函数,研究了边缘裁剪对Zigzag石墨纳米带(ZGNRs)的电子结构与输运性能的影响。计算结果表明,对Zigzag石墨纳米带边缘的裁剪显著影响了体系的电子输运性能。其中,边缘裁剪使得金属型石墨纳米带的能隙打开,而且随着结构中的Zigzag边缘长度减少,能隙逐渐增大,使得体系由金属型向半导体型转变;同时,边缘裁剪使Zigzag金属型石墨烯纳米带的输运性能降低,电流-电压呈非线性变化,尤其对于M3体系而言,边缘的裁剪使体系表现出很好的开关特性. 相似文献
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采用分子动力学模拟纳米管中合金纳米线的结构演化以及纳米线电学特性的变化规律。量子效应导致纳米线的电流电压曲线呈现出非线性特点,且在低电压区会出现电导隙,其宽度是由最高分子占据轨道和最低分子未被占据轨道的差值决定。锡原子的掺杂削弱了原本硅锗合金材料内的电子穿透能力,当锡原子数目占整条纳米线原子数的百分之十甚至更多时,由于库仑阻塞效应,在电流电压曲线图的低电压区,电流随电压的变化甚微;当硅锗锡三者原子比例相同时,纳米线的库仑阻塞效应尤为明显。由于隧穿共振效应,电导随电压的增大出现许多共振峰,并且共振峰的数量也随锡原子比例的增加而增加。 相似文献
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采用扩展的Huckel方法与格林函数方法,分析了双Au电极作用下C60富勒烯分子的电子结构与电子输运特性。研究结果表明,C60富勒烯分子与Au电极“接触”后,其分子轨道能级发生了较大的变化,HOMO、LUMO间的能隙显著减小;C60与Au电极之间的结合既有共价键的成分,又有离子键的成分;C60富勒烯分子的电压-电导率曲线以及伏安曲线表现出了微妙的量子特性。 相似文献
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The electronic properties of black and blue phosphorus nanoribbons are investigated, which enables the proposal of junction‐free field‐effect transistors that comprise metallic armchair nanoribbons as electrodes and, in between, a semiconducting zigzag nanoribbon as channel material (cut out of a single sheet of monolayer black or blue phosphorus). Using first‐principles calculations and the nonequilibrium Green's function method, the proposed field‐effect transistors are characterized. It is found that it is possible to achieve outstanding performance, with high on/off ratios, low subthreshold swings, and high transconductances. 相似文献
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Pawan Kumar Srivastava Yasir Hassan Yisehak Gebredingle Jaehyuck Jung Byunggil Kang Won Jong Yoo Budhi Singh Changgu Lee 《Small (Weinheim an der Bergstrasse, Germany)》2019,15(11)
The finite energy band‐offset that appears between band structures of employed materials in a broken‐gap heterojunction exhibits several interesting phenomena. Here, by employing a black phosphorus (BP)/rhenium disulfide (ReS2) heterojunction, the tunability of the BP work function (Φ BP) with variation in flake thickness is exploited in order to demonstrate that a BP‐based broken‐gap heterojunction can manifest diverse current‐transport characteristics such as gate tunable rectifying p–n junction diodes, Esaki diodes, backward‐rectifying diodes, and nonrectifying devices as a consequence of diverse band‐bending at the heterojunction. Diversity in band‐bending near heterojunction is attributed to change in the Fermi level difference (Δ) between BP and ReS2 sides as a consequence of Φ BP modulation. No change in the current transport characteristics in several devices with fixed Δ also provides further evidence that current‐transport is substantially impacted by band‐bending at the heterojunction. Optoelectronic experiments on the Esaki diode and the p–n junction diode provide experimental evidence of band‐bending diversity. Additionally, the p+–n–p junction comprising BP (38 nm)/ReS2/BP(5.8 nm) demonstrates multifunctionality of binary and ternary inverters as well as exhibiting the behavior of a bipolar junction transistor with common‐emitter current gain up to 50. 相似文献
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Dong Xiang Hyunhak Jeong Takhee Lee Dirk Mayer 《Advanced materials (Deerfield Beach, Fla.)》2013,25(35):4845-4867
A mechanically controllable break junction (MCBJ) represents a fundamental technique for the investigation of molecular electronic junctions, especially for the study of the electronic properties of single molecules. With unique advantages, the MCBJ technique has provided substantial insight into charge transport processes in molecules. In this review, the techniques for sample fabrication, operation and the various applications of MCBJs are introduced and the history, challenges and future of MCBJs are discussed. 相似文献
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Dong Xiang Hyunhak Jeong Takhee Lee Dirk Mayer 《Advanced materials (Deerfield Beach, Fla.)》2013,25(35):4818-4818
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Yu Zhang Yun Zheng Kun Rui Huey Hoon Hng Kedar Hippalgaonkar Jianwei Xu Wenping Sun Jixin Zhu Qingyu Yan Wei Huang 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(28)
Recent progress in the currently available methods of producing black phosphorus bulk and phosphorene are presented. The effective passivation approaches toward improving the air stability of phosphorene are also discussed. Furthermore, the research efforts on the phosphorene and phosphorene‐based materials for potential applications in lithium ion batteries, sodium ion batteries, and thermoelectric devices are summarized and highlighted. Finally, the outlook including challenges and opportunities in these research fields are discussed. 相似文献
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Xue Yang Xi Zhou Lei Li Ning Wang Rui Hao Yanan Zhou Hua Xu Yingtao Li Guangming Zhu Zemin Zhang Junru Wang Qingliang Feng 《Small (Weinheim an der Bergstrasse, Germany)》2023,19(28):2206590
High operating temperature (HOT) broadband photodetectors are urgently necessary for extreme condition applications in infrared-guided missiles, infrared night vision, fire safety imaging, and space exploration sensing. However, conventional photodetectors show dramatic carrier mobility decreases and carrier losses with low photoresponsivity at HOT due to the increased carrier scattering in channels at high temperatures. Herein, the HOT broadband photodetectors from room temperature to 470 K are developed for the first time by large-area black phosphorus (BP)/PtSe2 films device arrays via a depletion-enhanced photocarrier dynamics strategy. Attributed to the 2D Schottky junction at BP/PtSe2 interface and resulting in full depleted working channels, the BP/PtSe2 photodetector arrays exhibit high tolerance to carrier mobility decrease during the increasing operating temperature in a wide wavelength range from 532 to 2200 nm. Thus, the photodetector shows a state-of-the-art operating temperature at 470 K with the photo-responsivity (R) and specific detectivity (D*) of 25 A W−1 and 6.4 × 1011 Jones under 1850 nm illumination, respectively. Moreover, BP/PtSe2 photodetector arrays show high-uniformity photo-response in a large area. This work provides new strategies for high-performance broadband photodetector arrays with HOT by Schottky junction of large-area BP/PtSe2 films. 相似文献
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We have investigated electrical conductance of the single C60 and benzene molecules bridging between metal electrodes. The single C60 and benzene molecular junctions were prepared in ultra high vacuum. The single molecular junctions showed the high conductance values (around 0.1–1 G0: G0 = 2e2/h), which were comparable to that of the metal atomic contact. The highly conductive single molecular junctions could be prepared by direct binding of the π-conjugated organic molecule to the metal electrodes without the use of anchoring groups. For comparison, the single 1,4-benzenediamine molecular junction was investigated in solution. The benzene molecule was bound to the Au electrodes via amine (anchoring group) for the single 1,4-benzenediamine molecular junction. The conductance of the single 1,4-benzenediamine molecular junction was 8 × 10−3G0. It was suggested that the anchoring groups acted as resistive spacers between the molecule and metal. 相似文献
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Niklas Friedrich Jingcheng Li Iago Pozo Diego Peña José Ignacio Pascual 《Advanced materials (Deerfield Beach, Fla.)》2024,36(27):2401955
Unimolecular current rectifiers are fundamental building blocks in organic electronics. Rectifying behavior has been identified in numerous organic systems due to electron-hole asymmetries of orbital levels interfaced by a metal electrode. As a consequence, the rectifying ratio (RR) determining the diode efficiency remains fixed for a chosen molecule-metal interface. Here, a mechanically tunable molecular diode exhibiting an exceptionally large rectification ratio (>105) and reversible direction is presented. The molecular system comprises a seven-armchair graphene nanoribbon (GNR) doped with a single unit of substitutional diboron within its structure, synthesized with atomic precision on a gold substrate by on-surface synthesis. The diboron unit creates half-populated in-gap bound states and splits the GNR frontier bands into two segments, localizing the bound state in a double barrier configuration. By suspending these GNRs freely between the tip of a low-temperature scanning tunneling microscope and the substrate, unipolar hole transport is demonstrated through the boron in-gap state's resonance. Strong current rectification is observed, associated with the varying widths of the two barriers, which can be tuned by altering the distance between tip and substrate. This study introduces an innovative approach for the precise manipulation of molecular electronic functionalities, opening new avenues for advanced applications in organic electronics. 相似文献