TbDyFe掺杂对(Ba_(0.85)Ca_(0.15))(Ti_(0.9)Zr_(0.08)Sn_(0.02))O_3无铅压电陶瓷组织与电性能的影响

为获得BCZTS无铅压电陶瓷优良的电性能,通过对其掺杂TbDyFe,采用传统固相烧结法制备(Ba0.85Ca0.15)(Ti0.9Zr0.08Sn0.02)O3-x TbDyFe(BCZTS-x TbDyFe)无铅压电陶瓷,分析不同TbDyFe(x=0~0.4wt.%)含量对BCZTS无铅压电陶瓷微结构、压电性能、介电性能和铁电性能的影响,并利用XRD、SEM等方法分析表征样品。结果表明:所有样品均为单一的钙钛矿结构;掺杂TbDyFe后陶瓷的晶粒尺寸变小。由介电温谱可知,掺杂TbDyFe后BCZTS体系出现介电弛豫行为。当掺杂x=0.1wt.%时,无铅压电陶瓷材料的综合性能优异:d33=500 p C/N,kp=40%,εr~5955,tanδ~1.9%,Pr=6.6μC/cm2,Ec=2 k V/cm。     

Sm2O3掺杂Bi2O3-ZnO-Nb2O5基陶瓷的结构与性能

研究了Sm2O3掺杂的bi2O3-ZnO-Nb2O5(BZN)基陶瓷(Bi1.5-xSmxZn0.5)(Zn0.5Nb1.5)O7(O≤x≤0.6,BSZN),的结构及介电性能.结果表明纯BZN陶瓷的结构为立方焦绿石单相;当Sm2O3掺杂量较少(O＜x≤0.5)时,样品的相结构仍然保持立方焦绿石单相;随着Sm2O3掺杂量的进一步增加(x≥0.6),样品出现其它相.同时,试样的介电性能随结构的变化而呈现有规律的变化.     

稀土氧化物Eu_2O_3掺杂对CaCu_3 Ti_4O_(12)陶瓷微结构及介电特性的影响

以稀土氧化物Eu_2O_3为添加剂,采用固相反应法制备了不同掺杂比例(质量比:x=0,0.2%,0.5%,1%)的CCTO陶瓷样品,利用SEM、XRD、4294A型高精密阻抗分析仪等测试手段对样品的微观结构、介电性能和交流电阻率进行了测试分析.掺杂之后样品的晶格结构并未发生改变,但是样品内部相对晶相含量和晶粒平均尺寸减小,同时掺杂阻碍了样品内部晶界处富铜相的生成;纯CCTO的XRD图谱中分别出现了CuO、TiO_2和CaCO_3杂相,掺杂样品的图谱中并未出现上述杂相;样品的介电性能与相同组分材料内部的相对晶相含量,晶粒平均尺寸和晶界处富铜相有很大关系.Eu_2O_3掺杂提高了样品介电性能的频率和温度稳定性.当掺杂量为0.2%和0.5%时,样品的介电性能得到较好改善效果.样品在低频40Hz和高频3.5MHz的交流电阻率测量结果很好的验证了Eu_2O_3掺杂导致的微结构变化对样品介电性能的影响.     

Ce~(3+)掺杂Na_(0.5)Bi_(8.5)Ti_7O_(27)铋层状陶瓷的结构与电性能研究

采用固相法制备了Ce~(3+)掺杂的Na_(0.5)Bi_(8.5–x)Ce_xTi_7O_(27)(NBT-BIT-x Ce,0≤x≤0.1)共生铋层状无铅压电陶瓷,研究了NBT-BIT-xCe陶瓷的结构和电学性能。研究结果表明所有陶瓷样品均为单一的铋层状结构,随Ce~(3+)掺杂量的增加,样品的畸变程度呈现上升趋势,同时陶瓷晶粒的平均尺寸不断减小,介温谱和差热分析结果表明样品的介电双峰均对应于陶瓷内部结构的铁电相变。Ce~(3+)掺杂可以显著减少陶瓷内部的氧空位浓度以及降低陶瓷的介电损耗,提升陶瓷的压电常数(d33),当x=0.06时,陶瓷的综合电性能最佳:压电常数(d_(33))达到27.5 pC/N,居里温度(TC)达到658.2℃,介电损耗(tanδ)为0.39%。     

PHASES AND PROPERTIES OF SYSTEM Pb(Zn_(1/3)Nb_(2/3))O_3—PbTiO_3 —Ba(Ti(0.85)Sn(0.15))O_3

本文合成并研究了Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3-Ba(Ti_(0.85)Sn_(0.15))O_3(PZN-PT-BTS)陶瓷的晶相组成及其介电、压电和铁电性能。Sn~(4+)离子的存在,使PZN-PT-BTS 陶瓷晶粒难以具有完全的钙钛矿结构。微量焦绿石的存在,对其电性能的影响并不很大。PZN-PT-BTS 具有良好的介电、压电和铁电特性。     

CeO_2掺杂制备Ba_(0.9)Ca_(0.1)Ti_(1-x)Sn_xO_3压电陶瓷的结构及电性能（英文）

采用传统的陶瓷烧结技术,通过添加0.15%(摩尔分数)CeO_2,在1 120℃烧结2h,成功制备了新型无铅压电陶瓷Ba_(0.9)Ca_(0.1)Ti_(1-x)Sn_xO_3,并且检测了陶瓷样品的微结构和电性能。XRD显示所有陶瓷样品均具有纯的钙钛矿结构,在室温下为典型的四方相,SEM显示适量添加锡离子可以提高陶瓷致密性。在室温下,锡离子改性的BaTiO_3基压电陶瓷在x=0.02处显示了优异的压电、介电和铁电性能(d_(33)=276pC/N,k_p=46%,ε_r=3 678,tanδ=2.4%,P_r=18.2μC/cm~2,E_C=1.12kV/mm)。这些优异的检测结果证实适当添加锡离子能改善BaTiO_3基压电陶瓷的电性能。     

Pb(Zn_(1/3)Nb_(2/3)O_3-PbTiO_3-Ba(Ti_(0.85)Sn_(0.15)O_3陶瓷的晶相组成与电性能

本文合成并研究了 Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3-Ba(Ti_(0.85)Sn_(0.15))O_3(PZN-PT-BTS)陶瓷的晶相组成及其介电、压电和铁电性能。Sn~(4+)离子的存在,使 PZN-PT-BTS 陶瓷晶粒难以具有完全的钙钛矿结构。微量焦绿石的存在,对其电性能的影响并不很大。PZN-PT-BTS 具有良好的介电、压电和铁电特性。     

半化学法制备（Bi2-xNdx）（Zn1/3Nb2/3）2O7微波介电陶瓷与介电性能的研究

采用半化学法制备微波介电陶瓷（Bi2-xNdx）（Zn1/3Nb2/3）2O7（0≤x≤0.6），系统地研究了陶瓷的相结构及低频介电性能。结果表明：当Nd^3＋取代量较少伍≤0．25）时，样品的相结构仍然保持单斜焦绿石单相，随着Nd^3＋取代量的进一步增加，样品中出现立方焦绿石相，样品结构呈现单斜相与立方相的共存。同时，样品的介电性能随Nd^3＋取代量的变化为：介电常数先增大后减小，而介电损耗先减小后增大，在X=0.25处取得最佳电性能，分另1是εr=83，tanδ=0．0029（100kHz）。     

(0.84-x)Na_(0.5)Bi_(0.5)TiO_3-0.16K_(0.5)Bi_(0.5)TiO_(3-x)SrTiO_3系无铅压电陶瓷结构与电性能

采用固相法制备了Bi补偿的(0.84-x)Na0.5Bi0.5TiO3-0.16K0.5Bi0.5TiO3-x SrTiO3(简称NBTKBT-xST)无铅压电陶瓷,研究不同ST掺量对体系陶瓷的结构与电性能的影响规律。结果表明,在掺杂范围内(0≤x≤0.06),材料均能形成单一的钙钛矿固溶体结构。随着x的增加,陶瓷晶体结构逐渐由三方相向四方相过渡,且该体系的三方-四方准同型相界(MPB)位于0.03≤x≤0.04。在此组成区域内,体系陶瓷的铁电与压电性能较好,其中x=0.04时,材料的电性能较好:压电常数d33=156 pC/N,平面机电耦合系数k p=0.29,相对介电常数εr=1116,介质损耗tanδ=4.1%,剩余极化强度P r=30.5μC/cm2,矫顽场E c=23.9 kV/cm。介电温谱和变温电滞回线表明体系陶瓷在T d以上可能存在极性相与非极性相共存。     

A位LiCe复合取代改性对Na_(0.5)Bi_(2.5)Nb_2O_9陶瓷性能的影响

用固相反应法制备了[(NaBi)1-x(LiCe)x]0.5Bi2Nb2O9(x=0.00,0.04,0.06和0.08)高温铋层压电陶瓷材料,分析了LiCe对Na0.5Bi2.5Nb2O9压电陶瓷的影响。LiCe掺杂促进了样品晶粒生长,引起样品晶格畸变,这极大地提高了该系列陶瓷样品的压电活性。LiCe掺杂还提高了掺杂样品压电、介电性能的温度稳定性。当x=0.06时,该系列陶瓷的压电常数提高到24pC/N,是纯Na0.5Bi2.5Nb2O9的2倍多,平面机电耦合系数为12%,厚度机电耦合系数为25%,加上高的居里温度,低的介电损耗(1kHz只有0.26%)和稳定的压电特性,表明LiCe改性使Na0.5Bi2.5Nb2O9高温铋层压电陶瓷具有很好的高温应用前景。     

CeO2掺杂制备Ba0.9Ca0.1Ti1-xSnxO3压电陶瓷的结构及电性能

采用传统的陶瓷烧结技术,通过添加0.15%(摩尔分数)CeO2,在1120℃烧结2h,成功制备了新型无铅压电陶瓷Ba0.9 Ca0.1 Ti1-x Snx O3,并且检测了陶瓷样品的微结构和电性能.XRD显示所有陶瓷样品均具有纯的钙钛矿结构,在室温下为典型的四方相,SEM显示适量添加锡离子可以提高陶瓷致密性.在室温下,锡离子改性的BaTiO3基压电陶瓷在x=0.02处显示了优异的压电、介电和铁电性能(d33=276 pC/N,kp=46%,εr=3678,tanδ=2.4%,Pr=18.2μC/cm2,EC=1.12 kV/mm).这些优异的检测结果证实适当添加锡离子能改善BaT iO3基压电陶瓷的电性能.     

0.94Na1/2Bi1/2TiO3-0.06BaTiO3:TiO2无铅复合陶瓷的结构及退极化温度研究

采用固相法将纳米TiO₂引入0.94Na_1/2Bi_1/2TiO₃-0.06BaTiO₃ (简称NBT-6BT)钙钛矿结构压电陶瓷晶界中, 成功制备出NBT-6BT: xTiO₂ (x=0, 0.05, 0.1, 0.2, 0.3) 0-3型复合结构陶瓷, 并系统地研究了掺杂TiO₂对陶瓷的结构及压电性能的影响。实验结果表明, 部分TiO₂进入晶格内部造成陶瓷单斜相Cc含量减少, 晶体对称性提高; 随着TiO₂的掺杂量的增加, 明显提高了NBT-6BT陶瓷的退极化温度。对NBT-6BT:0.1TiO₂样品, 在保持一定压电常数(69 pC/N)的前提下, 陶瓷的退极化温度相比纯NBT-6BT提升约88%, 此时介电损耗tanδ=0.044, 表明该材料是一种适用于更高温区间的新型无铅压电材料。     

Dielectric, piezoelectric, and ferroelectric properties of MnCO3-added 74(Bi1/2Na}1/2) TiO3-20.8(Bi1/2K1/2)TiO3-5.2BaTiO3 lead-free piezoelectric ceramics

74(Bi1/2Na1/2)TiO{i3}-20.8(Bi1/2K1/2)TiO3-5.2BaTiO3-x MnCO3 lead-free piezoelectric ceramics were synthesized by conventional solid oxide routine. The tetragonal 74(Bi1/2Na1/2)TiO3-20.8(Bi1/2K1/2)TiO3-5.2 BaTiO3 (BNKB) exhibits high depolarization temperature Td of 195°C; however, its properties are far from satisfactory for practical application and need to be improved. The experiments show that the addition of MnCO3 reduces the tetragonality c/a and increases the cell volume. In addition, it revealed that the suitable addition of MnCO3 promotes the sintering and increases the densities of BNKB ceramics. The addition of MnCO3 also enhances the relaxor behavior of BNKB ceramics due to the reconstruct of the disorder arrays. Due to the effect of the crystal lattice, grain growth, and relaxor behavior, the optimal electric properties were realized at MnCO3 addition x of 0.16: the dielectric permittivity εr = 1047, dielectric dissipation tanδ = 0.022, piezoelectric strain d33 = 140 pC/N, mechanical coupling kp = 0.18, mechanical quality Qm = 89 while the depolarization temperature Td stays relatively high at 175°C. The effect and mechanism of Mn doping on the electrical properties were discussed in detail.     

BaZrO3掺杂对(K0.49Na0.51)0.98Li0.02(Nb0.77Ta0.18Sb0.05)O3无铅压电陶瓷的结构与电性能的影响

采用固相反应法制备了(K_0.49Na_0.51)_0.98Li_0.02(Nb_0.77Ta_0.18Sb_0.05)O₃-xBaZrO₃ (NKNLST-xBZ, x = 0~0.020 mol)无铅压电陶瓷, 系统研究了BaZrO₃的掺杂量对陶瓷的压电、介电、机电和铁电性能的影响。结果表明: 随着BaZrO₃掺杂量x的增加, 陶瓷的晶体结构由正交相向四方相转变, 在x=0.005~0.008区间出现正交相与四方相两相共存的区域, 在此区域内陶瓷的晶粒变得细小且均匀, 介电损耗tanδ大幅降低, 压电常数d₃₃和平面机电耦合系数k_p增加。该体系陶瓷的介电常数ε T 33 /ε0则随着BaZrO₃的增加持续增加, 相变温度则向低温方向移动。当x=0.005时, 该组成陶瓷具有最佳的综合性能: 压电常数d33=372 pC/N, 平面机电耦合系数kp=47.2%, 介电损耗tanδ=3.1%, 以及较高的介电常数ε^T₃₃ /ε₀=1470和居里温度T_c=208℃。     

SrCaBi_4Ti_5O_(18)-BiMeO+3(Me=Ga,Mn)高温无铅压电陶瓷的制备及性能

采用固相合成法制备了(1-x)SrCaBi_4Ti_5O_(18-x)BiMeO_3(SCBT-xBMe,Me=Ga,Mn;0≤x≤0.02)铋层状压电陶瓷,研究了BiMeO_3掺杂对SrCaBi_4Ti_5O_(18)系陶瓷微观结构及电性能的影响。结果表明BiMeO_3掺杂并未改变SCBT陶瓷的晶体结构,所有样品均为单一的铋层状结构陶瓷;适量引入BiMeO_3能促使SCBT的晶粒长大且趋于均匀,并有助于SCBT电性能的优化。当BiMeO_3掺杂量为0.005(Me=Ga)和0.02(Me=Mn)时,材料的压电常数d33分别为18pC/N和20pC/N,同时材料具有高的居里温度(Tc=550℃)和低的介电损耗(tanδ0.15%)。此外,SCBTxBMe材料具有良好的压电稳定性,适合于制备高温高频压电器件。     

Influence of Nb2O5 doped amount on the property of BCTZ lead-free piezoelectric ceramics doped with Li2CO3

Ba_0.85Ca_0.15Ti_0.9Zr_0.1O₃ (BCTZ) lead-free piezoelectric ceramics doped with Nb₂O₅ (0.1, 0.3, 0.5, 0.7, 0.9 wt%) and Li₂CO₃ (0.6 wt%) were prepared by conventional solid-state reaction method. Influence of Nb₂O₅ doping amount on the piezoelectric property, dielectric property, phase composition and microstructure of prepared BCTZ lead-free piezoelectric ceramics doped with Li₂CO₃ were investigated by X-ray diffraction and scanning electron microscopy and other analytical methods. The results showed that the sintered temperature decreased greatly when the BCTZ lead-free piezoelectric ceramics were co-doped with Nb₂O₅ and Li₂CO₃; a pure perovskite structure of BCTZ lead-free piezoelectric ceramics co-doped with Nb₂O₅ and Li₂CO₃ sintered at 1,020 °C could be also obtained. The grain size decreased when Nb₂O₅ doping amount increased. The piezoelectric constant (d₃₃), the planar electromechanical coupling factor (k_p), the relative dielectric constant (ε_r) of BCTZ ceramics doped with Li₂CO₃ increased firstly and then decreased, the dielectric loss (tanδ) decreased firstly and then increased when Nb₂O₅ doping amount increased, indicating that Nb₂O₅ was “soft” additive. When Nb₂O₅ doping amount (z) was 0.7 wt% and Li₂CO₃ doping amount was 0.6 wt%, the BCTZ ceramics sintered at 1,020 °C possessed the best piezoelectric property and dielectric property, which d₃₃ was 238 pC/N, k_p was 29.33 %, ε_r was 4,691, tanδ was 2.07 %.     

La2O3、Y2O3掺杂对(Na0.5Bi0.5)0.94Ba0.06TiO3无铅压电陶瓷性能的影响

以(Na0.5Bi0.5)0.94Ba0.06TiO3为基体,研究了单、双组分掺杂La2O3、Y2O3对BNBT6陶瓷的压电和介电性能及微观结构的影响。XRD分析表明:掺杂La2O3、Y2O3均得到钙钛矿结构。SEM分析表明,分别掺杂0.2%La2O3和0.2%Y2O3使得陶瓷晶粒增大,压电常数提高,双组分掺杂La2O3、Y2O3在掺杂量0.12%La2O3+0.08%Y2O3时,压电常数d33增大到最大值144.6×10-12C/N,介质损耗降低到最小值0.039。     

Sm2O3掺杂(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3无铅压电陶瓷的制备与性能

采用固相合成法制备了Sm2O3掺杂的(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3(BCZT)无铅压电陶瓷.借助XRD、SEM等手段对该陶瓷的显微结构与电性能进行了研究.结果表明,Sm2O3的掺杂降低了BCZT无铅压电陶瓷的烧结温度并使居里温度点Tc从85℃提高到95℃.当Sm2O3掺杂量为0.02wt%～0.1wt%时,样品具有典型ABO3型钙钛矿结构.Sm2O3掺杂量为0.02wt%时,所得陶瓷样品具有最优综合电性能,其压电常数d33、机电耦合系数kp、机械品质因子Qm、介电损耗tanδ和介电常数εr分别为590 pC/N、0.52、43、1.3%和3372.     

Dielectric and piezoelectric properties of CeO2-added nonstoichiometric (Na0.5K0.5)0.97(Nb0.96Sb0.04)O3 ceramics for piezoelectric energy harvesting device applications

In this study, nonstoichiometric (Na(0.5)K(0.5))(0.97)(Nb(0.96)Sb(0.04))O(3) ceramics were fabricated and their dielectric and piezoelectric properties were investigated according to the CeO(2) addition. In this ceramic composition, CeO(2) addition improved sinterability, electromechanical coupling factor k(p), mechanical quality factor Q(m), piezoelectric constant d(33), and g(33). At the sintering temperature of 1100°C, for the 0.2wt% CeO(2) added specimen, the optimum values of density = 4.359 g/cm(3), k(p) = 0.443, Q(m) = 588, ε(r) = 444, d(33) = 159 pC/N, and g(33) = 35 × 10(-3) V·m/N, were obtained. A piezoelectric energy harvesting device using 0.2 wt% CeO(2)- added lead-free (K(0.5)Na(0.5))(0.97)(Nb(0.96)Sb(0.04))O(3) ceramics and a rectifying circuit for energy harvesting were fabricated and their electrical characteristics were investigated. Under an external vibration acceleration of 0.7 g, when the mass, the frequency of vibration generator, and matching load resistance were 2.4 g, 70 Hz, and 721 Ω, respectively, output voltage and power of piezoelectric harvesting device indicated the optimum values of 24.6 mV(rms) and 0.839 μW, respectively-suitable for application as the electric power source of a ubiquitous sensor network (USN) sensor node.     

Effects of Fe2O3 doping on the microstructure and piezoelectric properties of 0.55Pb(Ni1/3Nb2/3)O3-0.45Pb(Zr0.3Ti0.7)O3 ceramics

0.55Pb(Ni_1/3Nb_2/3)O₃-0.45Pb(Zr_0.3Ti_0.7)O₃(PNN-PZT) ceramics with different concentration of xFe₂O₃ doping (where x = 0.0, 0.8, 1.2, 1.6 mol%) were synthesized by the conventional solid state sintering technique. X-ray diffraction analysis reveals that all specimens are a pure perovskite phase without pyrochlore phase. The density and grain size of Fe-doped ceramics tend to increase slightly with increasing concentration of Fe₂O₃. Comparing with the undoped ceramics, the piezoelectric, ferroelectric and dielectric properties of the Fe-doped PNN-PZT specimens are significantly improved. Properties of the piezoelectric constant as high as d₃₃ ~ 956 pC/N, the electromechanical coupling factor k_p ~ 0.74, and the dielectric constant ε_r ~ 6095 are achieved for the specimen with 1.2 mol% Fe₂O₃ doping sintered at 1200 °C for 2 h.