一种制备镶嵌荷电膜的新材料MsISIMs五嵌段共聚物的合成与表征

从分子设计出发，合成了一种用于制备镶嵌荷电膜的新材料：聚（４－甲基苯乙烯－异戊二烯－苯乙烯－异戊二烯－４－甲基苯乙烯）三元五嵌段共聚物，并用ＦＴＩＲ，＾１Ｈ－ＮＭＲ，ＧＰＣ，ＤＳＣ，ＴＥＭ等对共聚产物进行了表征，证实了ＭｓＩＳＩＭｓ是制备镶嵌荷电膜的理想膜材料。     

聚(甲基丙烯酸丁酯+(4-乙烯基)吡啶)共聚物膜的富氧性能研究

通过自由基共聚合反应，合成了一系列不同分子量、不同乙烯基吡啶基的聚（甲基丙烯酸丁酯 （4-乙烯基）吡啶）共聚物，并以低真空度法测试了其氧氮渗透性能。结果表明，随着共聚物膜中乙烯基吡啶含量的增加，共聚物的密度、玻璃化转变温度及氧氮选择性都随之增加，但氧氮渗透率和扩散系数、溶解度系数却相应下降。     

基于新型正极材料的全固态锂二次电池

氧亚甲基连接（２－乙烯基吡啶－氧乙烯）嵌段共聚物经ＬｉＣｌＯ４和ＴＣＮＱ掺杂后的络合物作正极材料，能有效地降低全固态锂二次电池的内阻，并能促进锂离子在正极及正极与电解质之间的传递，以降低电池的内阻。     

含聚二甲基硅氧烷的聚醚聚氨酯膜透气性及表面性质研究

以聚二甲基硅氧烷（ＰＤＭＳ）／聚四氢呋喃（ＰＴＭＯ）为软段，４，４＇－二环己基甲烷二异氰酸酯（ＨＭＤＩ）为硬段（丁二醇ＢＤ为扩链剂）制成的多相嵌段共聚物作为基质材料，进行了气体（Ｏ２和Ｎ２）透过性试验，同时对膜材料进行了ＥＳＣＡ表面分析。结果表明，共聚物膜的透气性能取决于材料中连续相组分，随着软段中ＰＤＭＳ含量的改变而变化。当ＰＤＭＳ含量较高时，共聚物膜显示出ＰＤＭＳ均聚物的特性，具有较高的气体秀     

嵌段共聚有机硅氧烷的合成及其氧化热稳定性研究

采用对－双（二甲基－锂氧硅基）苯撑作引发剂，Ｎ，Ｎ－二甲基甲酰胺作促进剂，不同的有机环四硅氧烷作单体，制备了数种不同组成的聚二苯基硅氧烷（Ｐ）－聚二甲基－甲基乙烯基硅氧烷（ＭＶ）－聚二苯基硅氧烷（Ｐ）三嵌段（Ｐ－ＭＶ－Ｐ）共聚物。这些嵌段共聚物，经石油醚溶解，乙醇萃取低分子量物质，得到了具有良好的氧化热稳定性的有机硅材料。     

胶乳型互穿聚合物网络研究 Ⅲ.环氧树脂/聚丙烯酸酯Semi-LIPN的结构与性能

通过ＩＲ、ＤＳＣ、ＴＧ、ＴＥＭ、溶胀比测定等方法，对丙烯酸丁酯－苯乙烯－甲基丙烯酸甲酯（ＢＡ－Ｓｔ－ＭＭＡ）交联共聚物的结构和ＥＰ／Ｐ（ＢＡ－Ｓｔ－ＭＭＡ）Ｓｅｍｉ－ＬＩＰＮ（ＥＰ为环氧树脂）的结构、热稳定性、溶胀性及乳胶膜的吸水性、乳胶粒形态进行了研究。结果表明，ＢＡ－Ｓｔ－ＭＭＡ共聚物中主要是无规共聚物，也含有嵌段或接枝共聚的链段，但并不太长；当该Ｓｅｍｉ－ＬＩＰＮ受热时，其中的ＥＰ因未交联而先行分解；ＥＰ的加入使乳胶膜的吸水性降低；在乳胶粒的测试过程中，由于分散程度不同还观察到了网络结构。     

胶乳型互穿聚合物网络研究：Ⅲ.环氧树脂／聚丙烯酸酯Sem …

通过ＩＲ，ＤＳＣ，ＴＧ，ＴＥＭ溶胀比测定等方法，对丙烯酸丁酯－苯乙烯－甲基丙烯酸甲酯（ＢＡ－Ｓｔ－ＭＭＡ）交联共聚物的结构和ＥＰ／Ｐ（ＢＡ－Ｓｔ－ＭＭＡ）Ｓｅｍｉ－ＬＩＰＮ（ＥＰ为环氧树脂）的结构，热稳定性，溶胀性及乳胶膜的吸水性，乳胶粒开形态进行了研究。结果表明：ＢＡ－Ｓｔ－ＭＭＡ共聚物中主要是无规共聚物，也含有嵌段或接枝共聚链段，但并不太长；当该Ｓｅｍｉ－ＬＩＰＮ受热时，其中的ＥＰ因未交联而先     

4—丙烯酸—4‘—硝基—偶氮苯聚合物的Langmuir—Blodgett薄膜及其光致…

本文考察了聚丙烯酸（４＇－对硝基）偶氮苯酯－４在气／水界面上形成的单分子膜，在氟化钙单晶片上挂制了１￣１７层的Ｙ型Ｌａｎｇｍｕｉｒ－Ｂｌｏｄｇｅｔｔ薄膜，以紫外吸收光谱研究了其顺－反异构光化学反应。结果表明，聚丙烯酸（４＇－对硝基）偶氟苯酯－４可以挂制质量较好的ＬＢ膜；主链乙烯基为侧链偶氮苯基团留出的空间明显提高了顺－反异构反应的速度和可逆性，改善了在光电子器件中实际应用中的基本性能；因而以高分子     

嵌段共聚有机硅氧的合成及其氧化热稳定性研究

采用对－双（二甲基－锂氧硅基）苯撑作引发剂，Ｎ，Ｎ－二甲基甲酰胺促进剂，不同的有机环四硅氧烷作单体，制备了数种不同组成的聚二苯基硅氧烷－聚二甲基－甲基乙烯基硅氧烷二苯基硅氧烷三嵌段共聚物。这些嵌段共聚物，经石油醚溶解，乙醇萃取低分子量是到了具有良好的氧化热稳定性的有机硅材料。     

ISI/IMs共混型镶嵌荷电膜的研制

以嵌段共聚物ＩＳＩ和ＩＭｓ的共混物为原料，ＰＰ微孔膜为基膜制成了复合膜，再经过交联、季胺化和磺化而制成了一种新的共混型镶嵌荷电膜。进一步的研究显示，该膜具有典型的镶嵌荷电膜结构及性能特点，与ＭｓＩＳＩＭｓ五嵌段荷电膜具有相似的膜形态与膜结构；电性能也十分相近，膜面电阻分别为３５０、９７０Ω·ｃｍ＾２，电压渗系数分别为８×１０＾－９、６．１×１０＾－９Ｖ／Ｐａ。表明可以用ＩＳＩ／ＩＭｓ共混物代替五嵌     

New vinylpyridine anion exchangers for recovering thorium and nonferrous metals from nitric and hydrochloric acid solutions

The ability of new vinylpyridine anion exchangers of AXIONIT VPA series, produced by Axion—Rare and Noble Metals Joint-Stock Company (Russia), to take up Th from nitric acid solutions was studied. The static capacity of the sorbents for Th increases with increasing HNO₃ concentration in the initial solution and reaches a maximum at 7–8 M HNO₃. The sorbed Th can be completely desorbed with dilute HNO₃ solutions. The stability of the sorption characteristics of the ion exchangers in multiple sorption–desorption cycles was evaluated. Vinylpyridine anion exchangers of AXIONIT VPA series well compete in the sorption and kinetic characteristics with VP-1Ap anion exchanger and can be successfully used for recovering Th and Pu from nitric acid solutions. Sorbents of the AXIONIT VPA series also take up copper and cobalt chloride complexes from hydrochloric acid solutions, which allows their use, e.g., for treatment of alkali metal chloride solutions to remove nonferrous metal impurities.     

Superconducting and normal state properties of ErRh4B4 and LuRh4B4

Detailed heat capacity measurements of the ternary compounds ErRh₄B₄ and LuRh₄B₄ have been performed between 0.5 and 36 K and in magnetic fields up to 4 kG, yielding new information on crystal field effects in these materials and on the influence of externally applied magnetic fields on the coupled superconducting-ferromagnetic reentrant transition in ErRh₄B₄. Static magnetic susceptibility data on LuRh₄B₄ are presented which allow qualitative conclusions to be drawn regarding the magnitude of exchange enhancement and orbital paramagnetic effects in the RERh₄B₄ compounds. The electrical resistivity of ErRh₄B₄ has also been determined between 4 K and room temperature.This research was supported by the Department of Energy under Contract Number Ey-76-S-03-0034-PA227-3 (LDW, HBM, RWM, MBM) and by the National Science Foundation under Grant Number NSF/DMR77-08469 (DCJ). One of us (RWM) thanks the National Science Foundation for a postdoctoral fellowship.     

10Cr4Ni4Mo4V钢和Cr4Mo4V钢的特性与断裂行为

对１０Ｃｒ４Ｎｉ４Ｍｏ４Ｖ钢和Ｃｒ４Ｍｏ４Ｖ钢的特性与断裂行为进行了试验研究。结果表明,１０Ｃｒ４Ｎｉ４Ｍｏ４Ｖ钢经微氮渗碳热处理后,其表面硬度、残余应力、断裂韧性及裂纹扩展速率均优于Ｃｒ４Ｍｏ４Ｖ钢的。     

球形NH4FePO4·H2O的制备

以柠檬酸铵作络合剂通过控制结晶法制备了的球形NH4FePO4·H2O,用扫描电镜观察了颗粒的形貌和分布.通过研究加料方式、反应温度、滴加速度、搅拌速度、反应物浓度等对颗粒形态的影响,得到了制备球形NH4FePO4·H2O的最佳工艺条件.     

Nano-phases of NaBH4 and KBH4

Phase stability and chemical bonding of beta-NaBH4 and beta-KBH4 derived nano-structures and possible low energy surfaces of them from thin film geometry have been investigated using ab initio projected augmented plane wave method. Structural optimizations based on total energy calculations predicted that, for beta-NaBH4 and beta-KBH4 phases, the (011) and (101) surfaces are more stable among the possible low energy surfaces. The predicted critical size of the nano-cluster for beta-NaBH4 and beta-KBH4 is 1.35 and 1.8 nm, respectively. The corresponding critical diameter for the nano-whisker is 2.6 and 2.8 nm respectively for beta-NaBH4 and beta-KBH4. Structural optimization based on total energy calculations show that the bond distances in the surfaces of nano-whisker are found to be higher than that in the bulk material and the calculated H site energies and bond overlap population analysis suggesting that it is considerably easier to remove hydrogen from the surface of the clusters and nano-whiskers than that from the bulk crystals.     

Dielectric properties of Bi4(GeO4)3 and Bi4(SiO4)3

Dielectric constant, dielectric loss and conductivity of Bi₄(GeO₄)₃ and Bi₄(SiO₄)₃ single crystals have been measured as a function of frequency and in the temperature range from liquid nitrogen temperature to 400° C. The values of the static dielectric constant at room temperature are 16·4 and 13·7 for Bi₄(GeO₄)₃ and Bi₄(SiO₄)₃ respectively. The plots of log (σ) against reciprocal temperature at different frequencies of these crystals merge into a straight line beyond 250°C and the activation energies calculated in this region are found to be 0·95 eV and 1·2 eV for Bi₄(GeO₄)₃ and Bi₄(SiO₄)₃ respectively.