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1.
Dense, ZrO2-dispersed Si3N4 composites without additives were fabricated at 180 MPa and ∼1850° to 1900°C for l h by hot isostatic pressing using a glass-encapsulation method; the densities reached >96% of theoretical. The dispersion of 20 wt% of 2.5YZrO2 (2.5 mol% Y2O3) in Si3N4 was advantageous to increase the room-temperature fracture toughness (∼7.5 MPa˙m1/2) without degradation of hardness (∼15 GPa) because of the high retention of tetragonal ZrO2. The dependence of fracture toughness of Si3N4–2.5YZrO2 on ZrO2 content can be related to the formation of zirconium oxynitride because of the reaction between ZrO2 and Si3N4 matrix in hot isostatic pressing.  相似文献   

2.
R -curve behavior of Si3N4–BN composites and monolithic Si3N4 for comparison was investigated. Si3N4–BN composites showed a slowly rising R -curve behavior in contrast with a steep R -curve of monolithic Si3N4. BN platelets in the composites seem to decrease the crack bridging effects of rod-shaped Si3N4 grains for small cracks, but enhanced the toughness for long cracks as they increased the crack bridging scale. Therefore, fracture toughness of the composites was relatively low for the small cracks, but it increased significantly to ∼8 MPa·m1/2 when the crack grew longer than 700 μm, becoming even higher than that of the monolithic Si3N4.  相似文献   

3.
The mechanical behavior of MoSi2 reinforced–Si3N4 matrix composites was investigated as a function of MoSi2 phase content, MoSi2 phase size, and amount of MgO densification aid for the Si3N4 phase. Coarse-phase MoSi2-Si3N4 composites exhibited higher room-temperature fracture toughness than fine-phase composites, reaching values >8 MP·am1/2. Composite fracture toughness levels increased at elevated temperature. Fine-phase composites were stronger and more creep resistant than coarse phase composites. Room-temperature strengths >1000 MPa and impression creep rates of ∼10−8 s−1 at 1200°C were observed. Increased MgO levels generally were deleterious to MoSi2-Si3N4 mechanical properties. Internal stresses due to MoSi2 and Si3N4 thermal expansion coefficient mismatch appeared to contribute to fracture toughening in MoSi2-Si3N4 composites.  相似文献   

4.
The fracture energies of the tape-cast silicon nitride with and without 3 wt% rod-like β-Si3N4 seed addition were investigated by a chevron-notched-beam technique. The material was doped with Lu2O3–SiO2 as sintering additives for giving rigid grain boundaries and good heat resistance. The seeded and tape-cast silicon nitride has anisotropic microstructure, where the fibrous grains grown from seeds were preferentially aligned parallel to the casting direction. When a stress was applied parallel to the fibrous grain alignment direction, the strength measured at 1500°C was 738 MPa, which was almost the same as room temperature strength 739 MPa. The fracture energy of the tape-cast Si3N4 without seed addition was 109 and 454 J/m2 at room temperature and 1500°C, respectively. On the contrary, the fracture energy of the seeded and tape-cast Si3N4 was 301 and 781 J/m2 at room temperature and 1500°C, respectively, when a stress was applied parallel to the fibrous gain alignment. The large fracture energies were attributable primarily to the unidirectional alignment fibrous Si3N4 grains.  相似文献   

5.
α/β-Si3N4 composites with various α/β phase ratios were prepared by hot pressing at 1600°–1650°C with MgSiN2 as sintering additives. An excellent combination of mechanical properties (Vickers indentation hardness of 23.1 GPa, fracture strength of about 1000MPa, and toughness of 6.3 MPa·m1/2) could be obtained. Compared with conventional Si3N4-based ceramics, this new material has obvious advantages. It is as hard as typical in-situ-reinforced α-Sialon, but much stronger than the latter (700 MPa). It has comparable fracture strength and toughness, but is much harder than β-Si3N4 ceramics (16 GPa). The microstructures and mechanical properties can be tailored by choosing the additive and controlling the heating schedule.  相似文献   

6.
BN-toughened oxide matrix composites were formed by the in situ reaction of B2O3 with Si3N4 and/or AlN. A lowtemperature transient liquid phase aids densification at <1000°C, and the process tends to produce an intrinsically homogeneous microstructure. Mechanical properties and microstructure of the composites formed in situ were compared to those of composites prepared by conventional means from oxide and BN powders. Fracture toughness and flexural strength of the nearly isotropic in situ formed composites ranged from 2.82 to 3.66 MPa · m1/2 and 130 to 320 MPa, respectively, with Young's moduli of 100 to 110 GPa. Densities achieved ranged from 90% to 97% of estimated theoretical densities. The strength and toughness values are intermediate to the extreme values for the anisotropic composites formed by hot-pressing mixed powders.  相似文献   

7.
Using intermediate, liquid-forming compositions in the (Y,La)2O3-AlN system as additives, fully dense Si3N4 ceramics with high strength at high temperature have been obtained by pressureless sintering. The ceramics contain rod-shaped β-Si3N4 with M' or K' solid solutions as grain-boundary phases. The strength of these ceramics is 1150 MPa at 1200°C, and the room-temperature toughness is maintained at }7 MPa·m1/2. Phase relations that are pertinent to the new additive compositions are delineated to rationalize their beneficial effects on sinterability and mechanical properties.  相似文献   

8.
The in situ β-Si3N4/α'-SiAlON composite was studied along the Si3N4–Y2O3: 9 AlN composition line. This two phase composite was fully densified at 1780°C by hot pressing Densification curves and phase developments of the β-Si3N4/α'-SiAlON composite were found to vary with composition. Because of the cooperative formation of α'-Si AlON and β-Si3N4 during its phase development, this composite had equiaxed α'-SiAlON (∼0.2 μm) and elongated β-Si3N4 fine grains. The optimum mechanical properties of this two-phase composite were in the sample with 30–40%α', which had a flexural strength of 1100 MPa at 25°C 800 MPa at 1400°C in air, and a fracture toughness 6 Mpa·m1/2. α'-SiAlON grains were equiaxed under a sintering condition at 1780°C or lower temperatures. Morphologies of the α°-SiAlON grains were affected by the sintering conditions.  相似文献   

9.
The compressive creep behavior and oxidation resistance of an Si3N4/Y2Si2O7 material (0.85Si3N4+0.10SiO2+0.05Y2O3) were determined at 1400°C. Creep re sistance was superior to that of other Si3N4 materials and was significantly in creased by a preoxidation treatment (1600°C /120 h). An apparent parabolic rate constant of 4.2 × 10−11 kg2·m-4·s−1 indicates excellent oxidation resistance.  相似文献   

10.
Dense, single-phase β-sialon ceramics were sintered at 1700°C and 200 MPa using the glass-encapsulated hot isostatic pressing technique. The materials were very hard, 1500 to 1700 kg / mm2 (98 N load), but were fairly brittle, with an indention fracture toughness of about 3 MPa · m1/2. The addition of 1 wt% Y2O3 before sintering had a positive effect on the toughness, especially at the low x compositions of Si3-xAlxOxN4-x, where KIC∼4 MPa · m1/2.  相似文献   

11.
The high-temperature flexural strength of hot-pressed silicon nitride (Si3N4) and Si3N4-whisker-reinforced Si3N4-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si3N4. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si3N4 and its whisker composites. The origin of the nonelastic failure behavior of Si3N4-whisker composite at 1400°C was not positively identified but several possibilities are discussed.  相似文献   

12.
Delayed failure and creep behavior of high-purity Si3N4 sintered without additives with a mean grain size of 1 μm has been measured at 1400°C. Lifetime under 300 MPa was >240 h, which showed good agreement with the value predicted in our previous report. Creep strain rate ranged from 1 × 10−5 to 3 × 10−5 h−1 between 200 and 360 MPa. These values demonstrate the excellent potential of high-purity Si3N4 materials for structural application up to 1400°C.  相似文献   

13.
To enhance the sinter ability of Si3N4, powders mixed with 0, 2, and 5 wt% Y2O3 were explosively shock-treated. Compacts of these powders were encapsulated in 96% silica glass containers and isostatically hot-pressed. The shocked Si3N4 with 5 wt% Y2O3 was pressed to a density of 3.09 g/cm3 (95.4% of theoretical) at 1400°C under 430 MPa for 3 h, whereas the unshocked material attained only 82.4% of theoretical density under the same hot isostatic pressing conditions.  相似文献   

14.
A fracture mechanics approach was used to investigate the high strength of hot-pressed Si3N4. Room-temperature flexural strengths, fracture energies, and elastic moduli were determined for material fabricated from α- and β-phase Si3N4 powders. When the proper powder preparation technique was used, α-phase powder resulted in a high fracture energy (69,000 ergs/cm2), a high flexural strength (95,000 psi), and an elongated (fiberlike) grain morphology, whereas β-phase powder produced a low fracture energy (16,000 ergs/cm2), a relatively low strength (55,000 psi), and an equiaxed grain morphology. It was hypothesized that the high strength of Si3N4 hot-pressed from α-phase powder results from its high fracture energy, which is attributed to the elongated grains. High-strength Si3N4 has directional properties caused, in part, by the elongated grain structure, which is oriented preferentially with respect to the hot-pressing direction.  相似文献   

15.
TiN-coated Si3N4 particles were prepared by depositing TiO2 on the Si3N4 surfaces from Ti(O- i -C3H7)4 solution, the TiO2 being formed by controlled hydrolysis, then subsequently nitrided with NH3 gas. A homogeneous TiO2 coating was achieved by heating a Si3N4 suspension containing 1.0 vol% H2O with the precursor at 40°C. Nitridation successfully produced Si3N4 particles coated with 10–20 nm TiN particles. Spark plasma sintering of these TiN/Si3N4 particles at 1600°C yielded composite ceramics with a relative density of 96% at 25 vol% TiN and an electrical resistivity of 10−3Ω·cm in compositions of 17.5 and 25 vol% TiN/Si3N4, making these ceramics suitable for electric discharge machining.  相似文献   

16.
The effects of heat treatment in Ar-O2 and H2-H2O atmospheres on the flexural strength of hot isostatically pressed Si3N4 were investigated. Increases in room-temperature strength, to values significantly above that of the aspolished material, were observed when the Si3N4 was exposed at 1400°C to (1) H2 with water vapor pressure ( P H2O) greater than 1 × 10−4 MPa or (2) Ar with oxygen partial pressure ( P O2) of between 7 × 10−6 and 1.5 × 10−5 MPa. However, the strength of the material was degraded when the P H2O in H2 was lower than 1 × 10−4 MPa, and essentially unaffected when the P O2 in Ar was higher than 1.5 × 10−5 MPa. We suggest that the observed strength increases are the result of strength-limiting surface flaws being healed by a Y2Si2O7 layer formed during exposure.  相似文献   

17.
The results of two-step oxidation experiments on chemically-vapor-deposited Si3N4 and SiC at 1350°C show that a correlation exists between the presence of a Si2N2O interphase and the strong oxidation resistance of Si3N4. During normal oxidation, k p for SiC was 15 times higher than that for Si3N4, and the oxide scale on Si3N4 was found by SEM and TEM to contain a prominent Si2N2O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500°C and reoxidized at 1350°C as before, three things happen: the oxidation k p increases over 55-fold for Si3N4, and 3.5-fold for SiC; the Si3N4 and SiC oxidize with nearly equal k p's; and, most significant, the oxide scale on Si3N4 is found to be lacking an inner Si2N2O layer. The implications of this correlation for the competing models of Si3N4 oxidation are discussed.  相似文献   

18.
The rate of dissolution of β-Si3N4 into an Mg-Si-O-N glass was measured by working with a composition in the ternary system Si3N4-SiO2-MgO such that Si2N2O rather than β-Si3N4 was the equilibrium phase. Dissolution was driven by the chemical reaction Si3N4(c)+SiO2( l )→Si2N2O(c). Analysis of the kinetic data, in view of the morphology of the dissolving phase (Si3N4) and the precipitating phase (Si2N2O), led to the conclusion that the dissolution rate was controlled by reaction at the crystal/glass interface of the Si3N4, crystals. The process appears to have a fairly constant activation energy, equal to 621 ±40 kJ-mol−1, at T=1573 to 1723 K. This large activation energy is believed to reflect the sum of two quantities: the heat of solution of β-Si3N4 hi the glass and the activation enthalpy for jumps of the slower-moving species across the crystal/glass interface. The data reported should be useful for interpreting creep and densification experiments with MgO-fluxed Si3N4.  相似文献   

19.
Polycrystalline Si3N4 samples with different grain-size distributions and a nearly constant volume content of grain-boundary phase (6.3 vol%) were fabricated by hot-pressing at 1800°C and subsequent HIP sintering at 2400°C. The HIP treatment of hot-pressed Si3N4 resulted in the formation of a large amount of ß-Si3N4 grains ∼10 µm in diameter and ∼50 µm long, and the elimination of smaller matrix grains. The room-temperature thermal conductivities of the HIPed Si3N4 materials were 80 and 102 Wm−1K−1, respectively, in the directions parallel and perpendicular to the hot-pressing axis. These values are slightly higher than those obtained for hot-pressed samples (78 and 93 Wm−1K−1). The calculated phonon mean free path of sintered Si3N4 was ∼20 nm at room temperature, which is very small as compared to the grain size. Experimental observations and theoretical calculations showed that the thermal conductivity of Si3N4 at room temperature is independent of grain size, but is controlled by the internal defect structure of the grains such as point defects and dislocations.  相似文献   

20.
Si3N4/carbon fiber composites were fabricated using several types of fiber. All the composites had higher fracture toughness compared with monolithic Si3N4 ceramics. Tribological properties were investigated by a ball-on-disk method under unlubricated conditions. The composite containing fibers with a high orientation of graphite layers and high graphite content indicated a low friction coefficient. It was identified, by Raman spectroscopy, that graphite was transferred from the composite to the Si3N4 ball of the counterbody during the wear test. This transferred layer was effective for producing the low friction behavior of the composite.  相似文献   

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