等离子体浸没离子注入绝缘材料的研究

等离子体浸没离子注入是一种新形式的离子注入技术,是利用负偏压工件周围形成的等离子体鞘层进行离子加速、进而获得离子注入.等离子体注入的前提条件是工件导电,因此对于绝缘材料的等离子体注入可能存在问题.本文从理论和实际处理的角度论证了绝缘材料等离子体注入的可能性、可操作性,并给出了一些实际例证.     

等离子体浸没离子注入圆筒内表面的时空尺度

等离子体浸没离子注入与工件外表面的注入不同 ,存在空间和时间上的尺度。研究结果表明 ,由于内腔 ,如内筒的有限尺寸 ,使注入电压的利用率降低 ,同时使内部等离子体快速耗尽 ,对于特定的内筒 ,利用提高注入电压从而提高注入能量只能在一定的电压范围内实现。在典型的外表面注入工艺条件下 ,内表面离子的耗尽速度是惊人的。如在对于直径 2 0cm的圆筒在 30kV、2× 10 15ions/cm3的条件下 ,等离子体耗尽时间仅为 0 .5 5 μs ,这个时间甚至小于多数脉冲电源的上升沿时间。结果表明 ,内部等离子体源的硬件结构可能是一种有效的解决方法。     

Etching and structure changes in PMMA coating under argon plasma immersion ion implantation

A thin (120 nm) polymethylmethacrylate coating was treated by plasma immersion ion implantation with Ar using pulsed bias at 20 kV. Ellipsometry and FTIR spectroscopy and gel-fraction formation were used to detect the structure transformations as a function of ion fluence. The kinetics of etching, variations in refractive index and extinction coefficient in 400-1000 nm of wavelength, concentration changes in carbonyl, ether, methyl and methylene groups all as a function of ion fluence were analyzed. A critical ion fluence of 10¹⁵ ions/cm² was observed to be a border between competing depolymerization and carbonization processes. Chemical reactions responsible for reorganization of the PMMA chemical structure under ion beam treatment are proposed.     

PIIID技术制备Ti/DLC纳米多层薄膜

采用等离子体浸没离子注入与沉积（PIII＆D）技术在2Cr13钢表面制备了Ti／DLC纳米多层薄膜,分析了膜层的微观结构和机械特性。实验结果表明：纳米多层膜具有完整、清晰的调制层结构,薄膜的显微硬度均得到明显的提高,硬度较低的膜层具有较好的膜基结合强度和优良的摩擦性能,从综合性能看：纳米多层薄膜保持了类金刚石（DLC）薄膜低摩擦系数的特性,具有良好的承载能力以及膜-基结合特性。     

Temperature elevated N ion implantation of Ti6A14V alloys using the plasma source

1 INTRODUCTIONTi6Al4V alloys widely aPplied in aircraft comPorLents, cheAncal processing facilities,to medical jInplants, and so on because of its remaxkable mechaIilcal and chendcal prop-erties such as high strength-to-weight ratio and corrosj.on resistance[1]. However, the wearbehavior of titboum alloys in a tribological environInent is less satisfactoryl2l3]. Thereare reports on the effects of nitrogen ion imPlantation on hazdness, weax resistance, com-position and structure of Ti6…     

Influence of the residual oxygen in the plasma immersion ion implantation (PI3) processing of materials

In this work, we investigated the effects of the contaminants present in the vacuum chamber of the PI3 system, in particular, the residual oxygen, which results in the formation of the oxide compounds on the surface and hence is responsible for the high implantation energies required to achieve reasonably thick treated layers. We used a mass spectrometer (RGA) with a quadruple filter to verify the composition of the residual vacuum and pressure of the elements present in the chamber. Initially we found a high proportion of residual oxygen in a vacuum with a pressure of 1 × 10⁻³ Pa. Minimizing the residual oxygen percentage in about 80%, by efficient cleaning of the chamber walls and by improving the gas feeding process, we mitigated the formation of oxides during the PI3 process. Therefore we achieved a highly efficient PI3 processing obtaining implanted layers reaching about 50 nm, even in cases such as an aluminum alloy, where is very difficult to nitrogen implant at low energies. We performed nitrogen PI3 treatment of SS304 and Al7075 using pulses of only 3 kV and 15 × 10⁻⁶ s at 1 kHz with an operating pressure of 1 Pa.     

Formation of amorphous carbon on the surface of poly(ethylene terephthalate) by helium plasma based ion implantation

The surface modification of poly(ethylene terephthalate) (PET) by helium plasma based ion implantation (He PBII) was studied. The effect of the main process parameters (acceleration voltage, fluence and fluence rate) on the alterations of the surface chemical composition and structure were investigated by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.According to SRIM calculations, at ion energies above 2 keV the stopping power of PET for He⁺ ions is dominated by the electronic component and the contribution of the nuclear component is relatively small. Degradation of the ester group and carbonisation were observed by XPS due to elimination of O-rich fragments. The total C-content of the modified layer increased with the increase of fluence rate and acceleration voltage of particles, enabling the purposeful alteration of the surface composition. A strong broadening was detected in the Raman spectrum between 1000 and 1700 cm⁻¹, testifying to the intense formation of amorphous carbon. The area ratio of the D (∼1410 cm⁻¹) to G (∼1570 cm⁻¹) band increased with the increase of particle fluence and the increase of acceleration voltage, offering the possibility of tailoring the chemical structure of the amorphous carbon layer created by the He PBII treatment.     

离子注入在红外与电荷耦合器件中的应用与研究

我所于1982年建立了以LC-2A型离子注入机为核心的离子注入实验室后,我们开展了离子注入在红外器件和电荷耦合器件中的应用研究及离子注入物理的研究。离子注入技术已成为我所半导体器件研制中的必不可少的工艺技术。离子注入物理的分析研究工作也获得某些结果。     

N+离子注入对锆-4合金耐腐蚀性能的影响

为了研究N+离子注入对锆-4合金耐腐蚀性能的影响,本文使用直线加速器产生的N+离子注入锆-4合金样品,通过对离子注入后样品电化学曲线的测量,分析不同剂量下N+离子注入对锆-4合金钝化电流密度的影响,同时使用透射电子显微镜分析注入层的微观结构.结果表明,随着注入剂量的提高(0-1×1016cm-2),样品钝化电流密度下降,耐腐蚀性能提高,其原因主要归结于样品表层由多晶结构到非晶结构的转变过程.     

Estimation of the sheath power dissipation induced by ion cyclotron resonance heating

During ion cyclotron resonance heating, the sheath power dissipation caused by ion acceleration in the radio frequency(RF) sheath is one of the main causes of RF power loss in the tokamak edge region. To estimate the power dissipation of an RF sheath in the ion cyclotron range of frequency(ICRF), a 1 D fluid model for the multi-component plasma sheath driven by a sinusoidal disturbance current in the ICRF is presented. By investigation of the sheath potential and ion flux at the wall, it is shown that the larger frequency and lower amplitude of the disturbance current can cause smaller sheath power dissipation. The effect of the energetic ion on the sheath power dissipation depends on the disturbance current. For large amplitude of disturbance current, the increase in the concentration and energy of the energetic ion leads to a decrease in sheath power dissipation. While for a small disturbance current, the sheath power dissipation demonstrates non-monotonic variation with the concentration and energy of the energetic ion. In addition, the sheath power dissipation is found to have a small increase in the presence of light impurity ions with low valence.     

向日葵种胚的V离子注入研究

利用扫描电子显微镜和能量色散谱仪研究Ｖ离子注入向日葵种胚后注入元素的深度分布,用透射电子显微镜（ＴＥＭ）研究离子注入前后子叶及胚轴部位细胞的显微结构变化。结果发现Ｖ离子在种皮层的注入深度达到１８μｍ,而在胚部位（如子叶、胚轴和胚根等）则没有测到Ｖ元素,注入前后子叶前后和胚轴细胞的显微结构在ＴＥＭ上没有明显的变化。     

离子注入与离子束混合两用机

早在1979年,为了解决应用于高温高真空环境下的轴承的自润滑问题,我们就着手采用     

低能离子注入过程中真空和注入对小麦过氧化物酶同工酶的影响

本文报道了真空处理和低能离子束注入处理对小麦过氧化物酶同工酶的影响。研究发现,经真空处理后的样品,其酶活随着培养时间的延长呈增加的趋势,与对照样保持一致;而且相同取样时间不同样品之间的酶活性随真空时间的延长呈现略为增加的趋势;各剂量的N^ 注入处理后,种子的发芽率未受影响,而剂量较大时种子的芽长增长速度受到了明显的抑制;低剂量处理能刺激过氧化物酶酶活升高,而较高剂量处理则使酶活降低。     

离子注入对电器触头性能的影响

对两种电器触头注入1×10~(17)/cm~2的氮离子,然后做低压电器通断试验,测量了触头的重量损失、温升、接触电阻、触头材料转移等参数,发现离子注入方法处理对电器触头性能有不同程度的改善。     

钼离子注入对锆-4合金耐腐蚀性的影响

观察钼离子注入对锆-4合金在硫酸水溶液中耐腐蚀性的影响。使用MEVVA(Metalvaporvacuumarc)源对锆-4合金表面注入1×1016—1×1017cm-2剂量的钼离子,用X射线光电子能谱(XPS)分析其表面元素价态;用三次极化扫描评价其在1mol·L–1硫酸水溶液中的耐腐蚀性;并对三次极化后的样品进行扫描电镜(SEM)观察。实验表明,当钼离子注入剂量小于5×1016cm-2时,注入样品的耐腐蚀性显著增强。当钼离子注入剂量为1×1017cm-2时,注入样品的耐腐蚀性反而比未注入时差。讨论了钼离子注入锆-4合金后耐腐蚀性改变的原因。     

离子注入提高透明铁电陶瓷PLZT的光敏度

PLZT透明铁电陶瓷的某些组分有电光记忆特性,可利用其光铁电效应进行图象的记录和显示,但通常由于PLZT光敏区为紫外光区,且存像光能阈值大,限制了它作为存储介质的应用。本文介绍用离子注入方法提高光敏度。     

脉冲注入中靶温对金属间化合物生成的影响

研究了在钢和Ａｌ中脉冲注入Ｔｉ和Ｍｏ的条件下金属间化合物形成的规律及生长机理，给出了金属间化合物生长与靶温的关系，得出的实验结果与计算相符合。与电镜中退火原位观察结果比较发现，注入过程中金属间化合物生长温度（４００℃）比退火中金属间化合物生长温度（６００℃）低得多，说明注入过程中空位流和间隙原子流能促进金属间化合物的生长。通过脉冲注入已得到十余种金属化合物和金属间化合物，这些化合物的出现提高了注入     

镧离子注入对纯锆耐蚀性的影响

为了研究镧离子注入对纯锆耐蚀性的影响,样品表面分别注入了1×10~(16)-1×10~(17)cm-2的镧离子,使用MEVVA源作为注入源,注入能量为40 kv。X光电子谱(XPS)分析了注入样品表面镧的价态,三电极动电位扫描测定了注入样品在0.5 mol/L H2SO4溶液中的极化曲线,通过与空白样(未注入样品)比较可知,镧离子注入后,纯锆样品的耐蚀性大大提高。最后,讨论了耐蚀性提高的机理。     

全方位离子注入及增强沉积工业机和应用

报道了等离子体源离子注入 (PSII)或等离子体浸没离子注入 (PIII)及增强沉积工业机的实验结果及应用。该机真空室直径 90 0mm ,高 10 5 0mm ,立式放置 ,抽气系统由分子泵及机械泵构成并且实现了PLC控制 ,本底真空小于 4× 10 - 4Pa。等离子体由热阴极放电或三个高效磁过滤式金属等离子体源产生 ,因此可实现全方位离子注入或增强沉积成膜。该机的负高压脉冲最高幅值为 80kV ,最大脉冲电流为 6 0A ,重复频率为 5 0— 5 0 0Hz ,脉冲上升沿小于 2 μs,并且可根据需要产生脉冲串。其等离子体密度约为 10 8— 10 10 ·cm- 3,膜沉积速率为 0 .1— 0 .5nm/s。     

氮离子注入油菜M1代的生物学效应

研究了氮离子(N+)注入油菜干种子引发的当代生物学效应.结果表明N+在3.2×1016-4.6×1016/cm2注量范围内处理不影响油菜种子发芽;以3.9×1016/cm2注量处理可提高种子出苗率和成苗率;适当注量处理可促进苗期株高、叶片数和单株鲜重的增加,对成株期叶片数、茎粗、最大叶片长和宽等生物性状以及一次有效分枝数、全株总角果数和单株产量等经济性状均具有明显的生长刺激效应.同时,离子束处理区表现出广泛的变异,变异株率达到3.2%.