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等离子体浸没离子注入绝缘材料的研究 总被引:2,自引:0,他引:2
等离子体浸没离子注入是一种新形式的离子注入技术,是利用负偏压工件周围形成的等离子体鞘层进行离子加速、进而获得离子注入.等离子体注入的前提条件是工件导电,因此对于绝缘材料的等离子体注入可能存在问题.本文从理论和实际处理的角度论证了绝缘材料等离子体注入的可能性、可操作性,并给出了一些实际例证. 相似文献
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等离子体浸没离子注入与工件外表面的注入不同 ,存在空间和时间上的尺度。研究结果表明 ,由于内腔 ,如内筒的有限尺寸 ,使注入电压的利用率降低 ,同时使内部等离子体快速耗尽 ,对于特定的内筒 ,利用提高注入电压从而提高注入能量只能在一定的电压范围内实现。在典型的外表面注入工艺条件下 ,内表面离子的耗尽速度是惊人的。如在对于直径 2 0cm的圆筒在 30kV、2× 10 15ions/cm3的条件下 ,等离子体耗尽时间仅为 0 .5 5 μs ,这个时间甚至小于多数脉冲电源的上升沿时间。结果表明 ,内部等离子体源的硬件结构可能是一种有效的解决方法。 相似文献
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Alexey Kondyurin Marcela Bilek 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2011,269(12):1361-1369
A thin (120 nm) polymethylmethacrylate coating was treated by plasma immersion ion implantation with Ar using pulsed bias at 20 kV. Ellipsometry and FTIR spectroscopy and gel-fraction formation were used to detect the structure transformations as a function of ion fluence. The kinetics of etching, variations in refractive index and extinction coefficient in 400-1000 nm of wavelength, concentration changes in carbonyl, ether, methyl and methylene groups all as a function of ion fluence were analyzed. A critical ion fluence of 1015 ions/cm2 was observed to be a border between competing depolymerization and carbonization processes. Chemical reactions responsible for reorganization of the PMMA chemical structure under ion beam treatment are proposed. 相似文献
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1 INTRODUCTIONTi6Al4V alloys widely aPplied in aircraft comPorLents, cheAncal processing facilities,to medical jInplants, and so on because of its remaxkable mechaIilcal and chendcal prop-erties such as high strength-to-weight ratio and corrosj.on resistance[1]. However, the wearbehavior of titboum alloys in a tribological environInent is less satisfactoryl2l3]. Thereare reports on the effects of nitrogen ion imPlantation on hazdness, weax resistance, com-position and structure of Ti6… 相似文献
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M. Ueda A.R. Silva Jr.Carina B. Mello G. Silva H. ReutherV.S. Oliveira 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2011,269(24):3246-3250
In this work, we investigated the effects of the contaminants present in the vacuum chamber of the PI3 system, in particular, the residual oxygen, which results in the formation of the oxide compounds on the surface and hence is responsible for the high implantation energies required to achieve reasonably thick treated layers. We used a mass spectrometer (RGA) with a quadruple filter to verify the composition of the residual vacuum and pressure of the elements present in the chamber. Initially we found a high proportion of residual oxygen in a vacuum with a pressure of 1 × 10−3 Pa. Minimizing the residual oxygen percentage in about 80%, by efficient cleaning of the chamber walls and by improving the gas feeding process, we mitigated the formation of oxides during the PI3 process. Therefore we achieved a highly efficient PI3 processing obtaining implanted layers reaching about 50 nm, even in cases such as an aluminum alloy, where is very difficult to nitrogen implant at low energies. We performed nitrogen PI3 treatment of SS304 and Al7075 using pulses of only 3 kV and 15 × 10−6 s at 1 kHz with an operating pressure of 1 Pa. 相似文献
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A. Tóth M. VeresK. Kereszturi M. MohaiI. Bertóti J. Szépvölgyi 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2011,269(16):1855-1858
The surface modification of poly(ethylene terephthalate) (PET) by helium plasma based ion implantation (He PBII) was studied. The effect of the main process parameters (acceleration voltage, fluence and fluence rate) on the alterations of the surface chemical composition and structure were investigated by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.According to SRIM calculations, at ion energies above 2 keV the stopping power of PET for He+ ions is dominated by the electronic component and the contribution of the nuclear component is relatively small. Degradation of the ester group and carbonisation were observed by XPS due to elimination of O-rich fragments. The total C-content of the modified layer increased with the increase of fluence rate and acceleration voltage of particles, enabling the purposeful alteration of the surface composition. A strong broadening was detected in the Raman spectrum between 1000 and 1700 cm−1, testifying to the intense formation of amorphous carbon. The area ratio of the D (∼1410 cm−1) to G (∼1570 cm−1) band increased with the increase of particle fluence and the increase of acceleration voltage, offering the possibility of tailoring the chemical structure of the amorphous carbon layer created by the He PBII treatment. 相似文献
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我所于1982年建立了以LC-2A型离子注入机为核心的离子注入实验室后,我们开展了离子注入在红外器件和电荷耦合器件中的应用研究及离子注入物理的研究。离子注入技术已成为我所半导体器件研制中的必不可少的工艺技术。离子注入物理的分析研究工作也获得某些结果。 相似文献
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《等离子体科学和技术》2020,22(6):65103
During ion cyclotron resonance heating, the sheath power dissipation caused by ion acceleration in the radio frequency(RF) sheath is one of the main causes of RF power loss in the tokamak edge region. To estimate the power dissipation of an RF sheath in the ion cyclotron range of frequency(ICRF), a 1 D fluid model for the multi-component plasma sheath driven by a sinusoidal disturbance current in the ICRF is presented. By investigation of the sheath potential and ion flux at the wall, it is shown that the larger frequency and lower amplitude of the disturbance current can cause smaller sheath power dissipation. The effect of the energetic ion on the sheath power dissipation depends on the disturbance current. For large amplitude of disturbance current, the increase in the concentration and energy of the energetic ion leads to a decrease in sheath power dissipation. While for a small disturbance current, the sheath power dissipation demonstrates non-monotonic variation with the concentration and energy of the energetic ion. In addition, the sheath power dissipation is found to have a small increase in the presence of light impurity ions with low valence. 相似文献
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钼离子注入对锆-4合金耐腐蚀性的影响 总被引:3,自引:0,他引:3
观察钼离子注入对锆-4合金在硫酸水溶液中耐腐蚀性的影响。使用MEVVA(Metalvaporvacuumarc)源对锆-4合金表面注入1×1016—1×1017cm-2剂量的钼离子,用X射线光电子能谱(XPS)分析其表面元素价态;用三次极化扫描评价其在1mol·L–1硫酸水溶液中的耐腐蚀性;并对三次极化后的样品进行扫描电镜(SEM)观察。实验表明,当钼离子注入剂量小于5×1016cm-2时,注入样品的耐腐蚀性显著增强。当钼离子注入剂量为1×1017cm-2时,注入样品的耐腐蚀性反而比未注入时差。讨论了钼离子注入锆-4合金后耐腐蚀性改变的原因。 相似文献
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研究了在钢和Al中脉冲注入Ti和Mo的条件下金属间化合物形成的规律及生长机理,给出了金属间化合物生长与靶温的关系,得出的实验结果与计算相符合。与电镜中退火原位观察结果比较发现,注入过程中金属间化合物生长温度(400℃)比退火中金属间化合物生长温度(600℃)低得多,说明注入过程中空位流和间隙原子流能促进金属间化合物的生长。通过脉冲注入已得到十余种金属化合物和金属间化合物,这些化合物的出现提高了注入 相似文献
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报道了等离子体源离子注入 (PSII)或等离子体浸没离子注入 (PIII)及增强沉积工业机的实验结果及应用。该机真空室直径 90 0mm ,高 10 5 0mm ,立式放置 ,抽气系统由分子泵及机械泵构成并且实现了PLC控制 ,本底真空小于 4× 10 - 4Pa。等离子体由热阴极放电或三个高效磁过滤式金属等离子体源产生 ,因此可实现全方位离子注入或增强沉积成膜。该机的负高压脉冲最高幅值为 80kV ,最大脉冲电流为 6 0A ,重复频率为 5 0— 5 0 0Hz ,脉冲上升沿小于 2 μs,并且可根据需要产生脉冲串。其等离子体密度约为 10 8— 10 10 ·cm- 3,膜沉积速率为 0 .1— 0 .5nm/s。 相似文献