感应耦合等离子体源制备硬质类金刚石膜的研究

采用感应耦合等离子体源(ICPS)成功地实现化学气相沉积硬质类金刚石(DLC)膜,并考察了基片负偏压对类金刚石膜沉积过程和薄膜性质的影响。薄膜的微观形貌、显微硬度、沉积速率以及结构成分分析表明感应耦合等离子体源适于制备硬质类金刚石膜,并且在相对较低的基片负偏压条件就可以获得高硬度的类金刚石膜。基片负偏压对类金刚石膜化学气相沉积过程和薄膜性质都有显著影响。     

感应耦合等离子体源制备硬质类金刚石膜的研究

采用感应耦合等离子体源 (ICPS)成功地实现了化学气相沉积硬质类金刚石 (DLC)膜 ,并考察了基片负偏压对类金刚石膜沉积过程和薄膜性质的影响。薄膜的微观形貌、显微硬度、沉积速率以及结构成分分析表明感应耦合等离子体源适于制备硬质类金刚石膜 ,并且在相对较低的基片负偏压条件下就可以获得高硬度的类金刚石膜。基片负偏压对类金刚石膜化学气相沉积过程和薄膜性质都有显著影响。     

PⅢD技术制备Ti/DLC纳米多层薄膜

采用等离子体浸没离子注入与沉积(PⅢ&D)技术在2Cr13钢表面制备了Ti/DLC纳米多层薄膜.分析了膜层的微观结构和机械特性.实验结果表明:纳米多层膜具有完整、清晰的调制层结构,薄膜的显微硬度均得到明显的提高.硬度较低的膜层具有较好的膜基结合强度和优良的摩擦性能,从综合性能看:纳米多层薄膜保持了类金刚石(DLC)薄膜低摩擦系数的特性,具有良好的承载能力以及膜一基结合特性.     

PIIID技术制备Ti/DLC纳米多层薄膜

采用等离子体浸没离子注入与沉积（PIII＆D）技术在2Cr13钢表面制备了Ti／DLC纳米多层薄膜,分析了膜层的微观结构和机械特性。实验结果表明：纳米多层膜具有完整、清晰的调制层结构,薄膜的显微硬度均得到明显的提高,硬度较低的膜层具有较好的膜基结合强度和优良的摩擦性能,从综合性能看：纳米多层薄膜保持了类金刚石（DLC）薄膜低摩擦系数的特性,具有良好的承载能力以及膜-基结合特性。     

低能Ar离子束辅助沉积Cu、Ag、Pt薄膜

采用低能Ar离子束辅助沉积方法,在Mo/Si(100)衬底上分别沉积Cu、Ag、Pt薄膜.实验发现,若辅助轰击的Ar离子束沿衬底法线方向入射,当离子/原子到达比为0.2时,沉积的Cu膜呈(111)晶向,而Ag、Pt膜均呈(111)和(100)混合晶向.当辅助轰击的Ar离子束偏离衬底法线方向45°入射时,沉积的Cu、Ag、Pt膜均呈(111)择优取向.采用Monte Carlo方法模拟能量为500 eV的Ar离子入射单晶Ag所引起的原子级联碰撞过程,分别算得Ar离子入射单晶Ag(100)面、(111)面时,Ar离子的溅射率与入射角和方位角的关系.对离子注入的沟道效应和薄膜表面的自由能对薄膜择优取向的影响作了初步的探讨和分析.     

氩离子辐照对ZrO2—Y2O3薄膜的结构影响

为了研究离子辐照对薄膜结构的影响,对氩离子辐照磁控溅射沉积的ZrO_2-8%(m/m)Y_20_3薄膜,用XRD、AES及XPS进行微观分析。结果表明,溅射沉积的无定形薄膜经离子辐照后发生了晶化,膜内元素与基体元素发生了显著的混合,表面污染的碳向膜内迁移。此外,还研究磁控溅射沉积ZrO_2-8%(m/m)Y_2O_3薄膜氩离子辐照前后表面Zr(3d),Y(3d),O(1s)结合能的位移情况。     

DLC薄膜中子辐照效应

采用射频等离子体化学汽相沉积法得到了类金刚石（以下简称DLC）薄膜,并用能量为14MeV的中子对其进行辐照,辐照剂量为1.4×1012n/cm2～7.2×1012n/cm2。通过Raman及红外光谱分析得出,中子辐照造成膜中SP3C-C键的明显减少及SP2C=C键的增加,并形成少见的非晶型SP1C≡C键碳（直线型碳）,使DLC膜进一步非晶化。经辐照后的DLC薄膜红外透过率均有所提高,在实验剂量范围内,基本上与辐照剂量无关。     

硼缓冲注入层对氮化硼薄膜生长的影响

采用射频磁控溅射法在注硼的硅和高速钢基体上沉积制备c-BN薄膜,采用红外光谱(Infrared spectra,IR)、X射线光电子能谱(X-ray photoelectron spectrum,XPS)和原子力显微镜(Atomicforce microscopy, AFM)等分析方法对沉积的薄膜进行了表征分析.实验结果表明:硅基体上离子注硼有利于c-BN薄膜内应力的降低;合适的注硼量注入高速钢基体有利于c-BN的生成和薄膜内应力的降低.AFM分析表明,注硼处理的高速钢基体上沉积的薄膜表面形貌平整,结晶性较好.此外也采用XPS方法对硅和高速钢基体硼过渡层进行了成分与组织结构分析,探索研究了硼缓冲层对c-BN薄膜生长的影响.     

等离子体辅助化学气相沉积的新技术

等离子体辅助化学气相沉积译沉积薄膜具有许多优点。在膜生长期间使用离 能轰击膜是生产致密结构的一种重要技术。本文讨论了在高能轰击对用等离子体沉积工艺生产的膜的应力水平及结构的影响方面研究的最近进展。诊断设备，诸如原位椭圆汁，能量选择质谱仪及残余气体分析器，能对ＰＡＣＶＤ过程仔细监测，因此可精确地控制生长面的条件。新的等离子体源，比如螺旋波等离子体源，可发射出高的离子通量。     

离子束辅助沉积立方氮化硼的试验研究

本文运用离子束辅助沉积法在硅片上制备了立方氮化硼薄膜 ,主要研究了辅助能量、辅助束流及辅助束中氮气含量等参数对膜中立方氮化硼 (c -BN)含量的影响。用红外光谱 (FTIR)及光电子能谱 (XPS)分析技术对得到的c -BN膜进行了分析。结果表明 :(1)合适的离子辅助能量能够获得c -BN含量高的薄膜。(2 )膜中c -BN的含量随空中N2 含量的提高而增加。 (3)辅助束流对薄膜的形成影响不明显     

A Study on Optical Emission of CF4＋CH4 Plasma and Deposition Mechanisms of a-C ： F, H Films

Fluorinated amorphous carbon (a-C : F, H) films were deposited by inductively coupled plasma using CH4 and CF4 gases. Actinometrical optical emission spectroscopy (AOES) was used to determine the relative concentrations of various radicals, CF, CF2 CH, C2, H and F, in the plasma as a function of gas flow ratio R, R=[CH4]/([CH4] [CF4]). The structural evolution of the films were characterized by Fourier transform infrared transmission (FTIR) spectroscopy. The relationship between the film deposition and the precursor radicals in the plasma was discussed. It was shown that CH radical, as well as CF, CF2, C2 radicals are of the precursors, contributing to a-C : F, H film growth.     

Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

A high growth rate fabrication of diamond-like carbon(DLC)films at room temperature was achieved by helicon wave plasma chemical vapor deposition(HWP-CVD)using Ar/CH_4gas mixtures.The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy.The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe.The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed.The growth rate of the DLC films reaches a maximum value of 54μm h~(-1)at the CH_4flow rate of 85 sccm,which is attributed to the higher plasma density during the helicon wave plasma discharge.The CH and H_αradicals play an important role in the growth of DLC films.The results show that the H_αradicals are beneficial to the formation and stabilization of C=C bond from sp~2to sp~3.     

The properties of N-doped diamond-like carbon films prepared by helicon wave plasma chemical vapor deposition

In this paper, N-doped diamond-like carbon(DLC) films were deposited on silicon substrates by using helicon wave plasma chemical vapor deposition(HWP-CVD) with the Ar/CH_4/N_2 mixed gas. The surface morphology, structural and mechanical properties of the N-doped DLC films were investigated in detail by scanning electron microscopy(SEM), x-ray photoelectron spectroscopy(XPS), Raman spectra, and atomic force microscopy(AFM). It can be observed from SEM images that surface morphology of the films become compact and uniform due to the incorporation of N. The maximum of the deposition rate of the films is 143 nm min~(-1), which is related to the high plasma density. The results of XPS show that the N incorporates in the films and the C-C sp~3 bond content increases firstly up to the maximum(20%) at 10 sccm of N_2 flow rate, and then decreases with further increase in the N_2 flow rate. The maximum Young's modulus of the films is obtained by the doping of N and reaches 80 GPa at 10 sccm of N_2 flow rate, which is measured by AFM in the scanning probe microscope mode. Meanwhile, friction characteristic of the N-doped DLC films reaches a minimum value of 0.010.     

氢气流量对类金刚石薄膜结构与性能的影响

采用直流/射频耦合反应磁控溅射法在Si（100）衬底上成功制备出类金刚石（DLC）薄膜。利用表面轮廓仪、Raman光谱仪、X射线光电子能谱仪表征所制备薄膜在不同氢气流量下的沉积速率和化学结构,讨论了氢气流量对薄膜沉积速率和化学结构的影响;利用纳米压痕技术及曲率弯曲法表征薄膜的力学性能;利用扫描电镜和原子力显微镜表征薄膜的表面形貌与粗糙度。研究表明：随着氢气流量的增加,所制备薄膜的沉积速率逐渐减小,而薄膜中sp³键的含量逐渐增大。当氢气流量为25 mL/min时,薄膜中sp³键的含量为36.3%,薄膜的硬度和体弹性模量分别达到最大值17.5 GPa和137 GPa。同时,所制备薄膜的内应力均低于0.5 GPa,有望成功制备出低内应力的高质量DLC厚膜。随着氢气流量的增加,DLC薄膜的表面变得更致密光滑,且表面均方根粗糙度由5.40 nm降为1.46 nm。     

Carbon nitride thin films prepared by a capacitively coupled RF plasma jet

Carbon nitride thin films have been downstream deposited from a nitrogen plasma beam sustained by a capacitively coupled discharge generated between a RF powered carbon electrode and a grounded carbon nozzle. The spectral emission of the plasma jet strongly exhibits the CN radical emission indicating that the deposition takes place via a mechanism involving the CN radical. The deposition process is enhanced by DC biasing the powered electrode. The films have been investigated by X-ray diffraction, infrared absorption spectroscopy and X-ray photoelectron spectroscopy. The results show that the films are amorphous and contain in a large extent carbon nitrogen bonds.     

Magnetic field enhanced radio frequency ion source and its application for Siincorporation diamond-like carbon film preparation

Various ion sources are key components to prepare functional coatings,such as diamond-like carbon(DLC)films.In this article,we present our trying of surface modification on basis of Si-incorporation diamond-like carbon(Si-DLC)produced by a magnetic field enhanced radio frequency ion source,which is established to get high density plasma with the help of magnetic field.Under proper deposition process,a contact angle of 111°hydrophobic surface was achieved without any surface patterning,where nanostructure SiC grains appeared within the amorphous microstructure.The surface property was influenced by ion flow parameters as well as the resultant surface microstructure.The magnetic field enhanced radio frequency ion source developed in this paper was useful for protective film applications.     

Optical Characterization of Amorphous Hydrogenated Carbon(a-C:H)Thin Films Prepared by Single RF Plasma Method

Methane(CH4) plasma was used to produce amorphous hydrogenated carbon(aC:H) films by a single capacitively coupled radio frequency(RF) powered plasma system.The system consists of two parallel electrodes:the upper electrode is connected to 13.56 MHz RF power and the lower one is connected to the ground.Thin films were deposited on glass slides with different sizes and on silicon wafers.The influence of the plasma species on film characteristics was studied by changing the plasma parameters.The changes of plasma species during the deposition were investigated by optical emission spectroscopy(OES).The structural and optical properties were analyzed via Fourier transform infrared(FTIR) spectroscopy,X-ray diffraction(XRD) and UV-visible spectroscopy,and the thicknesses of the samples were measured by a profilometer.The sp~3/sp~2 ratio and the existing H atoms play a significant role in the determination of the chemical properties of thin films in the plasma.The film quality and deposition rate were both increased by raising the power and the flow rate.     

Preparation and characterization of Ag-coated cenospheres by magnetron sputtering method

In this paper, we show the feasibility of the magnetron sputtering deposition technique to grow 10-100-nm thick, uniform, continuous and well adhesive silver films on cenosphere particles so that the properties of the core particles can be suitably modified. Experiments were conducted with a magnetron sputtering deposition system in which a newly designed sample stage equipped with an ultrasonic vibration generator was used for the tumbling of cenosphere particles. The cenosphere particles are characterized by X-ray diffraction (XRD) analysis, field emission scanning electron microscope (FE-SEM) and inductively coupled plasma-atom emission spectrometer (ICP-AES) before and after the coating process. All results show the metal film has been successfully coated onto cenosphere particles. Under the given conditions, up to 3.0 wt.% silver was deposited on cenosphere particles measured by ICP-AES. The FE-SEM results indicate that at the micro-scale the relatively uniform, compact and well adhesive silver films with about 51 nm thickness were successfully deposited on cenosphere particles. The XRD analytic result indicates that the nanometer metal film has a face-centered cubic structure.     

The effect of nitrogen concentration on the properties of N-DLC prepared by helicon wave plasma chemical vapor deposition

Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by helicon wave plasma chemical vapor deposition (HWP-CVD). The mechanism of the plasma influence on the N-DLC structure and properties was revealed by the diagnosis of plasma. The effects of nitrogen doping on the mechanical and hydrophobicity properties of DLC films were studied. The change in the ratio of precursor gas flow reduces the concentration of film-forming groups, resulting in a decrease of growth rate with increasing nitrogen flow rate. The morphology and structure of N-DLC films were characterized by scanning probe microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy. The mechanical properties and wettability of N-DLC were analyzed by an ultra-micro hardness tester and JC2000DM system. The results show that the content ratio of N+ and ${{\rm{N}}}_{2}^{+}$ is positively correlated with the mechanical properties and wettability of N-DLC films. The enhancement hardness and elastic modulus of N-DLC are attributed to the increase in sp3 carbon–nitrogen bond content in the film, reaching 26.5 GPa and 160 GPa respectively. Water contact measurement shows that the increase in the nitrogen-bond structure in N-DLC gives the film excellent hydrophobic properties, and the optimal water contact angle reaches 111.2°. It is shown that HWP technology has unique advantages in the modulation of functional nanomaterials.