27.12 MHz基片偏压在调控磁控溅射离子能量中的作用研究北大核心CSCD

在基片上施加射频偏压,调控入射离子能量特性,可以有效地控制薄膜生长与性能。常用的13.56 MHz射频基片偏压具有入射离子能量呈展宽发散分布、较强的高能离子轰击作用问题。为解决这些问题,本文通过提高射频偏压频率的方法,采用拒斥场能量分析技术,研究了27.12 MHz射频基片偏压对磁控溅射基片表面离子能量分布特性和离子通量密度性能的影响。结果表明,27.12 MHz射频基片偏压可以有效降低高能离子密度,提高低能离子密度,使离子能量更集中分布,从而降低高能离子对基片的轰击作用。离子能量分布特性的变化与基片偏压频率提高导致的离子渡越鞘层时间τi延长、离子与中性基团碰撞几率增大有关。碰撞几率增大使高能离子比例降低、低能离子比例增大,离子能量分布变窄,离子能量的发散降低。因此,提高基片射频偏压频率,可以降低离子能量的发散和高能离子对基片产生的不利作用。     

27.12 MHz基片偏压在调控磁控溅射离子能量中的作用研究

在基片上施加射频偏压,调控入射离子能量特性,可以有效地控制薄膜生长与性能。常用的13.56 MHz射频基片偏压具有入射离子能量呈展宽发散分布、较强的高能离子轰击作用问题。为解决这些问题,本文通过提高射频偏压频率的方法,采用拒斥场能量分析技术,研究了27.12 MHz射频基片偏压对磁控溅射基片表面离子能量分布特性和离子通量密度性能的影响。结果表明,27.12 MHz射频基片偏压可以有效降低高能离子密度,提高低能离子密度,使离子能量更集中分布,从而降低高能离子对基片的轰击作用。离子能量分布特性的变化与基片偏压频率提高导致的离子渡越鞘层时间τ_i延长、离子与中性基团碰撞几率增大有关。碰撞几率增大使高能离子比例降低、低能离子比例增大,离子能量分布变窄,离子能量的发散降低。因此,提高基片射频偏压频率,可以降低离子能量的发散和高能离子对基片产生的不利作用。     

射频自偏压在等离子体工艺中的作用

木文讨论了射频自生负偏压的作用，认为自偏压代表了等离子体状态而且也代表了离子对各个表面的轰击能量。     

CF4/Ar等离子体刻蚀中入射角对SiO2刻蚀速率的影响

在CF4/Ar的感应耦合等离子体中,用"法拉第筒"式的方法研究了SiO2刻蚀速率与不同离子入射角度之间的关系.在所施加的-20～300V射频偏压范围内,SiO2基片的归一化刻蚀速率(NER)呈现两种情况,当偏压值＜100V时,归一化刻蚀速率的大小与基片倾斜角度θ符合余弦曲线规律;当偏压值＞100V时,θ在15°～60°范围内,归一化刻蚀速率的大小在大于相应的余弦值,θ＞60°时归一化刻蚀速率快速下降,在90°附近SiO2表面出现聚合物沉积.θ＜60°时,SiO2的表面刻蚀主要决定于入射离子与基片表面间的能量转换,转换能量的大小深刻地影响着SiO2的刻蚀速率,同时也影响形成于基片表面的碳氟聚合物的去除速率.     

激光诱导液相电极腐蚀新方法

提出了一种激光诱导液相腐蚀新方法—电极腐蚀法。电极腐蚀法是指进行激光化学液相腐蚀时,在腐蚀溶液中添加电极,以吸引反应中间离子脱离基片表面,实现腐蚀的持续稳定进行。理论分析和实验结果都表明,电极腐蚀法可以有效地加快激光腐蚀的进程;吸附在基片表面的离子在电极作用下,快速迁移出基片表面,保证了基片表面腐蚀溶液构成的稳定,进而得到更加均匀的腐蚀表面;利用电流随腐蚀速率变化而变化的特点,使腐蚀速率和深度的直接监控转变为对腐蚀电流的间接控制,简化腐蚀控制方法。基于以上优点,电极腐蚀法可以克服现有激光腐蚀方法的诸多弊端,改善激光腐蚀性能,在特殊结构光电器件的制作和半导体的微细加工中具有广阔的应用前景。     

基片下磁场中溅射镀铜薄膜及其微结构

介绍了基片下外加磁场的方法来溅射制备铜膜的实验,结果发现薄膜的表面形貌和微结构与平常磁控溅射法所得的有很大的不同。在溅射过程中等离子体的发光也明显增强。相同的输入功率下,自偏压较磁控溅射有明显下降。研究认为产生以上现象的原因是实验中采用的特殊装置产生的磁镜效应对溅射空间大量离子作用的结果。     

大面积应用的RF-PECVD技术研究

本文探讨采用小电极与大面积基片相对移动的方法来制造大面积薄膜的可行性,提出了采用小电极等离子体源在大面积基片上移动工作的新方法,可用于沉积(或刻蚀)均匀大面积薄膜或根据需求设计的大面积上非均匀膜厚分布的薄膜,从原理上避免大电极带来的不均匀性.介绍了这种方法中由两个电极构成的等离子体增强化学气相沉积(PECVD)系统.分析了当电极移动时,电极与真空室壁相对位置发生变化时对等离子体参数的影响.我们发现当两个射频电极之间的相位差为定值时,等离子体的分布随电极与真空室壁的距离(极-地距)变化而变化.当极-地距小于80mm时,随极-地距的增加,等离子体的悬浮电位和基片的自偏压下降,离子密度变化不明显.当极-地距大于80mm时,等离子体的分布呈稳定状态,各参数变化不明显.采用PECVD方法镀制了大面积薄膜厚度呈均匀分布和非均匀分布的两种薄膜,提供了膜厚呈线性渐变和抛物线变化的两种薄膜样片,显示了该方法的灵活性和可行性.     

CF4/CHF3反应刻蚀石英和BK7玻璃

用CF4/CHF3作为工作气体对石英和BK7玻璃进行了研究,分析了气体组分、气体流量和射频偏压等几种因素对刻蚀速率的影响,结果表明刻蚀速率与射频偏压的均方根成正比.在1 CF4∶1CHF3的等离子体中由于与光刻胶良好的刻蚀选择比,在石英基片上获得了侧壁陡直的槽形.用光学表面轮廓仪观测的结果表明偏压的增加和过高的气体流量易使基片表面质量下降.     

干法刻蚀中射频等离子体电特性的研究

射频功率为５０－５００Ｗ（１３．５６ＭＨＺ），气压为１．３－１３．３Ｐａ的氩和四氟化碳放电气气氛中，测量了阻抗、直流自偏压和峰－峰电压。测量结果表明，这种放电可以采用容的电阻的串、并联来描述。同时研究了离子轰击两个电极的能量比率，指出过去被广泛假设的离子轰击能量的比率与电极面积比的四次方关系并不相符。     

脉冲偏压作用下MgO薄膜表面的荷电效应

采用脉冲偏压电弧离子沉积技术在玻璃基片上制备了透明的、具有择优取向的MgO薄膜。针对绝缘性薄膜表面的荷电效应,比较了脉冲偏压作用下鞘层对离子的加速时间(即鞘层的寿命)与脉冲宽度的大小以及偏压鞘层的初始厚度与离子穿越的距离的大小,讨论了不同占空比下偏压鞘层对离子的加速效应。利用X射线衍射及扫描电子显微镜对样品的观察结果表明,由于荷电效应,脉冲偏压幅值为-150 V,占空比在10%~40%的范围内,占空比的变化并不能改变MgO薄膜的微观结构和表面形貌。     

Dielectric substrate self-bias and plasma confinement in two-dimensional scanning radio frequency plasma-enhanced chemical vapour deposition

A two-dimensional scanning radio frequency (RF) plasma method was developed for large area deposition in order to avoid difficulties encountered in conventional large RF plasma systems, offering precision control of plasma, improved uniformity of thickness and microstructure, and simplicity of system design. Guarded electrode houses were introduced to form localized plasma thus parasitic plasma or parasitic deposition outside the localized plasma region was eliminated. Different electrode configurations were studied and optimized. Self-bias on dielectric substrate was studied for different electrode configurations as a function of RF power, pressure, and gases. Eliminating parasitic plasma by fully shielding the basing electrode resulted in monitoring signal losses of self-bias. Introducing an isolated plasma house for the biasing electrode enabled the recovery of the self-bias on the biasing electrode without parasitic deposition on substrate outside the localized plasma region. Uniformity optimization within the localized plasma region is no longer a concern in this system. Thickness profile control was achieved by scanning the plasma source over the large substrate. TEM analysis showed that homogenous films were deposited in the scanning deposition system.     

Influence of test capacitor features on piezoelectric and dielectric measurement of ferroelectric films

This paper presents both theoretical and numerical analyses of the piezoelectric and dielectric responses of a highly idealized film-on-substrate system, namely, a polarized ferroelectric film perfectly bonded to an elastic silicon substrate. It shows that both effective dielectric and piezoelectric properties of the films change with the size and configuration of the test capacitor. There exists a critical electrode size that is smaller than the diameter of the commonly used substrate. The effective film properties converge to their respective constrained values as capacitor size increases to the critical size. If capacitor size is smaller than the critical size, the surface displacement at the top electrode deviates from the net thickness change in response to an applied voltage because the film is deformable at the film/substrate interface. The constrained properties of the films depend only on those of bulk ferroelectrics but are independent of film thickness and substrate properties. The finding of the critical capacitor size together with analytical expressions of the constrained properties makes it possible to realize consistent measurement of piezoelectric and dielectric properties of films. A surface scanning technique is recommended to measure the profile of piezoresponses of the film so that the constrained properties of the film can be identified accurately.     

Effect of particle bombardment on the orientation and the residual stress of sputtered AlN films for SAW devices

We present a study of the effect of particle bombardment on the preferred orientation and the residual stress of polycrystalline aluminum nitride (AlN) thin films for surface acoustic wave (SAW) applications. Films were deposited on silicon (100) substrates by radio frequency (RF) sputtering of an aluminum target in an argon and nitrogen gas mixture. The main deposition parameters were changed as follows: the total pressure from 4 mTorr to 11 mTorr, the N2 content in the gas mixture from 20% to 80%, and the substrate self-bias voltage from -10 V to -30 V. If a sufficiently high negative substrate self-bias voltage is induced, (00.2)-oriented films are obtained over the full ranges of pressure and N2 content. Such films have values of residual stress ranging from -3 GPa to +1 GPa, depending on the deposition conditions. Our results suggest that the energy of the Ar ions colliding with the substrate controls the preferred orientation of the films, whereas the directionality of the ions (for the same energy) is the main factor determining the residual stress. To demonstrate the suitability of our material for the intended application, SAW filters with good electroacoustic response have been fabricated using AlN thin films with optimized (00.2) orientation and controlled residual stress.     

Surface discharge in air at high temperatures

The electrical characteristics of surface discharge in air and the intensity of charged species formation in this discharge at high temperatures have been studied experimentally. Current pulses of microdischarges from the edges of a multistripe electrode placed on the surface of a ceramic plate (dielectric barrier) were measured for a.c. voltage with a frequency of 14 kHz and an amplitude up to 3 kV. The analysis of the experimental data shows that with an increase of the gas temperature in the discharge cell up to 500°C and additional heating of the barrier there is a change in the parameters and shape of microdischarge current pulses and a significant increase of charged species formation.     

梳状电极结构对大气压表面放电的影响

研究了梳状电极结构对大气压表面放电的影响,发现频率固定时放电电流随着外加电压的增加而增加,而电压固定时在某个频率范围内放电电流有最大值;在相同的电压和频率下较宽的电极条宽可以产生较大的放电电流,而电极条间距对放电电流几乎没有影响;用整块金属板做接地电极相比于梳状接地电极可以产生较大的放电电流;另外,较厚的高压电极可以在介质板表面产生更明亮、厚度更大的放电等离子体.     

On the nature of the Vorob’evs effect in pulse breakdown of solid dielectrics

The Vorob’evs effect consists in certain features of the discharge observed when a solid dielectric in contact with two rodlike electrodes is placed in a liquid dielectric medium and a voltage pulse with increasing front is applied to the electrodes. When the pulse front slope is small, the discharge develops in the liquid over the solid dielectric surface; whereas the discharge at a sufficiently large slope of the pulse front penetrates into the solid and produces its fracture with cleavage of the surface fragments. In order to explain this phenomenon, it is suggested that, at a sufficiently high voltage buildup rate, a displacement current that is related to the motion of the surface discharge plasma passes through a microprotrusion occurring on the electrode surface at the contact site and causes the electric explosion of this microprotrusion. The metal plasma jet generated as a result of this explosion penetrates into the solid dielectric and forms a discharge channel in depth of this material. The surface discharge plasma formed at a small slope of the voltage pulse front closes the electrode circuit, thus preventing the discharge penetration in depth of the solid.     

电应力对HfO2栅介质漏电流的影响

使用导电原子力显微镜（Conductive Atomic Force Microscopy,CAFM）对电压应力作用下HfO2栅介质薄膜局域漏电点的形成和产生机制进行了研究,结果表明,在电压应力作用下,HfO2介质层中的缺陷被驱动和聚集形成导电通道,产生漏电点。漏电点产生的数量、漏电流大小均受电压应力和作用时间的影响。HfO2栅介质层中晶界处的缺陷密度高于晶粒处,导致晶界处更容易产生漏电通道。在栅介质击穿过程中,电压应力在诱发漏电流产生的同时产生焦耳热,对HfO2介质表面造成热损伤,导致击穿后HfO2介质表面出现凹陷。     

Voltage distribution of two thin polymeric film surface resistancemeasurement systems

Two different methods for measuring the surface resistance of thin polymeric films are presented. The first method is the standard method and utilizes concentric ring metal electrodes. The second one is a novel method and uses instead concentric cylindrical metal electrodes. Both have been studied analytically and experimentally. The voltage distributions that are developed in both methods are calculated, plotted using three-dimensional graphs, and finally compared in order to analyze the advantages and disadvantages of the two measuring systems (acetate is the dielectric). The cylindrical electrodes, which give lower stresses around the outer electrode, seem to be more suitable for the measurements of the surface resistance of thin polymeric films     

Influence of electrode configuration on ozone synthesis and microdischarge property in dielectric barrier discharge reactor

Characteristics of a dielectric barrier discharge were investigated experimentally to clarify an influence of an electrode configuration on ozone synthesis and a microdischarge behavior. Three difference configurations: plane, trench and multipoint were employed as ground electrode. The alumina dielectric barrier coated plane electrode was used as a high-voltage electrode, to which a sinusoidal high-voltage was applied with 10 kHz frequency. Pure oxygen gas was fed into the reactor with gas flow rate of 5 L/min. The maximum yielding rate increased from 80 to 120 g/kWh by changing an electrode configuration from plane to multipoint, which has 528 number of a right-pyramid shape projection on a 6 cm × 22 cm plane electrode. The yielding rate was strongly dependent on a produced ozone concentration in the plane electrode case, whereas slightly depended on the concentration in the multipoint electrode case. The electrode configuration also affected a number of the microdischarges per one applied voltage cycle. The multipoint electrode showed the largest number of microdischarges at same input energy.     

Experimental study on electrostastic particle deposition from gas–solids two-phase flow based on tribo-electrification

Electrostastic particle deposition on a target embeded in a substrate under a locally applied voltage has been investigated experimentally based on the tribo-electrification of particles. Initially particles deposit mainly on the edge of the target because of the contact potential difference between substrate (poly(methyl methacrylate)) and target (brass). The thickness of particle layer formed by the deposited particles increases with time, but gradually saturates. Since then almost no additional particles deposit on the target. When high voltage is applied to the target, and orange peel phenomenon is observed on the surface of the particle layer. In the central region of the target, the particles under high particles. The larger the Coulombic force parameter K_E, the higher the effective deposition velocity is. The velocity increases dramatically for K_E 6 × 10⁻⁶ and 20 < St < 60. The larger Stokes number makes the coefficient of variation larger for the thickness of the particle layer, i. e. the deposition under higher Stokes number gives a less uniform deposition layer. However, for St < 10, particles deposit almost uniformly. For the deposition under a larger Coulombic force parameter, onset of the rebound and resuspension is suppressed, and the region with a uniform deposition layer is shifted to a higher Stockes number. It is also found that particles can successfully deposit on a non-conductive target of a dielectric substance through setting a grounded guard electrode around the target.