Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface

Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the Co/Si interface for investigation of ion beam mixing at various doses: 8 × 10¹², 5 × 10¹³ and 1 × 10¹⁴ cm⁻². Formation of different phases of cobalt silicide is identified by the grazing incidence X-ray diffraction (GIXRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation.I–V characteristics at Co/Si interface were undertaken to understand the irradiation effect on conduction mechanism at the interface.     

Effect of 80 keV Ar+ implantation on the properties of pulse laser deposited magnetite (Fe3O4) thin films

Highly oriented thin films of Fe₃O₄ were deposited on (100) LaAlO₃ substrates by pulsed laser ablation. The structural quality of the films was confirmed by X-ray diffraction (XRD). The films showed a Verwey transition near 120 K. The films were subjected to 80 keV Ar⁺ implantation at different ion doses up to a maximum of 6 × 10¹⁴ ions/cm². Ion beam induced modifications in the films were investigated using XRD and resistance vs temperature measurements. Implantation decreases the change in resistance at 120 K and this effect saturates beyond 3 × 10¹⁴ ions/cm². The Verwey transition temperature,T _V, shifts towards lower temperatures with increase in ion dose.     

Effect of praseodymium substitution on the growth and properties of Y1−x Pr x Ba2Cu3O7−δ (o <x < 0·4) single crystals

In the present paper, a modified self-flux technique has been successfully employed for the growth of pure and praseodymium substituted (partially) large single crystals of high temperature superconducting Y_1−x Pr _x Ba₂Cu₃O_7−δ (x = 0·0,0·2,0·4). Typical sizes of the platy and bulky crystals of pure YBCO(123) material are ≈ 2 × 2 × 0·1 mm³ and 4 × 1 × 1 mm³, respectively. In case of Pr-substitution, the typical sizes of platy and bulky crystals of Y_0·8Pr_0·2Ba₂Cu₃O_7−δ and Y_0·6Pr_0·4Ba₂Cu₃O_7−δ materials are ≈ 2 × 3 × 0·1 mm³ and 5 × 1 × 1 mm³ and ≈ 1 × 1·5 × 0·1 mm³ and 7 × 0·2 × 0·1 mm³, respectively. The morphology and growth habit of the as-grown single crystals and the critical transition temperature (T _c) of the oxygenated crystals were found to depend on the Pr-content. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

Towards All Electrical Spin Injection and Detection in GaAs in a Lateral Geometry

Herein we discuss our approach to realizing all electrical spin injection and detection in GaAs. We propose a lateral geometry, with two ferromagnetic electrodes crossing an n-doped GaAs channel. AlO _x tunnel barriers are to be used in order to overcome the impedance mismatch and different widths of the two electrodes ensure different coercive fields. We present a detailed theoretical analysis of the expected magnetoresistance. Differences in behavior between lateral and vertical devices, the influence of the applied bias (electric field), and opportunities offered by different measurement geometries were explored. The MBE grown wafer consisted of 100 nm Al_0.3Ga_0.7As, acting as confinement layer, 100 nm n-doped (4 × l0¹⁷ cm⁻³) GaAs, 3 nm n⁺⁺ GaAs (10²¹ cm⁻³), to suppress Schottky barrier formation, and 1.5 nm Al. The Al was oxidized naturally in order to obtain tunnel barriers. By making use of in-situ shadow masks, a 0.1 mm wide channel is defined by covering the rest of the sample by insulating SiO₂, followed by deposition of Ta bonding pads. Finally, 500 and 1000 nm wide CoFe electrodes crossing the GaAs channel are obtained by e-beam lithography and sputtering. We show that the I–V characteristics of the CoFe/AlO _x /GaAs interface are consistent with tunneling as the main injection mechanism. However, the resistance-area (5 × 10⁹ Ω μm²) of our barriers is too high compared to the GaAs conductance (50 Ω square resistance) leading to a strong suppression of magnetoresistance. Further experiments are in progress toward optimizing barrier and channel impedance matching.     

Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa₂Cu₃O_7−x thin films grownin situ on bare sapphire by pulsed laser deposition using YBa₂Cu₃O_7−x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730°C on sapphire have shown very significant improvement over the undoped YBa₂Cu₃O_7−x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1·2×10⁶ A/cm² at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.     

BF2 ion implantation in silicon through surface oxides,behaviour of the fluorine with rapid thermal annealing

BF₂ ion implantation through surface oxides has been investigated to form shallow p⁺/n junctions. BF₂ ion implantation was performed at 25 keV at a dose of 5.4 × 10¹⁴cm⁻² through surface oxides of different thicknesses into crystalline silicon. Rapid thermal annealing (1000°C/10 s) was used for dopant activation and radiation damage removal. Secondary ion mass spectroscopy (SIMS) was used to obtain the boron and fluorine distribution profiles. p⁺/n junctions as shallow as 0.12 μm were formed with reasonable sheet resistance. The study shows that, as expected, dopant loss in the surface oxide during ion implantation results in higher values of sheet resistance. Out-diffusion of fluorine during RTA resulted in a fluorine loss of 50 to 65% from the silicon. Also, fluorine was found to segregate at the oxide/silicon interface.     

Correlations between interfacial oxides and resistance changes for W contacts on heavily doped Si-Ge

The effects of variations in processing on the thickness of an interfacial oxide and the resistance between W contact films and a doped Si-Ge alloy have been investigated. Auger electron spectroscopy in conjunction with sputter profiling indicated that the native interfacial oxide film could be reduced by 50% with an HF etch immediately prior to deposition of the W film. The interfacial oxide was found to thicken by approximately one monolayer upon being heated to 400 °C for 3 h in a sputtering vacuum chamber with a 3 × 10^-2 Torr argon atmosphere. This was correlated with a doubling in the contact resistance. The manner in which interface oxide could cause this increase in contact resistance is discussed.     

Specific contact resistance and metallurgical process of the silver-based paste for making ohmic contact structure on the porous silicon/p-Si surface of the silicon solar cell

Porous silicon has been considered as a promising optoelectronic material for developing a variety of optoelectronic devices and sensors. In the present study, the electrical properties and metallurgical process of the screen-printed Ag metallization formed on the porous silicon surface of the silicon solar cell have been investigated. The contact structure consists of thick-film Ag metal contact patterned on the top of the porous silicon surface. The sintering process consists of a rapid firing step at 750–825 °C in air ambient. It results in the formation of a nearly perfect contact structure between the Ag metal and porous silicon/p-Si structure that forms the top metalization for the screen-printed silicon solar cells. The SEM picture shows that Ag metal firmly coalesces with the silicon surface with a relatively smooth interfacial morphology. This implies that high temperature fire-through step has not introduced any signs of adverse effect of junction puncture or excessive Ag indiffusion, etc. The three-point probe (TPP) method was applied to estimate the specific contact resistance, ρ _c (Ω-cm²) of the contact structure. The TPP measurement shows that contact structure has excellent ohmic properties with ρ _c = 1.2 × 10⁻⁶ Ω-cm² when the metal contact sintered at 825 °C. This value of the specific contact resistance is almost three orders of magnitude lower than the corresponding value of the ρ _c = 7.35 × 10⁻³ Ω-cm² obtained for the contact structure sintered at 750 °C. This improvement in the specific contact resistance indicates that with increase in the sintering temperature, the barrier properties of the contact structure at the interface of the Ag metal and porous silicon structure improved which in turn results a lower specific contact resistance of the contact structure.     

Thermal Conductivity and Interfacial Thermal Resistance: Measurements of Thermally Oxidized SiO2 Films on a Silicon Wafer Using a Thermo-Reflectance Technique

This article describes the development of a method to measure the normal-to-plane thermal conductivity of a very thin electrically insulating film on a substrate. In this method, a metal film, which is deposited on the thin insulating films, is Joule heated periodically, and the ac-temperature response at the center of the metal film surface is measured by a thermo-reflectance technique. The one-dimensional thermal conduction equation of the metal/film/substrate system was solved analytically, and a simple approximate equation was derived. The thermal conductivities of the thermally oxidized SiO₂ films obtained in this study agreed with those of VAMAS TWA23 within ± 4%. In this study, an attempt was made to estimate the interfacial thermal resistance between the thermally oxidized SiO₂ film and the silicon wafer. The difference between the apparent thermal resistances of the thermally oxidized SiO₂ film with the gold film deposited by two different methods was examined. It was concluded that rf-sputtering produces a significant thermal resistance ((20 ± 4.5) × 10⁻⁹ m²·K·W⁻¹) between the gold film and the thermally oxidized SiO₂ film, but evaporation provides no significant interfacial thermal resistance (less than ± 4.5 × 10⁻⁹ m²·K·W⁻¹). The apparent interfacial thermal resistances between the thermally oxidized SiO₂ film and the silicon wafer were found to scatter significantly (± 9 × 10⁻⁹ m²·K·W⁻¹) around a very small thermal resistance (less than ± 4.5 × 10⁻⁹ m²·K·W⁻¹).     

Synthesis of zirconium silicide in Zr thin film on Si and study of its surface morphology

Zirconium silicide was synthesized on Si (100)/zirconium interface by means of swiftly moving 150 MeV Au ion beam. Thin films of zirconium (~60 nm) were deposited on Si (100) substrates in ultra high vacuum conditions using the electron-beam evaporation technique. The system was exposed to different ion fluencies ranging from 3 × 10¹³ to 1 × 10¹⁴ ions/cm² at room temperature. Synthesized zirconium silicide thin film reasonably affects the resistivity of the irradiated system and for highest fluence of 1 × 10¹⁴ ions/cm² resistivity value reduces from 84.3 to 36 μΩ cm. A low resistivity silicide phase, C-49 ZrSi₂ was confirmed by X-ray analysis. Schottky barrier height was calculated from I–V measurements and the values drops down to 0.58 eV after irradiation at 1 × 10¹⁴ ions/cm². The surface and interface morphologies of zirconium silicide were examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM shows a considerable change in the surface structure and SEM shows the ZrSi₂ agglomeration and formation of Si-rich silicide islands.     

Mixage ionique sur des structures Au/InP

The reactions induced by Zn⁺ implantations near the interface of Au/InP contacts have been studied by using scanning electron microscopy, X-ray diffraction, He⁺ Rutherford backscattering, secondary ion mass spectrometry and current-voltage measurements. A 5 × 10¹⁴ Zn ions cm^-2 dose does not induce compound formation but accelerates the growth of Au₃In and Au₂P₃ patches during post-annealing treatment. After a 5 × 10¹⁵ Zn ions cm^-2 implantation, many compounds, different from those obtained by a thermal anneal, are detected. These compounds, which depend on the implantation temperature (25 or 200°C), have a layered structure. In this case no Au₂P₃ is observed. However, for the range of doses (from 10¹⁴ to 5 × 10¹⁵ Zn ions cm^-2), the temperatures of implantation (25 and 200°C) and the range of annealing temperatures (from 320 to 450°C) that were studied, no contact with a low resistivity is formed. The electrical properties are in fact limited by an InP layer damaged by the ion implantation in which the zinc atoms are trapped in an electrically inactive form.     

Ar ion induced copper germanide phase formation at room temperature

The copper germanide phase Cu₃Ge which is emerging as an alternative material for making contacts and interconnects for semiconductor industry has been produced across the interface of Cu/Ge bilayers by ion beam mixing at room temperature using 1 MeV Ar ions. The dose dependence of the thickness of the mixed region shows a diffusion controlled mixing process. The experimental mixing rate and efficiency for this phase are 5·35 nm⁴ and 10·85 nm⁵/keV respectively. At doses above 8 × 10¹⁵ Ar/cm² the formation and growth of another copper rich phase Cu₅Ge has been observed. The present theoretical models are inadequate to explain the observed experimental mixing rate.     

Structural and electrical properties of swift heavy ion beam irradiated Fe/Si interface

The present work deals with the mixing of iron and silicon by swift heavy ions in high-energy range. The thin film was deposited on a n-Si (111) substrate at 10⁻⁶ torr and at room temperature. Irradiations were undertaken at room temperature using 120 MeV Au⁺⁹ ions at the Fe/Si interface to investigate ion beam mixing at various doses: 5 × 10¹² and 5 × 10¹³ ions/cm². Formation of different phases of iron silicide has been investigated by X-ray diffraction (XRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation. I-V measurements for both pristine and irradiated samples have been carried out at room temperature, series resistance and barrier heights for both as deposited and irradiated samples were extracted. The barrier height was found to vary from 0·73–0·54 eV. The series resistance varied from 102·04–38·61 kΩ.     

Microstructure controls and their effects on the properties of Bi2Sr2Ca1Cu2Ox superconductors

This paper reports our recent progresses in the development of Bi₂Sr₂Ca₁Cu₂O _x /Ag tape conductors for the applications of magnetic field generation in liquid helium or around 20 K, using a refrigerator. We have carried out extensive work to optimize the processing parameters, investigating the relationship between the microstructure and transportJ _c. We have found that the partial melting in oxygen atmosphere is effective to have large transportJ _c with good reproducibility. The pre-annealing and intermediate rolling (PAIR) process has been successfully applied to the multilayer conductors to improve the grain alignment and transportJ _c. TheJ _c of 5×10⁵A/cm² at 4·2 K and 10 T has been achieved, which is the highest value reported so far. Two magnets fabricated by using different types of Bi-2212/Ag conductors were tested. One is a magnet designed as an insert magnet for a 18 T-class large bore Nb-Ti/Nb₃Sn superconducting magnet. The conductor of this magnet was multifilamentary tape processed by powder-in-tube method. TheI _c was 98 A in the backup field of 18 T, which generated the self field of 1·79 T. A large pancake coil was fabricated with multilayer conductor and tested under the operation of cryocooler system. The coil was stably operated up to theJ _c of the coil at the temperatures below 30 K.     

Growth and applications of superconducting and nonsuperconducting oxide epitaxial films

Growth and characterization of high-temperature-superconducting YBa₂Cu₃O₇ and several metallic-oxide thin films by pulsed laser deposition is described here. An overview of substrates employed for epitaxial growth of perovskite-related oxides is presented. Ag-doped YBa₂Cu₃O₇ films grown on bare sapphire are shown to giveT _c=90 K, critical current >10⁶ A/cm² at 77 K and surface resistance =450μΩ. Application of epitaxial metallic LaNiO₃ thin films as an electrode for ferroelectric oxide and as a normal metal layer barrier in the superconductor-normal metal-superconductor (SNS) Josephson junction is presented. Observation of giant magnetoresistance (GMR) in the metallic La_0·6Pb_0·4MnO₃ thin films up to 50% is highlighted.     

Fine-grained high-T c superconducting YBa2Cu3O7−δ powders through a modified citrate method

Synthesis and thermal decomposition characteristics of acetate-modified citrate precursor have been investigated. The intermediates of thermal decomposition exhibit enhanced reactivity. Quantitative estimation of the intermediate phases above 1125 K has been carried out and a directed reaction between Y₂Cu₂O₅ and BaCuO₂ phases is postulated for the formation of pure 1–2–3 phase. Isothermal calcination of the precursor at 1175 K for 9 h is sufficient for the complete conversion of the intermediate phases to SmBa₂Cu₃O_7−δ. The particles thus obtained are nearly spherical and monosized to give a BET surface area of 3 m²/g. The oxygenated powder showsT _c onset at 97 K for magnetic susceptibility and a narrow hysteresis for magnetization withH _c1 andJ _c values of 105Oe and 6×10⁴ A/cm² respectively at 77 K. EPR and EDAX techniques confirm the phase purity. Electron diffraction studies confirm XRD results. For oxygenated powder the excess charge (p ⁺) on square planar copper site [Cu-O] ^p * is estimated to be 0.28.     

Influence of ion-induced interfacial chemical reactivity on contact resistance

Contact resistance measurements of chromium contacts deposited by partially ionized beam deposition on transparent conducting indium tin oxide (ITO) were performed. These provide a direct experimental evidence of the influence of interfacial chemical interaction on the contact resistance. The interfacial reactivity is controlled by modifying the energy and flux of ionized chromium atoms deposited on ITO employing a specially designed partially ionized deposition system with very high ionization efficiency. The true contact resistivityρ _c is obtained by iteratively correcting the experimentally measured values for the finite sheet resistance of the ITO layer.ρ _c decreases linearly with the energy of the ionized chromium. Auger sputter profiling shows no structural modifications at the interface due to a change in the energy of the chromium atoms, confirming that the observed change in the contact resistivity is directly related to interfacial chemical bonding of the atoms with the oxygen atoms in the ITO leading to a local increase of carrier concentration and lower interfacial resistance.     

Evidence for Irradiation Triggered Nonuniform Defects Distribution in Multiharmonic Magnetic Susceptibility of Neutron Irradiated YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7−</Subscript><Subscript><Emphasis Type="Italic">δ</Emphasis></Subscript>

Multiharmonic ac-magnetic susceptibilityx ₁,x ₂,x ₃, of neutron irradiated Li-doped YBa₂Cu₃O_7−x has revealed a nonmonotonic dependence of all harmonics on the neutron fluence. The irradiation has a strongly depressive influence on the intergrain connection suggesting an increase of the effective thickness of the intergranular Josephson junction at a neutron fluence of 0.98 × 10¹⁷ cm⁻². Less damaged are the intragrain properties. A spectacular enhancement of the superconducting intragranular properties reflected in the characteristics of all harmonics was observed at highest fluence φ=9.98 × 10¹⁷ cm⁻². We assume that this effect results from the development of a space inhomogeneous distribution with alternating defectless and defect-rich regions.     

Nanoscale Janus Z-Scheme Heterojunction for Boosting Artificial Photosynthesis

Artificial photosynthesis for CO₂ reduction coupled with water oxidation currently suffers from low efficiency due to inadequate interfacial charge separation of conventional Z-scheme heterojunctions. Herein, an unprecedented nanoscale Janus Z-scheme heterojunction of CsPbBr₃/TiO_x is constructed for photocatalytic CO₂ reduction. Benefitting from the short carrier transport distance and direct contact interface, CsPbBr₃/TiO_x exhibits significantly accelerated interfacial charge transfer between CsPbBr₃ and TiO_x (8.90 × 10⁸ s⁻¹) compared with CsPbBr₃:TiO_x counterpart (4.87 × 10⁷ s−¹) prepared by traditional electrostatic self-assembling. The electron consumption rate of cobalt doped CsPbBr₃/TiO_x can reach as high as 405.2 ± 5.6 µmol g⁻¹ h⁻¹ for photocatalytic CO₂ reduction to CO coupled with H₂O oxidation to O₂ under AM1.5 sunlight (100 mW cm⁻²), over 11-fold higher than that of CsPbBr₃:TiO_x, and surpassing the reported halide-perovskite-based photocatalysts under similar conditions. This work provides a novel strategy to boost charge transfer of photocatalysts for enhancing the performance of artificial photosynthesis.     

Structural and Physical Properties of Nd Substituted Bismuth Cuprates Bi1.7 Pb0.3−x Nd x Sr2Ca3Cu4O12+y

BiPb-2234 bulk samples with nominal composition of the compound Bi_1.7Pb_0.3−x Nd _x Sr₂Ca₃Cu₄O_12+y (BSCCO) (0.025≤x≤0.10) have been prepared by the melt-quenching method. The effects of Nd substitution on the BSCCO system have been investigated by electrical resistance (R–T), scanning electron microscopy (SEM), X-ray diffraction (XRD) and magnetic hysteresis measurements. It has been the BSCCO (2212) low-T _c phase is formed for all the substitution levels, together with the BSCCO (2223) high-T _c phase. The results obtained suggest that with increasing Nd³⁺ doping for Pb²⁺ the (2223) phase existing in undoped BSCCO gradually transforms into the (2212) phase and hence all of the samples have a mixed phase formation. The R–T result of the samples show two-step resistance transition; first transition occurs at 100 K and second in an interval of 80–90 K, depending on the Nd concentration. We have found that the magnetization decreases with increasing temperature in agreement with the general characteristic of the high-T _c materials. The samples exhibit weak field dependence particularly after 2 T and changes on the magnetic hysteresis, M–H curve rather small compared to the conventional superconducting materials. The maximum critical current density, J _c, value was calculated to be 8.51×10⁵ at 4.2 K and J _c decreases with increasing temperature and the substitution level.