有机薄膜晶体管及其集成电路

首先介绍了有机薄膜晶体管的基本结构、工作原理以及近期的研究进展。其次阐述了有机集成电路的重要组成部分——有机双极型晶体管的构建、工作机制和相关的发展状况。最后就有机集成电路的构建、加工以及未来的发展前景作了相关的阐述。     

A Novel Voltage Driving Method Using 3-TFT Pixel Circuit for AMOLED

A novel voltage driving method using three thin-film transistors (TFTs) for active-matrix organic light-emitting diodes (OLEDs) is presented and verified by automatic integrated circuit modeling SPICE simulation. The proposed novel 3-TFT pixel circuit, which successfully compensates for the threshold voltage variations, uses few TFTs with simplified control signals, and the current nonuniformity of the proposed circuit is 0.19% to 1.99% throughout the entire data range. To compensate for variations in OLED current, the proposed circuit utilizes a novel driving scheme that uses a diode connection current source with a biased voltage.     

OLED抑制阈值电压漂移像素电路分析

OLED像素电路存在驱动晶体管阈值电压漂移的问题,引起显示效果的下降.在专利数据库中进行检索和分析,对韩国三星近年来提出的多种用于抑制驱动晶体管阈值电压漂移的OLED像素电路的原理进行了分析,并提出了一些设计方面的考虑因素.     

Flexible Organic LED and Organic Thin-Film Transistor

In this paper, a plastic organic thin-film transistor (OTFT) with high mobility formed on the polymeric gate dielectrics is presented. Flexible organic LEDs (OLEDs) operated by an OTFT are fabricated with a novel lamination method and the results are also presented. Fabrication method and the performances of white (consisting of R, G, and B) OLEDs with high efficiency, stability, and good color purity are discussed.     

石墨烯电极有机薄膜晶体管研究

利用化学气相沉积法生长的高性能的层状石墨烯,通过转移和图案化后用作电极,制备了底接触的并五苯有机薄膜晶体管(OTFTs)。原子力显微镜观察发现,石墨烯电极的厚度比一般的金电极薄的多,所以石墨烯电极厚度对并五苯晶粒的生长影响不大。电学性能研究得到器件的输出和转移曲线、开关电流比、阈值电压、场效应迁移率。转移曲线的关态电流约为10-9 A,电流的开关比超过103。基于底接触的并五苯OTFTs的最大场效应迁移率约2×10-2 cm2.V-1.s-1。     

一种新的有源硅基OLED象素驱动电路

提出了一种新的有源硅基有机发光二极管(OLED-on-Silicon)象素驱动电路.该电路解决了具有特定象素大小的OLED的极小象素电流(小于1μA)与传统MOS器件大的饱和驱动电流之间的不匹配问题.利用Synopsys公司的仿真软件H-spice,对该电路和传统的两管象素驱动电路进行了模拟,结果表明该电路作为OLED-on-Silicon的象素驱动更容易实现多级灰度.     

Pentacene-Based Planar- and Vertical-Type Organic Thin-Film Transistor

Pentacene-based planar- and vertical-type organic thin-film transistors (OTFTs) are investigated in this paper. High operation voltages are observed for the planar-type OTFTs with top source/drain electrodes, which results from the limitations of channel length and low material mobility. With a reduced channel length, a LiF hole-injection enhancement layer, and a thin metal gate, the vertical-type pentacene OTFTs exhibit a low-voltage operation of less than 5 V and a compatible on/off ratio of larger than 10². The smaller current gain observed from the device under current modulation is attributed to the increase of base recombination current under the common-emitter mode.     

改进的OLED像素驱动电路

有机电致发光显示器件(OLED)被认为是LCD最强有力的竞争者.因OLED显示屏的像素驱动电路至少由两个TFT管和一个电容组成,在实际制作驱动电路中,电容面积较大,影响显示屏开口率.基于对像素驱动电路的深入研究,提出一种改进的像素驱动电路,改进后的电路面积较小.通过仿真验证和理论推导计算证明该驱动电路不仅性能稳定而且可以明显地提高显示屏的开口率.     

有机薄膜晶体管阵列面向电子纸像素设计

讨论了有机薄膜晶体管(Organic Thin Film Transistor,OTFT)作为开关器件来驱动电子纸的像素设计,特别是像素电路结构、HSPICE模拟用模型参数和像素平面结构。讨论了有机薄膜晶体管制造过程,并用HSPIC模拟分析了有机薄膜晶体管结构和存贮电容大小对像素波形的影响,结果表明TFT结构的选择依赖于存贮电容的大小。     

A Large Bandgap Organic Salt Dopant for Sn-Based Perovskite Thin-Film Transistor

Metal halide perovskite optoelectronic devices have made significant progress over the past few years, but precise control of charge carrier density through doping is essential for optimizing these devices. In this study, the potential of using an organic salt, N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate, as a dopant for Sn-based perovskite devices, is explored. Under optimized conditions, the thin film transistors based on the doped 2D/3D perovskite PEAFASnI₃ demonstrate remarkable improvement in hole mobility, reaching 7.45 cm²V⁻¹s⁻¹ with a low subthreshold swing and the smallest sweep hysteresis (ΔV_hysteresis = 2.27 V) and exceptional bias stability with the lowest contact resistance (2.2 kΩ cm). The bulky chemical structure of the dopant prevents it from penetrating the perovskite lattice and also surface passivation against Sn oxidation due to its hydrophobic nature surface. This improvement is attributed to the bifunctional effect of the dopant, which simultaneously passivates defects and improves crystal orientation. These findings provide new insights into potential molecular dopants that can be used in metal halide perovskite devices.     

真空微电子平板摄像管10×10像素驱动电路的设计与制作

真空微电子平板摄像是一种全新的摄像理论,它采用碳纳米场发射阴极、栅极和阳极(收集极)三极管结构。介绍了真空微电子平板摄像管驱动电路的设计要求、设计思路和电路测试结果,实验中采用的栅极驱动对驱动电路(扫描电路)起到了关键作用。     

A New Thin-Film Transistor Pixel Structure Suppressing the Leakage Current Effects on AMOLED

We propose a new pixel structure employing solid-phase crystallized silicon thin-film transistors which suppresses the leakage current effects on active-matrix organic light-emitting diode (AMOLED) displays. The pixel structure has been fabricated on a glass substrate employing the field-enhanced rapid thermal annealing technology. In the proposed pixel, the charge holding capability is considerably enhanced due to the capacitor located between two series-connected switch transistors. Our experimental results shows that the average variation range of the OLED current is suppressed less than 0.5% while the conventional one exceeded 4%.      

Structural Analysis on Organic Thin-Film Transistor With Device Simulation

A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure.     

SiC BJT的单电源基极驱动电路研究

摘要：对SiC BJT基极驱动电路损耗的构成进行了分析、对比,提出单基极电阻和阻容网络两种单电源基极驱动方案,对开关速度进行了对比。针对单电源阻容网络驱动方案,对其关键电路参数进行了分析,并针对一款SiC BJT器件给出了优化的参数组合设计结果,并给出实验测试结果,从而为进一步优化设计提供了基础。     

一种新型的电压型AMOLED像素补偿电路

针对常用3T1C结构的AMOLED像素补偿电路容易受到阈值电压漂移影响的问题,介绍了一种新型电压型4T2C结构的AMOLED像素补偿电路,阐明了该电路的工作原理,并对OLED的驱动电流作了定性分析。结果显示该驱动电流值只与驱动电压及电源电压有关,从而有效地解决了因阈值电压变化而造成的显示器亮度不均匀的问题。该电路已通过Spectre仿真软件验证了其有效性。     

Low Voltage Active Pixel Sensor Based on PMOS Restoration Transistor

Presented was an optimum designed CMOS active pixel sensor. In this sensor, used is a PMOSFET substituting for the NMOSFET in traditional sensor as restoration transistor. Compared with traditional active pixel sensor under the same condition based on 0.25 μm CMOS technology, simulating results show that the new structure device has higher signal-to-noise ratio, wider output swing, wider dynamic range and faster readout speed.     

阶梯电压驱动场致发光器件的电路设计

阐述了阶梯状电压驱动方式的具体原理及其硬件实现电路,同传统的方波电压驱动原理相比较,使用阶梯状电压驱动方式可以使场致发光显示器件的耗能降低到传统方式的75%,最后介绍了阶梯状电压驱动方式的硬件电路设计。     

A Testing Method on Poly-Si Thin-Film Transistor Array for Active-Matrix Organic Emitting Display

A novel method is introduced using to evaluate the quality of thin-film transistor (TFT) array for driving active-matrix display (OLED). By the means of this method, the operation states of the TFT or the defects of TFT can be judged. It is a current testing method with the advantages of fast response, excellent precision, no effect to aperture and no damage to the display array.     

一种新的有源OLED交流驱动电路

在电流编程像素电路的基础上提出了一种新的交流驱动电路结构.该电路结构不仅能实现OLED的交流驱动,而且能避免由于制作过程的变化和长时间的工作引起的驱动管阈值电压漂移的现象,这种现象将导致OLED显示屏的亮度不一致.另外这种驱动方式还能消除在反偏脉冲起始和结束时刻的尖峰电流.最后,用AIM-SPICE软件对电路进行了仿真,仿真结果表明OLED器件在恢复时间内处于反偏状态.     

一种新的有源OLED交流驱动电路

在电流编程像素电路的基础上提出了一种新的交流驱动电路结构.该电路结构不仅能实现OLED的交流驱动,而且能避免由于制作过程的变化和长时间的工作引起的驱动管阈值电压漂移的现象,这种现象将导致OLED显示屏的亮度不一致.另外这种驱动方式还能消除在反偏脉冲起始和结束时刻的尖峰电流.最后,用AIM-SPICE软件对电路进行了仿真,仿真结果表明OLED器件在恢复时间内处于反偏状态.