Molten-Salt Synthesis of Ba1–xPbxTiO3 in the System BaTiO3–PbCl2

Ba_{1– x} Pb _x TiO₃ powder with a fixed composition was prepared by the reaction of BaTiO₃ powders with molten PbCl₂at various PbCl₂/BaTiO₃ molar ratios at 600° and 800°C in a nitrogen atmosphere. When 0.1 μm powder was used, the reaction was finished when x = 0.9. Two phases of BaTiO₃and a solid solution of Ba_{1– x} Pb _x TiO₃ coexisted, but the final phase gave a solid solution of Ba_{1– x} Pb _x TiO₃ at 800°C. When 0.5 μm powder was used, the two phases coexisted in the products at 600°C at PbCl₂/BaTiO₃= 1.0. A sintered compact of Ba_{1– x} Pb _x TiO₃ powders solid solution was prepared by hot isostatic pressing, and its dielectric constant was measured in the temperature range 20°–550°C.     

Electromechanical Properties of Pb(Yb1/2Nb1/2)O3-PbZrO3-PbTiO3 Ceramics

The electromechanical and electric-field-induced strain properties of x Pb(Yb_1/2Nb_1/2)O₃· y PbZrO₃·(1− x − y )PbTiO₃ ( x = 0.12, 0.25, 0.37; y = 0.10–0.40) ceramics have been studied systematically as a function of Pb(Yb_1/2Nb_1/2)O₃ (PYN) content and PbZrO₃/PbTiO₃ (PZ/PT) ratio. In addition, the effect of MnO₂ on the electromechanical properties of 0.12Pb(Yb_1/2Nb_1/2)O₃·0.40PbZrO₃·0.48PbTiO₃ was also investigated. The maximum transverse strain values of 1.6 × 10⁻³ for x = 0.12, 1.45 × 10⁻³ for x = 0.25, and 1.36 × 10⁻³ for x = 0.37 were obtained at the compositions which were regarded as the morphotropic phase boundary (MPB). The transverse strain was maximized at the MPB composition. The value of the maximum electromechanical coupling coefficient was 0.69 for y = 0.40 and x = 0.12 composition. In the 0.12Pb(Yb_1/2Nb_1/2)O₃·0.40PbZrO₃·0.48PbTiO₃ composition, the temperature of the maximum dielectric constant decreased and the grain size increased with an addition of MnO₂. The electromechanical coupling coefficient decreased while the mechanical quality factor rapidly increased with an addition of MnO₂. These resulted mainly from the acceptor effect of manganese ions that were produced by doping MnO₂ into the perovskite structure.     

Preparation of PbZrO3–PbTiO3 Ferroelectric Thin Films by the Sol–Gel Process

Ferroelectric films, PbZr _x Ti_{1− x} O₃ ( x = 0 to 0.6), have been prepared from corresponding metal alkoxides partially stabilized with acetylacetone through the sol-gel process. The films dip-coated in an ambient atmosphere were heat-treated at 400°C for decomposition of residual organics and then at temperatures between 500° and 700°C for crystallization of the films. The perovskite phase precipitated at temperatures above 560°C, accompanied by an increase in dielectric constant. The dielectric constant of the films, which was comparable with that of sintered bodies, showed a maximum (∼620) at around x = 0.52 in PbZr _x Ti_{1− x} O₃. These films showed D – E hysteresis, with slightly higher values of coercive field, compared with those of sintered bodies.     

Electrophoretic Deposition and Characterization of Micrometer-Scale BaTiO3 Based X7R Dielectric Thick Films

Uniform and relatively dense BaTiO₃ thick films of 1–5 μm were prepared by an electrophoretic deposition process using submicrometer BaTiO₃ powders (mean particle size: ∼0.2 μm). Two different BaTiO₃ powders and solvent media were used to investigate the film quality and thickness control. The surface charge mechanism of BaTiO₃ particles was explained according to the observed results. The microstructures were examined by means of SEM. The experimental results show that the thickness could be controlled independently of suspension concentration by keeping a constant applied voltage and a constant current drop in a given suspension. BaTiO₃ thick films have good insulation resistance and dielectric properties such as a dielectric constant and a dissipation factor that are compatible with the data from conventional tape-cast BaTiO₃ thin layers.     

Weakly Coupled Relaxor Behavior of BaTiO3–BiScO3 Ceramics

The structural and dielectric properties of (1− x )BaTiO₃– x BiScO₃ ( x =0–0.5) ceramics were investigated to acquire a better understanding of the binary system, including determination of the symmetry of the phases, the associated dielectric properties, and the differences in the roles of Bi₂O₃ and BiScO₃ substitutions in a BaTiO₃ solid solution. The solubility limit for BiScO₃ into the BaTiO₃ perovskite structure was determined to be about x =0.4. A systematic structural change from the ferroelectric tetragonal phase to a pseudo-cubic one was observed at about x =0.05–0.075 at room temperature. Dielectric measurements revealed a gradual change from proper ferroelectric behavior in pure BaTiO₃ to highly diffusive and dispersive relaxor-like characteristics from 10 to 40 mol% BiScO₃. Several of the compositions showed high relative permittivities with low-temperature coefficients of capacitance over a wide range of temperature. Quantification of the relaxation behavior was obtained through the Vogel–Fulcher model, which yielded an activation energy of 0.2–0.3 eV. The attempt characteristic frequency was 10¹³ Hz and the freezing temperature, T _f, ranged from −177° to −93°C as a function of composition. The high coercive fields, low remanent polarization, and high activation energies suggest that in the BiScO₃–BaTiO₃ solid solutions, the polarization in nanopolar regions is weakly coupled from region to region, limiting the ability to obtain long-range dipole ordering in these relaxors under field-cooled conditions.     

Crossover of Ba(Ti,Y)O3 Solid Solutions to Ba3Ti2YO8.5–BaTiO3 Composites and their Dielectric Properties

Ceramic samples with the nominal composition (1− x ) BaTiO₃+ x Ba₃Ti₂YO_8.5 ( x =0−0.535) were prepared by the mixed oxide method. X-ray diffraction (XRD) analysis shows that the materials are of single phase with a cubic symmetry as x ≤0.16. The compositions of the solid solutions ( x ≤0.16) can be expressed equivalently as Ba(Ti_{1− y} Y _y )O_3−δ ( y ≤0.122, y = x /(1+2 x )). For x >0.16, the materials are diphasic composites consisting of Ba(Ti_{1− y} Y _y )O₃ ( y =0.122) and Ba₃Ti₂YO_8.5. The microstructure observation by scanning electron microscopy supports the XRD result. The dielectric behavior and phase transitions of the solid solutions ( x ≤0.16) vary with different Y concentrations. The dielectric constant of the composites ( x >0.16) follows approximately the Lichteneker relation in a wide temperature range.     

Structure–Property Relationships of BaTi1−2yGayNbyO3 (0≤y≤0.35) Ceramics

BaTi_{1−2 y} Ga _y Nb _y O₃ (BTGN) (0≤ y ≤0.35) powders were synthesized at 1300°C by the conventional solid-state method. Room temperature x-ray diffraction patterns for y ≤0.025 and 0.05≤ y ≤0.30 can be indexed as the tetragonal ( P 4 mm ) and cubic ( Pm     m ) polymorphs of BaTiO₃, respectively, whereas y =0.35 consists of a mixture of the cubic polymorph of BaTiO₃ and an 8H hexagonal-type perovskite ( P 6₃/ mcm ) isostructural with Ba₈Ti₃Nb₄O₂₄. Scanning electron microscopy shows the microstructures of BTGN ceramics ( y ≤0.30) sintered at 1500°C to consist of fine grains (1–3 μm) within a narrow grain size and shape distribution. Room temperature transmission electron microscopy for y ≤0.08 reveals core–shell structures and (111) twins in some grains; however, their relative volume decreases with y . Energy dispersive spectroscopy reveals the cores to be Ga and Nb deficient with respect to y . For y >0.08 there is no evidence of core–shell structures, however, some grains have a high density of dislocations, consistent with chemical inhomogeneity. BTGN ceramics exhibit a diverse range of dielectric behavior in the temperature range 120–450 K and can be subdivided into two groups. 0.025≤ y ≤0.15 display modest ferroelectric relaxor-type behavior, with high room temperature permittivity, ɛ₂₅', (>300 at 10 kHz), whereas 0.25≤ y ≤0.30 are temperature and frequency stable dielectrics with ɛ₂₅'<100 that resonate at microwave frequencies with modest quality factors, Q × f , ∼3720 GHz (at ∼5 GHz) for y =0.30.     

Structure-Property Phase Diagram of BaZrxTi1−xO3 System

In the course of searching environmental friendly lead-free relaxor ferroelectrics a complete phase diagram of barium zirconate titanate, Ba(Zr _x Ti_{1− x} )O₃ system with compositions 0.00≤ x ≤1.00 has been developed based on their dielectric behavior. It has been shown that BaZr _x Ti_{1− x} O₃ system depending on the composition, successively depicts the properties extending from simple dielectric (pure BaZrO₃) to polar cluster dielectric, relaxor ferroelectric, second order like diffuse phase transition, ferroelectric with pinched phase transitions and then to a proper ferroelectric (pure BaTiO₃). A comprehensive structure–property correlation of BaZr _x Ti_{1− x} O₃ ceramics has been studied to understand the various ferroelectric phenomena in the whole phase diagram.     

Polymorphism of BaTiO3 Acceptor Doped with Mn3+, Fe3+, and Ti3+

The effect of Mn doping on the cubic to hexagonal phase transition temperature in BaTiO₃ has been determined by quenching samples with different Mn contents from a range of temperatures. Under conditions of equilibrating samples in air over the range 1000°–1400°C, cubic solid solutions BaTi_{1− x} Mn _x O_3−δ form over the range 0≤ x ≤0.015(5), whereas hexagonal solid solutions form for x ≥0.02, depending on the temperature. The results are compared with those on doping BaTiO₃ with Fe³⁺ and observations made concerning acceptor doping with Ti³⁺.     

Ferroelectric and Ferromagnetic Properties of Hot-Pressed Bi0.95−xLa0.05TbxFeO3 Ceramics

Multiferroic Bi_{0.95− x} La_0.05Tb _x FeO₃ (BLTFO) ceramics were prepared by hot-pressing. It was found that their dielectric properties were very sensitive to sintering temperature. The samples hot-pressed at 740°C show stable dielectric constant and rather low loss (∼1%) in the frequency range up to 1 MHz. When the nominal content of Tb is <0.08, the atomic arrangement keeps the R 3 c symmetry, while a phase transition appears at x ≈0.08–0.10. The introduction of Tb enhances the coercive field of the BLTFO ceramics and then restrains the ferroelectricity gradually. The doping of Tb at x ≤0.10 increases the ferromagnetization.     

Improved Energy Storage Performance and Fatigue Endurance of Sr-Doped PbZrO3 Antiferroelectric Thin Films

Sr-doped PbZrO₃ antiferroelectric (AFE) thin films have been fabricated on the platinum-buffered silicon substrates via the sol–gel technique. The temperature-dependent dielectric properties results indicated that the AFE phase was stabilized for the Sr-modified PbZrO₃ thin films with a Curie temperature of 251°C. The recoverable energy density and energy efficiency of the Sr-doped PbZrO₃ thin films were enhanced by the doping of strontium. Compared with the pure PbZrO₃ AFE thin films, the performance against fatigue of the Sr-doped PbZrO₃ thin films were also improved greatly.     

Structure and Dielectric Properties of Pb(Sc2/3W1/3)O3–Pb(Zr/Ti)O3 Relaxors

The structure and dielectric properties of (1− x )Pb(Sc_2/3W_1/3)O₃–( x )Pb(Zr/Ti)O₃ ceramics have been investigated over a full substitution range. All compositions with x < 0.5 adopt a cubic perovskite structure; however, for x ≤ 0.25 a doubled cell results from a 1:1 ordered distribution of the B-site cations. The structural order in Pb(Sc_2/3W_1/3)O₃ (PSW) can be described by a random-site model with one cation site occupied by Sc³⁺ and the other by a random distribution of (Sc_1/3³⁺W_2/3⁶⁺). The ordering is destabilized in solid solutions of PSW with PbZrO₃ (PSW–PZ), but stabilized by PbTiO₃ in the (1− x )PSW–( x )PT system. The changes in order are accompanied by alterations in the dielectric response of the two systems. For PSW–PZ the temperature of the permittivity maximum ( T _ɛ,max) increases linearly with x ; however, for PSW–PT T _ɛ,max decreases in the ordered region (up to x = 0.25) and then increases rapidly as the order is lost. Similar effects were produced by modifying the degree of order of (0.75)PSW–(0.25)PT; when the order parameter was reduced from ∼1.0 to ∼0.65, T _ɛ,max increased by more than 60°C.     

Dielectric Properties of Pb0.97La0.02(Zr0.87−xSnxTi0.13)O3 Thin Films with Compositions near the Morphotropic Phase Boundary

Pb_0.97La_0.02(Zr_{0.87− x} Sn _x Ti_0.13)O₃ (PLZST, x =0.27, 0.17, 0.07)) thin films with the compositions in ferroelectric rhombohedral (FE_R) region, near the morphotropic phase boundary (MPB), were deposited on the Pt-electroded silicon (PtSi) substrates by the sol–gel process. The phase structure and surface morphology of PLZST thin films were analyzed by XRD and SEM, respectively. The dc electric field and temperature-dependent dielectric properties of the PLZST thin films were investigated in detail. The results indicated that the dielectric constant, remnant polarization, and the Curie temperature ( T _c) of PLZST films were elevated with the decrease of Sn content. Hence, the larger dielectric tunability (τ) was obtained for PLZST thin films with x =0.07, and the maximum τ value was 78.1%.     

Polymorphism and Dielectric Properties of Nb-Doped BaTiO3

A working subsolidus phase diagram for the system BaTiO₃–Ba₅Nb₄O₁₅ has been determined by firing sol–gel-synthesized samples over a range of temperatures. The main difference from previous diagrams is the greater extent of the Nb-doped BaTiO₃ cubic solid solutions, BaTi_{1−5 x} Nb_{4 x} O₃, at lower temperatures with x extending to 0.09 at 900°C, but only 0.05 at 1400°C. Electrical property measurements show that compositions with large x ( x ≥0.0025) are highly insulating for pellets sintered at 1300°C in air, followed by a slow cool. Compositions with low x , however, exhibit a residual semiconducting grain core and are not fully reoxidized readily. Composition dependence of the dielectric properties shows a continuous and smooth transition from classic ferroelectric behavior with pure BaTiO₃ to normal dielectric response with a temperature-independent relative permittivity of approximately 22–24 for x >∼0.08. At intermediate compositions, ranges of both relaxor ferroelectric and quasi-ferroelectric behavior are observed. Possible reasons for an observed anomalous increase in value of the permittivity at the ferroelectric transition temperature at low x , which is superposed on an overall decrease in permittivity with increasing x , are discussed.     

Structure–Property Relations in xBaTiO3–(1−x)La(Mg1/2Ti1/2)O3 Solid Solutions

The microwave dielectric properties and microstructures of compounds in the solid solution series x BaTiO₃–(1− x )La(Mg_1/2Ti_1/2)O₃ (BTLMT) have been investigated. The structural phase transitions that occur as a function of x have been studied and are related to changes in the dielectric properties. For compounds where x ≤ 0.1, X-ray diffraction (XRD) showed evidence of 1:1 ordering between Mg and Ti cations. For x ≤ 0.3, XRD and electron diffraction revealed that compounds were tilted in both antiphase and in-phase. However, for 0.3 < x < 0.7, only antiphase tilting was present. The temperature coefficient of resonant frequency (τ_f) vs the relative permittivity (ɛ_r) was linear until x = 0.5 at which point in the solid solution the transition to a nontilted structure resulted in nonlinear behavior. τ_f values close to zero (−2 ppm/°C) were achieved at x = 0.5 (ɛ_r∼ 60), which had a quality factor ( Q · f _o) of 9600 GHz.     

Effects of Sm3+ Substitution on Dielectric Properties of Ca1−xSm2x/3TiO3 Ceramics at Microwave Frequencies

Microwave dielectric properties of Ca_{1- x} Sm_{2 x /3}TiO₃ ceramics were investigated as a function of the amount of Sm³⁺ substitution (0.0 ≤ x ≤ 0.8). The structure was changed from orthorhombic perovskite at x = 0.0 to tetragonal at x = 0.6. As the calcium vacancy concentration increased with increased Sm³⁺ substitution, the unloaded Q value (similar/congruent 1/tan delta) increased up to the solid-solution limit at x = 0.6 and then decreased because of formation of the secondary phase Sm₂Ti₂O₇. The dielectric constant decreased with increased Sm³⁺ substitution. The effects of Sm³⁺ substitution on dielectric loss and dielectric constant of the specimens were analyzed by the infrared reflectivity spectra in the range 50–4000 cm⁻¹, which were evaluated using the Kramers-Kronig analysis and classical oscillator model. The correlations among dielectric constant, dielectric loss, and dispersion parameters were studied.     

Ferroelectric and Piezoelectric Properties of Na1−xBaxNb1−xTixO3 Ceramics

Piezoelectric ceramics Na_{1− x} Ba _x Nb_{1− x} Ti _x O₃ with low BaTiO₃ concentrations x have been prepared by the solid-state reaction method, and their ferroelectric and piezoelectric properties have been studied. The ceramics are classic ferroelectrics when x ≤0.10, and the ferroelectric–paraelectric phase transition becomes diffusive when x ≥0.15. A low doping level of BaTiO₃ changes the NaNbO₃ ceramics from antiferroelectric to ferroelectric. With the increase in BaTiO₃ doping level, the Curie temperature of ceramics decreases linearly and the remnant polarization and coercive field also decrease, while their dielectric constant increases. Na_0.9Ba_0.1Nb_0.9Ti_0.1O₃ ceramics show the largest piezoelectric constant d ₃₃ (147 pC/N) and good sinterability, suggesting that it is a good candidate for lead-free piezoelectric ceramics.     

Structure and Microwave Dielectric Properties of (Zn1−xCox)TiO3 Ceramics

Dielectric ceramics in the system (Zn_{1− x} Co _x )TiO₃ ( x = 0–1) were synthesized by the solid-state reaction route. The phase distribution, microstructure, and dielectric properties were characterized by using powder X-ray diffraction analysis, electron microscopy, and microwave measurement techniques. Three phase composition regions were identified in the specimens sintered at 1150°C; [spinel + rutile] at 0 ≤ x ≤ 0.5, [spinel + ilmenite + rutile] at 0.5 < x ≤ 0.7, and [ilmenite] phase at 0.7 < x ≤ 1. For the 0 ≤ x ≤ 0.5 region, the amount of Ti-rich precipitates incorporated into the spinel phase decreased with the Co content at 0 ≤ x ≤ 0.5, with a concomitant increase of the rutile phase. The ilmenite phase appeared for high Co content. The microwave dielectric properties depended on the phase composition and volume according to the three phase regions, where the relative amount of rutile to the spinel or ilmenite determined the dielectric properties. The dielectric constant as a function of Co addition was modeled with a Maxwell mixing rule. An optimum phase distribution was determined in this system with dielectric constant of 25, a Q * f 70 000 GHz, and a low temperature coefficient of the resonant frequency.     

PbTiO3–PbO–SiO2 Glass-Ceramic Thin Film by a Sol–Gel Process

PbTiO₃(PT)-PbO-SiO₂ glass-ceramic thin films were pro-duced by a sol-gel process. The crystallization of PT oc-curred at ∼700°C and was higher than that in PT-PbO-B₂ O₃ sol-gel glass-ceramics. A pinhole-free thin film was obtained by a rapid thermal annealing process when the designed glass-forming phase content in the thin film was >24 vol%. The measured dielectric constants of the films fairly agreed with the predicted values, based on a parallel mixing model. The dielectric constant was 219 and the di-electric loss was 0.04 in the 0.6PT-0.4(PbO-SiO₂) film that was fired at 700°C.     

Control of Microstructure and Orientation in Solution-Deposited BaTiO3 and SrTiO3 Thin Films

Columnar and highly oriented (100) BaTiO₃ and SrTiO₃ thin films were prepared by a chelate-type chemical solution deposition (CSD) process by manipulation of film deposition conditions and seeded growth techniques. Randomly oriented columnar films were prepared on platinum-coated Si substrates by a multilayering process in which nucleation of the perovskite phase was restricted to the substrate or underlying layers by control of layer thickness. The columnar films displayed improvements in dielectric constant and dielectric loss compared to the fine-grain equiaxed films that typically result from CSD methods. Highly oriented BaTiO₃ and SrTiO₃ thin films were fabricated on LaAlO₃ by a seeded growth process that appeared to follow a standard "two-step" growth mechanism that has been previously reported. The film transformation process involved the bulk nucleation of BaTiO₃ throughout the film, followed by the consumption of this matrix by an epitaxial overgrowth process originating at the seed layer. Both BaTiO₃ and PbTiO₃ seed layers were effective in promoting the growth of highly oriented (100) BaTiO₃ films. Based on the various processing factors that can influence thin film microstructure, the decomposition pathway involving the formation of BaCO₃ and TiO₂ appeared to dictate thin film microstructural evolution.