Characterization of Tantalum Oxide Thin Films Prepared by Cylindrical Magnetron Sputtering: Influence of O2% in the Gas Mixture

The amorphous tantalum oxide thin films were prepared by DC reactive magnetron cylindrical sputtering onto p-type silicon (100) substrate. We report the composition and optical properties of thin films under O₂ amount variation. The sample’s reflectance was measured with a UV-Vis-NIR spectrophotometer (320–850?nm). The optical characterization of thin layers was analyzed by ellipsometry in spectral region for wavelength from 250 to 850?nm to obtain the refractive index and film’s thickness. The RMS roughness and grain size were investigated by atomic force microscope (AFM). Simulations to Rutherford backscattering spectroscopy (RBS) data revealed film’s stoichiometry. The reflectance, refractive index, thickness, RMS roughness and grain size were found to be affected by increasing oxygen amount. We calculated the porosity of grown layers using measured refractive index at the wavelength of 633?nm.     

Effect of O2 in O2/Ar Gas Mixture on Morphological and Optical Properties of TiO2 Thin Films Deposited by DC Cylindrical Magnetron Sputtering

TiO₂ films have been deposited on BK7 substrates by DC cylindrical magnetron sputtering setup in ambient temperature. The samples were fabricated at various O₂/Ar reactive gas mixtures. The effects of changing O₂ amount in O₂/Ar reactive gas mixture on structural, morphological and optical properties of films were studied. The thickness of films was measured by surface profile meter. Thickness of films decreases with increasing the O₂ amount in gas mixture. XRD studies shows that the films are amorphous. Atomic Force Microscopy was used to evaluate and compare the surface roughness and morphologies. The optical properties (transmission and reflection) of the samples were measured by UV–Vis–NIR spectrophotometer. Results show that increasing the O₂ amount in O₂/Ar mixture changes the surface morphologies and optical properties of films. All films exhibit a transmittance higher than 65 % in the visible region. The band gap of films was calculated from the optical measurements. The band gap of TiO₂ thin films increases from 3.471 to 3.526 for different O₂/Ar amounts.     

Physical Properties of Silver Oxide Thin Film Prepared by DC Magnetron Sputtering: Effect of Oxygen Partial Pressure During Growth

In this paper the physical properties of silver oxide thin film have been prepared on BK7 substrate at room temperature by reactive DC magnetron sputtering technique using pure silver metal target by varying oxygen partial pressure during growth at reported. The reactive sputter gas was a mixture of Ar (99.999%) and N₂ (99.999%) with the different ratio Ar and N₂ by volume at the constant pressure of the growth chamber. The X-ray diffraction measurements showed that by increasing O₂ volume during the Growth, change in crystalline structure will occur. The Atomic Force Microscope images shown by increasing O₂ volume, the RMS roughness decreasing consistently. The thickness of the thin films decreases (from 353 to 230 nm) with increasing oxygen partial pressure in chamber. The reflectivity of thin films was investigated with a spectrophotometer system, and the surface reflectivity measurements indicate that by increasing O₂ volume growth, the optical properties of the films changes.     

Effect of O<Subscript>2</Subscript>/Ar Mixture on the Structural and Optical Properties of ZnO Thin Films Fabricated by DC Cylindrical Magnetron Sputtering

Direct Current Cylindrical Magnetron Sputtering Setup was used to deposit ZnO thin films on BK7 substrates. The effects of changing O₂/Ar reactive gas mixtures on the structural and optical properties of films were studied. Crystallinity and structure of films were obtained by X-ray diffraction (XRD). Preferential crystalline growth orientation of ZnO films detected by XRD was always along the (002) orientation. The thickness of films was measured by surface profilometer which showed thickness increasing from 68.7 to 80.8 nm for 3–6% O₂ amount respectively. The morphology and roughness of the films were investigated by Atomic Force Microscopy (AFM). As oxygen gas amount was increased, the roughness and the grain size were decreased and the deposition rate was increased. The optical transmittance of ZnO films are obviously affected by the changing of O₂/Ar reactive gas mixtures. All films exhibit a transmittance higher than 70% in the visible region. The optical band gap of films was measured by Tauc’s method. The results show that by increasing the amount of O₂ in reactive gas mixture, the optical band gap of deposited films increases.     

磁控溅射沉积U薄膜性能研究

采用X射线光电子能谱仪(XPS)和扫描透射电镜(STEM)分析了在Al薄膜基材上磁控溅射沉积U薄膜的表面形貌、组织和结构;分别采用排代法、霍美尔(T20S)粗糙度测量仪测量了薄膜的密度和表面粗糙度.结果表明溅射沉积的U薄膜由金属U和少量UO2组成,薄膜结构属微晶和无定形态,密度是块材密度的(75±5)%,表面粗糙度小于0.3 μm.     

Influence of Microwave Power on the Properties of Hydrogenated Diamond-Like Carbon Films Prepared by ECR Plasma Enhanced DC Magnetron Sputtering

Electron cyclotron resonance (ECR) plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon (H-DLC) films. For different microwave powers, both argon and hydrogen gas are introduced separately as the ECR working gas to investigate the influence of microwave power on the microstructure and electrical property of the H-DLC films deposited on P-type silicon substrates. A series of characterization methods including the Raman spectrum and atomic force microscopy are used. Results show that, within a certain range, the increase in microwave power affects the properties of the thin films, namely the sp3 ratio, the hardness, the nanoparticle size and the resistivity all increase while the roughness decreases with the increase in microwave power. The maximum of resistivity amounts to 1.1×109 Ωcm. At the same time it is found that the influence of microwave power on the properties of H-DLC films is more pronounced when argon gas is applied as the ECR working gas, compared to hydrogen gas.     

The Effect of Substrate Temperature on the Structure and Morphology of Titanium Nitride Compounds Grown by DC Magnetron Sputtering

The TiN thin films were deposited on p-type silicon (100) substrates using reactive planar DC magnetron sputtering system. The target was 99.99% pure Ti. The reactive sputter gas was a mixture of Ar (99.999%) and N₂ (99.999%) with the ratio Ar (97%) and N₂ (3%) by volume. Structural characterization of the coating was done using X-ray diffraction (XRD). The surface roughness of the coating was determined using an Atomic Force Microscope (AFM). The reflectivity of thin films was investigated by a spectrophotometer system. The X-ray diffraction measurements showed that by increasing the substrate temperature during the growth, change in crystalline structure will occur. The crystallite size of the films determined by Scherrer’s equation, and the crystallite size measured by AFM also increased by increasing the substrate growth temperature. The surface reflectivity measurements indicate that by increasing the substrate growth temperature, the optical properties of the films changes. The change in optical properties and crystalline structure of the films indicate that substrate growth temperature plays an important role in structure and morphology of the grown layers.     

Reactive DC Magnetron Sputter Deposited Titanium-Copper-Nitrogen Nano-Composite Thin Films with an Argon/Nitrogen Gas Mixture

A sintered Ti13Cu87 target was sputtered by reactive direct current (DC) magnetron sputtering with a gas mixture of argon/nitrogen for different sputtering powers. Titanium-copper-nitrogen thin films were deposited on Si (111), glass slide and potassium bromide (KBr) substrates. Phase analysis and structural properties of titanium-copper-nitrogen thin films were studied by X-ray diffraction (XRD). The chemical bonding was characterized by Fourier transform infrared (FTIR) spectroscopy. The results from XRD show that the observed phases are nano-crystallite cubic anti rhenium oxide (anti ReO3) structures of titanium doped Cu3N (Ti:Cu3N) and nano-crystallite face centered cubic (fcc) structures of copper. Scanning electron microscopy and energy dispersive X-ray spectroscopy (SEM/EDX) were used to determine the film morphology and atomic titanium/copper ratio, respectively. The films possess continuous and agglomerated structure with an atomic titanium/copper ratio ( 0.07) below that of the original target ( 0.15). The transmittance spectra of the composite films were measured in the range of 360 to 1100 nm. Film thickness, refractive index and extinction coefficient were extracted from the measured transmittance using a reverse engineering method. In the visible range, the higher absorption coefficient of the films prepared at lower sputtering power indicates more nitrification in comparison to those prepared at higher sputtering power. This is consistent with the formation of larger Ti:Cu3N crystallites at lower sputtering power. The deposition rate vs. sputtering power shows an abrupt transition from metallic mode to poisoned mode. A complicated behavior of the films’ resistivity upon sputtering power is shown.     

Effect of N2-Gas Partial Pressure on the Structure and Properties of Copper Nitride Films by DC Reactive Magnetron Sputtering

Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.     

溅射功率对磁控溅射制备Bi薄膜结构和性能的影响

采用直流磁控溅射方法在不同功率下制备了铋(Bi)薄膜,对薄膜的沉积速率、表面形貌、生长模式、晶体结构进行了研究,并对其晶粒尺寸和应力的变化规律进行了分析。扫描电镜(SEM)图像显示：薄膜均为柱状生长,平均晶粒尺寸随溅射功率先增大后减小,薄膜的致密度随着功率的增加而降低,在60W时又变得较致密。X射线衍射(XRD)结果表明：Bi薄膜均为多晶斜六方结构,薄膜内应力随功率的增加由张应力变为压应力。     

Influence of Hysteretic Behaviour in Reactive Magnetron Sputtering on the Crystal Structure and Characteristics of Aluminium Oxide Films

The influence of the hysteretic behaviour in reactive sputtering with a pure aluminium target in the presence of argon and oxygen plasma on transmittance and surface free energy of aluminium oxide films was investigated by plasma optical emission spectroscopy technology. The evolutions of aluminium, and aluminium oxide emission lines as functions of oxygen flow rate at constant power and pressure were studied. A steep transition from the metallic sputtering to the compound sputtering was observed upon increasing the oxygen flow rate from 0.0 SCCM to above 2.0 SCCM. Then an optimal deposition zone was obtained through analyzing the hysteretic curves of aluminium and aluminium oxide emission lines. The evolution of crystal structures of samples was discerned by X-ray diffraction spectra data. Energy dispersive X-ray spectroscopy data also demonstrate the relationship between the chemical compositions of aluminium oxide films and the hysteretic behaviour. The film deposited between 1.5 SCCM and 2.0 SCCM oxygen flow rate displays an optimal and stoichiometic atomic ratio of O to Al and mass ratio of O to Al. The changes in the transmittance of samples were discovered to depend on the oxygen flow rate by UV-VIS transmittance spectra, and the changes in surface free energy were studied by contact angle measurement.     

合金化对溅射Ti膜材结构和力学性能的影响

研究了直流磁控溅射Ti、TiMo、TiMoY及TiMoYAl薄膜的形貌、结构和力学性能,探讨了合金化对Ti膜的影响。结果表明,合金化使Ti膜由α相结构转变为α+β双相结构,改变了薄膜的择优取向,降低了薄膜表面粗糙度,并改善了薄膜的力学性能。     

Structure and Magnetic Properties of Fe-N Films Prepared by Dual Ion Beam Sputtering

1. Introduction.. Much attention has recently been fOcused on Fe-Nfilms, because of their excellent magnetic propertiesin combination with their significant improvement ofcorrosion and wear resi$tance, compared with that ofpure iron. In Fe-N system alloys, many iron nitridesare well known such as a'-feamartensite, cr"-Fe16N2 57-austenite, 7'-Fe4 N j E -Fe2-3N, C-Fe2N. In particu-lar, Fe16N2 is of considerable interest due to its highsaturation magnetization of 2.8-3.0 T [1,2]. Thereare…     

Microstructure,Hardness and Corrosion Resistance of ZrN Films Prepared by Inductively Coupled Plasma Enhanced RF Magnetron Sputtering

ZrN fihns were deposited on Si（111） and M2 steel by inductively coupled plasma （ICP）-enhanced RF magnetron sputtering. The effect of ICP power on the microstructure, mechanical properties and corrosion resistance of ZrN films was investigated. When the ICP power is below 300 W, the ZrN films show a columnar structure. With the increase of ICP power, the texture coefficient （To） of the （111） plane, the nanohardness and elastic modulus of the films increase and reach the maximum at a power of 300 W. As the ICP Power exceeds 300 W, the films exhibit a ZrN and ZrNx mixed crystal structure without columnar grain while the nanohardness and elastic modulus of the films decrease. All the ZrN coated samples show a higher corrosion resistance than that of the bare M2 steel substrate in 3.5% NaCl electrolyte. The nanohardness and elastic modulus mostly depend on the crystalline structure and Tc of ZrN（111）.     

Effect of Power and Nitrogen Content on the Deposition of CrN Films by Using Pulsed DC Magnetron Sputtering Plasma

CrN thin films are deposited on stainless steel (AISI-304) substrate using pulsed DC magnetron sputtering in a mixture of nitrogen and argon plasma. Two set of samples are prepared. The first set of sample is treated at different powers (100 W to 200 W) in a mixture of argon (95%) and nitrogen (5%). The second set of samples is treated at different nitrogen concentrations (5% to 20%) in argon (95% to 80%) for a constant power (150 W). X-ray diffraction (XRD) analysis exhibits the development of new phases related to different compounds. The crystallinity of CrN varies by varying the applied power and nitrogen content. Crystallite size and residual stresses of the CrN (111) plane show similar variation for the applied power and nitrogen contents. Scanning electron microscopy (SEM) analysis shows the formation of a granular surface morphology that varies with the change of powers and nitrogen content. The thickness of the film is measured using SEM cross sectional images and using atomic force microscopy (AFM) scratch analysis. The maximum film thickness (about 755 nm) is obtained for the film deposited at 5% nitrogen in 95% argon at 150 W power. For these conditions, maximum hardness is also observed.     

Plasma-Assisted Chemical Vapor Deposition of Titanium Oxide Films by Dielectric Barrier Discharge in TiCl_4/O_2/N_2 Gas Mixtures

Low-pressure dielectric barrier discharge（DBD） TiCl4/O2and N2 plasmas have been used to deposit titanium oxide films at different power supply driving frequencies. A homemade large area low pressure DBD reactor was applied, characterized by the simplicity of the experimental set-up and a low consumption of feed gas and electric power, as well as being easy to operate. Atomic force microscopy, scanning electron microscopy, energy dispersive spectroscopy,and contact angle measurements have been used to characterize the deposited films. Experimental results show all deposited films are uniform and hydrophilic with a contact angle of about 15 o.Compared to titanium oxide films deposited in TiCl4/O2gas mixtures, those in TiCl4/O2/N2gas mixtures are much more stable. The contact angle of titanium oxide films in TiCl4/O2/N2gas mixtures with the addition of 50% N2 and 20% TiCl4 is still smaller than 20 o, while that of undoped titanium oxide films is larger than 64 owhen they are measured after one week. The low-pressure TiCl4/O2plasmas consist of pulsed glow-like discharges with peak widths of several microseconds, which leads to the uniform deposition of titanium oxide films. Increasing a film thickness over several hundreds of nm leads to the film’s fragmentation due to the over-high film stress. Optical emission spectra（OES） of TiCl4/O2DBD plasmas at various power supply driving frequencies are presented.     

Microstructure and Mechanical Properties of CrN Films Deposited by Inductively Coupled Plasma Enhanced Radio Frequency Magnetron Sputtering

CrN films have been synthesized on Si（100） wafer by inductively coupled plasma （ICP）-enhanced radio frequency （RF） magnetron sputtering. The effects of ICP power on microstructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power.