溶胶-凝胶法制备ITO薄膜研究进展

概述了近年来国内外溶胶-凝胶法(Sol-Gel)制备ITO薄膜的研究状况,对Sol-Gel法制备ITO薄膜工艺做了简要介绍,重点讨论了Sol-Gel法制备ITO薄膜的溶胶体系,分析比较了有机醇盐、无机盐以及掺入ITO粉末方法体系的优缺点,最后讨论了甩膜法、提拉法及平铺法在Sol-Gel法制备ITO薄膜中镀膜的应用.指出Sol-Gel法是一种高效可行的制备ITO薄膜的方法,有着广阔的应用前景.     

ITO透明导电薄膜的研究进展

介绍了ITO薄膜的基本特性和透明导电原理,综述了ITO薄膜主要的制备技术及其研究进展,并指出了不同制备方法的优缺点.还对ITO薄膜晶格常数畸变、载流子浓度上限和最佳掺杂量、红外反射率、光吸收边的移动等基础理论研究进展进行了归纳.今后,还需要在低温或室温ITO薄膜的制备、ITO薄膜的导电机理、纳米尺度ITO材料的特性等方面加强研究.     

磁控溅射Zr掺杂ITO薄膜在3种模拟腐蚀环境中的电学稳定性和耐腐蚀性

过去,鲜有Zr掺杂氧化铟锡（ITO）薄膜电学稳定性及耐蚀性的研究报道。采用磁控溅射法制备了ITO薄膜和Zr掺杂ITO薄膜（ITO：Zr）,研究了2种薄膜的微观结构、光电性能及其在3种模拟腐蚀环境（酸性、海洋、工业）腐蚀液中的电学稳定性及耐腐蚀性。结果表明：Zr的掺杂导致了ITO薄膜择优取向向（400）晶面转变,ITO：Zr薄膜比ITO薄膜具有更好的光电性能;2种薄膜在3种环境介质中都能发生自钝化,在工业环境中具有最好的耐腐蚀性能;ITO：Zr薄膜比ITO薄膜具有更好的电学稳定性和耐腐蚀性。     

水热法制备ITO薄膜的研究

以铟锡氯化物为原料,采用水热法在玻璃基片上制备了氧化铟锡(ITO)薄膜,并利用X射线衍射(XRD)、能谱分析(EDS)、扫描电子显微镜(SEM)等手段对薄膜的相结构、化学组成及形貌进行了表征,研究了水热温度和时间等条件对ITO薄膜光吸收特性的影响.结果表明,水热法制备的ITO薄膜呈体心立方多晶结构且均匀、致密.薄膜在可见光区透射比可达98.2%,具备低成本大规模制备ITO薄膜的潜力.     

ITO薄膜直流反应磁控溅射制备及性能研究

以90wt%In和10wt%Sn铟锡合金为靶材,采用直流磁控反应溅射法在玻璃基片制备ITO透明导电薄膜.用紫外-可见光分光光度计、四探针电阻仪、XRD和SEM分别测试了ITO薄膜的紫外-可见光透射光谱、方块电阻、薄膜的结构和表面形貌.研究了氧分压对ITO薄膜性能的影响.实验结果表明,ITO薄膜随着氧分压的增加,薄膜紫外透射光谱的吸收截止边带向短波长方向漂移.随着氧分压的增大,ITO薄膜的方块电阻增加,结晶程度变好,晶粒尺寸变大.     

直流反应磁控溅射法制备太阳电池用ITO透明导电膜

采用直流反应磁控溅射法制备了ITO透明导电薄膜,针对氧流量、溅射气压、溅射电流3种工艺参数对ITO薄膜电阻率和可见光区透射率的影响进行了分析和研究。结果表明:从ITO薄膜作为太阳电池用减反射层和电极出发,得到了工艺参数的优化值,分别为氧流量0.2 ml/min(标准状态),溅射气压3 Pa和溅射电流0.2 A,ITO薄膜的电阻率为3.7×10-3Ω.cm,透过率(550 nm)高达93.3%。另外,利用该优化工艺条件下制备的ITO薄膜作为电极和减反射层,制备了结构为ITO/n+-nc-Si∶H/-i nc-Si:H/p-c-Si/Ag的太阳能电池,电池开路电压Voc达到534.7mV,短路电流Isc达到49.24mA(3 cm2),填充因子为0.4228。     

磁控溅射制备ITO薄膜光电性能的研究

采用直流磁控溅射方法在玻璃基底上制备了ITO薄膜.分别用分光光度计和四探针仪测试了所制备ITO薄膜在可见光区域内的透过率和电阻率,研究了溅射气压、氧氩流量比和溅射功率三个工艺参数对ITO薄膜光电性能的影响.研究结果表明,制备ITO薄膜的最佳工艺参数为:溅射气压0.6 Pa,氧氩流量比1:40,溅射功率108 W.采用此工艺参数制备的ITO薄膜在可见光区平均透过率为81.18％,薄膜电阻率为8.9197×10-3Ω·cm.     

低温直流磁控溅射制备ITO薄膜工艺研究

采用低温直流磁控溅射法针对附有有机聚合物玻璃磁控镀制ITO薄膜,通过四探针、紫外可见分光亮度计对样品进行表征,研究了基底温度、溅射功率对ITO薄膜光电性能影响,试验表明:在附有有机聚合物的玻璃上低温直流磁控溅射法制备ITO薄膜,随着基底温度的增加方块电阻先下降后增加,透过率先增加后略微减少;随着溅射功率的增加,薄膜方块电阻减少,透过率降低。     

喷雾热分解法制备ITO薄膜及其光电性能研究

采用自制的喷雾热分解装置在玻璃衬底上制备ITO薄膜,并对实验条件进行了正交设计,以考察制备ITO薄膜的优良条件,结果表明,影响ITO薄膜光电性能的主要因素是基板温度。制备ITO薄膜的优化条件为：基板温度300℃,载气气流速度1L·min^-1,退火温度540℃,溶液配比为铟锡比10：1,喷嘴与基板距离8cm,薄膜沉积时间3．5min,相应的透光率为97％,方块电阻3875Ω／。     

氧化铟锡纳米晶薄膜的制备及其电致变色性能EI

采用一锅法合成不同形貌、尺寸的氧化铟锡(ITO)纳米晶,并通过旋涂工艺制备ITO纳米晶薄膜,研究不同形貌、尺寸ITO纳米晶制备的薄膜的近红外光谱调控性能。结果表明:5次旋涂后,ITO纳米晶薄膜的可见光透过率为89.2%,电阻率为54Ω·cm。平均直径为(6.88±1.53)nm的均匀球形ITO纳米晶制备的薄膜表现出最优的近红外光谱调控能力,在施加±2.5 V电压后,其在2000 nm的光谱调制量为39.3%,光密度变化量为0.43。在电致变色前后,ITO纳米晶薄膜始终保持高可见光透过率。ITO纳米晶的电致变色是由于电子注入/脱出导致的局域表面等离子体共振(LSPR)频率和强度变化引起,其电致变色过程是通过电容充放电实现的。     

Round pinholes in indium-tin-oxide thin films on the glass substrates: a Taguchi method analysis and theoretical approach to their origins

The origin of the round pinholes, ranging 30-70 μm in diameter, in indium-tin-oxide (ITO) thin films on the glass substrates were investigated. It has been found that the round pinholes in ITO thin films might arise from the tiny particles and organics, adsorbed onto the residual water of imperfectly pre-dried glass substrates at the pre-drying bath. The tiny particles and organics on the glass substrates might cause to weaken the adhesive powers between the ITO thin films and the glass substrates, finally resulting in the round pinholes at the photopatterning process.By Taguchi methods, it was revealed that the generation of the round pinholes in ITO thin films was directly related to the temperature and the amount of heat supply at the pre-drying bath. A simplified mechanism on the formation of the round pinholes in ITO thin films is proposed and verified.     

Preparation and optimization of epitaxial growth of transparent ZnO nanotip thin films by hydrothermal method

Zinc oxide (ZnO) nanotip thin films were prepared on ZnO coated nanocrystalline ITO/glass substrates by hydrothermal method. In order to obtain the ZnO nanotip arrays with high aspect ratio, the experimental conditions were optimized. The scanning electron microscope images showed that the surface morphology of ZnO thin films could be easily manipulated by changing the seed layer thickness and growth time. The ZnO nanotip thin films were grown epitaxially on ZnO seed layer coated ITO/glass substrates. The surface morphology of ZnO thin films on ITO/glass substrate changed from nanorods with a flat-top end to nanotips as the growth time was increased from 3 to 15 h. The ZnO thin films prepared under these deposition conditions were highly oriented along (002) direction. The as-prepared sample (15 h) was annealed at different temperatures (30, 100, 150, and 270 degrees C). The surface morphologies of annealed ZnO thin films did not show any remarkable change and the best crystallinity was observed at 100 degrees C. The photoluminescence spectra showed that the near band edge emission shifted to shorter wavelength as the annealing temperature was increased from 30 to 270 degrees C, it was due to the intrinsic stress in the films. This was confirmed by X-ray diffraction analyses. NPB thin films were prepared on ITO/clay and ITO/glass substrates by thermal evaporation method. The electrical properties of Ag/NPB/ITO/Clay showed the Ohmic characteristics (J proportional V(1.0)). The J-V characteristic of Ag/NPB/PMMA/ZnO/ITO/Glass showed good rectification behaviour with a diode-ideality factor of 1.36.     

Structural instability of Sn-doped In2O3 thin films during thermal annealing at low temperature

We report on observations of structural stability of Sn-doped In₂O₃ (ITO) thin films during thermal annealing at low temperature. The ITO thin films were deposited by radio-frequency magnetron sputtering at room temperature. Transmission electron microscopy analysis revealed that the as-deposited ITO thin films are nanocrystalline. After thermal annealing in a He atmosphere at 250 °C for 30 min, recrystallization, coalescence, and agglomeration of grains were observed. We further found that nanovoids formed in the annealed ITO thin films. The majority of the nanovoids are distributed along the locations of the original grain boundaries. These nanovoids divide the agglomerated larger grains into small coherent domains.     

ITO薄膜的制备以及性能的研究

在室温条件下通过直流磁控溅射法在普通玻璃基体上制备了光电性能优良的ITO薄膜。靶材为ITO陶瓷靶,其中In2O3与SnO2的质量比为9∶1。运用UV-2550紫外可见光光度计测量样品的透光率,采用SZT-2四探针测试仪测量样品表面的电阻率,用扫描电镜(SEM)对样品进行表征。研究了溅射压强、溅射功率等参数对薄膜光电性能的影响。研究表明,ITO薄膜的电阻率随着溅射功率的增大而减小,在溅射功率为110W时ITO薄膜的透光率有相对好的数值。溅射压强为1.0Pa时既能保持ITO薄膜低的电阻率又能保证高的透光率。     

磁控溅射低温沉积ITO薄膜及其光电特性研究

采用直流反应磁控溅射法低温沉积ITO薄膜,用XRD、SEM和UV—Vis分别表征ITO薄膜的晶体结构、表面形貌及其紫外-可见光吸收谱,研究了氧分压、溅射功率及薄膜厚度等工艺参数对薄膜光电性能的影响,结果表明,氧分压过大时,ITO薄膜中有大量的位错和缺陷,使薄膜的电阻率变大,导电性变差;氧分压过小时,薄膜中将有大量氧空位产生,导致晶格变形,使电阻率增加。随着溅射功率增大,在相同时间内薄膜厚度增加,方块电阻减小,薄膜电阻率降低。随着薄膜厚度增加,制备的薄膜晶体结构相对完整,载流子浓度和迁移率逐渐增大,薄膜电阻率变小,进而对样品的光电性能产生明显影响。     

Refractive indices of textured indium tin oxide and zinc oxide thin films

The refractive indices of textured indium tin oxide (ITO) and zinc oxide (ZnO) thin films were measured and compared. The ITO thin film grown on glass and ZnO buffered glass substrates by sputtering showed distinct differences; the refractive index of ITO on glass was about 0.05 higher than that of ITO on ZnO buffered glass in the whole visible spectrum. The ZnO thin film grown on glass and ITO buffered glass substrates by filtered vacuum arc also showed distinct differences; the refractive index of ZnO on glass was higher than that of ZnO on ITO buffered glass in the red and green region, but lower in the blue region. The largest refractive index difference of ZnO on glass and ITO buffered glass was about 0.1 in the visible spectrum. The refractive index variation was correlated with the crystal quality, surface morphology and conductivity of the thin films.     

直流磁控溅射功率对ITO薄膜光学性能的影响

本实验的ITO薄膜样品是利用直流磁控溅射技术在玻璃基片上沉积而成的。通过改变溅射功率,研究不同溅射功率对ITO薄膜光学性能的影响。经各实验测试后发现：在实验给定的功率区间内,ITO薄膜的厚度随着溅射功率的增加而增加,其可见光透过率则随之降低。