AM—LCD用TFT有源矩阵的性能研究

ＴＦＴ有源矩阵赋予ＡＭ－ＬＣＤ以所有平板显示器（ＦＰＤ）的最佳性能，使其性能已能够等于或好于最为流行的ＣＲＴ显示器件。本文讨论了ＴＦＴ有源矩阵的性能，描述了在像素电极上充电或放电的电压精度要求，介绍了ＴＦＴ－ＬＣＤ的最新进展。     

寻像器用0.7英寸poly—SiTFT—LCD

寻像器用０．７英寸ｐｏｌｙ—ＳｉＴＦＴ—ＬＣＤ（索尼）林久雄等１前言便携式一体化摄录机的性能提高，一个重要因素是实现寻像器的彩色化和小型化，为此目的而开发了多晶硅ＴＦＴ—ＬＣＤ，用有源矩阵方式实现０．７英寸画面和具有１０．３万个像素的高精细化，把高迁...     

低温多晶硅TFT—LCD生产动向

低温多晶硅ＴＦＴ－ＬＣＤ生产动向１９９８～９９年间,低温多晶硅（Ｐｏｌｙｓｉ）ＴＦＴ－ＬＣＤ将正式开始批量生产,但目前尚未明确形成市场环境。人们显然可以考虑利用低温Ｐｏｌｙ－ｓｉＴＦＴ－ＬＣＤ替代现用高温Ｐｏｌｙｓｉ　ＴＦＴ－ＬＣＤ并在数字照相机、摄...     

共面开关模式TFT—LCD的航空应用

航空应用的ＩＰＳ模式２６ｃｍ ＴＦＴ－ＬＣＤ具有±７０°宽视角，４００ｎｉｔｓ的高亮度和－３０℃－７０℃的宽工作温度范围。为实现以上性能采用了新的ＬＣ的材料，像素电极和公共电极处于顶层的新型共面开关ＴＦＴ矩阵结构及新的黑底结构。     

薄膜晶体管矩阵液晶显示器的无缺陷技术

分析了薄膜晶体管矩阵液晶显示器的缺陷分类,成因,研制了ＴＦＴ－ＬＣＤ短,断路缺陷检测和全板显示检测的测试析,系统介绍了各种缺陷的激光补技术和ＴＦＴ－ＬＣＤ屏的冗余技术,作者在美期间开发出了利用减法激光修补仪进行加法修补的独特工艺。     

最新液晶显示技术追踪

本文介绍近年来在显示性能的提高、ρ－Ｓｉ ＴＦＴ－ＬＣＤ的开发、反射式彩色液晶显示和塑料基板ＬＣＤ等方面的研究开发工作的进展情况和发展趋势。     

有源矩阵TFT LCD技术和产业

ＬＣＤ是当前方兴未艾的世界平板显示的主流显示器件,本文对发展前景最为广阔的有源矩阵ＴＦＴ ＬＣＤ显示器件技术和产业及市场动态作一概要的报导和分析。     

宽视角TFT—LCD的混合转换方式

本文就可获得宽视角ＴＦＴ－ＬＣＤ的混合转换（ＨＳ）方式提出论证，在新开发的ＨＳ方式中，象素电采是用来作用于垂直和水平方向的电场，这对高显示性能及宽视角极为有效。我们采用ＨＳ方法开发出了高性能３６ｃｍ的ＴＦＴ－ＬＣＤ监示器。     

薄膜晶体管寻址液晶显示器中栅延迟导致的图像信号失真

考虑栅信号线电阻、栅民源信号线的交叠电容以及ＴＦＴ导电沟道电容所构成的ＲＣ常数对栅延迟的影响，建立了ａ－ＳｉＴＦＴ－ＬＣＤ的等效电路模型。讨论了栅信号延迟对液晶显示屏尺寸、显示分辨率及民极材料的依赖关系。计算了用典型金属材料作民极时，在栅线的不直，象素电容的最大充电能力与栅延迟，为大面积、高分辨率ＴＦＴ－ＬＣＤ提供了设计依据。     

a—SiTFT有源矩阵液晶显示器的研制进展

本文全面介绍了我们在ａ－ＳｉＴＦＴ－ＡＬＭＬＣ“八五”科技攻关研究中的ＴＦＴ矩阵模拟与优化设计，性能改善，提高矩阵板一致性和完整性，液晶封屏以及视频显示设计与实现等方面所做的工作。     

非晶氧化物半导体薄膜晶体管沟道层的研究进展

薄膜晶体管(TFT)作为开关元件广泛应用于平板显示领域,沟道层材料的选择直接影响了TFT的性能.近年来,基于非晶氧化物半导体(AOS)沟道层材料的TFT已成为具有潜力替代传统硅材料(非晶硅或多晶硅)沟道层TFT的新一代技术,有望应用于超大屏显示、3D显示、柔性显示以及透明显示等新一代显示领域.综述了AOS TFT沟道层的研究进展,重点介绍了AOS TFT用AOS沟道层在材料体系、成膜技术、薄膜的后续处理工艺、材料体系中各元素含量以及掺杂等方面的研究成果,并分析了AOS沟道层对AOS TFT性能的影响以及存在的问题,对AOS TFT的未来发展趋势进行了预测和展望.     

多晶硅薄膜晶体管RPI模型的直流参数提取

多晶硅薄膜晶体管(TFT)在有源液晶显示器中的应用充分显示了它的性能优点。对多晶硅TFT进行模型分析和参数提取是理解多晶硅TFT工作原理和指导制备的有效途径。归纳并讨论了多晶硅薄膜晶体管RPI模型直流参数的提取策略。此参数提取步骤简单,并能准确地提取所有工作区的基本直流参数,如阈值电压、漏源区串联寄生电阻、有效沟道长度、迁移率等。参数提取的方法将为RPI模型的电路仿真提供有益的参考。最后,提出了改进RPI模型参数提取策略的方向,包括提高泄漏电流参数、迁移率参数的准确度等。     

GaN基TFT-LED有源阵列显示芯片的设计研究

对GaN基TFT-LED有源阵列显示芯片结构进行了优化设计,并详细介绍了它的工作原理。文中采用Cadence公司的Virtuoso Spectre Circuit Simulator软件,通过设计芯片像素单元TFT晶体管的参数,研究了阵列芯片中LED的输出电流波形。仿真结果显示通过阵列芯片中LED电流达到了54.86mA,为芯片提供了足够的导通电流。研究结果表明TFT-LED有源阵列显示芯片结构的优势在于减少外围设备的同时增大导通电流。     

Electrical simulation of the flicker in poly-Si TFT-LCD pixels for the large-area and high-quality TFT-LCD development and manufacturing

In this paper, we present a new flicker evaluation model through the electrical simulation of the optical flicker phenomena in different kinds of poly-Si TFT-LCD arrays for the development and manufacturing of large-area and high-quality TFT-LCDs. We applied our flicker evaluation model to three different types of TFTs; excimer laser annealed (ELA) poly-Si TFT, silicide mediated crystallization (SMC) poly-Si TFT, and counter-doped lateral body terminal (LBT) poly-Si TFT. We compared the flicker quantitatively for these three different TFT-LCDs on 40 in. UXGA scale. We identified three major factors causing the flicker such as charging time, kickback voltage and leakage current, analyzed their relative contributions to the flicker, and evaluated the values of the flicker in decibel (dB) for the three different TFT-LCD arrays. In addition, we show that the flicker is very sensitive to the low-level (minimum) gate voltage due to the large leakage current of the poly-Si TFT, and the low-level gate voltage should be chosen carefully to minimize the flicker.     

三端子有源矩阵液晶显示器

主要介绍了ＴＦＴ特别是ａ－ＳｉＴＦＴ矩阵寻址的液晶显示器的结构、制作工艺、工作原理、动态和驱动特性，并着重对其器件参数的选择进行了分析，为今后器件的设计提供了理论依据。同时也介绍了其它三端子方式ＡＭＬＣＤ的特点及所存在的问题。     

Channel Protection Layer Effect on the Performance of Oxide TFTs

We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al‐doped zinc tin oxide (AZTO) TFT. Deposition of an ultra‐thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo‐resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.     

基于柔性PI基底的氧化物IGZO TFT器件工艺及特性研究

讨论了基于柔性PI基底上的底栅型TFT器件工艺,通过工艺优化解决了双层结构干刻速率不同造成的下切角形状。本文TFT器件是基于氧化物IGZO为有源层,栅绝缘层采用Si3N4/SiO2双层结构,采用两次补偿曝光、干刻方式消除干刻引入的下切角形状,有效解决了薄膜沉积引入的断线风险。实验结果表明,经过SEM断面观察,干刻后双层结构taper角度适合TFT器件后续沉膜条件,柔性基底上制作的TFT器件迁移率达到14.8cm2/(V·s),阈值电压Vth约0.5V,亚域值摆幅SS约0.5V/decade,TFT器件的开关比Ion/Ioff106。通过此方法制作出的器件性能良好,满足LCD、OLED或电子纸的驱动要求。     

Amorphous silicon thin-film transistor with fluorinated siliconoxide ion stopper

We propose fluorinated silicon oxide (SiOF) as the ion-stopper of bottom-gate amorphous silicon thin film transistors (a-Si:H TFTs). The low dielectric constant SiOF on both the back-channel of the TFT and the crossover regions of gate/data lines can contribute to reducing the RC delay of the gate pulse signal in active-matrix liquid-crystal displays. Besides, the a-Si:H TFT with a SiOF stopper shows an improved performance compared to the widely-employed silicon nitride (SiN_x ) stopper TFT, because the fluorine incorporation reduces the interface state density between a-Si:H and SiOF     

A Testing Method on Poly-Si Thin-Film Transistor Array for Active-Matrix Organic Emitting Display

A novel method is introduced using to evaluate the quality of thin-film transistor (TFT) array for driving active-matrix display (OLED). By the means of this method, the operation states of the TFT or the defects of TFT can be judged. It is a current testing method with the advantages of fast response, excellent precision, no effect to aperture and no damage to the display array.     

A new pixel circuit for active matrix organic light emitting diodes

We propose a new thin-film-transistor (TFT) pixel circuit for active-matrix organic light-emitting diode (AMOLED) composed of four TFTs and two capacitors. The simulation results, based on the device performances measured for an OLED and a poly-Si TFT, indicate that the proposed circuit has high immunity to the variation of poly-Si TFT characteristics