Fabrication of high thermal conductivity silicon nitride ceramics by pressureless sintering with MgO and Y2O3 as sintering additives

The fabrication of silicon nitride (Si₃N₄) ceramics with a high thermal conductivity was investigated by pressureless sintering at 1800 °C for 4 h in a nitrogen atmosphere with MgO and Y₂O₃ as sintering additives. The phase compositions, relative densities, microstructures, and thermal conductivities of the obtained Si₃N₄ ceramics were investigated systemically. It was found that at the optimal MgO/Y₂O₃ ratio of 3/6, the relative density and thermal conductivity of the obtained Si₃N₄ ceramic doped with 9 wt% sintering aids reached 98.2% and 71.51 W/(m·K), respectively. EDS element mapping showed the distributions of yttrium, magnesium and oxygen elements. The Si₃N₄ ceramics containing rod-like grains and grain boundaries were fabricated by focused ion beam technique. TEM observations revealed that magnesium existed as an amorphous phase and that yttrium produced a new secondary phase.     

Effects of Gd2O3 and MgSiN2 sintering additives on the thermal conductivity and mechanical properties of Si3N4 ceramics

Si₃N₄ ceramics were prepared by gas pressure sintering at 1900°C for 12 h under a nitrogen pressure of 1 MPa using Gd₂O₃ and MgSiN₂ as sintering additives. The effects of the Gd₂O₃/MgSiN₂ ratio on the densification, microstructure, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were systematically investigated. It was found that a low Gd₂O₃/MgSiN₂ ratio facilitated the thermal diffusivity of Si₃N₄ ceramics while a high Gd₂O₃/MgSiN₂ ratio benefited the densification and mechanical properties. When the Gd₂O₃/MgSiN₂ ratio was 1:1, Si₃N₄ ceramics obtained an obvious exaggerated bimodal microstructure and the optimal properties. The thermal conductivity, flexural strength, and fracture toughness were 124 W·m⁻¹·k⁻¹, 648 MPa, and 9.12 MPa·m^1/2, respectively. Comparing with the results in the literature, it was shown that Gd₂O₃-MgSiN₂ was an effective additives system for obtaining Si₃N₄ ceramics with high thermal conductivity and superior mechanical properties.     

High thermal conductivity of spark plasma sintered silicon carbide ceramics with yttria and scandia

A fully dense SiC ceramic with a room‐temperature thermal conductivity of 262 W·(m·K)^?1 was obtained via spark plasma sintering β‐SiC powder containing 0.79 vol% Y₂O₃‐Sc₂O₃. High‐resolution transmission electron microscopy revealed two different SiC‐SiC boundaries, that is, amorphous and clean boundaries, in addition to a fully crystallized junction phase. A high thermal conductivity was attributed to a low lattice oxygen content and the presence of clean SiC‐SiC boundaries.     

Electrically conductive SiC ceramics processed by pressureless sintering

Polycrystalline SiC ceramics with 10 vol% Y₂O₃-AlN additives were sintered without any applied pressure at temperatures of 1900-2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 10¹ to 1.9 × 10⁻² Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain-growth-induced N-doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω⁻¹·cm⁻¹ at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid-phase sintered SiC ceramics.     

Synergistic effect of binary fluoride sintering additives on the properties of silicon nitride ceramics

A variety of combinations of YF₃ and MgF₂ were used as sintering aids in the fabrication of Si₃N₄ ceramics via gas pressure sintering (GPS). The synergistic effects of YF₃ and MgF₂ on the liquid viscosity, mechanical properties, thermal conductivities, and grain growth kinetics of the Si₃N₄ ceramics were investigated. The results showed that appropriately adjusting the YF₃/MgF₂ ratio could decrease liquid viscosity, reducing the diffusion energy barrier of the solute atom and promoting mass transfer. Meanwhile, the chemical bonding strength in the grain boundary complexions formed by the metal cations also influenced grain boundary migration. Samples doped with 4 mol% YF₃ and 2 mol% MgF₂ achieved the lowest grain growth exponent (n = 2.9) and growth activation energy (Q = 616.7 ± 16.5 kJ mol^?1) as well as the highest thermal conductivity (83 W m^?1 K^?1) and fracture toughness (8.82 ± 0.13 MPa m^1/2).     

Fabrication of Si3N4 ceramics substrates with high thermal conductivity by tape casting and gas pressure sintering

In this paper, high thermal conductivity Si₃N₄ ceramics were successfully fabricated through exploring and optimizing the tape casting process. The impact of various organic additives on the rheological characteristics of Si₃N₄ slurry was explored, and the pore size distribution and microstructure of the green tapes at different solid loadings were investigated, as well as the microstructure of Si₃N₄ ceramics. Green tapes with a narrow pore size distribution, a small average pore size, and a high density of 1.88 g cm⁻³ were prepared by the investigation and optimization of the Si₃N₄ slurry formulation. After gas pressure sintering, Si₃N₄ ceramics with a density of 3.23 g cm⁻³, dimensions of 78 mm × 78 mm, and a thickness of 0.55 mm were obtained. The microstructure of the Si₃N₄ ceramics showed a bimodal distribution and a low content of glassy phases. The thermal conductivity of the Si₃N₄ ceramics was 100.5 W m⁻¹ K⁻¹, the flexural strength was 735 ± 24 MPa, and the fracture toughness was 7.17 MPa m^1/2.     

Investigation on low-temperature sintered AlN nanoceramics with high thermal conductivity

The aim of this research was to investigate the effect of sintering additive and relatively low-sintering temperature on the thermal conductivity of aluminum nitride nanoceramic. While using nanosized AlN powder and liquid-phase sintering additives, the various sintering processes were performed at temperatures 1400 and 1500°C for several hours. In the analysis methods, thermal conductivity (K) and thermal diffusivity (α) were measured using thermal conductivity analyzer (Hot Disk), scanning electron microscope (SEM) was used to observe the surface morphology of the microstructure, x-ray diffraction analyzer (XRD) to analyze the grain size and crystal structure, Raman spectroscopy (Raman) emission spectrum was analyzed to identify the material microstructure and the densities of AlN specimens were measured by Archimedes method. It was found that the thermal conductivity is related to the densification of nanosize low-temperature sintered material, which can be controlled by additives and sintering temperature. With Y₂O₃ sintering add, the densification of AlN for low-temperature sintering increased by the factor of ～5% to ～12%, and the thermal conductivity was enhanced by 25%. The relative density observed in this research is about 78%-84%, and the thermal conductivity measured is in the range of 9-14 W/mK.     

Effect of MgF2 addition on mechanical properties and thermal conductivity of silicon nitride ceramics

Dense silicon nitride (Si₃N₄) ceramics were prepared using Y₂O₃ and MgF₂ as sintering aids by spark plasma sintering (SPS) at 1650 °C for 5 min and post-sintering annealing at 1900 °C for 4 h. Effects of MgF₂ contents on densification, phase transformation, microstructure, mechanical properties, and thermal conductivity of the Si₃N₄ ceramics before and after heat treatment were investigated. Results indicated that the initial temperature of liquid phase was effectively decreased, whereas phase transformation was improved as increasing the content of MgF₂. For optimized mechanical properties and thermal conductivity of Si₃N₄, optimum value for MgF₂ content existed. Sample with 3 mol.% Y₂O₃ and 2 mol.% MgF₂ obtained optimum flexural strength, fracture toughness and thermal conductivity (857 MPa, 7.4 MPa m^1/2 and 76 W m⁻¹ K⁻¹, respectively). It was observed that excessive MgF₂ reduced the performance of the ceramic, which was caused by the presence of excessive volatiles.     

On the fabrication and mechanical properties of Si3N4 ceramics with low content sintering additives

Si₃N₄ ceramics were prepared by hot pressing (HP) and spark plasma sintering (SPS) methods using low content (5 mol%) Al₂O₃–RE₂O₃(RE = Y, Yb, and La)–SiO₂/TiN as sintering additives/secondary additives. The effects of sintering additives and sintering methods on the composition, microstructures, and mechanical properties (hardness and fracture toughness) were investigated. The results show that fully density Si₃N₄ ceramics could be fabricated by rational tailoring of sintering additives and sintering method, and TiN secondary additive could promote the density during HP and SPS. Besides, SN-AYS-SPS possesses the most competitive mechanical properties among all the as-prepared ceramics with the Vickers hardness as 17.31 ± .43 GPa and fracture toughness as 11.07 ± .48 MPa m^1/2.     

烧结助剂对低温制备碳化硅多孔陶瓷性能的影响

分别采用十二烷基苯磺酸钠、氢氧化钠以及NaA分子筛残渣为烧结助剂,碳粉为造孔剂,干压法成型,在1150℃空气气氛下烧结制备碳化硅多孔陶瓷支撑体。考察了助剂添加量对微结构、平均孔径、孔隙率以及抗热震性等方面的影响;分析了添加助剂的低温烧成机理。研究结果表明：三种添加剂均有助于提高支撑体的气体渗透性、抗弯强度和耐热震性;添加NaA分子筛残渣助烧结剂获得的碳化硅多孔陶瓷各项性能最佳,气体渗透率为1300 m³/(m²·h·kPa),强度可达27 MPa,且抗热震性能良好。     

Effects of Y2O3/MgO ratio on mechanical properties and thermal conductivity of silicon nitride ceramics

In this work, the effects of Y₂O₃/MgO ratio on the densification behavior, phase transformation, microstructure evolution, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were investigated. Densified samples with bimodal microstructure could be obtained by adjusting the ratio of Y₂O₃/MgO. It was found that a low Y₂O₃/MgO ratio facilitated the densification of Si₃N₄ ceramics while a high Y₂O₃/MgO ratio benefited the phase transformation of Si₃N₄ ceramics. Best mechanical properties (flexural strength of 875 MPa, and fracture toughness of 8.25 MPa·m^1/2, respectively) and optimal thermal conductivity of 98.04W/(m·K) were achieved in the sample fabricated with Y₂O₃/MgO ratio of 3:4 by sintering at 1900°C for 4 h.     

Relation between crystal structure and lattice oxygen content of sintered reaction-bonded silicon nitride

When reaction-bonded silicon nitride containing MgO/Y₂O₃ additives is sintered at three different temperatures to form sintered reaction-bonded silicon nitride (SRBSN), the thermal conductivity increases with sintering temperature. The β-Si₃N₄ (silicon nitride) crystals of SRBSN ceramics were synthesized and characterized to investigate the relation between the crystal structure and the lattice oxygen content. The hot-gas extraction measurement result and the crystal structure obtained using Rietveld analysis suggested that the unit cell size of the β-Si₃N₄ crystal increases with the decrease in the lattice oxygen content. This result is reasonable considering that the lattice oxygen with the smaller covalent radius substitutes nitrogen with the larger one in the β-Si₃N₄ crystals. The lattice oxygen content decreased with increasing sintering temperature which also correlated with increase in thermal conductivity. Moreover, it is noteworthy from the viewpoint that it may be possible to apply the lattice constant analysis for the nondestructive and simple measurement of the lattice oxygen content that deteriorates the thermal conductivity of the β-Si₃N₄ ceramics.     

Thermal conductivity and mechanical properties of Si3N4 ceramics with binary fluoride sintering additives

Silicon nitride (Si₃N₄) ceramics were fabricated by gas pressure sintering (GPS) using four sintering additives: Y₂O₃–MgO, Y₂O₃–MgF₂, YF₃–MgO, and YF₃–MgF₂. The phase composition, grain growth kinetics, mechanical properties, and thermal conductivities of the Si₃N₄ ceramics were compared. The results indicated that the reduction of YF₃ on SiO₂, induced a high Y₂O₃/SiO₂ secondary phase ratio, which improved the thermal conductivity of the Si₃N₄ ceramics. The depolymerization of F atom reduces the diffusion energy barrier of solute atom and weakens the viscous resistance of anion group, which was beneficial to grain boundary migration. Besides exhibiting a lower grain growth exponent(n = 2.5)and growth activation energy (Q = 587.94 ± 15.35 kJ/mol), samples doped with binary fluorides showed excellent properties, including appreciable thermal conductivity (69 W m⁻¹ K⁻¹), hardness (14.63 ± 0.12 GPa), and fracture toughness (8.75 ± 0.18 MPa m^1/2), as well as desirable bending strength (751 ± 14 MPa).     

Study on robust additive of CaCO3 for fast fabrication of highly transparent AlON ceramics by pressureless sintering

Fabrication of transparent AlON ceramics is extra sensitive to both particle size of starting powder and sintering additive due to shuttling transformation between AlON and Al₂O₃ + AlN during heating. One possible solution is to select robust additive to suppress the shuttling transformation. In this work, three AlON powders with different median particle sizes of 0.6, 0.9, and 1.1 μm were prepared. After studying the effect of CaCO₃ on densification process, AlON ceramics with the maximum transmittance of ≥81.1% were successfully fast prepared by pressureless sintering (PS) at 1880°C for only 2.5 h by using three AlON powders doped with different CaCO₃ amount. Specifically, AlON ceramics prepared from 1.1 μm with 0.5–0.8 wt.% CaCO₃ doping consistently showed the maximum transmittance of ≥85.3%, which indicates that CaCO₃ can serve as a robust additive to enable fast fabrication of highly transparent AlON ceramics even by PS.     

Mechanical,dielectric and thermal properties of porous boron nitride/silicon oxynitride ceramic composites prepared by pressureless sintering

Porous boron nitride/silicon oxynitride (BN/Si₂N₂O) composites were fabricated by pressureless sintering at 1650 °C with Li₂O as sintering aid. The influence of Li₂O and hexagonal boron nitride (h-BN) contents on phase, microstructure, mechanical, dielectric and thermal properties of the resulting porous BN/Si₂N₂O composites was investigated. Increasing Li₂O content facilitated densification and decomposition of Si₂N₂O into Si₃N₄. The apparent porosity of the composites increases with the h-BN content increases and Si₂N₂O grain growth was restrained by the dispersed h-BN particles. The dielectric properties and thermal conductivities (TC) were affected mainly by porosity. Porous BN/Si₂N₂O ceramic composites with 4 mol% Li₂O and 25 mol% BN exhibit both low dielectric constant (3.83) and dielectric loss tangent (0.008) with good mechanical and thermal performance, suggesting possible use as high-temperature structural/functional materials.     

SiC-based ceramics with remarkable electrical conductivity prepared by ultrafast high-temperature sintering

SiC-based ceramics with high electrical conductivity are applied widely as electrode materials and semiconductor materials. In this study, a SiC-based ceramic with relative density of 96% was prepared by ultrafast high-temperature sintering (UHS) at 2000 ℃ (with a heating rate of 1000 ℃/min) for 40 s. The resistivity of as UHS-ed SiC-based ceramic was 1/15 of that prepared by the pressureless sintering. We found that the components of as-sintered body (SiC, Si and Y₃Si₅) by UHS were different from those (SiC and YAG) prepared by the pressureless sintering. The reason for the remarkable increase of the electrical conductivity of UHS-ed body was that the Si with higher electrical conductivity than SiC had emerged. Besides, the reaction mechanism was proposed and the unusual composition of the SiC-based ceramic sintered by UHS may also provide new reference for the application of SiC in specific fields.     

Radio‐frequency negative permittivity in the graphene/silicon nitride composites prepared by spark plasma sintering

Graphene/silicon nitride (GR/Si₃N₄) ceramic composites with uniformly dispersed GR sheets were prepared using spark plasma sintering. The effects of GR content on the microstructure and electrical properties of the composites were investigated in detail. With the GR content rising, the conductive GR network was formed in the composites, leading to the appearance of a percolation phenomenon, and the conductive mechanism also changed from hopping conductivity to metal‐like conductivity. When the GR content reached the percolation threshold, the composites showed a negative permittivity behavior, which resulted from the low frequency plasmonic state generated by the formative conducting GR networks. The increasing GR content resulted in a higher plasma frequency and larger magnitude of negative permittivity, which was consistent with the analysis of Drude model. A relatively high dielectric loss was observed in the composites and mainly induced by the high leakage current among GR sheets. Our work is beneficial to expound the regulation mechanism of negative permittivity, and the obtained ceramic composites present some potential applications in microwave absorption, shielding and capacitors.     

Low temperature pressureless sintering of dense silicon nitride using BaO-Al2O3-SiO2 glass as sintering aid

Dense Si₃N₄ ceramic with BaO-Al₂O₃-SiO₂ low temperature glass powders as sintering aids were prepared by pressureless sintering techniques at a relatively low temperature (1550 °C). Four kinds of glass powders of compositions melting at 1120 °C, 1300 °C, 1400 °C and 1500 °C, respectively, have been introduced as sintering aids. XRD results demonstrate that the BaO-Al₂O₃-SiO₂ glass powders reacted with BaAl₂O₄ and converted into hexagonal celsian, which is a high-temperature phase with melting point of 1760 °C, so being beneficial to the high temperature properties of the materials. In addition, a portion of α-Si₃N₄ transformed to rod like β-Si₃N₄ with high aspect ratio as shown by XRD and SEM analysis. The bulk density increased with the rise of the melting temperature of the BaO-Al₂O₃-SiO₂ glass powders, the sample obtained with the BaO-Al₂O₃-SiO₂ glass powder melting at 1500 °C reaching a maximum density of 98.8%, an high flexural strength (373 MPa) and a fracture toughness (4.8 MPa m^1/2).     

Electric current assisted sintering of AlN ceramics: thermal conductivity and transparency

Abstract

Densification, thermal conductivity and transparency of aluminium nitride ceramics densified by electric current assisted sintering are reviewed. Aluminium nitride powders could be densified without any sintering additives by electric current assisted sintering. Sintering additives, Y₂O₃ or CaF₂, and others are effective for densification, increase in thermal conductivity and transparency. As a result of the reaction with the sintering additives and oxide on the surface of the AlN powder, a secondary phase forms between AlN grains, oxygen impurity between aluminium nitride grains decreases and thermal conductivity increases. These mechanisms are effective in the sintering of aluminium nitride ceramics densified by electric current assisted sintering, though sintering time is short, within 5 min. The secondary phase formation does not always give good effect for transparency.