化学机械抛光中Co/Ti电偶腐蚀与去除速率选择性研究

通过电化学测试研究了pH、配位剂(柠檬酸钾)和缓蚀剂[包括1,2,4-三氮唑(TAZ)和3-氨基-5-巯基-1,2,4-三氮唑(AMTA)]对Co/Ti电偶腐蚀的影响.结果表明,溶液pH升高会增大Co与Ti之间的腐蚀电位差.当pH=8时,加入0.5％(质量分数)柠檬酸钾会加剧Co和Ti之间的电偶腐蚀,而再加入缓蚀剂TA...     

硅片化学机械抛光表面材料去除非均匀性实验

化学机械抛光技术已成为超大规模集成电路制造中实现硅片全局平面化的实用技术和核心技术。CMP的最大问题之一是硅片材料去除的非均匀性,它是集成电路对硅片表面平坦化需求的一个重要指标。文章提出了硅片表面材料去除非均匀性计算公式,在CP-4实验用抛光机上进行了硅片化学机械抛光实验,并用美国ADE公司生产的WaferCheck-7200型非接触式电容厚度测量设备对单晶硅片的厚度进行高精度检测,经过计算,得出了不同抛光速度下硅片表面材料去除非均匀性的数据,为理解硅片CMP材料去除非均匀性形成机理,进一步揭示硅片CMP材料去除机理提供了理论依据。     

抛光液组分对3D微同轴中铜和光刻胶化学机械抛光速率选择性的影响

研究了碱性抛光液的pH、SiO₂磨料质量分数、H₂O₂体积分数和甘氨酸质量分数对3D微同轴加工中铜和光刻胶化学机械抛光(CMP)去除速率的影响,得到较佳的抛光液组成为：SiO₂ 5%,H₂O₂ 20 mL/L,甘氨酸2.5%,pH=10。采用该抛光液时,铜和光刻胶的去除速率非常接近,满足3D微同轴加工对铜和光刻胶CMP去除速率选择性的要求。     

Influence of chemical polishing on fluorophosphate fiber preform

Surface treatment of optical glass fibers is an effective method to clean the impurities and remove the damage layer, such as scratches caused by the cold processing. Optical losses at the fiber core/cladding interface can thereby be decreased. Using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), we studied the surface composition and morphology of fluorophosphate (FP) glass after polishing and chemical etching. In addition, we investigated the etching mechanism and the optimal concentration of etching solution. Results show that the surface composition is very close to that of the bulk glass for some elements, and the root-mean-square (RMS) roughness is approximately 0.821 nm. A method including acid–alkali pretreatment and a second polishing step is a novel way to improve the smoothness of surface and to eliminate defects such as contaminants and scratches.     

Estimation of the minimum material removal thickness during the polishing process of ceramic tiles by laser triangulation

The possibility of controlling the thickness to be removed from each tile during the honing/polishing process of ceramic tiles would avoid unnecessary wear of the abrasive tools, directly minimizing energy and water consumptions. Such technology requires a conveyer belt capable of adjusting the height of the tile surface, together with a measuring system to estimate the most recommendable removal depth for each tile. While the former requirement is still not promptly available in the market, the on-line characterization of the geometrical characteristics of the tiles could be theoretically performed by many techniques. In this context, this study presents the 3D micro-inspection by laser triangulation as a promising technique to be employed at the production line prior to the honing process. To verify this hypothesis, six types of surfaces with different compositions were characterized in terms of 3D topography, waviness profiles, and surface roughness. The results indicate that the methodology adopted in this study is able to provide precise information regarding the minimum layer to be individually removed from the tile surfaces. In addition, it was also observed a relationship between the surface waviness and the tile composition. In contrast to the value of ca. 10% typically adopted in most ceramic industries, for the surfaces considered in this study, the minimum removal layers were found to be between 1.08% and 2.37% of the initial thickness.     

焦磷酸钾和双氧水对化学机械抛光中铜/钴电偶腐蚀及去除速率的影响

通过电化学测试和化学机械抛光(CMP)试验研究了pH=10的抛光液中焦磷酸钾和双氧水的质量分数对Cu/Co电偶腐蚀的影响。结果表明,适量K₄P₂O₇和H₂O₂的存在能够有效减小Cu与Co之间的腐蚀电位差,最小可降至11 mV。采用由0.3%H₂O₂、0.1%K₄P₂O₇和2%硅溶胶组成的抛光液进行化学机械抛光时,Cu、Co的去除速率分别为312.0?/min和475.6?/min。     

Influence of heat treatment on the space charge within an epoxy resin polymer material

The influence of heat treatment on the appearance and the evolution of the space charge repartition within an epoxy resin polymer material is investigated. The space charge measurements were made using the thermal step method (TSM) and the thermally stimulated depolarization currents (TSDC) method. The results obtained show the behaviour of the space charge density after heat treatment and, in particular, it can be concluded that the charges are stabilized in deep levels. © 2001 Society of Chemical Industry     

化学机械抛光技术研究进展

通过回顾化学机械抛光技术的发展历史,概述了化学机械抛光作用机制与实际应用情况,着重阐述了几种重要抛光浆料(如CeO2、SiO2、Al2O3抛光浆料)的优缺点、抛光机理及其国内外新近制备方法,进一步展望了化学机械抛光技术的发展前景与新型抛光浆料的开发方向.     

Material removal mechanisms in electrochemical-mechanical polishing of tantalum

Material removal mechanisms in tantalum chemical-mechanical polishing (CMP) and electrochemical-mechanical polishing (ECMP) were investigated using the single frequency electrochemical impedance spectroscopy (EIS). Through measuring the impedance of the tantalum surface, the single frequency EIS scan made it possible to observe the CMP and ECMP processes in situ. The impedance results presented competing mechanisms of removal and formation of a surface oxide layer of tantalum. Analysis indicated that the thickness of the oxide layer formed during polishing was related to the mechanical power correlated to the friction force and the rotating speed. Furthermore, the rate of growth and removal of the oxide film was a function of the mechanical power. This understanding is beneficial for optimization of CMP and ECMP processes.     

碳化硅化学机械抛光中金刚石磨粒与二氧化硅磨粒作用的微观模拟分析

采用反应力场(ReaxFF)分子动力学方法模拟分别以金刚石磨粒和二氧化硅磨粒对碳化硅进行化学机械抛光时的表面微观行为,探讨了这2种硬度不同的磨粒对碳化硅表面原子的去除机制.结果表明,二氧化硅磨粒在抛光过程中相比金刚石磨粒更容易发生化学反应,主要通过持续与碳化硅表面原子成键和断键来实现原子的去除.金刚石磨粒能够使碳化硅表...     

Electrostatic charge of filamentary material

The results of studies of the electrostatic charge (EC) in fibres from a polymer melt in the form of a charge distribution curve over the length of the spun fibre are reported and the factors that cause it to arise are noted. A thin air jet not only stabilizes the position of the spun fibre from the effect of EC but also increases the quality indexes of the commercial fibre. The presence of EC in the fibre complicates the performance and decreases the technical characteristics of automated measuring instruments.Translated from Khimicheskie Volokna, No. 5, pp. 56–58, September–October, 2004.