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1.
Low-permittivity Ca1−xSrxSnSiO5 (0 ≤ x ≤ 0.45) microwave dielectric ceramics were prepared via traditional state-reaction at 1400°C-1450°C for 5 hours. Moreover the microwave dielectric properties of SnO2 ceramic were obtained for the first time. SnO2 ceramic was difficult to densify, and SnO2 ceramic (ρrel = 65.1%) that was sintered at 1525°C exhibited the optimal microwave dielectric properties of εr = 5.27, Q × f = 89 300 GHz (at 14.5 GHz), and τf = −26.7 ppm/°C. For Ca1−xSrxSnSiO5 (0 ≤ x ≤ 0.15) ceramics, Sr2+ could be dissolved in the Ca2+ site of Ca1−xSrxSnSiO5 to form a single phase, and the partial substitution of Ca2+ by Sr2+ could improve the microwave dielectric properties of CaSnSiO5 ceramic. Secondary phases (SnO2 and SrSiO3) appeared at 0.2 ≤ x ≤ 0.45 and could adjust the abnormally positive τf value of CaSnSiO5 ceramic. The highest Q × f value (60 100 GHz at 10.4 GHz) and optimal microwave dielectric properties (εr = 9.42, Q × f = 47 500 GHz at 12.4 GHz, and τf = −1.2 ppm/°C) of Ca1−xSrxSnSiO5 ceramics were obtained at x = 0.05 and 0.45, respectively.  相似文献   

2.
Here we report a new high-Q × f and temperature-stable oxyfluoride microwave dielectric ceramic system of Li2+xZrO3Fx (0 ≤ x ≤ 1.25) sintered at low temperatures (i.e., ≤950°C). The sintering characteristics, phase assemblage, microstructures, and microwave dielectric properties (MDPs) of the Li2+xZrO3Fx specimens were studied. The chemical bond theory calculations were employed to analyze the compositional dependence of the MDPs in the Li2+xZrO3Fx ceramic system. The optimal MDPs of εr = 15.8, Q × f = 65 100 GHz, and τf = 1.2 ppm/°C were achieved in the sample with x = 1. Besides, the ceramic samples exhibited high chemical compatibility with Ag electrodes. Therefore, the novel ceramic system of Li2+xZrO3Fx is confirmed to be a promising candidate as a low-temperature co-fired ceramic material.  相似文献   

3.
《Ceramics International》2022,48(24):36433-36440
Microwave dielectric ceramics with simple composition, a low permittivity (εr), high quality factor (Q × f) and temperature stability, specifically in the ultrawide temperature range, are vital for millimetre-wave communication. Hence, in this study, the improvements in sintering behavior and microwave dielectric properties of the SnO2 ceramic with a porous microstructure were investigated. The relative density of the Sn1-xTixO2 ceramic (65.1%) was improved to 98.8%, and the optimal sintering temperature of Sn1-xTixO2 ceramics reduced from 1525 °C to 1325 °C when Sn4+ was substituted with Ti4+. Furthermore, the εr of Sn1-xTixO2 (0 ≤ x ≤ 1.0) ceramics increased gradually with the rise in x, which can be ascribed to the increase in ionic polarisability and rattling effects of (Sn1-xTix)4+. The intrinsic dielectric loss was mainly controlled by rc (Sn/Ti–O), and the negative τf of the SnO2 ceramic was optimised to near zero (x = 0.1) by the Ti4+ substitution for Sn4+. This study also explored the ideal microwave dielectric properties (εr = 13.7, Q × f = 40,700 GHz at 9.9 GHz, and τf = ?7.2 ppm/°C) of the Sn0.9Ti0.1O2 ceramic. Its optimal sintering temperature was decreased to 950 °C when the sintering aids (ZnO–B2O3 glass and LiF) were introduced. The Sn0.9Ti0.1O2-5 wt% LiF ceramic also exhibited excellent microwave dielectric properties (εr = 12.8, Q × f = 23,000 GHz at 10.5 GHz, and τf = ?17.1 ppm/°C). At the ultrawide temperature range (?150 °C to +125 °C), the τε of the Sn0.9Ti0.1O2-5 wt% LiF ceramic was +13.3 ppm/°C, indicating excellent temperature stability. The good chemical compatibility of the Sn0.9Ti0.1O2-5 wt% LiF ceramic and the Ag electrode demonstrates their potential application for millimetre-wave communication.  相似文献   

4.
In the (Bi1 − xCex)VO4 (0 ≤ x ≤ 1) system, we found that the (Bi1 − xCex)VO4 (0 ≤ x ≤ 0.1) belongs to the monoclinic scheelite phase and the (Bi1 − xCex)VO4 (0.7 ≤ x ≤ 1) belongs to the tetragonal zircon phase, while the (Bi1 − xCex)VO4 (0.1 < x < 0.7) belongs to the mixed phases of both monoclinic scheelite and tetragonal zircon structure. Interestingly, two components with near-zero temperature coefficient of resonant frequency (TCF) appeared in this system. In our previous work, a near-zero TCF of ~+15 ppm/°C was obtained in a (Bi0.75Ce0.25)VO4 ceramic with a permittivity (εr) of ~47.9 and a Qf (Q = quality factor = 1/dielectric loss; f = resonant frequency) value of ~18 000 GHz (at 7.6 GHz). Furthermore, in the present work, another temperature-stable microwave dielectric ceramic was obtained in (Bi0.05Ce0.95)VO4 composition sintered at 950°C and exhibits good microwave dielectric properties with a εr of ~11.9, a Qf of ~22 360 GHz (at 10.6 GHz), and a near-zero TCF of ~+6.6 ppm/°C. The results indicate that this system might be an interesting candidate for microwave device applications.  相似文献   

5.
Ca3SnSi2-xGexO9 (0 ≤ x ≤ 0.8) and (1–y) Ca3SnSi1.6Ge0.4O9 – y CaSnSiO5 – 2 wt% LiF (y = 0.4 and 0.5) microwave dielectric ceramics were prepared by traditional solid-state reaction through sintering at 1250°C–1425°C for 5 h and at 875°C for 2 h, respectively. Ge4+ replaced Si4+, and Ca3SnSi2-xGexO9 (0 ≤ x ≤ 0.4) solid solutions were obtained. At 0.1 ≤ x ≤ 0.4, the Ge4+ substitution for Si4+ decreased the sintering temperature of Ca3SnSi2-xGexO9 from 1425 to 1300°C, the SnO6 octahedral distortions, and the average CaO7 decahedral distortions, which affected the τf value. The large average decahedral distortions corresponded with nearer-zero τf values at Ca3SnSi2-xGexO9 (0.1 ≤ x ≤ 0.4) ceramics. The τf value and sintering temperature of Ca3SnSi2-xGexO9 (x = 0.4) ceramic were adjusted to near-zero by CaSnSiO5 and decreased to 875°C upon the addition of 2 wt% LiF. The (1 – y) Ca3SnSi1.6Ge0.4O9 – y CaSnSiO5 – 2 wt% LiF (y = 0.5) ceramic sintered at 875°C for 2 h exhibited good microwave dielectric properties: εr = 10.3, Q × = 14 300 GHz (at 12.2 GHz), and τf = ‒5.8 ppm/°C.  相似文献   

6.
The CaMoO4xY2O3xLi2O ceramics were prepared by the solid‐state reaction method. The sintering behavior, phase evolution, microstructure, and microwave dielectric properties were investigated. CaMoO4 solid solution was obtained when x = 0.030, and two‐phase system including tetragonal CaMoO4 phase and cubic Y2O3 phase formed when 0.066 ≤ x ≤ 1.417. A temperature stable CaMoO4‐based microwave dielectric ceramic with ultralow sintering temperature (775°C) was obtained in the CaMoO4xY2O3xLi2O system when x = 0.306, which showed good microwave dielectric properties with a low permittivity of 9.5, a high Qf value of 63 240 GHz, and a near‐zero temperature coefficient of resonant frequency of +7.2 ppm/°C.  相似文献   

7.
《Ceramics International》2022,48(10):13780-13793
In this work, Bi3+ doped Ba0.98-3x/2BixCa0.02Zr0.02Ti0.976Cu0.008O3 [0 ≤ x ≤ 0.03] lead free ceramics, to be employed for structural, dielectric and ferroelectric studies, have been synthesized via conventional solid state reaction method. Rietveld refinement of the X-ray diffraction (XRD) data evidences the existence of a pure perovskite phase with tetragonal symmetry for all ceramics. The Scanning Electron Microscopy (SEM) reveals that the grain size, which is 16.14 μm for x = 0 reduced to 2.11 μm for x = 0.03. Dielectric studies demonstrate excellent dielectric behavior with high Curie temperature (TC ~159 °C), high dielectric constant (εr ~834, εmax ~ 3146), and a low dielectric loss (tanδ ~ 0.019), for an optimum value of x = 0.02. The analysis of temperature coefficient of the dielectric permittivity indicates the applicability of these materials in multilayer ceramic capacitors. Impedance studies, conducted to understand the underlying physical mechanisms, are found to be in good agreement with the results of structural and dielectric studies. Furthermore, the ferroelectric measurement confirms the ferroelectric nature for all samples with an energy storage efficiency (η) of ~42% for x = 0.02 composition.  相似文献   

8.
In this work, the effects of Cu composition on the thermal stability of the dielectric and nonlinear properties of CaCu3+xTi4O12 (?0.2 ≤ x ≤ 0.2) ceramics obtained via a polymer-pyrolysis chemical process were studied. The mean grain sizes of Cu-stoichiometric (x = 0), Cu-deficient (x < 0) and Cu-excess (x > 0) CaCu3+xTi4O12 ceramics were found to be ~3.2, ~3.4 and ~3.7 μm, respectively. Interestingly, very good dielectric properties (0.020 ≤ tanδ ≤ 0.038 and 4000 ≤ ε′ ≤ 7065) were attained in CaCu3+xTi4O12 (?0.2 ≤ x ≤ 0.1, excluding x = 0.2) ceramics. Moreover, the variation of dielectric constant (ε′) within a limit of ±15% (Δε± 15%) over a wide temperature range (TR) of ?70 – 220 °C with low tanδ < 0.05 (tanδ<0.05) over a TR of ?70 to 80 °C were achieved in a CaCu2.8Ti4O12 ceramic. These results suggest that this ceramic could be applicable for X9R capacitors and energy storage devices that require high thermal stability. Additionally, the nonlinear properties of Cu-nonstoichiometric ceramics could be improved when compared with those of the Cu-stoichiometric material. The incremental changes of dielectric and nonlinear properties of CaCu3+xTi4O12 (?0.2 ≤ x ≤ 0.2) ceramics revealed the significant role of Cu composition on grain boundary resistance (Rgb), which was confirmed by impedance spectroscopy analysis. In addition, XANES results revealed the proper ratios of Cu+:Cu2+ and Ti3+:Ti4+ found in these ceramics, indicating the semiconducting behavior of these grains.  相似文献   

9.
Ca1+2xSnSi2x+yO3+6x+2y (0.1 ≤ x ≤ 0.9; 0.1 ≤ y ≤ 0.9) microwave dielectric ceramics were prepared through traditional solid-state reaction sintered at 1450°C–1500°C for 5 hours. The Ca3SnSi2O9 second phase replaced the SnO2 second phase of the Ca1+2xSnSi2xO3+6x (x = 0, y = 0) ceramics by controlling the ratio of Ca:Sn:Si. The cracks of CaSnO3 (x = 0, y = 0) ceramic were inhibited, the microwave dielectric properties were optimized by introducing the Ca3SnSi2O9 second phase, and the CaSnO3-Ca3SnSi2O9 mixture system existed at (0.1 ≤ x ≤ 0.9, y = 0). The CaSnSiO5 phase with positive τf value was related to the Si-rich in CaSnSiyO3+2y (x = 0; 0.1 ≤ y ≤ 0.9), and the coexistence of three and four phases was obtained at CaSnSiyO3+2y (0.1 ≤ y ≤ 0.9) ceramics. The CaSnSiO5 phase appeared at CaSnSiyO3+2y (0.3 ≤ y ≤ 0.9) ceramics. The CaSnSiyO3+2y (y = 0.8) ceramic with 49.2 wt% CaSnSiO5 phase exhibited excellent microwave dielectric properties: εr = 11.06, Q × f = 57,500 GHz (at 11.5 GHz), and τf = +8.1 ppm/°C.  相似文献   

10.
A novel Zn1-xCoxMoO4 (ZCMO) (x = 0.03) ceramic with low-dielectric constant, low-loss, and low-sintering temperature for 5G electromagnetic beam splitting is developed by solid-state reaction method. This ceramic exhibits excellent microwave dielectric properties with εr = 8.0, Q × f = 57682 GHz, τf = ? 54.9 ppm/°C at a sintering temperature of 825 °C. An array antenna for electromagnetic beam splitting at 5.4 GHz is designed by using this ceramic for the first time. The highest efficiency and the best electromagnetic beam splitting effect can be jointly controlled by the dielectric constant and dielectric loss of the ceramic. The normalized reflection amplitude of each array unit cell is above 98 %, and the reflection phase covers 360°. The function of electromagnetic beam splitting is verified by the far-field pattern of the electric field. This work helps to promote the development of LTCC and broaden the application scope of microwave dielectric ceramics.  相似文献   

11.
In this work, (1 − x)(0.94Na0.5Bi0.5TiO3–0.06BaTiO3)–xKTaO3 (x = 0–0.30) ceramics are developed for dielectric capacitor applications. The introduction of KTaO3 from x = 0 to 0.30 increases the tolerance factor t from 0.984 to 1.005 and causes the decrease of ferroelectric rhombohedral phase in the ceramics. Besides, a gradual structural change toward a higher symmetry can be detected, accompanied by the obvious domain refinement. In the aspect of electrical property, the strengthened dielectric relaxation leads to the greatly enhanced thermal stability of dielectric response. The decline in Ts from 98 to −96°C causes a significant widening of the low-temperature region with temperature-stable dielectric constant εr and low dielectric loss tan δ. The x = 0.30 ceramic shows a high εr (25°C) of 1094 with the temperature coefficient of capacitance ≤±15% over −70 to 200°C, which exceeds the X9R standard. Meanwhile, tan δ is less than 0.02 in a wide temperature range of −35 to 300°C. In addition, the ultrafine grain size of 290 nm, large bandgap of 3.22 eV, and high resistance of the x = 0.30 ceramic contribute to its electrical breakdown strength. A linear-like PE loop with the large discharged energy density WD ∼ 3.50 J/cm3 and high energy efficiency η ∼ 90.1% is obtained under 28 kV/mm at room temperature. The thermal stability of the energy storage performance is also satisfactory with the variation of WD less than 15% over −40 to 200°C, and the η is higher than 85%.  相似文献   

12.
13.
In this study, Y3−xLaxAl5O12 (0 ≤ x ≤ 0.09) ceramics were synthesized, and the phase composition, lattice evolution, and microwave dielectric properties were investigated in detail. Scanning electron microscopy confirms that the addition of moderate amounts of La2O3 improves the grain development of YAG ceramics, but excessive doping destabilizes the crystal structure. Transmission electron microscopy characterization shows that the variation of the dielectric properties of the samples with x-value is related to the occurrence of benign dislocation structures caused by modifications in the type and content of the A-site rare-earth ions. The variations in relative density, dielectric constant, and quality factor remain basically coordinated. The optimum microwave dielectric properties of La3+ doped YAG samples are exhibited as εr = 10.61, Q × f = 187, 542 GHz, τf = −31.2 ppm/°C when La2O3 is doped at x = 0.015.  相似文献   

14.
The structures, Curie temperature, dielectric relaxor behaviors, ferroelectricity, ferromagnetism, and magnetocapacitance of the (1?x)Ba0.70Ca0.30TiO3xBiFeO3 [(1?x)BCT–xBF, x = 0–0.90] solid solutions have been systematically investigated. The ceramics have coexisted tetragonal (T) and orthorhombic (O) phases when x ≤ 0.06, coexisted pseudocubic (PC) and O phases when x = 0.065, coexisted cubic and O phases when 0.07 ≤  0.12, PC phase when 0.21 ≤  0.42, coexisted T and rhombohedral (R) phases when 0.52 ≤  0.70, and R phase when  0.75. Significantly, composition‐dependent microstructures and Curie temperature are observed, the average grain size increases from 1.9 μm for = 0, reaches 12.0 μm for = 0.67, and then decreases to 1.3 μm for = 0.90. At room temperature, the ceramics with = 0.42–0.70 show piezoelectric properties and multiferroic behaviors, characterized by the polarization‐electric field, polarization current intensity–electric field, and magnetization–magnetic field curves, the composition with = 0.67 has maximum polarization, remnant polarization, maximum magnetization, and remnant magnetization of 15.0 μC/cm2, 9.1 μC/cm2, 0.33 emu/g, and 0.14 emu/g, respectively. In addition, the magnetocapacitance is evidenced by the increased relative dielectric constant with increasing the applied magnetic field (H). With ΔH = 8 kOe, the composition with = 0.67 shows the largest values of (εr(H) ? εr(0))/εr(0) = 2.96% at room temperature. The structure–property relationship is discussed intensively.  相似文献   

15.
Complex pyrophosphates compounds have attracted much attention as promising candidates for substrate applications. In the work, a low-permittivity BaZnP2O7 ceramic was synthesized through solid-state reaction. The pure phase BaZnP2O7 was crystallized in the triclinic P−1 space group. Excellent microwave dielectric properties of the BaZnP2O7 ceramic with εr = 8.23, Qf = 56170 GHz, and τf = −28.7 ppm/°C were obtained at 870°C for 4 h. The substitution of Mg2+ for Zn2+ was found to have positive effects on grain morphology and dielectric properties. Optimized performance of εr = 8.21, Qf = 84760 GHz, and τf = −21.9 ppm/°C was yielded at 900°C for the BaZn0.98Mg0.02P2O7 ceramic. Intrinsic dielectric properties of BaZn1-xMgxP2O7 ceramics were studied via Clausius–Mossotti equation and complex chemical bond theory.  相似文献   

16.
《Ceramics International》2022,48(21):31528-31536
In this work, a new Zn1-xNixMoO4 (ZNMO) (x = 0.03) ceramic with low-dielectric constant, low-loss, and low-sintering temperature for X-band two-dimensional (2D) beam splitting is developed by solid-state reaction method. This ceramic has excellent microwave dielectric properties of εr = 8.5, Q × f = 28192 GHz, τf = ?60.2 ppm/°C. The effects of Ni2+ substitution on the microwave dielectric properties of the ZnMoO4 ceramic are studied in detail through crystal structure analysis, Raman spectroscopy, and first-principles calculations. For the first time, an array antenna for X-band 2D electromagnetic beam splitting is designed by using this ceramic as a substrate. The effects of the dielectric constant and dielectric loss on the radiation efficiency of the array antenna are revealed. The normalized reflection amplitude and reflection phase of the unit cell exceed 0.97 and cover 360°, respectively. The function of 2D electromagnetic beam splitting is verified by the overall far-field pattern of the array antenna. This work has the opportunity to promote the development of LTCC and microwave dielectric ceramics.  相似文献   

17.
Phase composition, morphology, and microwave dielectric properties of (1−x) LiAl0.98(Zn0.5Si0.5)0.02O2 + x CaTiO3 (0.05 ≤ x ≤ 0.20) materials synthesized via the solid state reaction method were investigated. All these densified materials were obtained at a sintering temperature of 1150°C. All compositions showed a major LiAlO2 phase that was accompanied by a minor CaTiO3 phase. The εr value increased gradually from 10.88 to 11.60, whereas the Q × f value remarkably decreased from 33 251 GHz to 13 511 GHz. The τf value changes from −85 ppm/°C to 212 ppm/°C, thereby indicating that CaTiO3 could effectively adjust this value. HBO3-doping was used to further decrease the sintering temperature to 900°C. The optimum value was obtained at 7 wt.% HBO3 doped with microwave dielectric properties of εr = 9.39, × f = 10 224 GHz, and τf = −7.8 ppm/°C. This material also exhibited chemical compatibility with silver, making it a candidate for low temperature co-fired ceramics applications.  相似文献   

18.
In the present work, Bi3+ was used to substitute for Nd3+ in the NdNbO4 ceramic and pure fergusonite solid solution was formed within 20 mol. % substitutions. Microwave dielectric permittivity of the (Nd1-xBix)NbO4 (x ≤ 0.2) ceramics increased linearly with x value due to the larger ionic polarizability of Bi3+ than Nd3+. Excellent microwave dielectric properties with a permittivity (εr) ~22.5, a Qf (Q = quality factor, f = resonant frequency) ~50 000 GHz, and a TCF ~−9 ppm/°C were obtained in the (Nd0.9Bi0.1)NbO4 ceramic. This method might work in other fergusonite-type rare-earth ortho-niobates.  相似文献   

19.
《Ceramics International》2021,47(22):31732-31739
The microwave dielectric properties of spinel-structured Li(Mg0.5Ti0.5)xGa5−xO8 (0 ≤ x ≤ 1) ceramics were researched together with their microstructures. The X-ray diffraction and Raman spectroscopic revealed that an ordered spinel structure in 1: 3 B-site ordering with space group P4332 was formed in the composition range of 0 = x ≤ 0.25, and a disordered spinel with space group Fd-3m was formed in 0.5 = x ≤ 1. All the ceramics were compact with uniform grain, clear grain boundaries and high relative density (ρrelative ≥ 95 %). With the substitution of [Mg0.5Ti0.5]3+ for Ga3+ increased, the dielectric constant (εr) increased from 10.48 to 11.28, which was related to the increased molar ionic polarizability (αtheo/Vm) and B-site bond ionicity. The temperature coefficient of the resonant frequency (τf) slightly increased from −66.27 ppm/°C to −61.45 ppm/°C, due to the decrease of B-site bond valence. The Q × f value firstly decreased from 125,400 GHz to 50,381 GHz and then increased to 85,360 GHz, which was affected by the intrinsic loss analyzed by lattice energy. The optimal microwave dielectric properties were obtained for LiMg0.5Ti0.5Ga4O8 ceramic (x = 1) sintered at 1260 °C with εr = 11.28, Q × f = 85,360 GHz and τf = −61.45 ppm/°C.  相似文献   

20.
Herein, Li1+xMg0.5Ti0.5O2 (0.000 ≤ x ≤ 0.075) ceramics with excess lithium were prepared by solid-state reaction method to compensate for lithium volatilization, thus optimizing dielectric properties. The second phase Mg2TiO4 decreases with excess lithium content and eventually disappears at x = 0.05. Of these, Li1.0375Mg0.5Ti0.5O2 illustrates the best dielectric properties with εr = 16.58, Q × f = 120712 GHz (@9.18 GHz), and τf = −16.31 ppm/°C. From the point of view of non-intrinsic factors, excess lithium at optimum ratios slightly facilitates the sintering of the ceramics, improves densification, and increases the grain size, resulting in improved dielectric properties. For intrinsic factors, a slight increase in bond ionicity results in a slight improvement in εr. First-principles calculations demonstrate that suitable excess lithium increases electron cloud density in the internal space of Li/Mg/TiO6 octahedron and increases band gap, thus optimizing the dielectric properties. The same results were obtained from the perspective of lattice vibrations. The modified Li1.0375Mg0.5Ti0.5O2 ceramics offer great potential for future microwave communication technology.  相似文献   

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