成型压力对钛酸锶陶瓷电容器介电性能的影响

研究了不同的成型压力对钛酸锶陶瓷电容器介电性能的影响。借助扫描电镜和宽频介电测试仪研究陶瓷的微观结构及其介电性能。实验结果表明,当成型压力从5 MPa增加到6 MPa时,坯体的密度突然增大,6 MPa以后密度增加缓慢;1380℃烧结后,成型压力为6 MPa时试样的介电性能最佳。     

掺杂对钛酸锶钡陶瓷介电性能的影响

综述了国内外近几年来钛酸锶钡陶瓷(BST)掺杂改性技术的发展状况,从3个方面阐述了不同掺杂材料对BST陶瓷介电性能的影响,论述了掺杂材料的组成、制备及其优缺点.提出了掺杂改性研究中存在的一些问题,并对未来的研究方向作出了展望.     

钛酸锶陶瓷烧结的研究进展

钛酸锶陶瓷电容具有高储能、低损耗、高稳定性等优点,但烧结温度高,烧成密度低.依据国内外钛酸锶陶瓷烧结的研究情况,综述了影响钛酸锶陶瓷烧结中的两大因素,即烧结工艺和烧结助剂等方面的研究进展,并对其进行了展望.     

BCB对CSLLT陶瓷的烧结及介电性能的影响

在CaO-SrO-Li2O-Sm2O3-Nd2O3-TiO2(简称CSLLT)陶瓷中加入BaCu(B2O5)(简称BCB),研究了BCB对CSLLT陶瓷的烧结特性和介电性能的影响。结果表明:随BCB的添加,CSLLT陶瓷的烧结温度逐渐下降,并且具有高介电常数。其中,添加10?B后的CSLLT陶瓷其烧结温度从1 300℃显著下降到1 050℃,且在微波频率下具有如下介电性能:ε=77.3、Qf=4 735 GHz;τf=-48.1×10-6/℃(1 MHz)。     

二氧化硅改性热固性聚酰亚胺介电性能研究

以甲基三乙氧基硅烷为无机前驱体制取二氧化硅,并合成了二氧化硅改性热固性聚酰亚胺复合材料。利用美国Agilent4294A型精密介电频谱仪测定材料的介电常数（ε）和介质损耗因数（tanδ）,用自制的耐电晕测试设备测试了耐电晕时间,采用CS2674C配套耐压测试仪测试了其介电强度,以及漆膜附着力。结果表明,随着无机二氧化硅掺杂量的增加,介电常数和介质损耗因数都呈上升趋势,介电强度均高于有机硅浸渍漆标准（JB/T 3078-1999）;当二氧化硅掺杂4%时,耐电晕时间为36.8 h,是掺杂前的7.3倍,附着力良好,为一级。     

聚苯胺导电聚合物的介电性能研究

本文从合成条件、掺杂剂、掺杂条件等不同角度出发,研究了聚苯胺的电导率变化规律,并对其介电特性进行了初步的测试分析。     

文石型碳酸钙晶须及其复合体系介电性能的研究

研究了文石型碳酸钙晶须、轻质碳酸钙、钛酸钾晶须须及其填充聚丙烯（PP）和高密度聚乙烯（HDPE）复合体系的介电性能。粉体介电性能的测试采用了TR－10型电桥的粉末电极系统,复合体系介电性能的测量是将其制成片状试样后利用三电极系统进行的。通过实验表现,钛酸钾晶须由于晶体结构的不同而具有较损耗值。文石型碳酸钙晶须表面残留的MgCl2对介电性能有明显的影响,当使用去离子水将残留的MgCl2清除后,无论是粉体本身还是使用它的复合体系,介常数与介质损耗均有较大幅度的下降。     

聚合物／BaTiO3复合材料介电性能的研究

本文制备了聚合物／ＢａＴｉＯ３复合材料，研究了聚合物的分子链结构，极生，结晶度和ＢａＴｉＯ３粒子体积浓度对复合材料介电性能的影响，同时ＢａＴｉＯ３粒子的表面性质和界面层状态的影响也十分显著。     

低温烧结新型钛酸钡陶瓷复合材料的介电性能研究

为降低片式多层陶瓷电容器(MLCC)的成本,研究了适宜低温烧结的陶瓷复合材料配方。向钛酸钡中添加不同的无机填料,对浆料进行球磨,然后将研磨好的浆料进行压片,低温烧结,制备出适宜低温烧结的陶瓷复合材料,并对其形貌、强度、介电性能和工艺进行研究。结果表明:添加水玻璃和无机硅胶能使钛酸钡烧结后形成致密的片材强度大、硬度高、不易碎裂;而添加石墨和蒸馏水则不易形成稳定型片材,强度差;添加水玻璃可以使复合材料的介电常数显著增加,水玻璃的最佳添加量为3%。     

Processing Effects on the Microstructure and Dielectric Properties of Barium Strontium Titanate (BST) Ceramics

Barium Strontium Titanate (BST) ferroelectric thick films have been investigated as potential candidates for use in frequency agile microwave circuit devices. Powder processing techniques such as screen-printing have been used to make BST thick films. However, due to the interactions between the BST and substrates such as alumina, the sintering temperatures for the BST thick films are limited and the resultant films are difficult to achieve full densification. In this paper, the effects of different powder processing conditions (calcination, sintering temperature and time) on the sintering behaviour and dielectric properties of the BST ceramics have been investigated. The dielectric behaviour of the ceramics has been correlated with composition and microstructural features such as chemical homogeneity, grain size and domain wall movements.     

Dielectric and Pyroelectric Properties of Lead Zirconate Titanate Composite Films

A new sol-gel approach has been established to prepare dense and crack-free lead zirconate titanate (PZT)/PZT composite films. This new process combines the modified sol-gel method for preparing ceramic/ceramic composite films and the infiltration technique. In the modified sol-gel method, sintered PZT powder is dispersed in a PZT precursor solution to form a slurry which is then spin-coated on a substrate. However, the resulting composite film usually contains a considerable amount of pores, and thus resulting in serious degradation of the mechanical, ferroelectric and piezoelectric properties of the films. In the present work, an additional step, infiltration, has been included in the method. A diluted PZT precursor solution is deposited on the composite film to infiltrate and fill-up the pores, and hence a dense composite film is obtained. The dielectric, ferroelectric and pyroelectric properties of the resulting PZT/PZT composite film are comparable to those of a sol-gel derived PZT film; showing the values of 1200, 0.04, 21 μC/cm² and 180 μC/m² K for relative permittivity, dielectric loss, remanent polarization and pyroelectric coefficient, respectively.     

混料次序对钛酸钡介电性能的影响

通过改变混料的次序以及采用沉降、水煮损耗、温度特性、电导率和化学分析等测试手段,研究了制备钛酸钡的球磨工艺中混料次序对钛酸钡粉体均匀性及钛酸钡介电性能的影响。研究结果表明:采用不同的混料次序制得的钛酸钡性能差别较大,先钡后钛的方式较优,能减少球磨引起的团聚,极大地改善了固相合成BaTiO3粉体均匀性,提高了钛酸钡的介电性能。     

Dielectric Properties of Niobium and Lanthanum Doped Lead Barium Zirconate Titanate Relaxor Ferroelectrics

The lead barium zirconate titanate (PBZT) relaxor ferroelectrics are ideal for high voltage capacitor applications due to their high dielectric constant, stability under DC bias, and temperature stability. In this study the composition (Pb_0.65Ba_0.35)(Zr_0.70Ti_0.30)O₃ was selected as the base composition. It exhibited typical relaxor characteristics such as frequency dispersion and diffuse phase transition. The dielectric constant is 6000 at room temperature and remains almost constant under electric field as high as 20 kV/cm. To further enhance the dielectric properties, various amounts of niobium oxide and lanthanum oxide dopants were added to the base PBZT to alter the defect structure and hence the dielectric properties. It was found that the dielectric constant of 1% Nb-doped samples was increased by 20–25% while maintaining similar voltage stability. This increase was attributed to the abnormal grain growth in the Nb-doped sample, and the correlation between microstructure and dielectric constant was drawn through a grain size study. The La addition only caused a monotonic decrease of dielectric constant and slightly improved voltage stability.     

BaTi0.75Zr0.25O3陶瓷的低温烧结及介电性能研究

通过掺入不同含量的B2O3对BaTi0.75Zr0.25O3(BZT)陶瓷进行低温烧结,研究其对介电性能的影响,并采用X射线衍射进行物相分析。结果表明:掺杂B2O3的BZT陶瓷在1 150℃烧结温度下得到的主晶相均为钙钛矿,且不存在明显的杂相。观察试样的表面形貌,当B2O3掺杂量为0%～1.5%时,陶瓷晶粒尺寸逐渐变大,而掺杂量为1.5%～2.5%时,晶粒尺寸稍微变小。随着B2O3含量的增加,BZT陶瓷的介电常数降低,介质损耗略微增大。与未掺杂的BZT陶瓷相比,掺杂B2O3的BZT陶瓷的烧结温度下降了300℃,掺杂1.5%B2O3的BZT陶瓷的结构和介电性能较好。