宽带碲基掺铒光纤放大器掺杂特性的理论研究

对WDM系统中宽带碲基掺铒光纤放大器(EDTFA)多信道增益谱特性的研究表明,在给定泵浦方式、泵浦功率和光纤长度的工作条件下,碲基掺铒光纤中铒掺杂浓度对EDTFA各信道信号增益的影响并不相同,相比于长波长信道,短波长信道的信号增益随着光纤中铒掺杂浓度的提高更易趋于饱和及快速衰减状态,同时信号增益谱向长波长方向萎缩.     

WDM系统中EDFA饱和增益谱特性的实验研究

对ＷＤＭ光纤传输系统中ＥＤＦＡ的增益谱特性的研究表明：在饱和工作状态下，多个信道同时输入时各信道的增益低于相同总输入功率的单个信道的增益，且增益谱宽变窄，增益谱峰值随饱和程度的加深向长波长方向偏移。     

抽运饱和及信道问受激拉曼散射效应对反向抽运分布式光纤拉曼放大器增益谱的影响

在宽带密集波分复用(DWDM)系统中，后向抽运分布式光纤拉曼放大器(B-DFRA)会引入在小信号条件下无需考虑的两种效应：抽运饱和效应(PS)使拉曼增益减小；拉曼放大使信道间受激拉曼散射(SRS)效应增强，产生附加拉曼倾斜效应(ART)。将后向抽运分布式光纤拉曼放大器的增益谱分解为拉曼抽运的放大作用和信道间受激拉曼散射效应产生的倾斜作用，通过对各种工作条件下实际后向抽运分布式光纤拉曼放大器增益谱的优化计算，研究了抽运饱和效应和附加拉曼倾斜效应对后向抽运分布式光纤拉曼放大器增益谱的影响。计算发现抽运饱和效应取决于信道输出功率，附加拉曼倾斜效应由信道输入功率和输出功率共同决定，进而通过抽运饱和效应和附加拉曼倾斜效应的大小可以将后向抽运分布式光纤拉曼放大器的工作条件划分为三个区域，并讨论了不同工作条件下后向抽运分布式光纤拉曼放大器的简化分析方法。     

抽运饱和及信道间受激拉曼散射效应对反向抽运分布式光纤拉曼放大器增益谱的影响

在宽带密集波分复用 (DWDM )系统中 ,后向抽运分布式光纤拉曼放大器 (B DFRA)会引入在小信号条件下无需考虑的两种效应 :抽运饱和效应 (PS)使拉曼增益减小 ;拉曼放大使信道间受激拉曼散射 (SRS)效应增强 ,产生附加拉曼倾斜效应 (ART)。将后向抽运分布式光纤拉曼放大器的增益谱分解为拉曼抽运的放大作用和信道间受激拉曼散射效应产生的倾斜作用 ,通过对各种工作条件下实际后向抽运分布式光纤拉曼放大器增益谱的优化计算 ,研究了抽运饱和效应和附加拉曼倾斜效应对后向抽运分布式光纤拉曼放大器增益谱的影响。计算发现抽运饱和效应取决于信道输出功率 ,附加拉曼倾斜效应由信道输入功率和输出功率共同决定 ,进而通过抽运饱和效应和附加拉曼倾斜效应的大小可以将后向抽运分布式光纤拉曼放大器的工作条件划分为三个区域 ,并讨论了不同工作条件下后向抽运分布式光纤拉曼放大器的简化分析方法     

前向泵浦拉曼光纤放大器的性能研究

实现了前向两波长泵浦及3波长泵浦拉曼光纤放大器(RFA).实验中所用的信号为符合ITU T建议的C波段20信道波分复用信号,波长为1537.377～1560.605nm,信号传输距离分别为100和75km.其中,3波长泵浦的增益波动<1.47dB,所获得的最低光信噪比(OSNR)为32.5dB,优于同样条件下后向泵浦所获得的OSNR.详细研究了前向泵浦的增益饱和特性,实验结果表明,饱和功率随增益的增加而降低,且增加的增益加剧了增益饱和现象;对所研究的两泵浦配置前向泵浦放大器,饱和功率～5dBm.     

饱和非线性光纤正色散区的交叉相位调制不稳定性

在考虑到光纤饱和非线性效应的情况下,给出了同偏振、不同波长的两光波的慢变振幅满足的耦合非线性薛定谔方程组以及线性化后微扰满足的方程组。在光纤的正色散区,分析并讨论了交叉相位调制不稳定增益谱随两光波输入功率变化的规律。结果表明,与饱和非线性光纤中自相位调制不稳定性的增益谱类似,交叉相位调制不稳定增益谱的临界扰动频率、峰值增益大小随两光波输入功率的增大也呈现出先增大后减小的特点,而二者随两光波输入功率变化的快慢都与两扰动的频率大小有关,即会出现两个不同的输入功率对应同一个不稳定增益峰值和临界扰动频率的情形。     

两段级联宽带碲基掺铒光纤放大器特性研究

利用四能级结构速率方程组和光功率传输方程组,研究了在碲基掺铒光纤(EDTF)中内插一个光隔离器、形成两段级联的碲基掺铒光纤放大器(EDTFA)后对EDTFA性能的改善.结果表明,在给定泵浦方式、泵浦功率、纤芯掺杂浓度和输入信号功率条件下,两段级联EDTFA可以有效的抑制光纤中反向传输放大自发辐射(ASE)噪声,降低反转粒子数的消耗,从而提高信号增益、输出功率,并且降低了噪声系数.对不同光纤长度和光隔离器内插在光纤中不同位置的研究表明,当光纤为最佳长度和光隔离器在最佳位置处时,可使短波长信号增益增加10 dB,噪声系数减小1 dB,并进一步增加了放大带宽以及功率转换效率.     

硫系玻璃基掺铒微结构光纤4.5μm波段中红外信号放大特性

为进一步揭示硫系玻璃基掺Er3+微结构光纤作为中红外光纤放大器增益介质的可行性,数值求解了800 nm泵浦波长下Ga5Ge20Sb10S65硫系玻璃基掺Er3+微结构光纤中Er3+离子数速率方程和光功率传输方程组,理论研究了4.5μm波段中红外信号的放大特性。结果显示,Ga5Ge20Sb10S65硫系玻璃基掺Er3+微结构光纤具有较高的信号增益和很宽的增益谱。在50 cm光纤长度上,最大信号增益超过了40 dB,高于30 dB信号增益的放大带宽达到了280 nm(4 420~4 700 nm)。同时,进一步研究分析了4 500 nm波长信号增益与光纤长度、信号输入功率和泵浦功率的关系。研究表明,Ga5Ge20Sb10S65硫系玻璃基掺Er3+微结构光纤是一种理想的可应用于4.5μm波段中红外宽带放大器的增益介质。     

L-波段掺铒光纤放大器增益谱特性研究

对掺铒光纤放大器 (EDFA)在L 波段 (L Band ,15 70～ 16 10nm)的增益谱特性进行了理论和实验研究。理论和实验研究得出在最佳反转粒子数密度 (N=0 39) 条件下 ,掺铒光纤L Band的平坦增益谱宽为 2 2nm(± 0 5dB) ,抽运功率与输入信号功率呈线性关系。实验测得L BandEDFA单信道小信号增益为 33dB。     

CATV光网络设备原理及应用第十四讲 EDFA的性能指标及应用分析

(上接第06期) EDFA的主要应用特性包括增益特性、输入输出特性、饱和特性、增益带宽特性和噪声特性等,它们与输入光功率大小、铒光纤长度及参数、泵浦功率大小及泵浦波长、信号波长等都有密切关系,本文将分别介绍.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.