沉积温度对IMO透明导电薄膜光电性能的影响

采用射频磁控反应溅射法在K9玻璃衬底上制备了掺钼氧化铟(Mo:In2O3,IMO)透明导电薄膜,研究了不同沉积温度条件下IMO薄膜的晶体结构、形貌及光电性能。结果表明:不同沉积温度下IMO薄膜均具有(222)择优取向。随着沉积温度的升高,IMO薄膜的载流子浓度增大、载流子迁移率增大、电阻率减小;沉积温度为350℃时,薄膜的最低电阻率为6.9×10-4Ω.cm,载流子浓度为2.15×1020cm-3,迁移率为45 cm2V-1s-1。在可见及近红外区,IMO薄膜的平均透过率大于80%以上。在近红外区,薄膜透过率随沉积温度的升高而增大;在中红外区,由于载流子的吸收,薄膜透过率迅速下降。     

退火氧分压对AZO薄膜的透光和导电性能的影响EI北大核心CSCD

在室温下采用射频磁控溅射粉末靶在玻璃基底上制备掺铝氧化锌(AZO)薄膜,采用扫描电镜、X射线衍射仪、紫外可见分光光度计和霍尔效应仪等手段表征和分析了薄膜的微观结构和光电性能,研究了退火氧分压对薄膜光电性能的影响。结果表明:退火后的AZO薄膜仍具有c轴择优取向的六方纤锌矿结构,薄膜的表面致密光滑;随着退火氧分压的降低AZO薄膜光学带隙变窄、透光率有所降低,但是其值均高于80%;随着退火氧分压的降低载流子浓度显著升高,电导特性明显改善,电阻率最低达到2.1×10^(-3)Ω·cm。     

掺锡氧化铟基底上锆钛酸铅铁电薄膜的制备与表征

用溶胶-凝胶工艺在掺锡氧化铟导电氧化物基底上制备了锆钛酸铅（PZT）铁电薄膜．采用快速热处理工艺改进铁电薄膜的晶格取向,用X射线衍射仪分析了薄膜的结晶取向,分别基于Al／PZT／ITO,1TO／PZT／1TO电容结构利用Sawyer-Tower电路原理测试了薄膜的铁电性能．结果表明,在磁控溅射法生长的1TO表面能够制备出具有钙钛矿结构的（110）取向的PZT铁电薄膜,所得薄膜的相对介电常数达到1000,剩余极化强度Pr达到和Pt基底上接近的15．2uc／cm^2,矫顽场强Ec达到70．8kV/cm．并且利用TF Analyzer 2000铁电分析仪测试了PZT铁电薄膜的疲劳特性,发现ITO底电极上PZT薄膜经过108次反转后,剩余极化强度仅下降15％．研究表明：磁控溅射法制备的掺锡氧化铟透明导电薄膜ITO可以作为铁电薄膜的上下电极．     

新型透明导电薄膜In2O3：Mo

ＭｏＯ３的饱和蒸气压较高，可以直接用热反应蒸发法制备Ｉｎ２Ｏ３：Ｍｏ（ＩＭＯ）透明导电薄膜。ＸＰＳ和ＸＲＤ测试结果证明，ＩＭＯ薄膜中的Ｍｏ是以Ｍｏ＾６＋离子形式取代了Ｉｎ２Ｏ３晶格中的Ｉｎ＾３＋离子而存在的，没有形成新的化合物，也没有改变Ｉｎ２Ｏ３的体心立方晶格结构。在不进行退火、放电等工艺处理的情况下，用常规的反应蒸发法，在约３５０℃，１．２ｍｍ厚的载玻片上制备的ＩＭＯ薄膜在可见光区域的平均透射     

直流磁控溅射工艺参数对掺钨氧化铟透明导电薄膜性能影响的研究

采用直流磁控溅射法制备了掺钨氧化铟(IWO)透明导电薄膜。研究了薄膜结构、表面形貌、光学和电学性能与各种制备参数之间的依赖关系。X射线衍射(XRD)谱分析结果表明随着基底温度的升高,薄膜的结晶性得到改善。原子力显微镜(AFM)测试结果表明薄膜颗粒均匀,表面平整。研究发现薄膜的电学性能对制备参数非常敏感。在基板温度为380℃的条件下所制备的样品在可见光区域(400~700 nm)的平均透射率(未扣除基底)均大于80%。获得的IWO薄膜最低电阻率为2.8×10-4 ohm.cm,对应载流子迁移率49 cm2V-1s-1,载流子浓度4.4×1020 cm-3,平均透射率83%。     

掺钼氧化锌透明导电薄膜光学性质研究

采用直流磁控反应溅射制备了掺钼氧化锌透明导电薄膜。研究了掺钼氧化锌薄膜的结构、表面形貌及其光学和电学性能。原子力显微镜扫描显示薄膜表面较为平整致密。制备出的掺钼氧化锌薄膜最低电阻率为9.4×10-4Ω.cm,相应载流子迁移率为27.3cm2V-1s-1,载流子浓度为3.1×1020cm-3。在可见光区域的平均透射率大于85%,折射率(550nm)为1.853,消光系数为7.0×10-3。通过调节氧分压可以调节薄膜载流子浓度,禁带宽度随载流子浓度的增加由3.37增大到3.8eV,薄膜的载流子有效质量m*为0.33倍的电子质量。     

透明导电IMO薄膜的载流子迁移率研究

采用van-der-Pauw法、等离子振荡波长法和光谱拟合法等三种方法对IMO(In2O3：Mo)薄膜和ITO(In2O3：Sn)薄膜的载流子迁移率进行了测量和比较。结果表明，IMO薄膜的载流子迁移率高达100cm^2V^-1s^-1以上，远超过已报导的其他掺杂透明导电氧化物（TCO）薄膜的载流子迁移率；IMO薄膜的载流子有效质量约为电子静止质量的0.35倍；IMO薄膜的高载流子迁移率主要是由载流子受到的散射作用较弱所引起。这无法用通常的掺杂TCO薄膜的载流子散射理论来解释，为此引入复合效应进行分析。在ITO薄膜中，每形成一个电中性复合粒子，就会使两个掺杂的Sn^4 失去贡献载流子的电活性；而在IMO薄膜中，即使一个掺杂Mo^6 与晶格间隙中的一个O^2-结合成复合离子后，该复合离子仍然会贡献出一个载流子，故薄膜中形成的电中性复合粒子数目较少，从而导致价态差为3的IMO薄膜中的电中性复合粒子对载流子的散射远低于价态差为1的ITO薄膜，因此，IMO薄膜有可能获得较高的载流子迁移率。     

ZAO透明导电薄膜的制备及性质

ZAO（ZnO：Al）透明导电薄膜是一种具有高的载离子浓度和宽禁带的半导体氧化物，电学和光学性能优异。极具应用前景。本文介绍了ZAO薄膜的制备现状、特性、磁控溅射参数对其电学和光学性质的影响以及今后研究的方向。     

反应溅射掺锡氧化铟薄膜成份与结构的研究

本文介绍了采用直流磁控反应溅射技术，在氩氧混合气体条件下制备掺锡氧化铟薄 膜（简称 ＩＴＯ膜）的工艺。给出的 ＤＰＳ、ＡＥＳ、ＸＰＣ的分析结果表明： ＩＴＯ薄膜 的成份为 Ｉｎ＿２Ｏ＿３和 ＳｎＯ＿２组成；其 ＩＴＯ薄膜为立方结构。     

臭氧在热反应蒸发法低温制备透明导电薄膜IMO中的作用

虽然采用常规的热反应蒸发法就可以在约350℃的玻璃基底上制备出性能优良的In2O3∶Mo(IMO)薄膜,但是随着基底温度的降低,IMO薄膜的电导率和可见光透射比都迅速减小.通过高频放电在反应气体中加入O3后,可以在室温下将In充分氧化成In2O3,极大地改善了IMO薄膜的透明性.而且,IMO薄膜的结晶程度也得到了小幅度提高,这有利于提高薄膜电导率.在不加热基底的情况下(约30℃),制备的约400nm厚的IMO薄膜的电阻率小于5×10-2Ω*cm;在基底温度为100℃时电阻率可以小于2×10-3Ω*cm;同时它们在可见光区域的总平均透射比(含1.2mm厚载玻片基底)都超过0.8.     

Effect of base and oxygen partial pressures on the electrical and optical properties of indium molybdenum oxide thin films

Indium molybdenum oxide thin films were RF sputtered at room temperature on glass substrates with a reference base pressure of 7.5 × 10^− 4 Pa. The electrical and optical properties of the films were studied as a function of oxygen partial pressures (OPP) ranging from 1.5 × 10^− 3 Pa to 3.5 × 10^− 3 Pa. The obtained data show that the bulk resistivity of the films increased by about 4 orders of magnitude (from 7.9 × 10^− 3 to 7.6 × 10¹ Ω-cm) when the OPP increased from 1.5 × 10⁻³ to 3.5 × 10^− 3 Pa, and the carrier concentration decreased by about 4 orders (from 1.77 × 10²⁰ to 2.31 × 10¹⁶ cm^− 3). On the other hand, the average visible transmittance of 30.54% of the films (brown colour; OPP = 1.5 × 10^− 3 Pa) was increased with increasing OPP to a maximum of 80.47% (OPP = 3.5 × 10^− 3 Pa). The optical band gap calculated from the absorption edge of the transmittance spectra ranges from 3.77 to 3.88 eV. Further, the optical and electrical properties of the films differ from those deposited at similar conditions but with a base pressure lower than 7.5 × 10^− 4 Pa.     

Effect of oxygen partial pressure on the structural and optical properties of sputter deposited ZnO nanocrystalline thin films

We report the influence of deposition parameters such as oxygen partial pressure and overall sputtering pressure on the structural and optical properties of the as-grown ZnO nanocrystalline thin films. The films were prepared by dc magnetron sputtering using Zn metal target under two different argon and oxygen ratios at various sputtering pressures. Microstructure of the films was investigated using X-ray diffraction and scanning electron microscopy. Optical properties of the films were examined using UV-Visible spectrophotometer. The results show that the films deposited at low oxygen partial pressure (10%) contain mixed phase (Zn and ZnO) and are randomly oriented while the films deposited at higher oxygen partial pressure (30%) are single phase (ZnO) and highly oriented along the c-axis. We found that the oxygen partial pressure and the sputtering pressure are complementary to each other. The optical band gap calculated from Tauc's relation and the particle size calculation were in agreement with each other.     

溶胶-凝胶法制备的ITO薄膜电学及光学性能的研究

以无机盐为出发原料．采用溶胶-凝胶法制备了氧化铟锡(ITO)透明导电薄膜。进一步研究了热处理气氛、温度、Sn掺杂量时In2O3薄膜电学及光学性能的影响。分别在氮气、真空和空气3种环境下对薄膜进行热处理．结果表明真空热处理后薄膜的导电性最好。研究了薄膜方块电阻随锡掺杂量的变化．发现薄膜的方阻随掺锡量的增加先减小后增加,并在掺杂量为7mol％左右时达到最低;另外探讨了热处理温度对薄膜光电性能的影响．结果发现薄膜方块电阻随热处理温度的升高而减小．且热处理温度高于700℃后变化不显著,薄膜在可见光区平均透过率随热处理温度升高呈上升趋势。本研究所制得的薄膜可见光区(400-800nm)平均透过率可达85％、方阻约为66Ω。     

Influences of deposition rate and oxygen partial pressure on residual stress and microstructure of YSZ thin films

Yttria-Stabilized Zirconia (YSZ) thin films were deposited on borosilicate crown glass substrates using electron beam evaporation technique and controlling technological parameters: deposition rate and oxygen partial pressure. Spectrophotometry, optical interferometry and X-ray diffraction were used to investigate how the thin film optical properties, residual stresses, and structure depend on these parameters. The results showed that the deposition rate had a significant influence on the increase of the refractive index of YSZ thin films while the oxygen partial pressure had less influence on it. In all samples, the tensile stress increased with the increasing of deposition rate and the decreasing of oxygen partial pressure. Meanwhile, all deposited films were poly-crystallizations, while crystallite size and preferential orientation of YSZ thin films changed as a function of deposition rate and oxygen partial pressure. The variations of the optical spectra and residual stress corresponded to the evolution of the film structures induced by the deposition parameters.     

改进sol-gel技术BST薄膜的制备及性能研究

为了制备高性能BST薄膜,采用改进的溶胶 凝胶(sol gel)方法在Pt/Ti/SiO2/Si基片上制备出了不同结构、不同组成的BST薄膜;研究了BST薄膜的微观结构及其介电、铁电性能。XRD分析表明,当热处理温度为750℃时,得到完整钙钛矿结构的薄膜材料。SEM电镜显示,含种子层的Ⅱ、Ⅲ、Ⅳ3种不同类型的BST薄膜的结晶状况有很大改善。得到的BST20薄膜的介电峰温区覆盖常温段,介电常数为405,介电损耗为0.011,剩余极化强度为Pr=2.3μC·cm-2,矫顽场为Ec=45kV/cm。     

Thickness dependence of structural and optical properties of indium tin oxide nanofiber thin films prepared by electron beam evaporation onto quartz substrates

Indium tin oxide (ITO) thin films, produced by electron beam evaporation technique onto quartz substrates maintained at room temperature, are grown as nanofibers. The dependence of structural and optical properties of ITO thin films on the film thickness (99-662 nm) has been reported. The crystal structure and morphology of the films are investigated by X-ray diffraction and scanning electron microscope techniques, respectively. The particle size is found to increase with increasing film thickness without changing the preferred orientation along (2 2 2) direction. The optical properties of the films are investigated in terms of the measurements of the transmittance and reflectance determined at the normal incidence of the light in the wavelength range (250-2500 nm). The absorption coefficient and refractive index are calculated and the related optical parameters are evaluated. The optical band gap is found to decrease with the increase of the film thickness, whereas the refractive index is found to increase. The optical dielectric constant and the ratio of the free carrier concentration to its effective mass are estimated for the films.     

Effect of the oxygen partial pressure on the microstructure and optical properties of ZnO:Cu films

Cu-doped zinc oxide (ZnO:Cu) films were deposited on Si substrates using radio frequency reactive magnetron sputtering at different oxygen partial pressures. The effect of oxygen partial pressure on the microstructures and optical properties of ZnO:Cu thin films were systematically investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and fluorescence spectrophotometer. The results indicated that the grain orientation of the films was promoted by appropriate oxygen partial pressures. And with increasing oxygen partial pressure, the compressive stress of the films increased first and then decreased. The photoluminescence (PL) of the samples were measured at room temperature. A violet peak, two blue peaks and a green peak were observed from the PL spectra of the four samples. The origin of these emissions was discussed and the mechanism of violet emission of ZnO:Cu thin films were suggested.     

Electrical,electromechanical and thermal properties of thin tellurium films

Thin films of tellurium of wide range of thicknesses have been deposited by vacuum evaporation and their electrical properties such as electrical resistivity and temperature coefficient of resistance have been measured. The suitability of these films for possible use as strain gauges has been studied and their strain resistivity behaviour is presented. The thermal conductivity of these films have been determined and these results are presented alongwith. An interesting phenomenon has been noticed. In all these effects an extraordinary behaviour is observed at a specific thickness. This smears out with an increase in the thickness of the film. These effects are explained in terms of size effects in thin films.     

Effect of oxygen pressure on the structural and optical properties of ZnO thin films on Si (111) by PLD

ZnO thin films were grown on Si (111) substrates by pulsed laser deposition (PLD) at various oxygen pressures in order to investigate the structural and optical properties of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He-Cd laser. The structural and morphological properties of the films were investigated by XRD and AFM measurements, respectively. The results suggest that films grown at 20 Pa and 50 Pa have excellent UV emission and high-quality crystallinity. The research of PL spectra indicates that UV emission is due to excitonic combination, the green band is due to the replacing of Zn in the crystal lattice for O and the blue band is due to the O vacancies.     

溶剂体系对c轴择优取向ZnO薄膜结构和光学性质的影响

以无水乙醇、乙二醇甲醚、乙二醇甲醚/乙醇混合溶液(1∶1)为溶剂体系,采用溶胶-凝胶法制备了ZnO透明薄膜,并利用场发射扫描电镜、X射线衍射和反射光谱仪等研究了溶剂体系对薄膜组成、结构和光学性能的影响。结果表明,3种溶剂所制备的ZnO薄膜均为六方纤锌矿型结构,具有c轴择优取向;以乙二醇单甲醚/乙醇混合溶液(1∶1)为溶剂制备的ZnO薄膜平整、致密,在可见光区域透光率达到90%左右,禁带宽度为3.25eV,具备制作薄膜太阳能电池透明导电电极材料的应用价值。