裂变快中子辐照在GaAs中产生缺陷的正电子湮没研究

采用自电子湮没寿命测量方法研究了注量为６．５×１０＾１５／ｃｍ＾２和１．４×１０＾１４／ｃｍ＾２，Ｅｎ≥１ＭｅＶ的裂变中子辐照在掺Ｓｉ，Ｎ型单晶ＧａＡｓ产物的缺陷，此辐照在ＧａＡｓ中产生单空位和双空位缺限，缺陷浓度于比于辐照注量，高温退火产生三空位缺陷及小空位团，单空位，双空位和三空位缺陷的退火温度分别为２５０，４５０，６５０℃。     

GaP高能重离子辐照损伤及退火的正电子湮没研究

用正电子湮没寿命技术研究２．４＊１０＾１５／ｃｍ＾２和２．２＊１０＾１６／ｃｍ＾２ ８５ＭｅＶ＾１９Ｆ离子辐照ＧａＰ的辐照损伤及其退火效应。结果表明,高低两种注量辐照在ＧａＰ中产生浓度较高的单空位。在３００－１０２３Ｋ温度范围内测量了正电子湮没寿命温度的变化。低注量辐照品在退火过程中有双空位的形成;而高注量辐照样品中观察到比双空位更复杂的缺陷形式,其完全被退火的温度比低剂量辐照的高２５０Ｋ。     

高能（MeV级）氧离子注入本征型GaAs的电性能及注入损伤退火行为的研究

在本征型ＧａＡｓ中注入２．０ＭｅＶ（剂量１．０×１０＾１５／ｃｍ＾２）＋２．９ＭｅＶ（剂量１．１×１０＾１５／ｃｍ＾２）的＾１６Ｏ，使氧在约１．５－２．５μｍ之间形成均匀分布。注入样品分别经４００－８００℃、１５ｍｉｎ热退火后的电阻率测量表明，经５００℃和６００℃退火后的样品具有高的电阻率（～１０＾８Ω·ｃｍ）；而当退火温度进一步升高时，其电阻率逐渐下降，并具有ｐ型导电行为。沟道ＲＢＳ分析表明，当     

^154Sm（n,2n）^153Sm和^148Sm（n,p）^148gPm反应测面的测量

报道了在Ｅｎ＝１４．５－１４．９ＭｅＶ中子能区用活化法以＾２７Ａｌ（ｎ，ａ）＾１４Ｎａ的反应截面为中子注量标准测得的＾１５４Ｓｍ（ｎ，２ｎ）＾１５３Ｓｍ和＾１４８Ｓｍ（ｎ，ｐ）＾１４８ｇＰｍ反应截面，并将其与已有的数据进行了比较，中子能量用铌锆截面比法测定。     

85 MeV19F离子辐照InP正电子湮没研究

用正电子湮没寿命技术研究了注量为１．６＊１０＾１６ＣＭ＾－２Ｒ ８５ＭｅＶ＾１９Ｆ离子辐照ＩｎＰ产生的辐照效应。实验表明辐照在ＩｎＰ中产生单空位型缺陷。     

高注量快中子辐照在α—Al2O3中产生空洞的正电子湮没研究

采用正电子湮没技术研究３×１０＾２０／ｃｍ＾２中子注量，Ｅｎ≥１ＭｅＶ快中子辐照在α－Ａｌ２Ｏ３中产生的辐照效应，实验发现α－Ａｌ２Ｏ３在辐照后的８５０℃退火形成尺寸约为０．７ｎｍ的空洞。     

热中子辐照提高掺硼YBaCuO超导体Jc的研究

掺杂天然硼的熔融织构生长（Ｍｅｌｔ－ｔｅｘｔｕｒｅｄＧｒｏｗｔｈ）的ＹＢｘＢａ２Ｃｕ３Ｏｙ（ｘ＝０．０１５,０．０３５）超导体经注量为５＊１０＾１７ｃｍ＾－２的热中子辐照后,磁临界电流密度Ｊｃ增至３．８倍。＾１０Ｂ（ｎ,α）＾Ｌｉ、＾７Ｌｉ＊（Ｑ＝＋２．７９ＭｅＶ）核反应出射的高能粒子能在超导体中产生均分布的,可以作为磁通钉扎中心的辐照伤,以便提高Ｊｃ。掺硼超导体热中子辐照后射性副产物的半衰期较短     

75 MeV/u~(12)C离子束在辐射生物实验区产生的中子角分布

本文应用Ａｌ为阈探测器在兰州重离子研究装置（ＨＩＲＦＬ）的辐照终端上研究了７５ＭｅＶ／ｕ１２Ｃ离子束在辐射生物实验区产生的能量大于６ＭｅＶ的中子角分布。实验中束流经２４μｍ的Ｎｉ窗及由１０μｍ镀金的Ｍｙｌａｒ膜组成的平行板电离室后进入实验区,７个２０ｍｍ×５ｍｍ的阈探测器放置在距Ｎｉ窗２５ｃｍ处的不同角度上（６．５°～３６．０°）,束流强度为３ｎＡ,活化样品测量用高纯锗探测器。结果表明,实验区产生的中子具有明显的前冲分布,测得的中子注量率分布,在与束流方向夹角６．５°～３６．０°范围内,大致呈指数衰减。这为进一步开展的重离子治癌研究提供了辐射防护的实验依据。     

热中子辐照GaAs损伤研究

在热中子与快中子成份比大于７０的条件下，用６．５×１０１６ｃｍ－２和６．５×１０１８ｃｍ－２剂量水平辐照纯净ＧａＡｓ样品，研究由于嬗变产生的杂质和损伤。所得结果表明：热中子对Ｇａ、Ａｓ发生俘获核反应，其最终稳定产物Ｇｅ作为两性杂质元素被导入；复杂的移位缺陷形成及其热行为是影响辐照后ＧａＡｓ电学性质变化的重要因素。     

47MeV／u的C^6^＋在CaVSn：YIG中辐照效应的研究

用兰州重离子研究装置（ＨＩＲＦＬ）首次进行了４７ＭｅＶ／ｕ的Ｃ＾６＾＋离子辐照ＣａＶＳｎ：ＹＩＧ的实验。通过穆斯堡尔效应和正电子寿命测量对４７ＭｅＶ／ｕ的Ｃ＾６＾＋离子在ＣａＶＳｎ：ＹＩＧ中的辐照效应进行了初步研究。发现辐照导致内磁场方向趋于各向同性分布，由穆斯堡尔谱未观察到非晶化现象。缺陷的数量随Ｃ＾６＾＋离子在样品中电子能量损失的增加而增加。     

The 3 MeV/6 MeV Electron Linac Embraces First Export

正A 3 MeV/6 MeV Electron Linear Accelerator(Linac)developed independently by CIAE was exported overseas on 14 May,2018.The Linac used for Non Destructive Testing(NDT)is a dual energy(3 MeV/6 MeV)accelerator which can switch between 3 MeV and6 MeV in milliseconds.With widest energy band,it has been one of the most advanced accelerators     

Comparison of 16 MeV proton, 14 MeV neutron and fission neutron damage in copper

The irradiation damage structures produced in high-purity copper by a fluence of $\text{3 × 10}{}^{16}$ particles/cm² of 16 MeV protons, 14 MeV neutrons, and fission neutrons ($\text{E > 1 MeV}$) were studied by transmission electron microscopy. The damage consists of vacancy-and-interstitial clusters or sessile Frank dislocation loops oriented on {111} planes of the copper matrix, and ranges in size from 25 Å (lower limit of resolution) to 200Å in diameter. p]The size-density distributions of the clusters in the 14 MeV neutron and 16 MeV proton irradiated samples were virtually identical, and the average size of the clusters in these two groups of specimens was substantially larger than was the case for those in the fission-neutron-irradiated copper.     

High-Energy PIXE using 68 MeV protons

The elemental composition of realistic thick samples has been measured with PIXE by 68 MeV protons. Heavy elements can be well detected much deeper below the surface, than with other methods. Measurements on objets d'art are presented. Large and complicated objects can be measured easily.     

Defect evolution in MeV ion-implanted silicon

Lightly doped silicon samples of both n- and p-type have been implanted with low doses of H, B and Si ions using energies between 1 and 6 MeV. The resulting electrically active point defects were characterized by deep level transient spectroscopy (DLTS) and several of these defects involve oxygen and/or carbon, two major impurities in as-grown crystalline silicon. Both interstitial- and vacancy-type defects are observed; in particular, interstitial carbon is found to migrate at room temperature with a diffusion constant of 1 × 10⁻¹⁵ cm² s⁻¹ and is effectively trapped by interstitial oxygen atoms. The concentration of implantation-induced defects increases linearly with dose but the defect production decreases at high enough dose rates. This dose rate effect depends on the ion mass and is qualitatively predicted by computer simulations of the defect reaction kinetics.     

Water-Cooled Target of 14 MeV Neutron Source

A cooling system of a stationary target for the Fusion Neutronics Source (FNS) has been designed to satisfy the structural, thermal and hydraulic requirements. Two square tubes for ion beam and for cooling water were concentrically placed and the target was mounted on the top of the beam guide tube. The end plate of the outer tube was devised to be removable for easier replacement of the target. In order to test the cooling capability of the system, dummy target assemblies with electical heaters were used in the experiment of heat transfer in place of using an accelerator. Correlations of heat transfer and head loss were obtained experimentally as a function of Reynolds number. The extrapolation of the data has shown that for the present target system, about 2.3 kW is the maximum power for the beam in diameter of 15 mm. This value was sufficiently large compared with the required heat load of FNS.     

Measurement of Neutron Inelastic Scattering Cross Section for (56)~Fe from 1 MeV to 3 MeV

正Iron is a widely used material in nuclear reactor.Neutron inelastic scattering is an important energy loss mechanism.Its precision affects reactor calculations and radiation shielding design.1.2 MeV and 2.5 MeV neutrons were produced