含Ti-Al阻挡层的硅基Nb掺杂Pb(Zr,Ti)O3铁电电容器的研究

应用非晶的Ti-Al薄膜作为导电阻挡层,通过溶胶-凝胶法和磁控溅射法成功地在Si基片上制备了La0.5Sr0.5CoO3/Pb(Nb0.02Zr0.39Ti0.59)O3/La0.5Sr0.5CoO3(LSCO/PNZT/LSCO)电容器异质结,研究了该异质结的铁电性能。当外加电压为5V时,LSCO/PNZT/LSCO铁电电容器的剩余极化强度为-18.0μC/m2,矫顽电压为-0.7 V,该电容器具有较好的保持持性和抗疲劳特性。     

硅基高度择优取向PZT厚膜的制备及性能研究

应用溶胶-凝胶法成功地在以SrTiO3(STO)为模板/阻挡层Si(001)基片上制备了La-Sr-Co-O/ Pb(Zr0.5Ti0.5)O3(PZT)/La-Sr-Co-O/STO/Si异质结,PZT的厚度为0.8μm.研究了异质结的结构和性能.实验发现,PZT结晶良好、具有(001)高度择优取向以及较高的极化强度和较小的极化强度对脉冲宽度的依赖性;当外加电压为50V时,电阻率仍＞108Ω·cm.     

低温制备Pb(Zr0.52Ti0.48)O3铁电薄膜及其性能研究

采用脉冲激光沉积技术（PLD）在（100）p-Si衬底上,低温淀积、快速退火成功地制备了具有完全钙钛矿结构的多晶PZT铁电薄膜,所制备的PZT铁电薄膜致密、均匀,表现出良好的介电和铁电性能,其介电常数和介电损耗100kHz下分别为320和0.08,剩余极化Pr和矫顽场Ec分别为14μC/cm^2和58kV/cm,＋5V电压下漏电流密度低于10^-7A/cm^2。10^7次极化反转后剩余极化仅下降10％,具有较好的疲劳特性。     

流延成型制备(Na0.85K0.15)0.5Bi0.5TiO3陶瓷的显微结构及性能

采用流延成型工艺制备了（Na0.85K0.15）0．5Bi0.5TiO3无铅压电陶瓷，研究了陶瓷退火前后的显微组织结构，结果表明陶瓷主晶相为钙钛矿相结构，并伴随有形貌呈针状的第二相K2Ti6O13出现；陶瓷断面和表面的晶粒形貌有差别，采用退火处理无法消除第二相K2Ti6O13，但可有效改善陶瓷断面的晶粒形貌，同时增大材料的矫顽场，并使剩余极化强度（Pr）、压电常数（d33）、介电常数（ε）与介电损耗（tanδ）变小．（Na0.85K0.15）0.5Bi0．5TiO3无铅压电陶瓷的电滞回线表现出明显铁电体的特征，其矫顽场为2680V／mm，Pr达36．6μC／cm^2，d33达113pC／N，‰为0．27，Qm达154．     

掺锡氧化铟基底上锆钛酸铅铁电薄膜的制备与表征

用溶胶-凝胶工艺在掺锡氧化铟导电氧化物基底上制备了锆钛酸铅（PZT）铁电薄膜．采用快速热处理工艺改进铁电薄膜的晶格取向,用X射线衍射仪分析了薄膜的结晶取向,分别基于Al／PZT／ITO,1TO／PZT／1TO电容结构利用Sawyer-Tower电路原理测试了薄膜的铁电性能．结果表明,在磁控溅射法生长的1TO表面能够制备出具有钙钛矿结构的（110）取向的PZT铁电薄膜,所得薄膜的相对介电常数达到1000,剩余极化强度Pr达到和Pt基底上接近的15．2uc／cm^2,矫顽场强Ec达到70．8kV/cm．并且利用TF Analyzer 2000铁电分析仪测试了PZT铁电薄膜的疲劳特性,发现ITO底电极上PZT薄膜经过108次反转后,剩余极化强度仅下降15％．研究表明：磁控溅射法制备的掺锡氧化铟透明导电薄膜ITO可以作为铁电薄膜的上下电极．     

沉积在Pt电极上的铁电PZT薄膜特性

研究了射频磁控溅射沉积在Pt电极上的Pb（Zr0．53Ti0．47）O3薄膜特性。经过不同温度退火处理后得到了钙钛矿结构的PZT薄膜。在对其结构的形成和变化进行研究的基础上，探讨了薄膜PZT相的形成机理。其电性能的测试表明，这种铁电PZT（53／47）薄膜具有较好的铁电性能和疲劳特性。在600℃下PZT薄膜的剩余极化强度Pr为24．8μC／cm2，矫顽场强度Ec为70kV／cm。210kV／cm的电场下，疲劳循环直到4×108次时，最大极化强度仍有20．6μC／cm2，降低了约34％，其剩余极化强度保持为10μC／cm2左右。     

偏轴磁控溅射法外延BiFeO3薄膜的介电性能与阻变效应

利用偏轴射频磁控溅射法, 在(001) SrTiO₃(STO)单晶基片上制备了Pt/BiFeO₃/La_0.5Sr_0.5CoO₃/STO (Pt/BFO/ LSCO/STO)异质结电容器。研究了BiFeO₃薄膜的结构和物理性能。原子力显微镜(AFM)和X射线衍射(XRD)分析表明: BFO薄膜结晶质量良好, 且为单相(00l)外延钙钛矿结构。介电性能测试结果发现: 在5 V驱动电压下, Pt/BFO/LSCO电容器呈现饱和的蝶形回线, 调谐率和介电损耗分别为14.1%和0.19。此外, 阻变机制研究表明: 在0→5→0 V正向电压和0→-5→0 V负向电压下, 阻变均为高阻向低阻转变规律, 呈现为铁电二极管的阻变开关行为。通过I-V曲线拟合, 得到0→5→0→-5 V时阻变机制为空间电荷限制电流陷阱能级的填充和脱陷, 而-5→0 V时符合界面限制的F-N隧穿机制。     

Na0.5Bi0.5TiO3-BaTiO3陶瓷的介电和压电性能研究

研究了Na0.5Bi0.5TiO3和（Na0.5Bi0.5）0．94Ba0．06TiO3陶瓷的电滞回线，压电性能和热滞现象。得到（Na0.5Bi0.5）0．94Ba0．06TiO3陶瓷的剩余极化Pr=19μC/cm^2，矫顽场Ec=4.7kV/mm.发现有适量的Ba^2 取代（Na0.5Bi0.5)^2 尽管压电性能有所提高，但同时使得材料的温度稳定性大大降低。     

玻璃基Pt/Pb(Zr_(0.4)Ti_(0.6))O_3/ITO电容器的结构及物理性能研究

采用溶胶-凝胶方法在玻璃基ITO电极上制备了Pt/Pb(Zr0.4Ti0.6)O3(PZT)/ITO电容器.采用X射线衍射仪、铁电测试仪、分光光度计对其微观结构、电学性能及光学性能进行了测量.结果表明PZT薄膜结晶良好,具有(101)高度择优取向.铁电电容器具有良好的保持特性和抗疲劳特性,具有较大的剩余极化强度和电阻率,5V电压下的剩余极化强度和电阻率分别为41.7μC/cm2和2.5×109Ω.cm;漏电流测量结果表明电压小于0.8V时为欧姆导电机制,当电压大于0.8V时,漏电流满足肖特基发射机制.光学透射谱结果表明在短波范围内,PZT表现出强吸收作用;在长波范围内,PZT表现为强透射,最大透射率达到95%.     

La0.5Sr0.5CoO3底电极上的BiNdFeO3薄膜的电性质。

用溶胶．凝胶方法在La0.5Sr0.5CoO3底电极上制备了纯的和10％A位Nd替代的BiFeO3薄膜。对薄膜的结构、形貌和电性质进行了研究。XRD研究表明两薄膜呈随机取向。而SEM测试结果表明，通过Nd替代，构成薄膜的晶粒显著减小，表面出现了针孔。铁电性研究表明，通过Nd替代，薄膜的铁电性得到显著增强，剩余极化强度由1．87μC/cm^2。增加到3．11μC/cm^2。而漏电流特性测试表明，Nd替代有效地限制了BiFeO3薄膜在正向偏压下的漏电流。     

Phonon Vibration and Conduction of La2 ? xSrxCuO4 ? δ and La1.85 ? xSr0.15 + xCu1 ? xCoxO4 ? δ

Polycrystalline samples La_{2 – x} Sr _x CuO_{4 –} (0.06 x 0.5) and La_{1.85 – x} Sr_{0.15 + x} Cu_{1 – x} Co _x O_{4 –} (0 x 1) were synthesized by a conventional solid state reaction method. The structure, phonon vibration, and conduction were investigated by means of XRD, infrared (IR) spectra, and resistance. It is found that the increase of itinerant hole carriers could mask the in-plane stretching vibration mode (689 cm^–1). The softening of the phonon vibration mode gives an index of the weakening of hybridization. The distortion of CuO₆ octahedron and the microstructural inhomogeneity induced by Co doping lead to the widening of the IR absorption peaks.     

Polarons and strong electron-phonon coupling in the optical response of La{2-x}SrxCuO4SrxCuO4

A multiliquid approach, based on free carriers with strong electron-phonon interaction, localized polaronic states near 0.15 eV, and a mid-infrared band at 0.5 eV, is applied to model the optical response of La_{2-x}Sr_xCuO₄. The normal state reflectance and absorbance of La_1.83Sr_0.17CuO₄ are investigated and their temperature dependence is explained. Both the ac and dc response are recovered, and the quasilinear behavior of the optical scattering rate up to 3000–4000 cm^-1 is found to be consistent with strong electron-phonon interaction, which also accounts for the value ofT _c . In the superconducting state a comparison with optical data indicates the presence of additional carriers in the conduction band. Model calculations suggest the 0.5 eV mid-infrared band as the source of these carriers and indicate a bipolaronic origin of this band.     

Lattice instability in the normal state of La2?xSrxCuO4

Novel softening has been found in the transverse elastic constant (C ₁₁–C ₁₂)/2 below 50 K in single-crystalline La_1.86Sr_0.14CuO₄ (LSCO) by high-precision ultrasonic measurements in magnetic fieldsH along thec axis. With decreasing temperature, this lattice softening persists down to the superconducting transition temperatureT _c(H), which is reduced to 14 K by applying fields up to 14 T. BelowT _c(H) the softening turns to rapid hardening. This behavior indicates the presence of lattice instability of the orthorhombic (Bmab) structure in the normal state of LSCO, which disappears in the superconducting state. This is evidence for the intimate interplay between high-T _c superconductivity and the lattice instability in LSCO.     

Independent Control of Low-Energy Resonant States and Polaron States by the Zn-Doping and the Structural Transition in La2−x Sr x CuO4 and La2−x Ba x CuO4 (x=0.11)

The superconductivity depression mechanisms at x≈1/8 in La_2−x Ba _x CuO₄ and Zn substitution in La_2−x Sr _x CuO₄ were investigated by Raman scattering. About 80% of low-energy electronic states are two-dimensional at x≈1/8 and form the Fermi arc around (π/2,π/2). The low-energy states are composed of the resonant peak relating to the insulator–metal transition and the polaron states of the B _3u phonons. Zn substitution depresses the resonant peak, while the LTT structure depresses the polaron states. The superconductivity is suppressed if one of them is reduced.     

Singular Band Behavior of the Extended Emery Model for the Superconducting Cuprates

Mean field slave-boson approximation is performed on the extended Emery model for the CuO₂ conducting plane. The model is parameterized by Cu–O charge transfer energy _pd , copper–oxygen overlap t ₀, oxygen–oxygen overlap t', and Coulomb interaction U on the copper site taken as infinite. Special emphasis is placed on the role of t in the renormalization trends of the effective band parameters _pf and t, replacing _pd and t ₀, at small doping . It is shown that small, negative t expands the range of stability of the metallic phase, changing, in the second order of the perturbation theory, the nature of the metal–insulator transition point. In the nonperturbative limit, t modifies strongly the renormalization of _pf , making it saturate at the value of 4t. Finite doping suppresses the insulating state approximately symmetrically with respect to its sign. The regime _pf 4t fits very well the ARPES spectra of Y123, Bi2212, and LSCO and also explans, in the latter case, the evolution of the FS with doping accompanied by the spectral weight-transfer from the oxygen to the resonant band.     

Specific Heat of YBa2Cu3O7??δ and (La2?xSrx)CuO4: Evidence for d-Wave Pairing

New low-temperature specific-heat data for YBa₂Cu₃O_7–, 00.2, and (La_1.85Sr_0.15)CuO₄ in magnetic fields (H) to 9 T are reported. They show features predicted for the lines of nodes in the energy gap that are expected for d-wave pairing; for H=0, a T ² term; for H0 an H ^1/2 T term with a crossover to a more complicated T dependence at higher T and lower H. The results are compared with recent measurements in other laboratories.     

Cr/Cu/Ag/Cu/Cr新型银基复合薄膜电极的防氧化性能研究

采用直流磁控溅射技术和光刻工艺制备了Cr/Cu/Ag/Cu/Cr复合薄膜及其电极,研究不同温度热处理对复合薄膜和电极结构、表面形貌和电性能的影响。Ag层与最外层的Cr层之间的Cu层不仅增强了Cr和Ag之间的粘附力,而且起到了牺牲层和氧气阻挡层的作用;Cr和Cu对Ag的双重保护使得薄膜电极在温度小于500℃时电阻率保持较为稳定,约为3.0×10-8~4.2×10-8Ω·m之间。然而由于电极表面氧化和边沿氧化的共同作用,薄膜电极的电阻率在热处理温度超过575℃出现了显著的上升。尽管如此,Cr/Cu/Ag/Cu/Cr薄膜电极仍然是一种能够承受高温热处理并且保持较低电阻率的新型电极,满足场发射平板显示器封接过程中的热处理要求。     

超声喷雾热分解制备锂离子电池正极材料 LiNi1/3Co1/3Mn1/3O2 及表征

采用超声喷雾热分解工艺合成了球形锂离子电池正极材料LiNi1／3Co1／3Mn1／3O2．考察了不同前驱溶液对粉体形貌的影响，用喷雾热分解过程机理分析了形貌差异的原因，另外研究了不同的后处理烧结时间对样品电化学性能的影响．试验结果表明，采用硝酸盐溶液经喷雾热分解制备的前驱体在900℃烧结6h可以得到电化学性能优良的正极材料，在3．0-4．3V电压区间里，首次放电容量达157．7mAh／g，40次循环后容量仍保持146．6mAh·g^-1．     

Comparison of oxidation behaviors of 3D C/PyC/SiC and SiC/PyC/SiC composites in an O2-Ar atmosphere

Oxidation behaviors of three-dimensional woven C/PyC/SiC and SiC/PyC/SiC prepared by CVI processing were investigated in an O₂-Ar atmosphere at 600 °C, 900 °C and 1200 °C, respectively, by using thermogravimetric analysis. After machining, both composites should be protected by CVD SiC coating, which was demonstrated effectively in improving the oxidation resistance of both composites. The oxidation behavior of SiC/PyC/SiC was different from that of C/PyC/SiC. The oxidation kinetics of C/PyC/SiC was controlled by the rate of the reaction between carbon and oxygen at 600 °C and by the oxygen diffusion through the coating microcracks at 900 °C. The oxidation kinetics of SiC/PyC/SiC at both 600 °C and 900 °C were assumed to be controlled by the oxygen diffusion through channels of coating and matrix defects and looped pipelines instead of PyC interphase. At 1200 °C, the oxidation was controlled by oxygen diffusion through the SiO₂ scale, which took place mainly on the surfaces of both composites.