Structural mechanisms of optimization of the photoelectric properties of CdS/CdTe thin-film heterostructures

Comparative studies of the effect of chloride treatment of CdS/CdTe thin-film heterostructures on the output characteristics of ITO/CdS/CdTe/Cu/Au solar cells and the crystal structure of their base CdTe layer are carried out. Structural mechanisms determining variation in the efficiency of photoelectric processes in ITO/CdS/CdTe/Cu/Au thin-film solar cells produced by varying the thickness of the CdCl₂ layer during the chloride treatment are suggested. It is shown for the first time by X-ray diffractometry that the metastable hexagonal CdTe phase transforms into a stable cubic modification during the chloride treatment. This circumstance provides a substantial improvement in the photoelectric properties of CdS/CdTe thin-film heterostructures.     

Photomemory in CdTe thin-film solar cells

It is shown that a change in the chemisorption equilibrium on the crystallite boundaries in thin-film photoconverters based on polycrystalline CdTe occurs when they are subjected to radiation. This leads to the appearance of photomemory as a result of a change in the surface potential and a corresponding change in the surface recombination rate. This effect may be the reason for the instability of the parameters of polycrystalline solar cells and can lead to a degradation and to an enhancement of the photoconversion efficiency. An experimental technique, which allows one to determine the dominant type of surface state at the boundaries of the crystallites, is considered. Fiz. Tekh. Poluprovodn. 33, 481–483 (April 1999)     

Voltage dependent photocurrent collection in CdTe/CdS solar cells

The voltage dependence of the photocurrent J_L(V) of CdTe/CdS solar cells has been characterized by separating the forward current from the photocurrent at several illumination intensities. J_L(V) reduces the fill factor (FF) of typical cells by 10–15 points, the open circuit voltage (V_OC) by 20–50 mV, and the efficiency by 2–4 points. Eliminating the effect of J_L(V) establishes superposition between light and dark J(V) curves for some cells. Two models for voltage dependent collection give reasonable fits to the data: (1) a single carrier Hecht model developed for drift collection in p‐i‐n solar cells in which fitting yields a parameter consistent with lifetimes of 10⁻⁹ s as measured by others; or (2) the standard depletion region and bulk diffusion length model fits almost as well. The simple Hecht‐like drift collection model for photocurrent gives very good agreement to J(V) curves measured under AM1·5 light on CdTe/CdS solar cells with FF from 53% to 70%, CdTe thickness from 1·8 to 7·0 µm, in initial and stressed states. Accelerated thermal and bias stressing increases J_L(V) losses as does insufficient Cu. This method provides a new metric for tracking device performance, characterizes transport in the high field depletion region, and quantifies a significant FF loss in CdTe solar cells. Copyright © 2007 John Wiley & Sons, Ltd.     

Increases in energy conversion efficiency for thin-film polycrystalline CdS/Cu2S photovoltaic cells

Thin-film polycrystalline CdS/Cu2S photovoltaic solar cells with terrestrial energy conversion efficiencies in sunlight up to 7.8 percent have been developed. The major improvements are due to the increased optical transmission and electrical contact properties of the current collection system.     

CdTe/CdS thin film solar cells grown in substrate configuration

The ability to grow efficient CdTe/CdS solar cells in substrate configuration would not only allow for the use of non‐transparent and flexible substrates but also enable a better control of junction formation. Yet, the problems of barrier formation at the back contact as well as the formation of a p–n junction with reduced recombination losses have to be solved. In this work, CdTe/CdS solar cells in substrate configuration were developed, and the results on different combinations of back contact materials are presented. The Cu content in the electrical back contact was found to be a crucial parameter for the optimal CdCl₂‐treatment procedure. For Cu‐free cells, two activation treatments were applied, whereas Cu‐containing cells were only treated once after the CdTe deposition. A recrystallization behavior of the CdTe layer upon its activation similar to superstrate configuration was found; however, no CdTe–CdS intermixing could be observed when the layers were treated consecutively. Remarkably high V_OC and fill factor of 768 mV and 68.6%, respectively, were achieved using a combination of MoO₃, Te, and Cu as back contact buffer layer resulting in 11.3% conversion efficiency. With a Cu‐free MoO₃/Te buffer material, a V_OC of 733 mV, a fill factor of 62.3%, and an efficiency of 10.0% were obtained. Copyright © 2012 John Wiley & Sons, Ltd.     

Deposition and doping of CdS/CdTe thin film solar cells

1% oxygen is incorporated into both CdS and CdTe layers through RF sputtering of CdS/CdTe thin film solar cells. The optical and electrical parameters of the oxygenated and O₂-free devices are compared after CdCl₂ treatment and annealing in ambient Ar and/or air. The effects of ambient annealing on the electrical and optical properties of the films are investigated using current-voltage characterization, field emission scanning electron microscopy, X-ray diffraction, and optical transmission spectroscopy. The 1% oxygen content can slightly increase the grain size while the crystallinity does not change. Annealing in ambient Ar can increase the transmission rate of the oxygenated devices.     

石墨烯/CdTe肖特基结柔性薄膜太阳能电池研究

利用Matlab仿真模拟了石墨烯/P-CdTe肖特基结太阳能电池的光电特性。结果表明,电池的短路电流密度Jsc为23.9×10–3A/cm2、开路电压Voc为0.64 V、填充因子FF为79.0,转换效率η高达12%。与传统的氧化铟锡(ITO)电极比较,石墨烯柔韧性好,同时具备高透光和高导电的特性,可替代ITO作为新型电极材料来制备柔性薄膜太阳能电池。     

The design and fabrication of thin-film CdS/Cu2S cells of 9.15-percent conversion efficiency

Thin-film polycrystalline CdS/Cu2S cells with energy conversion efficiencies in sunlight of up to 9.15 percent and areas of ∼1 cm²have been developed. The improvement over previously achieved efficiencies is due to the development of techniques to separately measure and minimize fill factor losses. Specific design and fabrication changes based on a detailed quantitative analysis of the cell operation, were introduced to correct series resistance, shunt conductance and field effect losses. Further increases in efficiency can be expected from the development of a planar junction thin-film CdS/Cu2S cell.     

Fabrication procedures and process sensitivities for CdS/CdTe solar cells

This paper details the laboratory processes used to fabricate CdS/CdTe solar cells at the National Renewable Energy Laboratory. The basic fabrication technique includes low‐pressure chemical vapor deposited SnO₂ , chemical‐bath deposited CdS, close‐spaced sublimated CdTe, solution‐CdCl₂ treatment, and an acid‐contact etch, followed by application of a doped‐graphite paste. This paper also describes the results of a reproducibility study in which cells were produced by multiple operators with an average AM1·5 efficiency of 12·6%. And finally, this paper discusses process sensitivities and alternative cell fabrication procedures and reports the fabrication of a cell with an AM1·5 efficiency of 15·4%. Copyright © 1999 John Wiley & Sons, Ltd.     

Efficient CdTe/CdS solar cells and modules by spray processing

Efforts have been directed toward production of efficient, large-area, low-cost photovoltaic modules based on the CdS/CdTe heterojunction, with the objective being to develop an improved materials technology and fabrication process for limited volume production of 1-ft² and 4-ft² CdS/CdTe photovoltaic modules. The present structure of the CdS/CdTe polycrystalline thin-film photovoltaic devices being produced is presented, along with its potential for efficiency improvement. Junction characterization studies are summarized. Module design is described, particularly with regard to encapsulation issue. Future developmental directions are discussed     

Open-circuit voltage,fill factor,and efficiency of a CdS/CdTe solar cell

The dependences of the open-circuit voltage, fill factor, and efficiency of the thin-film CdS/CdTe solar cell on the resistivity ρ and carrier lifetime τ in the absorbing CdTe layer were studied. In the common case in which the uncompensated acceptor concentration and the electron lifetime in the CdTe layer are within 10¹⁵–10¹⁶ cm⁻³ and 10⁻¹⁰–10⁻⁹ s, the calculation results correspond to the achieved efficiency of the best thin-film CdS/CdTe solar cells. It was shown that, by decreasing ρ and increasing τ in the absorbing CdTe layer, the open-circuit voltage, fill factor, and efficiency can be substantially increased, with their values approaching the theoretical limit for such devices.     

The effect of oxygen on interface microstructure evolution in CdS/CdTe solar cells

Microstructural changes at the CdS/CdTe solar cell interface where close‐spaced sublimation (CSS) is used as the growth technique to deposit the p‐type CdTe absorber layer are studied by systematic layer characterization at various stages during heterojunction growth. CdS layers grown by both chemical bath deposition (CBD) and CSS provide a basis for determining the effects of CdS crystallinity, grain size, and oxygen content on the subsequent CdTe layer. As‐grown CBD CdS films exhibit small grains and variations in optical properties attributed to film impurities. In contrast, CSS yields CdS films with good crystallinity, larger grains, and nearly ideal optical properties. The hexagonal nature of CSS‐grown CdS is seen to nucleate hexagonal CdTe during the initial stages of CdTe film growth. Cubic CdS deposited by CBD in contrast promotes cubic CdTe nucleation. Oxygen anneals in the latter case can aid hexagonal CdTe nucleation. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) of the CdS/CdTe interface show CdS‐dependent differences in interdiffusion at the interface. This interdiffusion appears to be determined by the oxygen level in the CdS. When low‐oxygen‐containing CSS CdS films are used, sulfur diffusion is substantial, leading to significant consumption of the CdS layer. When these same films are annealed in oxygen, the consumption is reduced. Te diffusion into the CdS layer is also observed to decrease with oxygen anneals. Optical modeling shows that Te alloying with the CdS layer can greatly reduce the short‐circuit current of CdS/CdTe devices. Copyright © 2002 John Wiley & Sons, Ltd.     

碲化镉(CdTe)薄膜太阳电池实验室设备

太阳电池的种类诸多,近年,随着新材料的不断开发和相关技术的发展,薄膜太阳电池走进了人们的视野,CdTe薄膜太阳电池实验室技术转换效率能够达到10%～14%左右,与常规非晶硅薄膜太阳电池相比转换率较高,与晶体硅太阳电池相比成本较低,因此二者成为了部分科研机构的研究重点.北仪创新公司研发制造的STD-500碲化镉(CdTe)薄膜太阳电池实验室设备即是采用近空间升华方法而设计的升华方式镀膜设备,在真空环境下,在透明导电玻璃基片上沉积碲化镉薄膜.     

The generation-recombination mechanism of charge transport in a thin-film CdS/CdTe heterojunction

An n-CdS/p-CdTe heterostructure is studied. The heterostructure is obtained using the sequential growth of CdS and CdTe layers by electrochemical deposition and closed-space sublimation, respectively. The measured current-voltage characteristics are interpreted in the context of the Sah-Noyce-Shokley generation-recombination model for the depletion layer of a diode structure. The theory quantitatively agrees with the experimental results.     

Contact wetting angle as a characterization technique for processing CdTe/CdS solar cells

The feasibility of measuring contact wetting angles to characterize processing induced changes to thin film semiconductors in CdTe/CdS solar cells is evaluated. The contact angles of water and formamide are used to determine the polar and dispersive surface energies of the thin films using two analysis methods. Changes in surface energies resulting from processing are correlated to changes in surface chemistry and structure detected by glancing incidence X‐ray diffraction (GIXRD), X‐ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Surface energies are evaluated for sputtered In₂O₃:SnO₂, chemical surface‐deposited CdS, and physical vapor‐deposited (PVD) CdTe thin films under as‐deposited and treated conditions. Treatments include thermal anneal in air, argon, and CdCl₂ ambient as well as surface etching. Indium tin oxide (ITO) and CdS films exhibit increased polar surface energy corresponding to enhanced crystallization of surfaces resulting from processing and increasing CdS growth temperature. Native oxidation of PVD CdTe (111)‐oriented film surfaces occurs rapidly and is readily detected by changes in contact angle. Surface energies of PVD (111)‐oriented CdTe stored under various humidities prior to processing are energetically similar due to native oxidation. The polar energy of CdTe surfaces is affected by the addition or removal of crystalline surface oxides during film processing. Copyright © 2006 John Wiley & Sons, Ltd.     

Optimization of vapor post‐deposition processing for evaporated CdS/CdTe solar cells

The effects of thermal annealing in conjunction with CdCl₂ vapor heat treatment on the properties of CdTe/CdS thin films and devices deposited by physical vapor deposition are reported. Results are compared for three treatment variations: high‐temperature anneal only, high‐temperature anneal followed by CdCl₂ vapor heat treatment and CdCl₂ vapor heat treatment only. X‐ray diffraction, transmission electron microscopy and scanning electron microscopy show improved crystallographic properties of the CdTe film and reduced CdS/CdTe interdiffusion when a high‐temperature anneal is used prior to CdCl₂ treatment. The CdTe/CdS solar cells fabricated using an anneal at 550°C in argon prior to the CdCl₂ vapor heat treatment exhibited improved electrical characteristics compared to cells fabricated with no anneal step, yielding an open‐circuit voltage exceeding 850 mV. Copyright © 1999 John Wiley & Sons, Ltd.     

Accelerated publication 16.4% total-area conversion efficiency thin-film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell

This communication reports an MgF₂/ZnO/CdS/Cu(In,Ga)Se₂/Mo/glass polycrystalline solar cell with a confirmed total-area conversion efficiency of 16.4%. the thin-film Cu(In,Ga)Se₂ absorber was fabricated by computer-controlled physical vapor deposition (PVD) from the elemental sources. the resulting absorber has a Gal/In compositional grading that we refer to as a notch. Capacitance-voltage (C-V) measurements also reveal a graded doping profile in the region near the electronic p-n junction. the enhanced device performance is characterized by an open-circuit voltage (V_oc) of 660 mV and a particularly high fill factor (FF) of 78.7%.     

Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2 solar cells

The photoelectric properties of thin-film ZnO/CdS/Cu(In,Ga)Se₂ solar cells were studied by polarization photoactive absorption spectroscopy. It was shown that the thin-film solar cells have a high efficiency relative to the intensity of unpolarized radiation in the photon energy range from 1.2 to 2.5 eV. The induced photopleochroism coefficient P _I increases with the angle of incidence of the incident radiation as P _I ∼θ ² and at 70° it reaches 17–20% with photon energy 1.3 eV. Oscillations of the photopleochroism were also observed. These results are discussed taking into account the antireflection effect. The results obtained by us make it possible to use such solar cells as wide-band photosensors for linearly polarized radiation and for monitoring the production of high-efficiency, thin-film solar cells based on ternary semiconductors. Fiz. Tekh. Poluprovodn. 31, 806–810 (July 1997)     

An investigation of photocurrent loss due to reflectance and absorption in CdTe/CdS heterojunction solar cells

An attempt is made to understand, quantify, and reduce the reflectance and photocurrent loss in CdTe solar cells. Model calculations are performed to determine the optimum thicknesses of CdS and SnO₂ films and anti-reflection (AR) coating on glass that can minimize the reflectance and enhance the performance of CdTe/CdS/SnO₂/glass solar cells. Photocurrent loss due to absorption in CdS films is also calculated as a function of CdS thickness. It was found that the current loss due to reflectance ando absorption is more sensitive to the CdS film when its thickness falls below 1500Å. Model calculations show that reducing the CdS thickness from 1500 to 600Å increases short-circuit current density ( J_sc) by 3 mA/cm² because of reduced reflectance as well as absorption. Further decrease in CdS thickness below 600Å increases reflectance but results in higher J_sc, because current gain due to reduced absorption in thin CdS offsets the current loss due to higher reflectance. Model calculations also indicate that J_sc is not sensitive to SnO₂ thickness above 4000Å. Finally, an optimum thickness for single layer MgF₂ AR coating on glass was calculated to be 1100Å, which should provide an additional increase of 0.7 mA/cm² in J_sc. Some of these results are also experimentally validated in this paper.     

High conversion efficiency p-n+InP homojunction solar cells

p-n⁺InP homojunction solar cells have been fabricated and investigated. The best experimental cell without an antireflection coating exhibits a conversion efficiency of 13.5 percent (active area) under AM1 illumination; the corresponding open-circuit voltage, short-circuit current density, and fill factor (F.F.) are 0.817 V, 21.0 mA/cm², and 0.787, respectively.