Neutralization rate for slow Ar ions in front of KCl(0 0 1)

Charge state distributions of reflected ions are measured when 5 keV Ar^q+(q = 0−2) ions are incident on a clean KCl(0 0 1) surface at grazing angle, θ_i. Although the charge state distribution does not depend on the incident charge state at larger θ_i, significant dependence of the charge state distribution on incident charge state is observed at smaller θ_i. The ionization of Ar⁰ is completely suppressed at θ_i < 20 mrad, while large neutralization probability is observed for Ar⁺ incidence. These features allow us to derive the position-dependent neutralization rate of Ar⁺ in front of KCl(0 0 1). The obtained neutralization rate decreases exponentially with distance from the surface as it is usually assumed.     

Resonant ion stimulated desorption of O from the TiO2(1 1 0) surface: Effects of oxygenation and ion bombardment

The O⁺ desorption from reduced, oxygenated, and ion-bombarded TiO₂(1 1 0) surfaces has been investigated during He⁺ irradiation. The O⁺ desorption is initiated by creation of an antibonding O 2s core hole state via quasi-resonant charge exchange with the He⁺ 1s state, followed by the intra-atomic Auger decay of the O 2s hole. Upon oxygenation of the reduced TiO₂(1 1 0) surface, the O⁺ yield increases by one order of magnitude. The O₂ molecule is dissociated at the vacancy site of bridging oxygen and the oxygen atoms either fill a vacancy site or chemisorb at a fivefold-coordinated Ti⁴⁺ site as an adatom. The latter is detected with much higher efficiency than the former. The O⁺ yield is increased during He⁺ bombardment of the reduced TiO₂(1 1 0) surface due to formation of lower coordinated oxygen atoms. The oxygen species thus formed by ion bombardment or oxygenation are unstable on the surface and tend to diffuse into bulk vacancy sites or higher coordination surface sites even at room temperature.     

Radiation damage effects in CMR manganite materials

Polycrystalline La_0.5Pb_0.5Mn_1−xCr_xO₃ (x = 0.075 and 0.15) samples have been irradiated with 50 MeV Li³⁺ ions with different fluences and the effects on the transport properties have been studied by means of the temperature and magnetic field dependent resistivity measurements. Due to Li³⁺ ion irradiation, the resistivity increases and the metal–insulator transition temperature (T_mi) decreases. At low temperatures (below T_mi), a dominant contribution of the electron–magnon scattering process is observed for all the irradiated and unirradiated samples. The low temperature resistivity behavior as well as the magnetoresistance is modified due to irradiation. The changes in the magnetotransport properties due to irradiation have been compared with the changes caused due to Mn site substitution.     

Neutralization of keV Ne and Ar ions during grazing scattering from an Al(1 1 1) surface

Charge fractions after scattering of Ne⁺ ions, Ne⁰ atoms and Ar⁺ ions with keV energies under a grazing angle of incidence from an atomically clean and flat Al(1 1 1) surface are studied. For incoming Ne⁺ ions we observe defined ion fractions in the scattered beams, whereas for incident Ne⁰ atoms ion fractions are more than one order of magnitude smaller. This experimental result provides clear evidence for a survival of Ne⁺ ions over the whole scattering event. From the dependence of ion fractions on the perpendicular energy component we derive neutralization rates as function of distance from the surface. These rates compare well with recent theoretical calculations for the system He⁺–Al(1 1 1). For incident Ar⁺ ions no survival of ions is found and upper limits for the survival probability and lower limits for the neutralization rate are determined.     

Light emission from oxygen covered Al and Cu surfaces

Ion beam induced light emission is used to investigate the sputtering yield, S_O, of oxygen atoms on the surfaces of a polycrystalline copper and an Al(1 1 1) target. Under Ar⁺ and Ne⁺ ion bombardment of Al(1 1 1) and polycrystalline copper targets, spectral lines of Cu I and Al I emitting from sputtered excited atoms are measured as a function of the oxygen partial pressure, wavelength and beam energy. The light emission for two Al I lines (3082 and 3962 Å) and Cu I lines (3247 and 3274 Å) are proportional to the oxygen partial pressure (1×10⁻⁴ Torr). Above 2×10⁻⁴ Torr, the light intensities start to decrease which is consistent with other measurements. From saturated-oxygen covered target surfaces, light intensities of Al I and Cu I lines are measured as a function of time and oxygen partial pressures. The sputtering yields could be determined from the curves of spectral lines directly. For 10 and 20 keV Ar⁺ ions bombarding the copper surface, the oxygen sputtering yields are 0.34 and 0.22 (atoms/ion), respectively. The same copper target was bombarded by Ne⁺ ions at 5 and 10 keV, the oxygen sputtering yields are 0.87 and 0.59, respectively. For 10, 15, and 20 keV Ar⁺ bombarding an Al(1 1 1) target, the obtained sputtering yields are 0.44, 0.31, and 0.2 (atoms/ion), respectively.     

Optical absorption of metallic Zn nanoparticles in Zn ion implanted sapphire

Zn⁺ ion implantation (48 keV) was performed at room temperature up to a fluence of 5 × 10¹⁷ cm⁻² in -Al₂O₃ single crystals. X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical absorption spectroscopy were utilized to characterize the optical properties, chemical charge states and the microstructure of embedded metallic Zn nanoparticles, respectively. XPS analysis indicated that implanted Zn ions are in the charge state of metallic Zn⁰. TEM analysis revealed the metallic Zn nanoparticles of 3–10 nm in the as-implanted sample at a fluence of 1 × 10¹⁷ cm⁻². A selected area electron diffraction (SAD) pattern indicates the random orientation of the Zn nanoparticles. A clear absorption peak appeared gradually in the optical absorption spectra of the as-implanted crystals, due to surface plasma resonance (SPR) of Zn nanoparticles. The wavelength of the absorption peak shifted from 260 nm to 285 nm with the increasing ion fluence, ascribed to the growth of Zn nanoparticles.     

Low-energy ion scattering and sputtering at grazing ion bombardment of clean and oxygen covered Ag(1 1 0) surface

The ion scattering and sputtering processes at low energy grazing N⁺ and Ne⁺ ion bombardment of clean and oxygen covered Ag(1 1 0) surface have been investigated by computer simulation in the binary collision approximation.

The spatial, angular and energy distributions of scattered, sputtered particles and desorbed molecules of oxygen as well as their yields versus the angle of incidence have been calculated. In these distributions the some characteristic peaks were observed and analysed. It was found that an adsorption layer plays a role of the additional surface barrier, i.e. it reflects leaving target atoms back to crystal. The azimuth angular dependencies of Ag sputtering yield and non-dissociative O₂ desorption yield at grazing incidence have been calculated. It was shown that these dependencies correlate the crystal orientation.     

Inelastic processes in Ne collisions with a Mg surface; charge fractions and surface roughness

Results of a study of inelastic scattering in Ne⁺ collisions with a polycrystalline Mg target, performed by measurements of charge fractions, are reported. In agreement with previous studies, ion production is found to be due to binary collisions with surface atoms and the charge fractions can be well described by a simple exponential dependence on the perpendicular velocity in the outgoing trajectory. This is also shown to be the case for Ar⁺ collisions. Charge fractions and angular distributions of scattered particles are strongly affected by surface roughness effects.     

Large conductivity enhancement in polycrystalline 12CaO · 7Al2O3 thin films induced by extrusion of clathrated O ions by hot Au implantation and ultraviolet light illumination

Large enhancement in electrical conductivity from <10⁻¹⁰ S cm⁻¹ to 4 × 10⁻² S cm⁻¹ was achieved in polycrystalline 12CaO · 7Al₂O₃ (p-C12A7) thin films by hot Au⁺ implantation at 600 °C and subsequent ultraviolet (UV) light illumination. Although the as-implanted films were transparent and insulating, the subsequent UV-light illumination induced persistent electronic conduction and coloration. A good correlation was found between the concentration of photo-induced F⁺-like centers (a cage trapping an electron) and calculated displacements per atom, indicating that the hot Au⁺ implantation extruded free O²⁻ ions from the cages in the p-C12A7 films by kick-out effects and left electrons in the cages. These results suggest that H⁻ ions are formed by the Au⁺ implantation through the decomposition of preexisting OH⁻ ions. Subsequent UV-light illumination produced F⁺-like centers via photoionization of the H⁻ ions, which leads to the electronic conduction and coloration.     

钾/钠离子对水热合成铯榴石结构的影响

水热合成铯榴石能低温、晶格固化放射性废物¹³⁷Cs,但在放射性废物中Cs⁺通常与同族的K⁺/Na⁺共存,两者可能会对水热合成铯榴石组成和结构产生影响。基于此,参考铯榴石化学计量组成CsAlSi₂O₆,首先利用偏高岭土、纳米二氧化硅和CsOH•H₂O为原料水热合成了铯榴石。然后分别以不同摩尔质量的KOH或NaOH取代CsOH•H₂O,研究了K⁺/Na⁺对水热合成产物组成和结构的影响。结果表明,铯榴石水热晶化温度相对较低,产物微观下呈多晶微球态;K⁺与Cs⁺共存时,体系水热产物主要为铯榴石微球,微球尺寸随K⁺掺入比例的提高而增加,但K⁺主要存在于晶化程度较低的钾铝硅酸盐水合物中,并未参与铯榴石形成;Na⁺与Cs⁺共存时,体系水热产物主要由铯榴石和方沸石(NaAlSi₂O₆•H₂O)组成,Cs⁺和Na⁺各自存在于铯榴石或方沸石结构中。铯榴石相对较低的水热晶化温度及其结构中Cs⁺不能迁移和进行离子交换的特性,使得水热条件下K⁺/Na⁺不能进入先形成的铯榴石结构中的碱金属离子位点。尽管如此,K⁺或Na⁺的存在可降低铯榴石的水热晶化温度、促进铯榴石晶粒生长,且当K⁺或Na⁺与Cs⁺共存时,Cs⁺仍优先进入并稳定固化于铯榴石晶体结构中。     

Effect of electric charge accumulation on low energy ion implantation in insulators

Charge accumulation at the surface of insulators during low energy ion implantation is related to two processes: ion impinging on the sample and secondary electron emission. Samples composed of a piece of Si (having the size of the ion beam) fixed on the centre of polyethylene (PE) coupons have been implanted with 2.2 keV H₂ ions to a fluence of 2 × 10¹⁶ H/cm². ERD (Elastic Recoil Detection) depth profiles of the implanted ions are shallower with an increase of the PE coupon size. The relative critical Si/PE size to repel all the incident ions is around 1.1 × 1.1 cm²/2.5 × 2.5 cm². The potential of the secondary electron suppressor has been varied from −500 V to +500 V. It changes the secondary electron distribution around the implanted area and, consequently, affects the accumulation of charges at the sample surface. When the potential is 0 V, a uniform ion implantation with little effect of charge accumulation for all sizes of PE coupons is obtained. A two-dimension model has been performed and gives a good explanation for the mechanism of the electric charge neutralisation.     

Interesting aspects of the analysis of resistivity in Li irradiated Bi-2212

Differently heat treated and 55 MeV Li³⁺ beam irradiated Bi₂Sr₂Ca₁Cu₂O_8+δ (Bi-2212) high temperature superconductors have been studied from the analysis of resistivity in the normal state as well as near the superconducting transition. For all the unirradiated and irradiated samples the so-called linear temperature dependence of the normal state resistivity, in a wide temperature range, can well be understood within the variable range hopping (VRH) conduction scenario. Near and above the bulk superconducting transition, the fluctuation enhanced conductivity (paraconductivity) analysis shows a noteworthy modification of the conduction process due to radiation induced defects.     

Photoluminescence of Au formed in 12CaO · 7Al2O3 single crystal by Au-implantation

Au⁺ ion implantation with fluences from 1 × 10¹⁴ to 3 × 10¹⁶ cm⁻² into 12CaO · 7Al₂O₃ (C12A7) single crystals was carried out at a sample temperature of 600 °C. The implanted sample with the fluence of 1 × 10¹⁵ cm⁻² exhibited photoluminescence (PL) bands peaking at 3.1 and 2.3 eV at 150 K when excited by He–Cd laser (325 nm). This was the first observation of PL from C12A7. These two PL bands are possibly due to intra-ionic transitions of an Au⁻ ion having the electronic configuration of 6s², judged from their similarities to those reported on Au⁻ ions in alkali halides. However, when the concentration of the implanted Au ions exceeded the theoretical maximum value of anions encaged in C12A7 (2.3 × 10²¹ cm⁻³), surface plasmon absorption appeared in the optical absorption spectrum, suggesting Au colloids were formed at such high fluences. These observations indicate that negative gold ions are formed in the cages of C12A7 by the Au⁺ implantation if an appropriate fluence is chosen.     

Material dependence of total electron emission yields following slow highly charged ion impact

The total electron emission yields following the interaction of “Slow (2 keV/a.u.) Highly Charged Ions” (SHCI) (O³⁺⁷⁺, Xe¹²⁺⁵²⁺, Au⁵⁴⁺⁶⁹⁺) with different target surfaces (highly-oriented pyrolytic graphite (HOPG), Au and SiO2) have been measured. The emission yields increase with charge state, and is found to be highest for carbon, the HOPG target, and lowest for the SiO₂ target. An empirical formula for the electron emission is including recent results from investigations of plasmon excitation following SHCI impact are used to interpret the results.     

层状金属硫化物硫化锡钾的制备及其对Sr2+的吸附性能研究

本文用水热法合成了硫化锡钾（KSnS）,利用扫描电镜（SEM）、X射线衍射（XRD）仪等对KSnS的形貌和组成进行了表征分析,并通过静态吸附实验分别研究了pH值、接触时间、共存离子和Sr²⁺初始浓度对KSnS吸附Sr²⁺的影响。结果表明,在40 ℃、pH=7.25、Sr²⁺初始浓度为5.5 mg/L的条件下,KSnS对Sr²⁺的吸附平衡时间约为35 min,Sr²⁺去除率为99.62%。吸附反应可操作pH值范围较宽,52+去除率保持在80%以上。溶液中含有K⁺、Na⁺、Ca²⁺和Mg²⁺等共存离子时,二价离子的干扰大于一价离子。KSnS对Sr²⁺的吸附动力学行为可用准二级动力学方程描述,吸附过程属于化学吸附。通过Weber-Morris模型和Boyd模型分析可知,液膜扩散是主导吸附速率的步骤。     

The Stuttgart positron beam, its performance and recent experiments

A monoenergetic MeV positron (e⁺) beam, with a flux at present of 6 × 10⁴ e⁺/s in the energy range of 0.5 to 6.5 MeV, has been installed at the Stuttgart Pelletron accelerator. The stabilization and the absolute calibration of the energy E is monitored by a Ge detector with real-time feedback; a relative energy stability of ΔE/E 10⁻⁴ is obtained. So far, e⁺e⁻ scattering and annihilation-in-flight experiments for investigating the low-energy e⁺e⁻ interaction as well as β⁺ γ positron lifetime measurements in condensed matter have been performed. The advantages of the β⁺ γ method compared to the conventional γγ coincidence technique have been demonstrated. Recently, triple-coincidence positron “age-momentum correlation” measurements have been carried out on fused quartz. A brief account is given on the development of a “positron clock” aiming at a substantial improvement of the time resolution of the β⁺ γ positron lifetime measurements.     

Surface morphology of the Ar ion-irradiated Ag/Si(1 1 1) system

In the present study, a 500 Å thin Ag film was deposited by thermal evaporation on 5% HF etched Si(1 1 1) substrate at a chamber pressure of 8×10⁻⁶ mbar. The films were irradiated with 100 keV Ar⁺ ions at room temperature (RT) and at elevated temperatures to a fluence of 1×10¹⁶ cm⁻² at a flux of 5.55×10¹² ions/cm²/s. Surface morphology of the Ar ion-irradiated Ag/Si(1 1 1) system was investigated using scanning electron microscopy (SEM). A percolation network pattern was observed when the film was irradiated at 200°C and 400°C. The fractal dimension of the percolated pattern was higher in the sample irradiated at 400°C compared to the one irradiated at 200°C. The percolation network is still observed in the film thermally annealed at 600°C with and without prior ion irradiation. The fractal dimension of the percolated pattern in the sample annealed at 600°C was lower than in the sample post-annealed (irradiated and then annealed) at 600°C. All these observations are explained in terms of self-diffusion of Ag atoms on the Si(1 1 1) substrate, inter-diffusion of Ag and Si and phase formations in Ag and Si due to Ar ion irradiation.     

Electronic excitation effects in CeO2 under irradiations with high-energy ions of typical fission products

In order to understand the formation mechanism of a crystallographic re-structuring in the periphery region of high-burnup nuclear fuel pellets, named as “rim structure”, information on the accumulation process of radiation damage and fission products (FPs), as well as high-density electronic excitation effects by FPs, are needed. In order to separate each of these processes and understand the high-density electronic excitation effects, 70–210 MeV FP ion (Xe^10–14+, I⁷⁺ and Zr⁹⁺) irradiation studies on CeO₂, as a simulation of fluorite ceramics of UO₂, have been done at a tandem accelerator of JAEA-Tokai and the microstructure changes were determined by transmission electron microscope (TEM). Measurements of the diameter of ion tracks, which are caused by high-density electronic excitation, have clarified that the effective area of electronic excitation by high-energy fission products is around 5–7 nm  and the square of the track diameter tends to follow linear function of the electronic stopping power (S_e). Prominent changes are hardly observed in the microstructure up to 400 °C. After overlapping of ion tracks, the elliptical deformation of diffraction spots is observed, but the diffraction spots are maintained at higher fluence. These results indicate that the structure of CeO₂ is still crystalline and not amorphous. Under ion tracks overlapping heavily (>1 × 10¹⁵ ions/cm²), surface roughness, with characteristic size of the roughness around 1 μm, is observed and similar surface roughness has also been observed in light-water reactor (LWR) fuels.     

The influence of calcium ions on the development of acidity in corrosion product deposits on SIMFUEL, UO2

In order to clarify the influence of groundwater constituents on the formation of corrosion products and secondary phase deposits on corroding/dissolving nuclear fuel surfaces under waste disposal conditions we have investigated the influence of Ca²⁺, present as CaCl₂. The influence of calcium ions on the anodic dissolution of SIMFUEL (doped uranium dioxide) has been characterized over the potential range 0–500 mV (vs. SCE). Through the use of X-ray photoelectron spectroscopy (XPS) the surface composition over this potential range has been determined. Ca²⁺ was found not to influence the conversion of U^IVO₂ to , but to suppress the subsequent formation of a U^VI surface species which lead to the formation of a hydrated deposit, UO₃ · yH₂O. The adsorption of Ca²⁺ on the UO₂ surface is believed to inhibit fuel dissolution either via inhibiting the stabilization of the cation precursor (UO₂(OH)₂)_ads or by blocking the O²⁻ anion transfer reaction from the fuel surface.     

硅基磷钼酸铵吸附剂的合成及其对Cs的吸附

采用孔内结晶法合成了磷钼酸铵二氧化硅吸附剂(AMP/SiO2),通过XRD、BET、EPMA等手段对其进行了表征。研究了接触时间、钠钾钙镁四种共存离子对AMP/SiO2吸附Cs的影响。结果表明,AMP/SiO2对Cs的吸附在10min即可达平衡,且受钾离子的影响较大而受其他三种共存离子的影响较小,吸附过程符合Langmuir吸附模型和假二级动力学方程,在0.6mol/L的钠溶液中对Cs的静态及动态交换容量分别可达0.390mmol/g和0.323mmol/g。