Phase transition and mechanical properties of ZrNxOy thin films on AISI 304 stainless steel

ZrN_xO_y thin films were deposited on AISI 304 stainless steel (304SS) substrates by reactive magnetron sputtering. The specimens were produced by sputtering a Zr target at 500 °C and the reactive gasses were N₂ and O₂ at various flow rates (ranging from 0 to 2 sccm). The purpose of this study was to investigate the effect of oxygen flow rate on the phase transition and accompanying mechanical properties of the ZrN_xO_y thin films. The oxygen contents of the thin films increased significantly with increasing oxygen flow rate. X-ray diffraction (XRD) revealed that the characteristics of the films can be divided into three zones according to the major phase with increasing oxygen content: Zone I (ZrN), Zone II (Zr₂ON₂) and Zone III (m-ZrO₂). The hardness of the ZrN_xO_y films decreased with increasing oxygen content due to the formation of the soft oxide phase. Modified XRD sin²ψ method was used to respectively measure the residual stresses of ZrN, Zr₂ON₂ and m-ZrO₂ phases. The results showed that the residual stress in ZrN was relieved as the oxygen content increased, and Zr₂ON₂ and m-ZrO₂ were the phases with lower residual stress. Compositional depth profiles indicated that there was a ZrO₂ interlayer near the film/substrates interface for all samples except the mononitride ZrN specimen. Contact angle was used as an index to assess the wettability of the film on substrate. The contact angles of ZrN, Zr₂ON₂ and m-ZrO₂ on stainless steel were indirectly measured using Owens-Wendt method. The results showed that ZrO₂ possessed the lowest wettability on 304SS among the three ZrN_xO_y phases, indicating that the ZrO₂ interlayer may account for the spallation of the ZrN_xO_y films after salt spray tests.     

Mechanical properties and corrosion resistance of nanocrystalline ZrNxOy coatings on AISI 304 stainless steel by ion plating

Transition metal oxynitrides have become emerging decorative coating materials due to their adjustable coloration and high hardness and corrosion resistance. This research studied the effect of oxygen content on the coloration, mechanical properties and corrosion resistance of ZrN_xO_y thin films deposited on AISI 304 stainless steel using hollow cathode discharge ion plating (HCD-IP). The Zr/N/O ratios of the ZrN_xO_y films were determined using X-ray photoelectron spectroscopy (XPS). The color of the ZrN_xO_y thin film changed from golden yellow to blue and then slate blue with increasing oxygen content. X-ray diffraction (XRD) patterns revealed that phase separation of ZrN and m-ZrO₂ occurred as the oxygen content reached 31.2 at.%. ZrN(O) (ZrN with dissolving oxygen) is dominant at oxygen content less than 18.1 at.%, while m-ZrO₂ phase was prevailed at oxygen content above 40.3 at.%. Phase separation lowered the hardness of the ZrN_xO_y films as the fraction of ZrO₂ was less than 40%. The residual stresses in ZrN phase was higher than that in ZrO₂, and the residual stress decreased for the specimen containing 30 to 37% ZrO₂. For the samples containing more than 44% ZrO₂, the average residual stress was close to that in ZrO₂ phase. The corrosion resistance was evaluated by salt spray test and potentiodynamic scan in two solutions: 0.5MH₂SO₄ + 0.05 M KSCN and 5% NaCl solutions. The results showed consistent trend in the two solutions. From the results of potentiodynamic scan, corrosion resistance increased as the packing density of the film increased, whereas the film thickness was not a crucial factor on corrosion current; moreover, the electrical conductivity of the film may be one of the significant factors in corrosion resistance. Results of salt spray tests suggested that the corrosion of ZrN_xO_y in NaCl may play an important role in corrosion resistance.     

Synthesis and characterization of nanocrystalline ZrNxOy thin films on Si by ion plating

Based on the optimum deposition conditions of ZrN thin film from our previous study, by varying oxygen flow rate ranging from 0 to 8 sccm, nanocrystalline ZrN_xO_y thin films were deposited on p-type (100) Si substrates using hollow cathode discharge ion-plating (HCD-IP) system. The objective of this study was to investigate the effect of oxygen content on the composition, structure and properties of the ZrN_xO_y thin films. The oxygen content of the thin film, determined using X-ray photoelectron spectroscopy (XPS), increased with increasing oxygen flow rate. As the oxygen content increased, the color of the ZrN_xO_y thin film changed from golden yellow to blue and then slate blue, and the microstructure observed by scanning electron microscopy (SEM) varied from columnar structure to finer grains and finally flat and featureless structure. Phase separation of ZrN_xO_y to ZrN and monoclinic ZrO₂ was found from X-ray diffraction (XRD) patterns when the oxygen content was higher than 9.7 at.%. The hardness of the film slightly increased as the oxygen content was less than 9.7% and then decreased to 15.7 GPa, a typical hardness of ZrO₂ phase, as the oxygen content further increased. The total residual stress of the film was measured using an optical method, and the residual stresses of ZrN and ZrO₂ phases were determined separately using modified XRD sin²ψ method. The total stress was close to the stress in ZrN phase as the ZrO₂ fraction was less than 30%, and was close to that in ZrO₂ phase as the ZrO₂ fraction was over 30%. The electrical resistivity of the film increased significantly with the increase of oxygen content. The film properties showed consistent trend with phase separation. As the fraction of ZrO₂ phase was small, the apparent properties of the films were more close to those in ZrN. When ZrO₂ fraction was over 30%, the films mainly exhibited the properties of ZrO₂.     

Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics

The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(Zr_xTi_1−x)O₃(MZ_xT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(Zr_xTi_1−x)O₃ ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr⁴⁺ substitution in the B-site could increase density and grain size. An excess of Zr⁴⁺ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZ_xT ceramics. The temperature coefficient of resonant frequency (τ_f) of Mg(Zr_xTi_1−x)O₃ ceramics slightly increased with increasing Zr content, and the variation in τ_f was attributed to the formation of secondary phases.     

Preparation, structure and electrical conductivity of the pyrochlore-type phase Sm2Zr2O7 codoped with bivalent magnesium and trivalent dysprosium cations

The pyrochlore-type phases with the compositions of SmDy_1−xMg_xZr₂O_7−x/2 (0 ≤ x ≤ 0.20) have been prepared by pressureless-sintering method for the first time as possible solid electrolytes. The structure and electrical conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics have been studied by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy measurements. SmDy_1−xMg_xZr₂O_7−x/2 (x = 0, 0.05, 0.10) ceramics exhibit a single phase of pyrochlore-type structure, and SmDy_1−xMg_xZr₂O_7−x/2 (x = 0.15, 0.20) ceramics consist of pyrochlore phase and a small amount of the second phase magnesia. The total conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics obeys the Arrhenius relation, and the total conductivity of each composition increases with increasing temperature from 673 to 1173 K. SmDy_1−xMg_xZr₂O_7−x/2 ceramics are oxide-ion conductors in the oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The highest total conductivity value is about 8 × 10⁻³ S cm⁻¹ at 1173 K for SmDy_1−xMg_xZr₂O_7−x/2 ceramics.     

High sintering resistance of a novel thermal barrier coating

Sintering resistance of a novel thermal barrier coating Nd_xZr_1 − xO_y with Z dissolved in, where 0 < x < 0.5, 1.75 < y < 2 and Z is an oxide of a metal selected from Y, Mg, Ca, Hf and mixtures thereof, was studied. The coatings of Nd_xZr_1 − xO_y and typical 7YSZ were deposited by electron beam physical vapor deposition (EB-PVD) and air plasma spray (APS). The samples with the coating system of EB-PVD Nd_xZr_1 − xO_y or 7YSZ overlaid onto a MCrAlY bond coat were cyclically sintered at 1107 °C for 706 hours. The freestanding coatings of EB-PVD Nd_xZr_1 − xO_y and 7YSZ were isothermally sintered at 1371 °C for 500 hours. The microstructure of EB-PVD Nd_xZr_1 − xO_y before and after the sintering was evaluated and compared with EB-PVD 7YSZ. The sintering resistance of freestanding APS Nd_xZr_1 − xO_y coating was also investigated after isothermal sintering at 1200 °C for 50 and 100 hours. The results demonstrated that the new coatings of Nd_xZr_1 − xO_y applied with both EB-PVD and APS have higher sintering resistance than EB-PVD and APS 7YSZ, respectively.     

Rhombohedral-monoclinic phase transition related to grain orientation in Zr-rich Pb(ZrxTi1−x)O3 thin films

Pb(Zr_xTi_1−x)O₃ thin films with mixed orientations of (1 1 1) and (1 0 0) were prepared on Pt/Ti/SiO₂/Si substrate by sol-gel technique. The compositions of PZT thin films are chosen as x = 0.55 and x = 0.58. Both of the compositions are in the rhombohedral phase region of the Pb(Zr_xTi_1−x)O₃ phase diagram, but the former is near the monoclinic phase existence region, and the latter is far from the monoclinic phase existence region. Rhombohedral-monoclinic phase transitions are reported in both of the thin films. The results show that the phase transition is related to the grain orientation. Phase transitions in the films are clearly identified: rhombohedral phase transforms to M_B phase in (1 1 1)-oriented grains, and rhombohedral phase transforms to M_A phase in (1 0 0)-oriented grains. The remnant polarization is determined by the content of (1 1 1)-oriented grains. It is shown that the remnant polarization is greater in the film with higher content of (1 1 1)-oriented grains.     

Influence of deposition conditions on mechanical and tribological properties of nanostructured TiN/CNx multilayer films

Nanostructured TiN/CN_x multilayer films were deposited onto Si (100) wafers and M42 high-speed-steel substrates using closed-filed unbalanced magnetron sputtering in which the deposition process was controlled by a closed loop optical emission monitor (OEM) to regulate the flow of N₂ gas. Multilayers with different carbon nitride (CN_x) layer thickness could be attained by varying the C target current (0.5 A to 2.0 A) during the deposition. It was found that the different bilayer thickness periods (i.e. the TiN layer thickness Λ_TiN was fixed at 3.0 nm while the CN_x layer thickness Λ_CNx was varied from 0.3 to 1.2 nm) significantly affected the mechanical and tribological properties of TiN/CN_x multilayer films. These multilayer films were characterized and analyzed by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM), Rockwell-C adhesion test, scratch test, pin-on-disc tribometer, and nanoindentation measurements. XPS analyses revealed that the chemical states, such as TiN, TiC, TiN_xO_y and TiO_2, existed in a TiN layer. Nanoindentation results showed that the hardness was highly dependent on the bilayer thickness. A maximum hardness of ~ 41.0 GPa was observed in a multilayer film at bilayer thickness Λ_TiN = 3.0 nm and Λ_CNx = 0.9 nm. All multilayer films exhibited extreme elasticity with elastic recoveries as high as 80% at 5 mN maximum load. The compressive stresses in the films (in a range of 1.5-3.0 GPa) were strongly related to their microstructure, which depended mainly on the incorporation of nitrogen in the films. By scratch and Rockwell-C adhesion tests, the multilayer films with smaller bilayer thicknesses (Λ_TiN = 3.0 nm, Λ_CNx = 0.3 and 0.6 nm) exhibited the best adhesion and cohesive strength. The critical load value obtained was as high as ~ 78 N for the films with Λ_TiN = 3.0 nm, Λ_CNx = 0.9 nm. The friction coefficient value for a multilayer at Λ_TiN = 3.0 nm and Λ_CNx = 0.9 nm was found to be low 0.11. These adhesive properties and wear performance are also discussed on the basis of microstructure, mechanical properties and tribochemical wear mechanisms.     

Electrical properties of binder-free thick film BaYxBi1−xO3 NTC thermistors

The microstructure and electrical properties of BaY_xBi_1−xO₃ thick film negative temperature coefficient thermistors, fabricated by screen printing, were investigated. The sintered thick films were the single-phase solid solutions of the BaY_xBi_1−xO₃ compounds with a monoclinic structure. The added Y₂O₃ led to a significant decrease in the grain size of the thermistors. The resistivity and coefficient of temperature sensitivity for the BaY_xBi_1−xO₃ (0 ≤ x ≤ 0.15) thick film NTC thermistors decreased first with increasing x in the range of x < 0.04 and then increased with further increase in x.     

Growth and characterization of chemical bath deposited Cd1−xZnxS thin films

Cd_1−xZn_xS (0 ≤ x ≤ 1) thin films have been deposited by chemical bath deposition method on glass substrates from aqueous solution containing cadmium acetate, zinc acetate and thiourea at 80 ± 5 °C and after annealed at 350 °C. The structural, morphological, compositional and optical properties of the deposited Cd_1−xZn_xS thin films have been studied by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), photoluminescence (PL) and UV-vis spectrophotometer, respectively. X-ray diffraction analysis shows that for x < 0.8, the crystal structure of Cd_1−xZn_xS thin films was hexagonal structure. For x > 0.6, however, the Cd_1−xZn_xS films were grown with cubic structure. Annealing the samples at 350 °C in air for 45 min resulted in increase in intensity as well as a shift towards lower scattering angles. The parameters such as crystallite size, strain, dislocation density and texture coefficient are calculated from X-ray diffraction studies. SEM studies reveal the formation of Cd_1−xZn_xS films with uniformly distributed grains over the entire surface of the substrate. The EDX analysis shows the content of atomic percentage. Optical method was used to determine the band gap of the films. The photoluminescence spectra of films have been studied and the results are discussed.     

Dependence of lattice distortion of monoclinic phase on film thickness in Pb(Zr0.58Ti0.42)O3 thin films

In this paper, the chosen composition of PZT film falls in rhombohedral phase region and the dependence of lattice distortion on film thickness in sol-gel derived Pb(Zr_0.58Ti_0.42)O₃ thin films was systematically investigated. The results confirm that the Pb(Zr_0.58Ti_0.42)O₃ films have monoclinic phase even though the composition falls in the rhombohedral phase region. The mixed textures of (1 0 0) and (1 1 1) occur in the PZT films. In the case of mixed textures, a method using ψ-scan XRD to characterize the phase type of Pb(Zr_0.58Ti_0.42)O₃ film is presented. It is found that the phase type of (1 0 0)-oriented grains is M_A phase, and that of (1 1 1)-oriented grains is M_B phase. Moreover, the lattice constants of both M_A and M_B phases are sensitive to the film thickness. The lattice distortion of monoclinic phase becomes smaller as film thickness increases.     

Transparent p-type CuxS thin films

The effect of different mild post-annealing treatments in air, at 270 °C, for 4-6 min, on the optical, electrical, structural and chemical properties of copper sulphide (Cu_xS) thin films deposited at room temperature are investigated. Cu_xS films, 70 nm thick, are deposited on glass substrates by vacuum thermal evaporation from a Cu₂S:S (50:50 wt.%) sulphur rich powder mixture. The as-deposited highly conductive crystalline CuS (covellite) films show high carrier concentration (∼10²² cm⁻³), low electrical resistivity (∼10⁻⁴ Ω cm) and inconclusive p-type conduction. After the mild post-annealing, these films display increasing values of resistivity (∼10⁻³ to ∼10⁻² Ω cm) with annealing time and exhibit conclusive p-type conduction. An increase of copper content in Cu_xS phases towards the semiconductive Cu₂S (chalcocite) compound with annealing time is reported, due to re-evaporation of sulphur from the films. However, the latter stoichiometry was not obtained, which indicates the presence of vacancies in the Cu lattice. In the most resistive films a Cu₂O phase is also observed, diminishing the amount of available copper to combine with sulphur, and therefore the highest values of optical transmittance are reached (65%). The appearance on the surface of amorphous sulphates with annealing time increase is also detected as a consequence of sulphur oxidation and replacement of sulphur with oxygen. All annealed films are copper deficient in regards to the stoichiometric Cu₂S and exhibit stable p-type conductivity.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

Influence of partial substitution of Ge on crystallization kinetics, microstructure and magnetic property of Fe44Co44−xZr7B5Gex alloys

Partial substitution of Ge for Co in Fe₄₄Co₄₄Zr₇B₅ amorphous alloy is found to have a large influence on crystallization kinetics and magnetic property of the alloy. Activation energy of nanocrystallization of FeCo phase (primary crystallization) decreases by 90 kJ/mol with 4 at.% Ge substitution, while that of precipitations of Zr-type phase from a residual amorphous phase (secondary crystallization) increases by 106 kJ/mol. The suppression of the secondary crystallizations stabilizes the FeCo nanocrystals embedded in the residual amorphous phase for the Fe₄₄Co_44−xZr₇B₅Ge_x until higher temperatures. It is proposed that the stabilization mechanism is attributed to preferential partitioning of Ge in the residual amorphous phase revealed by scanning transmission electron microscopy analysis. Microstructure and coercivity for the annealed alloys are also presented in combination with the effect of the Ge substitutions.     

Studies on the power factor of (Ba,Sr)Co2+xRu4−xO11 compounds

We have prepared polycrystalline single-phase ACo_2+xRu_4−xO₁₁ (A = Sr, Ba; 0 ≤ x ≤ 0.5) using the ceramic method and we have studied their structure, electrical resistivity and Seebeck coefficient, in order to estimate their power factor (P.F.). These layered compounds show values of electrical resistivity of the order of 10⁻⁵ Ωm and their Seebeck coefficients are positive and range from 1 μV K⁻¹ (T = 100 K) to 20 μV K⁻¹ (T = 450 K). The maximum power factor at room temperature is displayed by BaCo₂Ru₄O₁₁ (P.F.: 0.20 μW K⁻² cm⁻¹), value that is comparable to that shown by compounds such as SrRuO₃ and Sr₆Co₅O₁₅.     

The studies of phase relation, microstructure, magnetic transition, magnetocaloric effect in (Gd1−xErx)5Si1.7Ge2.3 compounds

The phase relation, microstructure, Curie temperatures (T_C), magnetic transition, and magnetocaloric effect of (Gd_1−xEr_x)₅Si_1.7Ge_2.3 (x = 0, 0.05, 0.1, 0.15, and 0.2) compounds prepared by arc-melting and then annealing at 1523 K (3 h) using purity Gd (99.9 wt.%) are investigated. The results of XRD patterns and SEM show that the main phases in those samples are mono-clinic Gd₅Si₂Ge₂ type structure. With increase of Er content from x = 0 to 0.2, the values of magnetic transition temperatures (T_C) decrease linearly from 228.7 K to 135.3 K. But the (Gd_1−xEr_x)₅Si_1.7Ge_2.3 compounds display large magnetic entropy near their transition temperatures in a magnetic field of 0-2 T. The maximum magnetic entropy change in (Gd_1−xEr_x)₅Si_1.7Ge_2.3 compounds are 24.56, 14.56, 16.84, 14.20, and 13.22 J/kg K⁻¹ with x = 0, 0.05, 0.1, 0.15, and 0.2, respectively.     

CuIn1−xAlxS2 thin films prepared by sulfurization of metallic precursors

CuIn_1−xAl_xS₂ thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu-In-Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 Å, c = 11.02 Å} for CuInS₂ to {a = 5.30 Å, c = 10.36 Å} for CuAlS₂. No unwanted phases such as Cu_2−xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A₁ phonon frequency varied nonlinearly from 294 cm⁻¹ (CuInS₂) to 314 cm⁻¹ (CuAlS₂).     

Fabrication and properties of p-type K doped Zn1−xMgxO thin film

A series of K doped Zn_1−xMg_xO thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn_1−xMg_xO films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn_0.95Mg_0.05O thin film exhibits good electrical properties, with resistivity of 15.21 Ω cm and hole concentration of 5.54 × 10¹⁸ cm⁻³. Furthermore, a simple ZnO-based p-n heterojunction was prepared by deposition of a K-doped p-type Zn_0.95Mg_0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p-n diode heterostructure exhibits typical rectification behavior of p-n junctions.     

Effect of V doping on phase composition and electrical properties of K0.4Na0.6Nb1−xVxO3 thin films

Lead-free K_0.4Na_0.6Nb_1−xV_xO₃ thin films were prepared by chemical solution deposition method. The effects of V doping on the phase composition and electrical properties of the films were studied at room temperature. The results indicate that the films are composed of orthorhombic and tetragonal phases, and the phase composition is affected by V content. It is also found that the ferroelectric and dielectric properties are improved by V doping (2P_rmax = 35.5 μC/cm, ?_max = 1189). The enhanced electrical properties are attributed to the more T-phase content and better quality of K_0.4Na_0.6Nb_1−xV_xO₃ (x = 0.015) film.     

Power factor enhancement in Zn-doped Na0.8CoO2

The thermoelectric properties of Na_0.8Zn_xCo_1−xO₂/(ZnO)_y (x ≤ 0.01, 0 ≤ y ≤ 0.14) have been systematically investigated. The results suggest that doping divalent Zn ions within solubility limit x^* ∼ 0.01 leads to simultaneous reduction in resistivity and enhancement of thermopower. Analysis of the results show that the reduction of resistivity may be attributed to improved mobility of carriers, while the enhancement of thermopower may originate from the geometric relaxation of distorted CoO₆ octahedra caused by partial Zn substitution, leading to a narrower band width in the strongly correlated environment, consequently resulting in a remarkable 20% improvement in power factor.